Features. ficiency (%) Eff. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
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1 PTFB99EA/FA Thermally-Enhanced High Power RF LDMOS FETs 9 W, 8 V, 9 96 MHz Description The PTFB99EA and PTFB99FA are 9-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 9 to 96 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages. Manufactured with Wolfspeed's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB99EA Package H-665- PTFB99FA Package H-765- Gain (db) 9 8 Two-carrier WCDMA Drive-up V DD = 8 V, I DQ = 65 ma, ƒ = 96 MHz, GPP WCDMA signal, PAR = 8 db, MHz carrier spacing, BW =.84 MHz Gain 7 b99 gr ficiency (%) Eff Features Input and output internal matching Typical CW performance, 96 MHz, 8 V - Output power at P db = 9 W - = 65% Typical two-carrier WCDMA performance, 96 MHz, 8 V - Average output power = W - Linear Gain =.8 db - = 5% - Intermodulation distortion = 5 dbc Integrated ESD protection Low thermal resistance Pb-free and RoHS-compliant Capable of handling : 8 V, 9 W (CW) output power RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture) V DD = 8 V, I DQ = 65 ma, P OUT = 5 W average, ƒ = 96 MHz GPP signal, PAR = CCDF probability, channel bandwidth =.84 MHz Characteristic Symbol Min Typ Max Unit Gain G ps db Drain h D 6 4 % Adjacent Channel Power Ratio ACPR 5.5 dbc All published data at T CASE = 5 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! 46 Silicon Drive Durham, NC 77
2 PTFB99EA/FA RF Characteristics (cont.) Two-tone Specifications (not subject to production test verified by design/characterization in Wolfspeed test fixture) V DD = 8 V, I DQ = 65 ma, P OUT = 7 W PEP, ƒ = 96 MHz, tone spacing = MHz Characteristic Symbol Min Typ Max Unit Gain G ps 9.5 db Drain h D 48 % Intermodulation Distortion IMD dbc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V GS = V, I DS = ma V (BR)DSS 65 V Drain Leakage Current V DS = 8 V, V GS = V I DSS. µa V DS = 6 V, V GS = V I DSS. µa On-state Resistance V GS = V, V DS =. V R DS(on). W Operating Gate Voltage V DS = 8 V, I DQ = 65 ma V GS.8 V Gate Leakage Current V GS = V, V DS = V I GSS. µa Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage V DSS 65 V Gate-source Voltage V GS 6 to + V Junction Temperature T J C Storage Temperature Range T STG 4 to +5 C Thermal Resistance (T CASE = 7 C, 85 W CW) RqJC.7 C/W Ordering Information Type and Version Order Code Package Package Description Shipping PTFB99EA V R PTFB99EA-V-R H-665- Ceramic open-cavity, bolt-down Tape & Reel, 5 pcs PTFB99EA V R5 PTFB99EA-V-R5 H-665- Ceramic open-cavity, bolt-down Tape & Reel, 5 pcs PTFB99FA V R PTFB99FA-V-R H-765- Ceramic open-cavity, earless Tape & Reel, 5 pcs PTFB99FA V R5 PTFB99FA-V-R5 H-765- Ceramic open-cavity, earless Tape & Reel, 5 pcs 46 Silicon Drive Durham, NC 77
3 PTFB99EA/FA Typical Performance (data taken in a production test fixture) IMD (db Bc), ACPR (dbc) Two-carrier WCDMA Drive-up V DD = 8 V, I DQ = 65 ma, ƒ = 96 MHz, GPP WCDMA signal, PAR = 8 db, MHz carrier spacing, BW =.84 MHz IMD Low IMD Up ACPR b99 gr 49 ficiency (%) Eff Imd (dbc) Two-carrier WCDMA Drive-up V DD = 8 V, I DQ = 65 ma, GPP WCDMA signal, PAR = 8 db, MHz carrier spacing,.84 MHz BW IM Low IM Up 96 MHz 94 MHz 9 MHz b99 gr Single-carrier WCDMA Drive-up V DD = 8 V, I DQ = 65 ma, ƒ = 96 MHz, GPP WCDMA signal, TM w/64 DPCH, 4% clipping, PAR = 7.5 db,.84 MHz BW Single-carrier WCDMA Drive-up V DD = 8 V, I DQ = 65 ma, ƒ = 96 MHz, GPP WCDMA signal, TM w/64 DPCH, % clipping, PAR = db,.84 MHz BW Intermodula aion Distortion (dbc) ACPR Low - ACPR Up b99 gr Drain (%) Adjacent Chan nnel Power Ratio (db) ACPU ACPL -6 b99 gr (%) Drain 46 Silicon Drive Durham, NC 77
4 PTFB99EA/FA 4 Typical Performance (cont.) Single-carrier WCDMA Broadband V DD = 8 V, I DQ = 6 ma, POUT = 8 W, GPP WCDMA signal CW Power Sweep V DD = V, I DQ = 65 ma, ƒ = 96 MHz Gain (db B), (%). 6 IRL IML - -4 Gain -5 b99 gr Return Los s (db) / ACP (dbc) Ga ain (db) 7 6 Gain i b99 gr iency (%) Effici Frequency (MHz) Two-tone Drive-up V DD = 8 V, I DQ = 65 ma, ƒ = 96 MHz, ƒ = 959 MHz Two-tone Drive-up V DD = V, I DQ = 65 ma, ƒ = 96 MHz, ƒ = 959 MHz IM MD (dbc) rd Order IMD 4 Effi iciency (%) Gain (db) Gain 4 Effic ciency (%) -55 b99 gr Output Power, PEP (dbm) 6 b99 gr Output Power, PEP (dbm) 46 Silicon Drive Durham, NC 77
5 PTFB99EA/FA 5 Typical Performance (cont.) Two-tone Drive-up at selected frequencies V DD = 8 V, I DQ = 65 ma, MHz tone spacing Two-tone Intermodulation Distortion vs. Output Power V DD = 8 V, I DQ = 65 ma, ƒ = 96 MHz, ƒ = 959 MHz - - rd Order rd Order (dbc) IMD r MHz 94 MHz 9 MHz IMD (dbc) th 7th -6 b99 gr Output Power, PEP (dbm) -7 b99 gr Output Power, PEP (dbm) CW Drive-up (over temperature) V DD = 8 V, I DQ = 65 ma, ƒ = 96 MHz CW Drive-up V DD = 8 V, ƒ = 96 MHz 7 Gain (db) Gain b99 gr 8 +5ºC +85 C 7 ºC fficiency (%) Ef Pow wer Gain (db) I DQ = 98 ma I DQ = 65 ma 9 I DQ = ma 8 b99 gr Silicon Drive Durham, NC 77
6 PTFB99EA/FA 6 Broadband Circuit Impedance Frequency Z Source Ω Z Load Ω MHz R jx R jx Z Source D Z Load G S See next page for reference circuit information 46 Silicon Drive Durham, NC 77
7 b99 ef a - v_ B D- i n_ b99 ef a -v_ B D-out _ -7 - PTFB99EA/FA 7 Reference Circuit R85 Ohm R84 Ohm S R8 Ohm C85 pf R8 Ohm R8 Ohm 8 NC NC C8 pf C8 pf In S S B Out C 4 S E C84 pf C8 pf TL TL TL6 C pf TL9 C5 pf TL8 C4 47 pf TL7 R 5 TL6 C 4.7 pf R Ohm TL4 C pf TL5 TL8 ε r =.48 RF_IN PORT H = mil RO/RO45B TL5 TL TL9 TL4 R Ohm C9 TL5 TL6 8. pf TL8 TL7 TL C8.5 pf TL TL4 TL TL TL TL TL7 C6 4.8 pf TL C7 4.8 pf 4 TL GATE PORT DUT Reference circuit input schematic for ƒ = 96 MHz C7 pf TL TL8 TL6 C6 pf TL4 TL C4 pf TL4 TL TL8 TL9 C6 pf TL TL5 TL7 C pf TL5 DCVS TL4 C5 pf PORT DRAIN DUT TL TL9 TL8 TL45 C.5 pf TL46 TL TL C4 TL6 pf TL5 TL7 TL8 RF_OUT 4 4 TL7 TL5 C9 pf C.5 pf C.9 pf TL TL9 TL TL TL TL4 PORT TL7 C8 pf C pf C5 pf C pf ε r =.48 H = mil RO/RO45B TL TL4 TL TL4 TL TL44 TL4 TL4 TL9 TL C pf TL6 TL6 DCVS Reference circuit output schematic for ƒ = 96 MHz 46 Silicon Drive Durham, NC 77
8 PTFB99EA/FA 8 Reference Circuit (cont.) Reference Circuit Assembly DUT PTFB99EA or PTFB99FA Reference Circuit Part No. LTN/PTFB99EA (PTFB99EA) LTN/PTFB99FA (PTFB99FA) PCB Rogers RO45,.58 mm [. ] thick, oz. copper, ε r =.48 Find Gerber files for this test fixture on the Wolfspeed Web site at Electrical Characteristics at 96 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL.64 l, 69.6 W W =.65, L =. W = 5, L = 48 TL.8 l, 5.5 W W =., L =.8 W = 4, L = 9 TL4.658 l, 69.6 W W =.65, L =.9 W = 5, L = 56 TL5.5 l, 69.6 W W =.65, L =.94 W = 5, L = 55 TL6.4 l, 6.8 W W =.79, L =.5 W =, L = TL7.95 l, 7.47 W W =.7, L =.7 W = 487, L = TL8.4 l, 6.8 W W =.79, L =.5 W =, L = TL9.69 l, 5.5 W W =., L = 6.97 W = 4, L = 75 TL4, TL5, TL6,.4 l, 6.8 W W =.79, W =.79, W =.54 W =, W =, W = TL7, TL8, TL9 TL.7 l, 7.47 W W =.7, W =.7, W =.65 W = 487, W = 487, W = 5 TL.94 l, 7.47 W W =.7, L = 5.8 W = 487, L = TL.94 l, 5.5 W W =., W =., W =.78 W = 4, W = 4, W = 7 TL4.8 l, 5.5 W W =., L =.45 W = 4, L = 6 TL6, TL8.55 l, 4.8 W W =., L =. W = 8, L = 4 46 Silicon Drive Durham, NC 77
9 PTFB99EA/FA 9 Reference Circuit (cont.) Electrical Characteristics at 96 MHz (cont.) Transmission Electrical Dimensions: mm Dimensions: mils Line Output Characteristics TL.55 l, 9.74 W W = 9.5, L = 9.65 W = 64, L = 8 TL. l,.8 W W = 8, W = 8, W =.78 W = 5, W = 5, W = 7 TL.8 l,.8 W W = 8, L = 4. W = 5, L = 559 TL4, TL4.8 l, 47. W W =.7, W =.7, W =.5 W = 5, W = 5, W = 6 TL5, TL4. l, 47. W W =.7, W =.7, W =. W = 5, W = 5, W = 8 TL6, TL, TL7,.9 l, 9.74 W W = 9.5, W = 9.5, W =.5 W = 64, W = 64, W = 6 TL9 TL7.7 l, 47. W W =.7, L =.4 W = 5, L = 55 TL9. l, 9.74 W W = 9.5, L = 5. W = 64, L = 5 TL.75 l, 47. W W =.7, L = 4.5 W = 5, L = 55 TL, TL. l, 47. W W =.7, L =.8 W = 5, L = 5 TL.6 l, 47. W W =.7, L =. W = 5, L = 44 TL5.55 l, 9.74 W W = 9.5, L = 9.65 W = 64, L = 8 TL6.7 l, 47. W W =.7, L =.4 W = 5, L = 55 TL8.7 l, 47. W W =.7, W =.7, W =.7 W = 5, W = 5, W = 5 TL.6 l, 8.69 W W =.7, L =.4 W = 67, L = 45 TL, TL.6 l, 8.69 W W =.7, L =. W = 67, L = 445 TL4. l, 5.46 W W =., L = 5.69 W = 4, L = 4 TL5. l, 8.69 W W =.7, L =. W = 67, L = 87 TL6.7 l,.8 W W = 8, L =.7 W = 5, L = 5 TL.6 l, 47. W W =.7, L =. W = 5, L = 44 TL.75 l, 47. W W =.7, L = 4.5 W = 5, L = 55 TL4. l, 9.74 W W = 9.5, L = 5. W = 64, L = 5 TL5, TL6.4 l, 9.74 W W = 9.5, W = 9.5, W =.6 W = 64, W = 64, W = 9 TL7, TL9.8 l, 47. W W =.7, L = 5.5 W = 5, L = 64 TL4, TL4.9 l, 47. W W =.7, W =.7, W =.78 W = 5, W = 5, W = 7 TL4.7 l, 47. W W =.7, W =.7, W =.7 W = 5, W = 5, W = 5 TL45.7 l,.8 W W = 8, L =.9 W = 5, L = 5 46 Silicon Drive Durham, NC 77
10 b 99 efa - v _C D _- 7 - PTFB99EA/FA Reference Circuit (cont.) VDD S C8 C8 R8 C85 R8 C7 µf C8 C R84 C C4 C R R85 C5 R S S C84 R8 C6 R C5 C C6 C4 + µf C6 + C VDD RF_IN C9 C8 C7 PTFB99EA C C C4 C5 RF_OUT C9 C C8 µf + C VDD + PTFB99_IN_ R45,. (6) PTFB99_OUT_ R45,. (6) C µf Reference circuit assembly diagram (not to scale) Component ID Description Manufacturer P/N Input C Chip capacitor, pf ATC BFW5XB C Chip capacitor, pf ATC BMW C Chip capacitor, 4.7 pf ATC B4R7BW5XB C4 Chip capacitor, 4.7 µf Nichicon F9C475MAA C5 Chip capacitor, pf ATC BMW C6, C7 Chip capacitor, 4.8 pf ATC B4R8BW5XB C8 Chip capacitor,.5 pf ATC BR5BW5XB C9 Chip capacitor, 8. pf ATC B8RBW5XB C8, C84 Chip capacitor,. µf Panasonic Electronic Components ECJ-VBH4K C8, C8, C85 Chip capacitor,, pf Panasonic Electronic Components ECJ-VBHK R8 Resistor,.k W Panasonic Electronic Components ERJ-8GEYJV R8 Resistor,.k W Panasonic Electronic Components ERJ-8GEYJV R8 Resistor,.k W Panasonic Electronic Components ERJ-8GEYJV R84, R85 Resistor, W Panasonic Electronic Components ERJ-8GEYJV table cont. next page 46 Silicon Drive Durham, NC 77
11 PTFB99EA/FA Reference Circuit (cont.) Component ID Description Manufacturer P/N Input (cont.) S Transistor Fairchild Semiconductor BCP56 S Potentiometer, k W Bourns Inc. 4W--E S Voltage Regulator National Semiconductor LM785 Output C Chip capacitor, pf ATC BR9BW5XB C, C7, C5, Chip capacitor,. µf ATC 8M56K C6 C, C Chip capacitor,. µf Panasonic Electronic Components ECJ-VBH4K C4, C Chip capacitor, µf AVX Corporation 5PC5KATA C5, C9 Capacitor, µf Taiyo Yuden UMK5C76MM-T C6, C8 Chip capacitor, pf ATC BJW5XB C, C Chip capacitor, pf ATC BR5BW5XB C4 Chip capacitor, pf ATC BFW5XB See next page for package outline 46 Silicon Drive Durham, NC 77
12 h _ p o _ PTFB99EA/FA Package Outline Specifications Package H X. [.8] X 7. [.8] 6. ALL FOUR CORNERS D.66±.5 [.5±.] S FLANGE 9.78 [.85].5 [.] C L LID.6±.5 [.4±.] 5.49±.5 [.6±.] X R.5 [R.6] 4X R.6 [R.5] MAX C L G 5. [.6] 4X R.5 [R.6] SPH.57 [.6].6±.5 [.4±.].6±.8 [.4±.5]. [.4]. [.8] 6. Diagram Notes unless otherwise specified:. Interpret dimensions and tolerances per ASME Y4.5M Primary dimensions are mm. Alternate dimensions are inches.. All tolerances ±.7 [.5] unless specified otherwise. 4. Pins: D drain, S source, G gate. 5. Lead thickness:. +.5/.5 [.4 +./.]. 6. Exposed metal plane on top and bottom of ceramic insulator. 7. Gold plating thickness:.4 ±.8 micron [45 ± 5 microinch]. 46 Silicon Drive Durham, NC 77
13 H-765- po_-5- PTFB99EA/FA Package Outline Specifications (cont.) Package H X. [.8] X 7. [.8] 6. ALL FOUR CORNERS D.66±.5 [.5±.] FLANGE.6 [.4] LC LID.6±.5 [.4±.] 5.49±.5 [.6±.] G 4X R.6 [R.5] MAX LC SPH.57 [.6].6±.5 [.4±.].6±.8 [.4±.5]. [.4].6 [.4] S Diagram Notes unless otherwise specified:. Interpret dimensions and tolerances per ASME Y4.5M Primary dimensions are mm. Alternate dimensions are inches.. All tolerances ±.7 [.5] unless specified otherwise. 4. Pins: D drain, G gate, S source. 5. Lead thickness:. +.5/.5 [.4 +./.]. 6. Exposed metal plane on top of ceramic insulator. 7. Gold plating thickness:.4 ±.8 micron [45 ± 5 microinch]. 46 Silicon Drive Durham, NC 77
14 PTFB99EA/FA 4 Revision History Revision Date Data Sheet Type Page Subjects (major changes at each revision) -9- Advance All New product PTFB98FA, proposed only. --5 Advance All Product number revised Advance All Added eared package H Production All Products released to production: specifications finalized, circuit information added Production All Production 7 - Version (V) products will replace previous Version (V) products. No change to form, fit or function. Correct label for output schematic. Identify component manufacturer and part number Production Updated ordering code to R Production All Converted to Wolfspeed Data Sheet For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA 77 Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 8 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc.
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PTF181 LDMOS RF Power Field Effect Transistor W, 185 188 MHz, 193 199 MHz W, 21 217 MHz Description Features The PTF181 is a W, internally matched GOLDMOS FET device intended for EDGE applications in the
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More information= 25 C) Note: Measured at -30 dbc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.
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