BLF6G10LS Product profile. Power LDMOS transistor. 1.1 General description. 1.2 Features
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1 Rev January 8 Preliminary data sheet 1. Product profile 1.1 General description W LDMOS power transistor for base station applications at frequencies from 8 MHz to 1 MHz. Table 1. Typical performance Typical RF performance at T case = 25 C in a class-ab production test circuit. Mode of operation f V DS P L(AV) ACPR (MHz) (V) (W) (db) (%) (dbc) 2-carrier W-CDMA 869 to [1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 db at.1 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an I Dq of 14 ma: Average output power = 4 W Power gain = db Efficiency = 27 % ACPR = 41 dbc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (8 MHz to 1 MHz) Internally matched for ease of use Compliant to Directive 2/95/EC, regarding Restriction of Hazardous Substances (RoHS)
2 1.3 Applications 2. Pinning information RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 8 MHz to 1 MHz frequency range. Table 2. Pinning Pin Description Simplified outline Symbol 1 drain 2 gate source [1] sym112 [1] Connected to flange 3. Ordering information 4. Limiting values Table 3. Ordering information Type number Package Name Description Version - earless flanged LDMOST ceramic package; 2 leads SOT52B 5. Thermal characteristics Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6134). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage - 65 V V GS gate-source voltage V I D drain current - 49 A T stg storage temperature C T j junction temperature C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-case) thermal resistance from junction to case T case =8 C; P L = 4 W.34 K/W _1 Preliminary data sheet Rev January 8 2 of 11
3 6. Characteristics 7. Application information Table 6. Characteristics T j = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V (BR)DSS drain-source breakdown V GS =V; I D =.9 ma V voltage V GS(th) gate-source threshold voltage V DS =1V;I D = 27 ma V V GSq gate-source quiescent voltage V DS = 28 V; V I D = 16 ma I DSS drain leakage current V GS =V; V DS =28V µa I DSX drain cut-off current V GS =V GS(th) V; A V DS =1V I GSS gate leakage current V GS = 11 V; V DS = V na g fs forward transconductance V DS =1V; I D = 9.45 A S R DS(on) drain-source on-state resistance V GS =V GS(th) V; I D = 9.45 A C rs feedback capacitance V GS =V; V DS =28V; f= 1MHz Ω pf Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 db at.1 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f 1 = MHz; f 2 = MHz; f 3 = MHz; f 4 = MHz; RF performance at V DS =28V; I Dq = 14 ma; T case =25 C; unless otherwise specified; in a class-ab production test circuit. Symbol Parameter Conditions Min Typ Max Unit P L(AV) average output power W power gain P L(AV) = 4 W db RL in input return loss P L(AV) = 4 W db drain efficiency P L(AV) = 4 W % ACPR adjacent channel power ratio P L(AV) = 4 W dbc 7.1 Ruggedness in class-ab operation The is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the following conditions: V DS =28V; I Dq = 14 ma; P L = W; f = 894 MHz. _1 Preliminary data sheet Rev January 8 3 of 11
4 7.2 One-tone CW 22 (db) 21 1aah526 7 (%) P L (W) Fig 1. V DS = 28 V; I Dq = 14 ma; f = 894 MHz. One-tone CW power gain and drain efficiency as functions of load power; typical values 7.3 Two-tone CW 22 1aah534 6 (db) 4 (%) P L(PEP) (W) Fig 2. V DS = 28 V; I Dq = 14 ma; f 1 = MHz; f 2 = MHz. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values _1 Preliminary data sheet Rev January 8 4 of 11
5 1aah535 1aah536 IMD (dbc) IMD3 IMD3 (dbc) 4 IMD5 4 6 IMD7 6 (5) (4) (1) (3) (2) P L(PEP) (W) P L(PEP) (W) Fig 3. V DS = 28 V; I Dq = 14 ma; f 1 = MHz; f 2 = MHz. Two-tone CW intermodulation distortion as function of peak envelope load power; typical values Fig 4. V DS = 28 V; f 1 = MHz; f 2 = MHz. (1) 13 MHz (2) 135 MHz (3) 14 MHz (4) 145 MHz (5) 15 MHz Third order intermodulation distortion as a function of peak envelope load power; typical values carrier W-CDMA 22 1aah aah538 (db) 21 4 (%) ACPR (dbc) P L(AV) (W) P L(AV) (W) V DS = 28 V; I Dq = 14 ma; f 1 = MHz; f 2 = MHz; carrier spacing 5 MHz. V DS = 28 V; I Dq = 14 ma; f 1 = MHz; f 2 = MHz; carrier spacing 5 MHz. Fig 5. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values Fig 6. 2-carrier W-CDMA adjacent channel power ratio as function of average load power; typical values _1 Preliminary data sheet Rev January 8 5 of 11
6 8. Test information V GG V DD R3 C1 C6 C7 C3 C1 R1 R2 L1 C13 input 5 Ω C2 C5 output 5 Ω C14 C15 C C8 C9 C4 C11 C12 1aah539 Fig 7. The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε r = 3.5 and thickness =.76 mm. See Table 8 for list of components. Test circuit for operation at 8 MHz C6 C7 R2 C1 Q3 C3 C1 L1 R3 C13 R1 C18 C5 C2 C14 C15 C19 C C4 C11 C12 NXP IN 8-1 MHz V1. C8 C9 NXP OUT 8-1 MHz V1. 1aah54 Fig 8. The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε r = 3.5 and thickness =.76 mm. See Table 8 for list of components. Component layout _1 Preliminary data sheet Rev January 8 6 of 11
7 Table 8. List of components (see Figure 7 and Figure 8) All capacitors should be soldered vertically except C. Component Description Value Remarks C1, C2, C3, C4, C5 multilayer ceramic chip capacitor 68 pf [1] C6, C7, C8, C9 multilayer ceramic chip capacitor 33 nf [2] C1, C11 multilayer ceramic chip capacitor 4.7 µf [2] C12, C13 Electrolytic capacitor 2 µf; 63 V C14 multilayer ceramic chip capacitor 4.7 pf; 5 V [1] C15 multilayer ceramic chip capacitor 9.1 pf [1] C18, C19 multilayer ceramic chip capacitor 1 pf [1] C multilayer ceramic chip capacitor 1.5 pf; V [1] L1 Ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent Q1 BLC6G1LS-16 - R1, R2, R3 SMD resistor 9.1 Ω;.1 W [1] American Technical Ceramics type 1B or capacitor of same quality. [2] TDK or capacitor of same quality. _1 Preliminary data sheet Rev January 8 7 of 11
8 9. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT52B D A 3 F D 1 D U 1 c L 1 H U 2 E 1 E 2 b w 2 M D M Q 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D 1 E E 1 F H L Q U 1 U 2 w 2 mm inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT52B Fig 9. Package outline SOT52B _1 Preliminary data sheet Rev January 8 8 of 11
9 1. Abbreviations Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Dedicated Physical CHannel Enhanced Data rates for GSM Evolution Global System for Mobile communications Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access 11. Revision history Table 1. Revision history Document ID Release date Data sheet status Change notice Supersedes _ Preliminary data sheet - - _1 Preliminary data sheet Rev January 8 9 of 11
10 12. Legal information 12.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail Disclaimers General Information in this document is believed to be accurate and reliable. However, does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an product can reasonably be expected to result in personal injury, death or severe property or environmental damage. accepts no liability for inclusion and/or use of products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: For sales office addresses, send an to: salesaddresses@nxp.com _1 Preliminary data sheet Rev January 8 1 of 11
11 14. Contents 1 Product profile General description Features Applications Pinning information Ordering information Limiting values Thermal characteristics Characteristics Application information Ruggedness in class-ab operation One-tone CW Two-tone CW carrier W-CDMA Test information Package outline Abbreviations Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 18 January 8 Document identifier: _1
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