PVR100AZ-B series. Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number Package SOT457 complement

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1 Rev November 26 Product data sheet 1. Product profile 1.1 General description Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number Package SOT457 complement NXP JEITA PVR1AZ-B2V5 SOT223 SC-73 PVR1AD-B2V5 PVR1AZ-B3V PVR1AD-B3V PVR1AZ-B3V3 PVR1AD-B3V3 PVR1AZ-B5V PVR1AD-B5V PVR1AZ-B12V PVR1AD-B12V 1.2 Features Integrated Zener diode and bipolar transistor Output voltage options: 2.5 V, 3 V, 3.3 V, 5 V and 12 V Output power dissipation capability: 1.3 W Medium power Surface-Mounted Device (SMD) plastic package 1.3 Applications Linear voltage regulation 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit NPN transistor V CEO collector-emitter open base V voltage I C collector current A h FE DC current gain V CE =1V; I C = 1 ma 16-4

2 Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Zener diode V Z working voltage I Z =5mA PVR1AZ-B2V V PVR1AZ-B3V V PVR1AZ-B3V V PVR1AZ-B5V V PVR1AZ-B12V V Voltage regulator V O output voltage I O =1mA PVR1AZ-B2V5 V I = 4.5 V; I ctrl = 3.5 ma V PVR1AZ-B3V V I =5V; V PVR1AZ-B3V3 V I = 5.3 V; V PVR1AZ-B5V V I =7V; I ctrl = 1 ma V PVR1AZ-B12V V I =14V; I ctrl = 5 ma V Line regulation V O /V O relative output voltage variation I O =1mA PVR1AZ-B2V5 4.5 V V I 4 V; I ctrl = 3.5 ma % PVR1AZ-B3V 5 V V I 4 V; % PVR1AZ-B3V3 5.3 V V I 4 V; % PVR1AZ-B5V 7 V V I 4 V; I ctrl =1mA % PVR1AZ-B12V 14 V V I 4 V; I ctrl =5mA % Load regulation V O /V O relative output voltage variation 5mA I O 1 ma PVR1AZ-B2V5 V I = 4.5 V; I ctrl = 3.5 ma % PVR1AZ-B3V V I =5V; % PVR1AZ-B3V3 V I = 5.3 V; % PVR1AZ-B5V V I =7V; I ctrl =1mA % PVR1AZ-B12V V I =14V; I ctrl =5mA % Pulse test: t p 3 µs; δ.2. Product data sheet Rev November 26 2 of 17

3 2. Pinning information Table 3. Pinning Pin Symbol Description Simplified outline Symbol 1 REXT base 2 GND ground 4 3 VO output voltage 4 VI input voltage D1 TR aaa Ordering information 4. Marking Table 4. Ordering information Type number Package Name Description Version PVR1AZ-B2V5 SC-73 plastic surface-mounted package with increased SOT223 PVR1AZ-B3V PVR1AZ-B3V3 PVR1AZ-B5V PVR1AZ-B12V heat sink; 4 leads Table 5. Marking codes Type number PVR1AZ-B2V5 PVR1AZ-B3V PVR1AZ-B3V3 PVR1AZ-B5V PVR1AZ-B12V Marking code AZ-B2V5 AZ-B3V AZ-B3V3 AZ-B5V AZ-B12V Product data sheet Rev November 26 3 of 17

4 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6134). Symbol Parameter Conditions Min Max Unit NPN transistor V CBO collector-base voltage open emitter - 5 V V CEO collector-emitter voltage open base - 45 V V EBO emitter-base voltage open collector - 5 V I C collector current -.1 A I CM peak collector current single pulse; -.2 A t p 1ms I BM peak base current single pulse; -.2 A t p 1ms P tot total power dissipation T amb 25 C -.55 W [2] W [3] W Zener diode I F forward current - 2 ma I ZSM non-repetitive peak reverse V Z <6V - 6 A current V Z = 13 V A P tot total power dissipation T amb 25 C -.15 W Voltage regulator P tot total power dissipation T amb 25 C -.65 W [2] W [3] W T j junction temperature - 15 C T amb ambient temperature C T stg storage temperature C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. Product data sheet Rev November 26 4 of 17

5 1.6 P tot (W) 1.2 (1) (2) 6aaa844.8 (3) T amb ( C) (1) Ceramic PCB, Al 2 O 3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm 2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit NPN transistor R th(j-a) thermal resistance from in free air K/W junction to ambient [2] K/W [3] K/W R th(j-sp) thermal resistance from junction to solder point Zener diode R th(j-a) thermal resistance from junction to ambient Voltage regulator R th(j-a) thermal resistance from junction to ambient K/W in free air K/W in free air K/W [2] K/W [3] K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint. Product data sheet Rev November 26 5 of 17

6 7. Characteristics Table 8. Characteristics T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit NPN transistor I CBO collector-base cut-off current V CB =2V; I E = A na V CB =2V; µa I E = A; T j = 15 C I EBO emitter-base cut-off V EB =5V; I C = A na current h FE DC current gain V CE =1V; 16-4 I C = 1 ma V BE base-emitter voltage V CE =1V; V I C =1mA Zener diode V F forward voltage I F = 1 ma V I R reverse current PVR1AZ-B2V5 V R =1V µa PVR1AZ-B3V V R =1V µa PVR1AZ-B3V3 V R =1V µa PVR1AZ-B5V V R =2V µa PVR1AZ-B12V V R = 8 V µa V Z working voltage I Z =5mA PVR1AZ-B2V V PVR1AZ-B3V V PVR1AZ-B3V V PVR1AZ-B5V V PVR1AZ-B12V V r dif differential resistance I Z =1mA PVR1AZ-B2V Ω PVR1AZ-B3V Ω PVR1AZ-B3V3-4 6 Ω PVR1AZ-B5V Ω PVR1AZ-B12V Ω r dif differential resistance I Z =5mA PVR1AZ-B2V Ω PVR1AZ-B3V Ω PVR1AZ-B3V Ω PVR1AZ-B5V Ω PVR1AZ-B12V Ω Product data sheet Rev November 26 6 of 17

7 Table 8. Characteristics continued T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit S Z temperature coefficient I Z =5mA PVR1AZ-B2V mv/k PVR1AZ-B3V mv/k PVR1AZ-B3V mv/k PVR1AZ-B5V mv/k PVR1AZ-B12V mv/k Voltage regulator V O output voltage I O =1mA PVR1AZ-B2V5 V I = 4.5 V; V I ctrl = 3.5 ma PVR1AZ-B3V V I =5V; V PVR1AZ-B3V3 V I = 5.3 V; V PVR1AZ-B5V V I =7V; V I ctrl =1mA PVR1AZ-B12V V I =14V; I ctrl =5mA V V O /(V O T amb ) Line regulation V O /V O relative output voltage variation over ambient temperature I O = 1 ma; T amb = 55 C to 15 C PVR1AZ-B2V5 V I = 4.5 V /K PVR1AZ-B3V V I =5V /K PVR1AZ-B3V3 V I = 5.3 V /K PVR1AZ-B5V V I = 7 V /K PVR1AZ-B12V V I =14V /K relative output voltage variation I O =1mA PVR1AZ-B2V5 4.5 V V I 4 V; I ctrl = 3.5 ma PVR1AZ-B3V 5 V V I 4 V; PVR1AZ-B3V3 5.3 V V I 4 V; PVR1AZ-B5V 7 V V I 4 V; I ctrl =1mA PVR1AZ-B12V 14 V V I 4 V; I ctrl =5mA % % % % % Product data sheet Rev November 26 7 of 17

8 Table 8. Characteristics continued T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V O /(V O V I ) Load regulation V O /V O V O /(V O I O ) relative output voltage variation over input voltage Pulse test: t p 3 µs; δ.2. I O =1mA PVR1AZ-B2V5 4.5 V V I 4 V; I ctrl = 3.5 ma PVR1AZ-B3V 5 V V I 4 V; PVR1AZ-B3V3 5.3 V V I 4 V; PVR1AZ-B5V 7 V V I 4 V; I ctrl =1mA PVR1AZ-B12V 14 V V I 4 V; I ctrl =5mA relative output voltage variation 5mA I O 1 ma PVR1AZ-B2V5 V I = 4.5 V; I ctrl = 3.5 ma PVR1AZ-B3V V I =5V; PVR1AZ-B3V3 V I = 5.3 V; PVR1AZ-B5V V I =7V; I ctrl =1mA PVR1AZ-B12V V I =14V; I ctrl =5mA relative output voltage variation over output current 5mA I O 1 ma PVR1AZ-B2V5 V I = 4.5 V; I ctrl = 3.5 ma PVR1AZ-B3V V I =5V; PVR1AZ-B3V3 V I = 5.3 V; PVR1AZ-B5V V I =7V; I ctrl =1mA PVR1AZ-B12V V I =14V; I ctrl =5mA /V /V /V /V /V % % % % % /ma /ma /ma /ma /ma Product data sheet Rev November 26 8 of 17

9 6 h FE 4 (1) (2) 6aaa845 I C (A) I B (ma) = aaa (3) I C (ma) V CE (V) Fig 2. V CE =1V (1) T amb = 15 C (2) T amb =25 C (3) T amb = 55 C NPN transistor: DC current gain as a function of collector current; typical values Fig 3. T amb =25 C NPN transistor: Collector current as a function of collector-emitter voltage; typical values 1.2 6aaa848 V BE (V).8 (1) (2).4 (3) I C (ma) V CE =1V (1) T amb = 55 C (2) T amb =25 C (3) T amb = 15 C Fig 4. NPN transistor: Base-emitter voltage as a function of collector current; typical values Product data sheet Rev November 26 9 of 17

10 6aaa853 1 V Z (V) = 12 6aaa854 S Z (mv/k) 1 2 V Z (V) = S Z (mv/k) I Z (ma) I Z (ma) Fig 5. T j =25 C to 15 C T j =25 C to 15 C Zener diode: Temperature coefficient as a function of working current; typical values Fig 6. Zener diode: Temperature coefficient as a function of working current; typical values Product data sheet Rev November 26 1 of 17

11 1.5 6aaa aaa85 V O (V) 1. (1) V O (V).5 (1).5 (3) (4) (2) (2) (3) (4).5 (5).5 (5) T amb ( C) V I =V O(typ) +2V; I O = 1 ma; T amb = 55 C to 15 C (1) PVR1AZ-B12V (2) PVR1AZ-B5V (3) PVR1AZ-B3V3 (4) PVR1AZ-B3V (5) PVR1AZ-B2V5 Fig 7. Voltage regulator: Output voltage variation as a function of ambient temperature; typical values Fig V I (V) T amb =25 C; I O =1mA (1) PVR1AZ-B12V; I ctrl =5mA (2) PVR1AZ-B3V3; (3) PVR1AZ-B3V; (4) PVR1AZ-B2V5; I ctrl = 3.5 ma (5) PVR1AZ-B5V; I ctrl =1mA Voltage regulator: Output voltage variation as a function of input voltage; typical values.2 6aaa851 V O (V).1 (1) (2) (3) (4) (5) I O (ma) T amb =25 C; V I =V O(typ) +2V (1) PVR1AZ-B12V; I ctrl =5mA (2) PVR1AZ-B3V3; (3) PVR1AZ-B3V; (4) PVR1AZ-B2V5; I ctrl = 3.5 ma (5) PVR1AZ-B5V; I ctrl =1mA Fig 9. Voltage regulator: Output voltage variation as a function of output current; typical values Product data sheet Rev November of 17

12 8. Test information IO I1 TR1 = VI I2 V VO D1 6aaa693 Fig 1. Voltage regulator test setup 9. Package outline Dimensions in mm Fig 11. Package outline SOT223 (SC-73) Product data sheet Rev November of 17

13 1. Packing information 11. Soldering Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description Packing quantity 1 4 PVR1AZ-B2V5 SOT223 8 mm pitch, 12 mm tape and reel PVR1AZ-B3V PVR1AZ-B3V3 PVR1AZ-B5V PVR1AZ-B12V For further information and the availability of packing methods, see Section (4 ) solder lands occupied area 1.2 (3 ) 1.3 (3 ) solder paste solder resist Dimensions in mm sot223_fr Fig 12. Reflow soldering footprint SOT223 (SC-73) Product data sheet Rev November of 17

14 (2 ) transport direction during soldering solder lands occupied area solder resist Dimensions in mm sot223_fw Fig 13. Wave soldering footprint SOT223 (SC-73) Product data sheet Rev November of 17

15 12. Revision history Table 1. Revision history Document ID Release date Data sheet status Change notice Supersedes Product data sheet - - Product data sheet Rev November of 17

16 13. Legal information 13.1 Data sheet status Document status [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: For sales office addresses, send an to: salesaddresses@nxp.com Product data sheet Rev November of 17

17 15. Contents 1 Product profile General description Features Applications Quick reference data Pinning information Ordering information Marking Limiting values Thermal characteristics Characteristics Test information Package outline Packing information Soldering Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: For sales office addresses, please send an to: salesaddresses@nxp.com Date of release: 16 November 26 Document identifier:

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