PBSS4041PX. 1. Product profile. 60 V, 5 A PNP low V CEsat (BISS) transistor. 1.1 General description. 1.2 Features and benefits. 1.
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1 Rev. 0 April 200 Product data sheet. Product profile. General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS404NX..2 Features and benefits Very low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High collector current gain (h FE ) at high I C High energy efficiency due to less heat generation AEC-Q0 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans).4 Quick reference data Table. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V CEO collector-emitter voltage open base V I C collector current A I CM peak collector current single pulse; A t p ms R CEsat collector-emitter saturation resistance I C = 4 A; I B = 400 ma mω Pulse test: t p 300 μs; δ 0.02.
2 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol emitter 2 collector 2 3 base aaa23 3. Ordering information 4. Marking Table 3. Ordering information Type number Package Name Description Version SC-62 plastic surface-mounted package; 3 leads SOT89 5. Limiting values Table 4. Marking codes Type number Marking code *6G * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 6034). Symbol Parameter Conditions Min Max Unit V CBO collector-base voltage open emitter - 60 V V CEO collector-emitter voltage open base - 60 V V EBO emitter-base voltage open collector - 5 V I C collector current - 5 A I CM peak collector current single pulse; - 5 A t p ms I B base current - A _ Product data sheet Rev. 0 April of 5
3 Table 5. Limiting values continued In accordance with the Absolute Maximum Rating System (IEC 6034). Symbol Parameter Conditions Min Max Unit P tot total power dissipation T amb 25 C mw [2] mw [3] mw T j junction temperature - 50 C T amb ambient temperature C T stg storage temperature C Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint aac74 P tot (W) () T amb ( C) () Ceramic PCB, Al 2 O 3, standard footprint FR4 PCB, mounting pad for collector 6 cm 2 FR4 PCB, standard footprint Fig. Power derating curves _ Product data sheet Rev. 0 April of 5
4 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from in free air K/W junction to ambient [2] K/W [3] K/W R th(j-sp) thermal resistance from junction to solder point K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm 2. [3] Device mounted on a ceramic PCB, Al 2 O 3, standard footprint aac75 Z th(j-a) (K/W) duty cycle = t p (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values _ Product data sheet Rev. 0 April of 5
5 0 2 Z th(j-a) (K/W) duty cycle = aac t p (s) Fig 3. FR4 PCB, mounting pad for collector 6 cm 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 0 2 duty cycle = 006aac77 Z th(j-a) (K/W) t p (s) Fig 4. Ceramic PCB, Al 2 O 3, standard footprint Transient thermal impedance from junction to ambient as a function of pulse duration; typical values _ Product data sheet Rev. 0 April of 5
6 7. Characteristics Table 7. Characteristics T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit I CBO collector-base cut-off V CB = 60 V; I E =0A na current V CB = 60 V; I E =0A; μa T j =50 C I CES collector-emitter V CE = 48 V; V BE =0V na cut-off current I EBO emitter-base cut-off current V EB = 5 V; I C =0A na h FE DC current gain V CE = 2 V V CEsat R CEsat V BEsat V BEon collector-emitter saturation voltage collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage Pulse test: t p 300 μs; δ I C = 500 ma I C = A I C = 2 A I C = 4 A I C = 6 A I C = A; I B = 50 ma mv I C = A; I B = 0 ma mv I C = 2 A; I B = 40 ma mv I C = 4 A; I B = 200 ma mv I C = 4 A; I B = 400 ma mv I C = 5 A; I B = 500 ma mv I C = 4 A; I B = 400 ma mω I C = A; I B = 00 ma V I C = 4 A; I B = 400 ma V V CE = 2 V; I C = 2 A V t d delay time V CC = 2.5 V; ns t I C = A; I Bon = 0.05 A; r rise time ns I Boff =0.05A t on turn-on time ns t s storage time ns t f fall time ns t off turn-off time ns f T transition frequency V CE = 0 V; I C = 00 ma; f=00mhz MHz C c collector capacitance V CB = 0 V; I E =i e =0A; f=mhz pf _ Product data sheet Rev. 0 April of 5
7 500 h FE 400 () 006aac I C (A) I B (ma) = aac I C (ma) V CE (V) Fig 5. V CE =2V () T amb = 00 C T amb =25 C T amb = 55 C DC current gain as a function of collector current; typical values Fig 6. T amb =25 C Collector current as a function of collector-emitter voltage; typical values.2 006aac aac22 V BE (V) V BEsat (V) 0.8 ().0 () I C (ma) I C (ma) Fig 7. V CE =2V () T amb = 55 C T amb =25 C T amb = 00 C Base-emitter voltage as a function of collector current; typical values Fig 8. I C /I B =20 () T amb = 55 C T amb =25 C T amb = 00 C Base-emitter saturation voltage as a function of collector current; typical values _ Product data sheet Rev. 0 April of 5
8 006aac aac223 V CEsat (V) V CEsat (V) 0 () 0 () I C (ma) I C (ma) Fig 9. I C /I B =20 () T amb = 00 C T amb =25 C T amb = 55 C Collector-emitter saturation voltage as a function of collector current; typical values Fig 0. T amb =25 C () I C /I B = 00 I C /I B =50 I C /I B =0 Collector-emitter saturation voltage as a function of collector current; typical values aac aac225 R CEsat (Ω) R CEsat (Ω) () 0 () I C (ma) I C (ma) Fig. I C /I B =20 () T amb = 00 C T amb =25 C T amb = 55 C Collector-emitter saturation resistance as a function of collector current; typical values Fig 2. T amb =25 C () I C /I B = 00 I C /I B =50 I C /I B =0 Collector-emitter saturation resistance as a function of collector current; typical values _ Product data sheet Rev. 0 April of 5
9 8. Test information I B 90 % input pulse (idealized waveform) I Bon (00 %) 0 % I Boff I C output pulse (idealized waveform) 90 % I C (00 %) 0 % t t d t r t s toff t f ton 006aaa266 Fig 3. BISS transistor switching time definition V BB V CC R B R C oscilloscope (probe) 450 Ω V o (probe) 450 Ω oscilloscope V I R2 DUT R mgd624 Fig 4. Test circuit for switching times 8. Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q0 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. _ Product data sheet Rev. 0 April of 5
10 9. Package outline Dimensions in mm Fig 5. Package outline SOT89 (SC-62) 0. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 2NC ordering code. Type number Package Description Packing quantity SOT89 8 mm pitch, 2 mm tape and reel; T [2] mm pitch, 2 mm tape and reel; T3 [3] For further information and the availability of packing methods, see Section 4. [2] T: normal taping [3] T3: 90 rotated taping _ Product data sheet Rev. 0 April of 5
11 . Soldering solder lands.2.7 solder resist solder paste (3 ). (2 ) occupied area Dimensions in mm (3 ) 0.7 (3 ) 3.95 sot089_fr Fig 6. Reflow soldering footprint SOT89 (SC-62) solder lands solder resist.8 (2 ) occupied area Dimensions in mm preferred transport direction during soldering.5 (2 ) sot089_fw Fig 7. Wave soldering footprint SOT89 (SC-62) _ Product data sheet Rev. 0 April 200 of 5
12 2. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes _ Product data sheet - - _ Product data sheet Rev. 0 April of 5
13 3. Legal information 3. Data sheet status Document status [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 3.3 Disclaimers Limited warranty and liability Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Right to make changes Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer s third party customer(s) (hereinafter both referred to as Application ). It is customer s sole responsibility to check whether the Nexperia product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. Nexperia does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6034) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 3.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. _ Product data sheet Rev. 0 April of 5
14 4. Contact information For more information, please visit: For sales office addresses, please send an to: _ Product data sheet Rev. 0 April of 5
15 5. Contents Product profile General description Features and benefits Applications Quick reference data Pinning information Ordering information Marking Limiting values Thermal characteristics Characteristics Test information Quality information Package outline Packing information Soldering Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Contents For more information, please visit: For sales office addresses, please send an to: salesaddresses@nexperia.com Date of release: 0 April 200
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PDTC4Z series NPN resistor-equipped transistors; R = 4.7 k, R2 = 47 k Rev. 8 5 December 20 Product data sheet. Product profile. General description NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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50 V, 0 ma NPN/PNP Resistor-Equipped double Transistors (RET) 29 July 207 Product data sheet. General description NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN42-6 (SOT268) leadless
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationBC857QAS. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data
8 July 2015 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement:
More informationGeneral-purpose switching and amplification Mobile applications
10 September 2018 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Quick reference data NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216)
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More informationPNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)
More informationBC857xMB series. 45 V, 100 ma PNP general-purpose transistors
SOT883B Rev. 1 21 February 2012 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. Table 1. Product
More informationPEMD48; PUMD48. NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω
; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω Rev. 05 13 April 20 Product data sheet 1. Product profile 1.1 General description NPN/PNP double Resistor-Equipped Transistors (RET) in small Surface-Mounted
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24 April 2018 Product data sheet 1. General description PNP/PNP matched double transistors in an ultra small DFN1010B-6 (SOT1216) leadless Surface- Mounted Device (SMD) plastic package. NPN/NPN complement:
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationHigh-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 07 14 April 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration
More information65 V, 100 ma NPN general-purpose transistors
Rev. 8 24 April 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number
More information65 V, 100 ma NPN/NPN general-purpose transistor. Type number Package PNP/PNP NPN/PNP complement complement
Rev. 01 24 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product
More informationLow current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications Mobile applications
NPN/NPN resistor-equipped transistors; R = 47 kω, R2 = 47 kω 4 November 205 Product data sheet. General description NPN/NPN Resistor-Equipped Transistors (RET) in a leadless ultra small DFN00B-6 (SOT26)
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationLoadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
4 V, 2 A PNP low V CEsat (BISS) transistor with N-channel Trench MOSFET Rev. 2 2 April 2 Product data sheet. Product profile. General description Combination of PNP low V CEsat Breakthrough In Small Signal
More informationHigh-speed switching diodes. Type number Package Configuration Package Nexperia JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
More informationPMEG4010ETP. 40 V, 1 A low VF MEGA Schottky barrier rectifier. Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply
Rev. 5 October 20 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection,
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Rev. 24 January 20 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection,
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7 December 2018 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Quick reference data, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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Rev. 0 6 November 2006 Product data sheet. Product profile. General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor and high-speed switching diode to protect the base-emitter
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Rev. 7 20 January 2011 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed
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Rev. 2 5 April 2 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection,
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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14 September 2018 Product data sheet 1. General description 2. Features and benefits 3. Applications 4. Quick reference data with common cathode configurations encapsulated in a leadless ultra small DFN1412-6
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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4 May 206 Product data sheet. General description, encapsulated in a leadless ultra small DFN00D-3 (SOT25) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
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29 June 2018 Product data sheet 1. General description, in an ultra small SOD523 (SC-72) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: t rr 50 ns
More informationTable 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current [1] ma V R reverse voltage V V RRM
23 March 2018 Product data sheet 1. General description in a very small SOD323F (SC-90) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: t rr 50 ns
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Rev. 1 13 September 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted
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Rev. 2 August 2 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-7) Surface-Mounted Device (SMD) plastic package using
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Rev. 3 22 July 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device
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