Preliminary GTVA126001EC/FC
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1 g126001efc-gr1 Thermally-Enhanced High Power RF an on SiC HEMT 600 W, 50 V, MHz Description The TVA126001EC and TVA126001FC are 600-watt an on SiC high electron mobility transistors (HEMT) for use in the 10 to 1400 MHz frequecy band. They feature input matching, high efficiency, and thermally-enhanced packages. TVA126001EC Package H ain (db) Power Sweep: ain & Efficiency 50 V, IDQ = 100 ma, 300 µs pulse width, 10% duty cycle 10 MHz MHz 1400 MHz Output Power (W) Efficiency (%) TVA126001FC Package H Features an on SiC HEMT technology Input matched Typical pulsed CW performance (class AB), 10 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power P 3dB = 600 W - Drain efficiency = 65% - ain = 18 db Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 µs pulse width, 10% duty cycle, V DD = 50 V, I DQ = 100 ma Pb-free and RoHS compliant RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fixture) V DD = 50 V, I DQ = 100 ma, P OUT = 600 W, ƒ1 = 10 MHz, ƒ2 = 1400 MHz, 300 µs pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit ain ps db Drain Efficiency h D % All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions!
2 2 DC Characteristics (measured on wafer prior to packaging) Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V S = 8 V, I D = TBD ma V (BR)DSS 150 V Drain-source Leakage Current V S = 8 V, V DS = 50 V I DSS TBD ma ate Threshold Voltage V DS = 10 V, I D = 100 ma V S(th) V ate Quiescent Voltage V DS = 50 V, I D = TBD ma V S(Q) TBD V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage V DD 0 55 V ate Quiescent Voltage V DS = 50 V, I D = 100 ma V S(Q) 2.8 V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage V DSS 125 V ate-source Voltage V S 10 to +2 V Operating Voltage V DD 0 to +50 V ate Current I TBD ma Drain Current I D TBD A Junction Temperature T J 225 C Storage Temperature Range T ST 65 to +150 C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD ) specified above. Thermal Characteristics T CASE = 70 C, 676 W (peak), 50 V, I DQ = 100 ma, 10 MHz, 2 ms pulse width, 10% duty cycle Characteristic Symbol Value Unit Thermal Resistance R qjc 0.16 C/W
3 g126001efc-gr2 g126001efc-gr3 3 Ordering Information Type and Version Order Code Package and Description Shipping TVA126001EC V1 R0 TBD H , single-ended, bolt-down flange Tape & Reel, 50 pcs TVA126001EC V1 R2 TBD H , single-ended, bolt-down flange Tape & Reel, 250 pcs TVA126001FC V1 R0 TBD H , single-ended, earless flange Tape & Reel, 50 pcs TVA126001FC V1 R2 TBD H , single-ended, earless f flange Tape & Reel, 250 pcs Typical Performance Pulse Droop and IRL V DS = 50 V, I DQ = 100 ma, P P 3db 300 µs pulse width, 10% duty cycle Frequency Sweep V DS = 50 V, I DQ = 100 ma, P P 3dB 300 µs pulse width, 10% duty cycle Droop (db) Droop IRL Input Return Loss (db) ain (db), Efficiency (%) ain Efficiency Output Power Output Power (W) Frequency (MHz) Frequency (MHz)
4 g126001efc-gr1 4 Typical Performance (cont.) Power Sweep 50 V, IDQ = 100 ma, ƒ = 10 MHz Power Sweep: ain & Efficiency 50 V, IDQ = 100 ma, 300 µs pulse width, 10% duty cycle ain (db) µs, 10% 1 ms, 10% 30 2 ms, 10% 2 ms, % Output Power (W) Efficiency (%) ain (db) MHz 1300 MHz 1400 MHz g126001efc-gr Output Power (W) Efficiency (%) See next page for reference circuit information
5 g t va e f c_ C D_ Reference Circuit tuned for 10 to 1400 MHz DUT TVA126001EC/FC V1 Test Fixture Part No. LTN/TVA126001EC V1, LTN/TVA126001FC V1LTN/TVA126001EC/FC PCB Rogers 4350, mm [.0"] thick, 2 oz. copper, ε r = 3.66 Find erber files for this test fixture on the Wolfspeed Web site at RO4350, MIL (62) RO4350, MIL (62) V C106 C105 R103 R102 R101 C4 C6 C7 C8 C9 C214 C216 VDD RF_IN C104 C103 R104 C101 C102 C1 C2 C3 RF_OUT C210 C212 C215 C217 VDD C211 C213 C5 TVA126001EFC_IN_08B TVA126001EFC_OUT_08A Reference circuit assembly diagram (not to scale) Components Information Component Description Manufacturer P/N Input C101, C102 Capacitor, 1.2 pf ATC ATC800A1R2CT250T C103, C104 Capacitor, 56 pf ATC ATC800A560JT250T C105 Capacitor, 39 pf ATC ATC100B390JW500XB C106 Capacitor, 1 µf TDK Corporation C4532X7R2A105M230KA R101 Resistor, 10 ohms Panasonic Electronic Components ERJ-3EYJ100V R102 Resistor, 100 ohms Panasonic Electronic Components ERJ-3EYJ101V R103 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R104 Resistor, 30 ohms Panasonic Electronic Components ERJ-8EYJ300V table contineued next page
6 h _ h _ Reference Circuit (cont.) Component Description Manufacturer P/N Output C1 Capacitor, 1.6 pf ATC ATC800A1R6CT250T C2 Capacitor, 3.6 pf ATC ATC100A3R6CW150XB C3 Capacitor, 56 pf ATC ATC800A560JT250T C4, C5 Capacitor, 39 pf ATC ATC100B390JW500XB C6, C7, C8, C9, Capacitor, 10 µf, 100 V TDK Corporation C5750X7S2A106M230KB C210, C211, C212, C213 C214, C215 Capacitor, 22 µf Cornell Dubilier Electronics (CDE) SEK2M100ST C216, C217 Capacitor, 2 µf Panasonic Electronic Components ECA-2AH221 Pinout Diagram (top view) D S Source (flange) Pin Description D Drain ate S Source (flange) TVA126001EC Package H D Source (flange) TVA126001FC Package H Pin D S Description Drain ate Source (flange)
7 H _po_01.1_ Package Outline Specifications Package H X 2.7 [45 X.107] D 4.826±0.510 [.190±0.0] FLANE [.385] LID ± [ ] [.765±0.0] S 2X [.500] 2X R1.626 [R.064] 4X R1.524 [R.060] [1.100] [.040] ±0.0 [.780±0.008] SPH [0.062] 3.632±0.380 [.143±0.015] [1.340] Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M Primary dimensions are mm; alternate dimensions are inches 3. All tolerances ± [0.005] 4. Pins: D drain, gate, S source 5. Lead thickness: / mm [ / inch] 6. old plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
8 H _po_ Package Outline Specifications Package H X 2.7 [45 X.107] 4.826±0.510 [.190±0.0] D 4X R [ R ] FLANE [.385] LID [ ] ±0.510 [.765±0.0] 2X [.500] SPH [.062] ±0.0 [.780±0.008] [.040] 3.632±0.380 [.143±0.015] S.574 [.810] Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M Primary dimensions are mm; alternate dimensions are inches 3. All tolerances ± [0.005] 4. Pins: D drain, gate, S source 5. Lead thickness: / mm [ / inch] 6. old plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
9 9 Revision History Revision Date Data Sheet Page Subjects (major changes at each revision) Advance all Proposed specification for new product development Advance all Includes TVA126001FC product, package H Preliminary All Add preliminary performance information and circuit specifications Preliminary All Converted to Wolfspeed Data Sheet For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA Sales Contact RF Product Marketing Contact Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 18 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc.
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More information= 25 C) Parameter 8.0 GHz 9.0 GHz 10.0 GHz 11.0 GHz Units Small Signal Gain db P OUT. = 25 dbm W Power P IN
CMPA80B05D 5 W, 8.0 -.0 GHz, GaN MMIC, Power Amplifier Cree s CMP80B05D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has
More informationCMPA F. 30 W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Features. Applications
CMPA83F 3 W,. - 8. GHz, GaN MMIC, Power Amplifier Cree s CMPA83F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
More information= 25 C), 50 V. Parameter 800 MHz 850 MHz 900 MHz 950 MHz 1000 MHz Units. Small Signal Gain db
CGHV40180F 180 W, DC - 2000 MHz, 50 V, GaN HEMT Cree s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers
More informationtransistor is available in a flange and pill package. Package Types: & PN s: CGH40045F & CGH40045P
Rev 4.0 - May 2015 CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail,
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Rev 4.0 May 2015 CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree s CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
More information= 25 C), CW. Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain db P in. = 38 dbm
CGHV42PP 2 W, 5 V, GaN HEMT Cree s CGHV42PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV42PP, operating from a 5 volt rail, offers a general purpose, broadband
More information= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA6D Watt, MHz - 6 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA6D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
More information60 W, DC MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications. = 25 C) of Demonstration Amplifier
CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic
More informationMHz. The package options are ceramic/metal flange and pill package. Package Type: , PN: CGHV14250F, CGHV14250P
CGHV1425 25 W, 12-14 MHz, GaN HEMT for L-Band Radar Systems Cree s CGHV1425 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and
More informationtransistor is available in a flange and pill package. Package Types: & PN s: CG2H40045P & CG2H40045F
Rev 0.0 - May 2017 CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt
More information= 25 C), 50 V. Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units. Saturated Output Power W
CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide
More information= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
More informationCG2H W, DC - 6 GHz, RF Power GaN HEMT APPLICATIONS FEATURES
Rev 0.0 May 2017 CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt
More information= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
CMPA625F 25 W, 2 MHz-6 MHz, GaN MMIC Power Amplifier Cree s CMPA625F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
More information= 25 C) Note: Measured at -30 dbc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.
CGHV965F1 5 W, 7.9-9.6 GHz, 5-ohm, Input/Output Matched GaN HEMT Cree s CGHV965F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
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CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically
More informationmaintaining high gain and efficiency. Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain db = 28 dbm
CGHVF006S 6 W, DC - 5 GHz, 40V, GaN HEMT Cree s CGHVF006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
More informationPRELIMINARY. Cree s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor
PRELIMINARY CGHV597 7 W, 4.4-5.9 GHz, 5 V, RF Power GaN HEMT Cree s CGHV597 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV597, operating from a 5 volt
More informationCGHV1J025D. 25 W, 18.0 GHz, GaN HEMT Die
Rev 2.0 May 2017 CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25
More informationCGHV1J070D. 70 W, 18.0 GHz, GaN HEMT Die
Rev 1.0 May 2017 CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree s CGHV1J070D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25
More information= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA0060002D 2 Watt, MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
More information= 25 C) Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain db
CMPA273575D 75 W, 2.7-3.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA273575D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
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Rev 3.1 - November 2017 CGH40120P 120 W, RF Power GaN HEMT Cree s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail,
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CMPA558525F 25 W, 5.5-8.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA558525F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
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24W, 12.5V High Power RF LDMOS FETs Description The MR2006C is a 24-watt, Push-Pull configuration, unmatched LDMOS FETs, designed for ISM and Mobile radio applications with frequencies under 2GHz. It can
More information= 25 C) Parameter 5.5 GHz 6.5 GHz 7.5 GHz 8.5 GHz Units Small Signal Gain db P OUT
CMPA5585030D 30 W, 5.5-8.5 GHz, GaN MMIC, Power Amplifier Cree s CMPA5585030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
More informationtransistor is available in a flange and pill package. Package Types: & PN s: CG2H40045F & CG2H40045P
Rev 0.0 - May 2017 CG2H40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CG2H40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045, operating from a 28 volt
More information= 25 C), CW. Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain db P in. = 38 dbm
CGHV4PP W, 5 V, GaN HEMT Cree s CGHV4PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV4PP, operating from a 5 volt rail, offers a general purpose, broadband solution
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Rev 4.0 May 2015 CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for
More information= 25 C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Units Gain db W Power P OUT. = 43 dbm
CMPA2560025D 25 W, 2.5-6.0 GHz, GaN MMIC, Power Amplifier Cree s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
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CMPA1D1E025F 25 W, 13.75-14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier Cree s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated
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CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency,
More information= 25 C) Parameter 6.0 GHz 7.5 GHz 9.0 GHz 10.5 GHz 12.0 GHz Units Small Signal Gain db P OUT
CMPA601C025F 25 W, 6.0-12.0 GHz, GaN MMIC, Power Amplifier The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a
More information= 25 C), 50 V. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain db
CGHV40100 100 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general
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