= 25 C), 50 V. Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units. Saturated Output Power W

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1 CGHV W, DC - 6 GHz, 50V, GaN HEMT Cree s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package. Package Type: and PN: CGHV40030 Typical Performance GHz (T C = 25 C), 50 V Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units P SAT db Saturated Output Power W Drain P SAT % Note: Measured CW in the CGHV40030-AMP application circuit. Features Rev December 2016 Up to 6 GHz Operation 30 W Typical Output Power 16 db Gain Application circuit for GHz 70% Efficiency at P SAT 50 V Operation Subject to change without notice. 1

2 Absolute Maximum Ratings (not simultaneous) at 25 C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage V DSS 125 Volts 25 C Gate-to-Source Voltage V GS -10, +2 Volts 25 C Storage Temperature T STG -65, +150 C Operating Junction Temperature T J 225 C Maximum Forward Gate Current I GMAX 5.2 ma 25 C Maximum Drain Current 1 I DMAX 4.2 A 25 C Soldering Temperature 2 T S 245 C Case Operating Temperature 3 T C -40, +85 C Thermal Resistance, Junction to Case 4 R θjc 5.9 C/W 85 C Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at /document-library 3 P DISS = 23.4 W 4 CW Electrical Characteristics (T C = 25 C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics 1 Gate Threshold Voltage V GS(th) V DC V DS = 10 V, I D = 5.2 ma Gate Quiescent Voltage V GS(Q) -2.6 V DC V DS = 50 V, I D = 150 ma Saturated Drain Current 2 I DS A V DS = 6.0 V, V GS = 2.0 V Drain-Source Breakdown Voltage V (BR)DSS 125 V DC V GS = -8 V, I D = 5.2 ma RF Characteristics 3 (T C = 25 C, F 0 = 1.2 GHz unless otherwise noted) Power Gain 4 G P db V DD = 150 ma, P OUT = P SAT Output Power 4 P OUT W V DD = 150 ma, P OUT = P SAT Drain Efficiency 4 η % V DD = 150 ma, P OUT = P SAT Output Mismatch Stress 4 VSWR : 1 Y Dynamic Characteristics No damage at all phase angles, V DD = 150 ma, P OUT = 30 W CW Input Capacitance 5 C GS 7.4 pf V DS = 50 V, V gs = -8 V, f = 1 MHz Output Capacitance 5 C DS 2 pf V DS = 50 V, V gs = -8 V, f = 1 MHz Feedback Capacitance C GD 0.15 pf V DS = 50 V, V gs = -8 V, f = 1 MHz Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV40030-AMP 4 P SAT is defined as I G = 0.52 ma 5 Includes package Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 2 CGHV40030 Rev 1.1

3 Typical Performance Figure 1. - Typical Small Signal Response of CGHV40030-AMP Application Circuit V DD = 150 ma Ga ain, Return Loss(dB) S11 S21 S Frequency (GHz) Figure 2. - Typical Large Signal Response of CGHV40030-AMP Application Circuit V DD = 150 ma, P IN = 29 dbm, T CASE = 25 C, CW Drain Efficiency Outpu Power (dbm) Output Power Drain Efficiency (%) 44.0 Output Power Drain Efficiency Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 3 CGHV40030 Rev 1.1

4 CGHV40030-AMP Application Circuit Bill of Materials CGHV40030-AMP Application Circuit Designator Description Qty R1 RES,1/16W,0603,1%,187 OHMS 1 R2 RES, 2.2 OHMS, +/- 1%, 1/16W, R3 RES,1/16W,0603,1%,15.4 OHMS 1 L1 IND, 5.6nH, C3, C4 CAP, 2.7,+/-0.1pF, 0603, ATC 2 C11, C12 CAP, 1.2pF,+/-0.1pF, 0603, ATC 2 C5, C6 CAP, 0.8pF,+/-0.1pF, 0603, ATC 2 C2, C7, C8 CAP 1.8pF,+/-0.05pF 0603, ATC 3 C9, C10 CAP, 3.9pF,+/-0.1pF 0603, ATC 2 C1, C13 CAP, 24pF,+/-5% 0603, ATC 2 C14 CAP 10UF 16V TANTALUM 1 C15, C20 CAP, 33000pF, 0805, ATC 2 C16,C21 CAP, 470PF, 5%, 100V, 0603, 2 C17 CAP, 68pF,+/-0.1pF 0603, ATC 1 C22 CAP, 56PF +/- 5%, 0603, ATC600S 1 C18 CAP, 33UF, 20%, G CASE 1 C19 CAP, 1.0UF, 100V, 10%, X7R, J1,J2 CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST J3 HEADER RT>PLZ.1CEN LK 5POS 1 BASEPLATE, CGH35015, 2.60 X CGHV40030F/P PCB, RO4350, THK SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 2 Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 4 CGHV40030 Rev 1.1

5 Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load j j j j j j j j j j1.7 Note 1 : V DD = 150 ma Note 2 : Impedances are extracted from source and load pull data derived from the transistor. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 5 CGHV40030 Rev 1.1

6 Typical Package S-Parameters for CGHV40030 (Small Signal, V DS = 150 ma, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S MHz MHz MHz MHz MHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz GHz To download the s-parameters in s2p format, go to the CGHV40030 Product Page and click on the documentation tab. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 6 CGHV40030 Rev 1.1

7 CGHV40030-AMP Application Circuit Schematic CGHV40030-AMP Application Circuit Outline Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 7 CGHV40030 Rev 1.1

8 Product Dimensions CGHV40030F (Package Type ) Product Dimensions CGHV40030P (Package Type ) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 8 CGHV40030 Rev 1.1

9 Part Number System CGHV40030F/P Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Value Units Upper Frequency 1 6 GHz Power Output 30 W Package Flanged/Pill - Table 1. Note 1 : Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 9 CGHV40030 Rev 1.1

10 Product Ordering Information Order Number Description Unit of Measure Image CGHV40030F GaN HEMT Each CGHV40030P GaN HEMT Each CGHV40030-TB Test board without GaN HEMT Each CGHV40030F-AMP Test board with GaN HEMT installed Each Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 10 CGHV40030 Rev 1.1

11 Disclaimer Specifications are subject to change without notice. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Sarah Miller Marketing Cree, RF Components Ryan Baker Marketing & Sales Cree, RF Components Tom Dekker Sales Director Cree, RF Components Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of 11 CGHV40030 Rev 1.1

12 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: : CGHV40030F CGHV40030-TB

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