Drain Efficiency (%) b092707fh-gr1a. Characteristic Symbol Min Typ Max Unit
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1 b9277fh-gr1a PTFB9277FH Thermally-Enhanced High Power RF LDMOS FET 27 W, 28 V, MHz Description The PTFB9277FH is a 27-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 96 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB9277FH Package H-37288L-4/2 (db) V DD = 28 V, I DQ = ma, ƒ = 925 MHz, MHz carrier spacing, 3.84 MHz BW Drain (%) Features Broadband internal input and output matching Typical pulsed CW performance ( µs pulse width%, duty cycle, class AB), 96 MHz, 28 V - Output power at P 1dB = 2 W - = 52% - =.5 db Typical single-carrier WCDMA performance, 96 MHz, 28 V, 7.5 db CCDF, - Output power = 63 W - = 33% - =.5 db - ACPR = MHz Capable of handling :1 V, 2 W (CW) output power Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant RF Characteristics Two-carrier WCDMA Specifications (tested in Wolfspeed test fixture) V DD = 28 V, I DQ = ma, P OUT = 6 W avg, ƒ = 96 MHz, 3GPP signal, 3.84 MHz channel bandwidth, 8 db CCDF, MHz spacing Characteristic Symbol Min Typ Max Unit G ps db Drain h D % Intermodulation Distortion IMD dbc All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Rev. 4, Silicon Drive Durham, NC
2 PTFB9277FH 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = V, I DS = ma V( BR)DSS 65 V Drain Leakage Current V DS = 28 V, V GS = V I DSS 1 µa V DS = 63 V, V GS = V I DSS µa Gate Leakage Current V GS = V, V DS = V I GSS 1 µa On-State Resistance V GS = V, V DS =.1 V R DS(on).5 W Operating Gate Voltage V DS = 28 V, I DQ = ma V GS V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS 6 to + V Junction Temperature T J C Storage Temperature Range T STG to +1 C Thermal Resistance (T CASE = 7 C, 2 W CW) R qjc.4 C/W Ordering Information Type and Version Order Code Package and Description Shipping PTFB9277FH V1 R PTFB9277FH-V1-R H-37288L-4/2, earless flange Tape & Reel, pcs PTFB9277FH V1 R2 PTFB9277FH-V1-R2 H-37288L-4/2, earless flange Tape & Reel, 2 pcs Rev. 4, Silicon Drive Durham, NC
3 b9277fh-gr1c b9277fh-gr2b PTFB9277FH 3 Typical Performance (data taken in an Wolfspeed test fixture) V DD = 28 V, I DQ = ma, ƒ = 9 MHz, MHz carrier spacing, 3.84 MHz BW V DD = 28 V, I DQ = ma, ƒ = 96 MHz, MHz carrier spacing, 3.84 MHz BW (db) Drain (%) (db) Drain (%) b9277fh-gr1b IMD & ACPR (dbc) V DD = 28 V, I DQ = ma, ƒ = 925 MHz MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) IMD & ACPR (dbc) V DD = 28 V, I DQ = ma, ƒ = 9 MHz MHz carrier spacing, 3.84 MHz BW IMD Low IMD Up ACPR Drain (%) -6-6 b9277fh-gr2a Rev. 4, Silicon Drive Durham, NC
4 b9277fh-gr2c b9277fh-gr4 b9277fh-gr3 b9277fh-gr5a PTFB9277FH 4 Typical Performance (cont.) V DD = 28 V, I DQ = ma, ƒ = 96 MHz MHz carrier spacing, 3.84 MHz BW V DD = 28 V, I DQ = ma MHz carrier spacing, 3.84 MHz BW IMD & ACPR (dbc) IMD Low IMD Up ACPR Drain (%) IMD (dbc) MHz 9 MHz 96 MHz IMD Up IMD Low CW Performance V DD = 28 V, I DQ = ma CW Performance at selected V DD I DQ = ma, ƒ = 925 MHz 6 6 (db) 925 MHz 9 MHz 96 MHz (%) Power (db) V DD = 24 V V DD = 28 V V DD = 32 V (%) Rev. 4, Silicon Drive Durham, NC
5 b9277fh-gr5b b9277fh-gr6 b9277fh-gr5c PTFB9277FH 5 Typical Performance (cont.) CW Performance at selected V DD I DQ = ma, ƒ = 9 MHz CW Performance at selected V DD I DQ = ma, ƒ = 96 MHz 6 6 Power (db) V DD = 24 V V DD = 28 V V DD = 32 V (%) Power (db) V DD = 24 V V DD = 28 V V DD = 32 V (%) Small Signal CW Performance V DD = 28 V, I DQ = ma -5 Power (db) IRL Input Return Loss (db) Frequency (MHz) Rev. 4, Silicon Drive Durham, NC
6 PTFB9277FH 6 Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jx R jx Z Source D Z Load G S Load Pull Performance Pulsed CW signal: µsec, % duty cycle, 28 V, 2. A Class AB Max Output Power Max PAE Freq [MHz] Zs [W] Zl [W] [db] P OUT [dbm] P OUT [W] PAE [%] P 1dB Zl [W] [db] P OUT [dbm] j j j j j j j j j P OUT [W] PAE [%] Reference Circuit, tuned for MHz DUT PTFB9277FH V1 Reference Circuit Part No. LTN/PTFB9277FH V1 PCB Rogers 43,.8 mm [."] thick, 2 oz. copper, ε r = 3.66 Find Gerber files for this reference fixture on the Wolfspeed Web site ( Rev. 4, Silicon Drive Durham, NC
7 b f h _ c d_ PTFB9277FH 7 Reference Circuit (cont.) RO43,. (62) C83 C82 RO43,. (62) C4 C5 C2 R2 R81 C81 R3 R83 S3 S2 R84 C85 S1 R85 C84 C3 C4 C5 C9 C2 C1 VDD C1 R1 R82 C2 RF_IN C7 RF_OUT C6 C1 C3 C1 C9 C8 C7 C5 C8 C2 C2 C6 C4 C2 C3 C6 VDD PTFB9277FH/1_IN_1A PTFB9277FH/1_OUT_1A Reference circuit assembly diagram (not to scale) Assembly Information Component Description Suggested Manufacturer P/N Input C1 Chip capacitor, 1 pf ATC ATCB1RCWXB C2 Chip capacitor,.2 µf ATC ATCB3MWX C3 Chip capacitor, 4.7 pf ATC ATCB4R7CWXB C4 Chip capacitor, 33 pf ATC ATCB3JW C5 Capacitor 4.7 µf Nichicon F931C475MAA C6, C8 Chip capacitor, 56 pf ATC ATCB56JT C7 Chip capacitor, 12 pf ATC ATCB1JW C9 Chip capacitor, 4.7 pf ATC ATCB4R7CT C1 Chip capacitor,.1 µf ATC ATCB3MWX C81, C84 Chip capacitor,.1 µf Panasonic Electronic Components ECJ-3VB1H4K C82, C83, C85 Chip capacitor,.1 µf Panasonic ECJ-1VB1H2K R1, R81, R83 Resistor, W Panasonic Electronic Components ERJ-8GEYJV R2, R3 Resistor, W Panasonic Electronic Components ERJ-8GEYJV R82 Resistor, 1k W Panasonic Electronic Components ERJ-8GEYJ2V R84 1.3k ohms Panasonic Electronic Components ERJ-3GEYJ132V R85 1.2k ohms Panasonic Electronic Components ERJ-3GEYJ122V (table cont. next page) Rev. 4, Silicon Drive Durham, NC
8 h L - 4 / 2 _ p d _ PTFB9277FH 8 Reference Circuit (cont.) Assembly Information (cont.) Component Description Suggested Manufacturer P/N S1 Transistor Fairchild Semiconductor BCP56- S2 Potentiometer, 2k W Bourns Inc. 3224W-1-2E S3 Voltage regulator Fairchild Semiconductor LM785 Output C1, C2 Chip capacitor, µf Matsuo 281M26K C2 Chip capacitor, 2.2 pf ATC ATCB2R2CW C3, C3 Ceramic capacitor, 1 µf, 2 V AVX Corporation 2225PC5KAT1A C4, C5, C4, C5 Capacitor, μf Taiyo Yuden UMK325C76MM-T C6 Chip capacitor, 4.2 pf ATC ATCB4R2CT C7 Chip capacitor, 56 pf ATC ATCB56JT C8 Chip capacitor, 3.3 pf ATC ATCB3R3CW C9, C6, C2, C2 Ceramic capacitor, 4.7 µf, V Murata Electronics North America GRM32ER71H475KA88L C2, C1 Capacitor, k pf ATC ATCB3MWX Pinout Diagram (top view) V D V Pin D G S (flange) V Description Drain Gate Source Supply voltage, V DD G S Lead connections for PTFB9277FH Rev. 4, Silicon Drive Durham, NC
9 H-37288L-4/2_po_1_ PTFB9277FH 9 Package Outline Specifications Package H-37288L-4/2 D 45 x 1.96 [.77] [.9] [1.] C L 4.3 [.158] 2X 1.2 [.] 4X 4.83±.51 [.±.] V D V 9.78 [.385] C L C L 2X 2. [.85] 2X 4.6 [.] 2X 5.46 [.5] 9. [.37] (.43 [.765]) 4X R [R ] C L G [ ] 1.57 [.62] SPH 2X.75 [.699] 22.35±. [.88±.8] LC 1.2 [.] S [.9] Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±.127 [.5]. 4. Pins: D drain, G gate, S (flange) source, V V DD. 5. Lead thickness:. +.51/.25 [.4 +.2/.1]. 6. Gold plating thickness: 1.14 ±.38 micron [45 ± 15 microinch]. Rev. 4, Silicon Drive Durham, NC
10 PTFB9277FH Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) Advance All New product, proposed only Advance All Package changed, revised all data Production All Production 2 Updated ordering code to R Production All Converted to Wolfspeed Data Sheet Data Sheet now represents production-released product specificaitons, including reference circuit and performance information For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 4,
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