= 25 C) Parameter 8.0 GHz 9.0 GHz 10.0 GHz 11.0 GHz Units Small Signal Gain db P OUT. = 25 dbm W Power P IN

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1 CMPA80B05D 5 W, GHz, GaN MMIC, Power Amplifier Cree s CMP80B05D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. Typical Performance Over GHz (T C = 5 C) Parameter 8.0 GHz 9.0 GHz 0.0 GHz.0 GHz Units Small Signal Gain db P P IN = 5 dbm W Power P IN = 5 dbm 0 0 db P IN = 5 dbm % Features Applications 8 db Small Signal Gain 35 W Typical P SAT Operation up to 8 V High Breakdown Voltage Point to Point Radio Communications Test Instrumentation EMC Amplifiers Rev.0 June 04 High Temperature Operation Size 0.4 x 0.88 x inches Subject to change without notice.

2 Absolute Maximum Ratings (not simultaneous) at 5 C Parameter Symbol Rating Units Conditions Drain-source Voltage V DSS 84 V DC 5 C Gate-source Voltage V GS -0, + V DC 5 C Storage Temperature T STG -55, +50 C Operating Junction Temperature T J 5 C Thermal Resistance, Junction to Case (packaged) R θjc. C/W Pulse Width = 00 µs, Duty Cycle = 0%, P DISS = 77 W Thermal Resistance, Junction to Case (packaged) R θjc.80 C/W CW, 85 C, P DISS = 77 W Mounting Temperature (30 seconds) T S 30 C P DISS = 77 W Note Eutectic die attach using 80/0 AuSn solder mounted to a 40 mil thick CPC carrier. Electrical Characteristics (Frequency = 8.0 GHz to.0 GHz unless otherwise stated; T C = 5 C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold Voltage V GS(TH) V V DS = 0 V, I D = 3. ma Gate Quiescent Voltage V GS(Q) -.7 V = 00 ma Saturated Drain Current I DS 9..9 A V DS = 6.0 V, V GS =.0 V Drain-Source Breakdown Voltage V BD V V GS = -8 V, I D = 3. ma RF Characteristics Small Signal Gain S 8 db = 00 ma Power Output P OUT.5 40 W = 5 dbm, Freq = 8 GHz Power Output P OUT W = 5 dbm, Freq = 0 GHz Power Output P OUT W = 5 dbm, Freq = GHz Power Added Efficiency PAE % = 5 dbm, Freq = 8 GHz Power Added Efficiency PAE 3 45 % = 5 dbm, Freq = 0 GHz Power Added Efficiency PAE % = 5 dbm, Freq = GHz Power Gain G P db = 5 dbm, Freq = 8 GHz Power Gain G P db = 5 dbm, Freq = 0 GHz Power Gain G P.40 0 db = 5 dbm, Freq = GHz Input Return Loss S 5 db = 00 ma Output Return Loss S db = 00 ma Output Mismatch Stress VSWR 5 : Y No damage at all phase angles, = 00 ma, P OUT = 5W CW Notes: Scaled from PCM data. All data pulse tested on-wafer with Pulse Width = 0 μs, Duty Cycle = 0.%. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their CMPA80B05D Rev.0

3 Die Dimensions (units in microns) Overall die size 4780 x 360 (+0/-50) microns, die thickness 00 (+/-0) micron. All Gate and Drain pads must be wire bonded for electrical connection. Pad Number Function Description Pad Size (microns) Note RF-IN RF-Input pad. Matched to 50 ohm. 50 x 50 4 VG_A Gate control for stage. V G ~ V. 00 x 00, 3 VG_B Gate control for stage. V G ~ V. 00 x 00, 4 VD_A Drain supply for stage. V D = 8 V. 00 x 00 5 VD_B Drain supply for stage. V D = 8 V. 00 x 00 6 VG_A Gate control for stage A. V G ~ V. 00 x 00,3 7 VG_B Gate control for stage A. V G ~ V. 00 x 00,3 8 VD_A Drain supply for stage A. V D = 8 V. 9 VD_B Drain supply for stage B. V D = 8 V. 0 RF-Out RF-Output pad. Matched to 50 ohm. 50 x 50 4 Notes: Attach bypass capacitor to pads -9 per application circuit. VG_A and VG_B are connected internally so it would be enough to connect either one for proper operation. 3 VG_A and VG_B are connected internally so it would be enough to connect either one for proper operation. 4 The RF Input and Output pad have a ground-signal-ground with a nominal pitch of mil (5 um). The RF ground pads are 00 x 00 microns. Die Assembly Notes: Recommended solder is AuSn (80/0) solder. Refer to Cree s website for the Eutectic Die Bond Procedure application note at Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. Use the die label (XX-YY) for correct orientation. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 3 CMPA80B05D Rev.0

4 Block Diagram Showing Additional Capacitors for Operation Over 8.0 to.0 GHz C C4 C0 Vd C9 C C3 Vg VG_B VD_B VG_B VD_B RF_In RF_Out VG_A VD_A VG_A VD_A C C5 C7 C6 C8 C Designator Description Quantity C,C,C3,C4,C5,C6,C7,C8 C9,C0,C,C CAP, 5pF, +/-0%, SINGLE LAYER, 0.035, Er 3300, 00V, Ni/ Au TERMINATION CAP, 680pF, +/-0%, SINGLE LAYER, 0.070, Er 3300, 00V, Ni/Au TERMINATION 8 4 Notes: The input, output and decoupling capacitors should be attached as close as possible to the die- typical distance is 5 to 0 mils with a maximum of 5 mils. The MMIC die and capacitors should be connected with mil gold bond wires. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 4 CMPA80B05D Rev.0

5 Typical Performance of the CMPA80B05D Small Signal Gain vs Frequency =. A Output Power & PAE vs Frequency =. A, P IN = 5 dbm S (db B) S S S (db) S (db), S Output Power (dbm), Pow wer Added Efficiency (%) Pout PAE P OUT PAE Frequency (GHz) Frequency (GHz) 30 Associated Gain vs Frequency =. A, P IN = 5 dbm DD DQ 5 ed Gain (db) Associate Frequency (GHz) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 5 CMPA80B05D Rev.0

6 Part Number System CMPA80B05D Package Power Output (W) Upper Frequency (GHz) Lower Frequency (GHz) Cree MMIC Power Amplifier Product Line Parameter Value Units Lower Frequency 8.0 GHz Upper Frequency.0 GHz Power Output 5 W Package Bare Die - Table. Note : Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table for value. Character Code Code Value A 0 B C D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: A = 0.0 GHz H = 7.0 GHz Table. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 6 CMPA80B05D Rev.0

7 Disclaimer Specifications are subject to change without notice. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of For more information, please contact: Sarah Miller Marketing & Export Cree, RF Components Ryan Baker Marketing Cree, RF Components Tom Dekker Sales Director Cree, RF Components Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 7 CMPA80B05D Rev.0