Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
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1 GTRA36282FC Thermally-Enhanced High Power RF GaN on SiC HEMT 28 W, 48 V, MHz Description The GTRA36282FC is a 28-watt ( ) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Peak/Average Ratio, (db) Single-carrier WCDMA Drive-up V DD = 48 V, I DQ(MAIN) = 14 ma, V GS(PEAK) = -5.5 V, ƒ = 36 MHz, 3GPP WCDMA signal, PAR = 1 db, 3.84 MHz BW Efficiency CCDF gtra36282fc_g1 53 Average Output Power (dbm) GTRA36282FC Package H-37248C-4 Features GaN on SiC HEMT technology Input matched Asymmetrical Doherty design - Main: = 12 W Typ - Peak: = 18 W Typ Typical Pulsed CW performance, MHz, 48 V, combined outputs, 1 µs pulse width, 1% duty cycle - Output power at = 28 W - Drain Efficiency = 6% - = 15 db Capable of handling 1:1 V, 44 W (CW) output power Human Body Model Class 1A (per ANSI/ESDA/ JEDEC JS-1) Low thermal resistance Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture) V DD = 48 V, I DQ = 14 ma, P OUT = 44 W avg, V GS(peak) = V DQ = 2 ma 2.2 V, ƒ = 36 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 1 CCDF Characteristic Symbol Min Typ Max Unit Linear G ps db Drain Efficiency h D % Adjacent Channel Power Ratio ACPR dbc Output CCDF OPAR db All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions!
2 GTRA36282FC 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage (main) V GS = 8 V, I D = 1 ma V (BR)DSS 15 V (peak) V GS = 8 V, I D = 1 ma V (BR)DSS 15 V Drain-source Leakage Current V GS = 8 V, V DS = 1 V I DSS 7 ma Gate Threshold Voltage (main) V DS = 48 V, I D = 14 ma V GS(th) V (peak) V DS = 48 V, I D = 2 ma V GS(th) V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage V DD 55 V Gate Quiescent Voltage V DS = 5 V, I D = 14 ma V GS(Q) 3 V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage V DSS 125 V Gate-source Voltage V GS 1 to +2 V Gate Current (main) I G 14.4 ma (peak) I G 21.6 ma Drain Current (main) I D 5.4 A (peak) I D 8.1 A Junction Temperature T J 225 C Storage Temperature Range T STG 65 to +15 C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD ) specified above. Thermal Chracteristics Parameter Symbol Value Unit Thermal Resistance (main, T CASE = 7 C, 67 W DC) R qjc 2.2 C/W (peak, T CASE = 7 C, 1 W DC) R qjc 1.5 C/W Ordering Information Type and Version Order Code Package Shipping GTRA36282FC V1 R GTRA36282FC-V1-R H-37248C-4, earless flange Tape & Reel, 5 pcs GTRA36282FC V1 R2 GTRA36282FC-V1-R2 H-37248C-4, earless flange Tape & Reel, 25 pcs
3 GTRA36282FC 3 Typical Performance (data taken in production test fixture) Single-carrier WCDMA Drive-up V DD = 48 V, I DQ(MAIN) = 14 ma, V GS(PEAK) = -5.5 V, ƒ = 36 MHz, 3GPP WCDMA signal, PAR = 1 db, BW = 3.84 MHz Single-carrier WCDMA Broadband Performance V DD = 48 V, I DQ(MAIN) = 14 ma, V GS(PEAK) = -5.5 V, P OUT = 46.4 dbm, 3GPP WCDMA signal, PAR = 1 db ACP Up & Low (dbc) ACPU ACPL 1 Efficiency -7 gtra36282fc_g Average Output Power (dbm) (db) 18 Efficiency gtra36282fc_g Frequency (MHz) ACPL & ACP Up (dbc) Single-carrier WCDMA Broadband Performance V DD = 48 V, I DQ(MAIN) = 14 ma, V GS(PEAK) = -5.5 V, P OUT = 46.4 dbm, 3GPP WCDMA signal, PAR = 1 db Return Loss (db) (db) CW Performance V DD = 48 V, I DQ(MAIN) = 14 ma, V GS(PEAK) = -5.5 V 34 MHz 35 MHz 36 MHz 34 MHz Eff 35 MHz Eff 36 MHz Eff ACPU ACPL -3 IRL Frequency (MHz) gtra36282fc_g4 gtra36282fc_g5 Output Power (dbm) 1
4 GTRA36282FC 4 Typical Performance (cont.) (db) CW Performance at various V DD I DQ(MAIN) = 14 ma, V GS(PEAK) = -5.5 V, ƒ = 36 MHz 44V 48V 52V 44V Eff 48V Eff 52V Eff (db) CW Performance Small Signal & Input Return Loss V DD = 48 V, I DQ(MAIN) = 14 ma, V GSPEAK = -5.5 V IRL Input Return Loss (db) gtra36282fc_g6 gtra36282fc_g Output Power (dbm) Frequency (MHz) Load Pull Performance Main Side Load Pull Performance Pulsed CW signal: 1 µs, 1% duty cycle, 48 V, I DQ = 2 ma, class AB Freq [MHz] Zs ZL Max Output Power [db] [dbm] hd [%] ZL Max Drain Efficiency [db] [dbm] 34 +j j j j j j j j j Peak Side Load Pull Performance Pulsed CW signal: 1 µs, 1% duty cycle, 48 V, I DQ = 14 ma,, class AB Freq [MHz] Zs ZL Max Output Power [db] [dbm] hd [%] ZL Max Drain Efficiency [db] [dbm] j j j j j j j j j hd [%] hd [%]
5 G TRA FC _ C D_ GTRA36282FC 5 Reference Circuit, MHz C25 V GS(MAIN) C C15 VDD C22 C17 C23 C24 C14 RO435, 2 MIL C21 R13 RF_OUT RF_IN C111 C112 R14 U1 C13 R11 C12 C11 C11 C19 C18 C26 C29 C27 C28 GTRA36282FC_OUT_3A RO435, 2 MIL R12 GTRA36282FC _IN_3A C21 V GS(PEAK) C1 C113 C211 C212 C213 VDD C115 C114 Reference circuit assembly diagram (not to scale)
6 H _pd_ GTRA36282FC 6 Reference Circuit (cont.) Reference Circuit Assembly DUT GTRA36282FC V1 Test Fixture Part No. LTA/GTRA36282FC V1 PCB Rogers 435,.58 mm [.2 ] thick, 2 oz. copper, ε r = 3.66, ƒ = MHz Find Gerber files for this test fixture on the Wolfspeed Web site at Components Information Component Description Manufacturer P/N Input C11 Capacitor, 1.3 pf ATC ATC8A1R3CT25T C12, C18 Capacitor,.5 pf ATC ATC8AR5CT25T C13, C14, C19, C112, C113 Capacitor, 12 pf ATC ATC8A12JT25T C15, C114 Capacitor, 1 µf TDK Corporation C4532X7R2A15M23KA C, C115 Capacitor, 1 V, 1 µf TDK Corporation C575X7S2AM23KB C17, C1 Capacitor, 1 µf Panasonic Electronic Components EEE-FP1V11AP C11 Capacitor,.3 pf ATC ATC8AR3CT25T C111 Capacitor,.2 pf ATC ATC8AR2CT25T R11, R12 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R13 Resistor, 1 ohms Panasonic Electronic Components ERJ-3GEYJ1V R14 Resistor, 5 ohms Richardson CA5Z4 U1 Hybrid coupler Anaren XC35P-3S Output C21, C28, C21 Capacitor, 12 pf ATC ATC8A12JT25T C22, C211 Capacitor, 1 µf TDK Corporation C4532X7R2A15M23KA C23, C24, C212, C213 Capacitor, 1 V, 1 µf TDK Corporation C575X7S2AM23KB C25 Capacitor, 22 µf Panasonic Electronic Components ECA-2AHG221 C26, C29 Capacitor,.4 pf ATC ATC8AR4CT25T C27 Capacitor, 15 pf ATC ATC8A15JT25T Pinout Diagram (top view) Main Peak S D1 D2 Pin D1 D2 G1 G2 S Description Drain Device 1 (Main) Drain Device 2 (Peak) Gate Device 1 (Main) Gate Device 2 (Peak) Source (flange) G1 G2
7 C6665-A4-C : h-37248c-4_po_ GTRA36282FC 7 Package Outline Specifications Package H-37248C-4 45 X 2.72 [.17] (8.89 [.35]) LC (5.8 [.2]) 4.83±.51 [.19±.2] D1 D [.385] C L (19.43 [.765]) R R G1 G [.15] 12.7 [.5] 3.78±.25 [.149±.1] 19.81±.2 [.78±.8] 1.2 [.4] SPH 1.57 [.62] S C L 2.57 [.81] Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M Primary dimensions are mm, alternate dimensions are inches 3. All tolerances ±.127 [.5] 4. Pins: D1, D2 drain, G1, G2 gate, S source (flange) 5. Lead thickness:.13 ±.5 [.5 ±.2] 6. Gold plating thickness: 1.14 ±.38 micron [45 ± 15 microinch]
8 Gtra36282fc 8 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) Advance All Data Sheet reflects advance specification for product development Advance All Revised Features and Target RF Characteristics Includes Package Advance All 2 Converted to Wolfspeed Data Sheet Updated DC Characteristics and max ratings table format Production All Data Sheet reflects released product specification Production 1 Added ESD rating For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 218 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc.
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More information= 25 C) Parameter 8.0 GHz 9.0 GHz 10.0 GHz 11.0 GHz Units Small Signal Gain db P OUT. = 25 dbm W Power P IN
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More information= 25 C), 50 V. Parameter 800 MHz 850 MHz 900 MHz 950 MHz 1000 MHz Units. Small Signal Gain db
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PTMA22M Wideband RF LDMOS Integrated Power Amplifier W, 28 V, 1800 20 MHz Description The PTMA22M is a wideband, matched, -watt, 2-stage LDMOS integrated amplifi er intended for wideband driver applications
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More informationPRELIMINARY. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain db
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More information= 25 C) Note: Measured in CGHV96100F2-TB (838179) under 100 µs pulse width, 10% duty, Pin 42.0 dbm (16 W) Applications. Marine Radar.
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More information= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
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More information= 25 C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Units Gain db W Power P OUT. = 43 dbm
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More information= 25 C) Note: Measured at -30 dbc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.
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CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency,
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3400-3600MHz, 40W, 28V RF LDMOS FETs Description The is a 40-watt, internally-matched LDMOS FETs, designed for cellular application with frequencies from 3400 to 3600MHz. It can biased at class AB or Class
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More information= 25 C), 50 V. Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units. Saturated Output Power W
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More information= 25 C) Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain db
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More informationPRELIMINARY = 25 C) Parameter GHz 14.0 GHz 14.5 GHz Units Small Signal Gain db P SAT. = 26 dbm W P 3dB
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