PTFB213004F. High Power RF LDMOS Field Effect Transistor 300 W, MHz. Description. Features. RF Characteristics

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High Power RF LDMOS Field Effect Transistor W, 7 MHz Description The is a -watt LDMOS FET designed for class AB operation in cellular amplifiers covering the to 7 MHz frequency band.

Package H-775-6/ Features ACP Up & Low (dbc) - - - - -5-6 Single-carrier WCDMA Drive-up V DD = V, I DQ =.4 A, ƒ = 7 MHz, GPP WCDMA signal, PAR = 7.5 db,.

1 High Power RF LDMOS Field Effect Transistor W, 7 MHz Description The is a -watt LDMOS FET designed for class AB operation in cellular amplifiers covering the to 7 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. Package H-775-6/ Features ACP Up & Low (dbc) Single-carrier WCDMA Drive-up V DD = V, I DQ =.4 A, ƒ = 7 MHz, GPP WCDMA signal, PAR = 7.5 db,.84 MHz bandwidth ACP low ACP up Drain (%) Broadband internal matching Enhanced for use in DPD error correction systems Wide video bandwidth Typical single-carrier WCDMA performance at 7 MHz, V - P OUT = 49.5 dbm Avg - Gain = 7.5 db - = % Increased negative gate-source voltage range for improved performance in Doherty amplifiers Capable of handling : V, W (CW) output power Excellent thermal stability Integrated ESD protection Pb-free and RoHS-compliant Output Power, avg. (dbm) RF Characteristics Two-carrier WCDMA Measurements (tested in Wolfspeed test fixture) V DD = V, I DQ =.4 A, P OUT = 6 W average, ƒ = 67.5 MHz, ƒ = 7.5 MHz, GPP signal, channel bandwidth =.84 MHz, PAR = 7.5 CCDF Characteristic Symbol Min Typ Max Unit Gain G ps 7 8 db Drain hd % Intermodulation Distortion IMD 6 dbc All published data at T CASE = 5 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Rev. 6, Silicon Drive Durham, NC 77

2 RF Characteristics (cont.) Two-tone Measurements (not subject to production test verified by design / characterization in Wolfspeed test fixture) V DD = V, I DQ =.4 A, P OUT = 5 W PEP, ƒ = MHz, tone spacing = MHz Characteristic Symbol Min Typ Max Unit Gain G ps 8 db Drain hd 7 % Intermodulation Distortion IMD dbc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = V, I DS = µa V (BR)DSS 65 V Drain Leakage Current V DS = V, V GS = V I DSS. µa V DS = 6 V, V GS = V I DSS. µa On-State Resistance V GS = V, V DS =. A R DS(on). W Operating Gate Voltage V DS = V, I DQ =.4 A V GS..8. V Gate Leakage Current V GS = V, V DS = V I GSS. µa Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS.5 to +65 V Gate-Source Voltage V GS 6 to + V Junction Temperature T J C Storage Temperature Range T STG to + C Thermal Resistance (T CASE = 7 C ) R qjc. C/W Ordering Information Type and Version Order Code Package Description Shipping V R -V-R H-775-6/, earless flange Tape & Reel, 5 pcs V R5 -V-R5 H-775-6/, earless flange Tape & Reel, 5 pcs Rev. 6, Silicon Drive Durham, NC 77

3 Typical Performance (data taken in a production test fixture) Two-carrier WCDMA Drive-up V DD = V, I DQ =.4 A, GPP WCDMA signal, PAR = 8 db, MHz carrier spacing,.84 MHz BW Two-carrier WCDMA Drive-up V DD = V, I DQ =.4 A, ƒ = 7 MHz, GPP WCDMA signal, PAR = 8 db, MHz carrier spacing,.85 MHz BW 9 Intermodulation Distortion (dbc) MHz MHz MHz IM Up IM Low Gain (db) Gain Drain (%) Output Power, Avg. (dbm) Output Power (dbm) Two-carrier WCDMA Drive-up V DD = V, I DQ =.4 A, ƒ = 7 MHz, GPP WCDMA signal, PAR = 8 db, MHz carrier spacing,.84 MHz BW Two-tone Broadband Performance V DD = V, I DQ =.4 A, P OUT = 6 W IMD (dbc), ACPR (dbc) IMD Low IMD Up ACPR Drain (%) Gain (db), (%) 5 Gain Return Loss IMD Return Loss (db), IMD (dbc) Output Power, avg. (dbm) 6 8 Frequency (MHz) Rev. 6, Silicon Drive Durham, NC 77

4 4 Typical Performance (cont.) Two-tone Drive-up V DD = V, I DQ =.4 A, ƒ = 7 MHz, ƒ = 69 MHz Gain & vs. Output Power V DD = V, I DQ =.4 A, ƒ = 7 MHz IMD (dbc) IMD Output Power, PEP (dbm) (%) Gain (db) Gain Output Power (dbm) 5 5 Drain (%) Two-tone Drive-up (over temp) (P OUT max rd order dbc) V DD = V, I DQ =.4 A, ƒ =.5 MHz, ƒ = 9.5 MHz Two-tone IMD vs. Output Power V DD = V, I DQ =.4 A, tone spacing = MHz Gain (db) C +85 C C Gain 6 5 Drain (%) IMD rd Order (dbc) MHz MHz MHz Output Power (dbm) Output Power, Avg. (dbm) Rev. 6, Silicon Drive Durham, NC 77

5 5 Typical Performance (cont.) Two-tone IMD vs. Output Power V DD = V, I DQ =.4 A, ƒ = 7 MHz, ƒ = 69 MHz Intermodulation Distortion vs. Tone Spacing V DD = V, I DQ =.4 A, ƒ = MHz, P OUT = 5 W (PEP) - - IMD (dbc) rd Order 5th 7th Output Power, Avg. (dbm) Intermodulation Distortion (dbc) IM IM5 IM Tone Spacing (MHz) Output PAR Compression (PARC), 7 MHz V DD = V, I DQ =.4 A, ƒ = 7 MHz, single-carrier GPP WCDMA signal, input PAR = 7.5 db,.84 MHz BW 6 Output PAR Compression (PARC), MHz V DD = V, I DQ =.4 A, ƒ = MHz, single-carrier GPP WCDMA signal, input PAR = 7.5 db,.84 MHz BW 6 PARC, PARC Gain (db) 5 Gain CCDF ACP (%) / ACP (dbc) PARC, PARC Gain (db) 5 Gain CCDF ACP (%) / ACP (dbc) Output Power, avg. (dbm) Output Power, avg. (dbm) Rev. 6, Silicon Drive Durham, NC 77

6 6 Typical Performance (cont.) PARC, PARC Gain (db) 5 Output PAR Compression (PARC), MHz V DD = V, I DQ =.4 A, ƒ = MHz, single-carrier GPP WCDMA signal, input PAR = 7.5 db,.84 MHz BW Gain CCDF ACP Output Power, avg. (dbm) (%) / ACP (dbc) Gain, PARC (db), (%) Single-carrier Broadband Performance V DD = V, I DQ =.4 A, P OUT = 89 W, single-carrier GPP WCDMA signal Gain PARC IRL 6 8 Frequency (MHz) ACP Return Loss (db)/acp (dbc) Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jx R jx WAVELENGTHS TOWA Z Source G G WAVELENGTHS TOWARD LOAD -. Z Load 8 MHz MHz D S D MHz 8 MHz Z Load Z = 5 Ω Z Source. Rev. 6, Silicon Drive Durham, NC 77

7 B C 4 S E 8 4 In NC Out NC b f 4_b d in _ Reference Circuit (cont.) C8 pf R8 Ohm S C8 pf R85 Ohm C8 pf S S R8 Ohm VGS TL R84 Ohm R8 Ohm TL47 TL4 TL TL R6 Ohm TL TL8 TL8 TL4 TL TL6 TL C pf TL9 C9 pf TL TL6 C.6 pf R4 Ohm TL4 TL6 C 47 pf TL69 TL7 TL TL C6 pf TL TL TL4 TL TL4 TL65 TL67 TL66 TL6 TL9 TL GATE DUT RF IN TL6 C4.7 pf TL7 TL8 C 8. pf TL8 TL6 TL5 TL9 TL48 TL7 C 47 pf TL8 TL9 C5 pf TL TL49 TL45 TL TL7 TL7 TL68 TL44 TL5 TL6 TL4 GATE DUT TL64 TL9 TL C pf C pf TL7 C4.6 pf TL6 R5 Ohm er =.48 H = mil RO/RO45 B TL TL4 TL TL46 TL R7 Ohm TL TL4 TL7 TL TL TL TL6 Reference circuit input schematic for ƒ = 7 MHz Rev. 6, Silicon Drive Durham, NC 77

8 4 4 b 4f_ b d o u t_ Reference Circuit (cont.) C4 pf TL4 TL8 TL4 TL4 TL TL4 TL VDD TL6 TL5 TL8 C4 pf TL9 C pf TL TL7 TL C5 pf DRAIN DUT VDD TL TL4 C. pf C9. pf TL6 TL C TL7 TL TL4 TL TL TL TL8 8. pf TL TL48 TL9 TL TL RF OUT TL5 TL TL47 VDD TL7 TL8 TL5 C6 pf C. pf C. pf C8.4 pf TL4 TL6 TL C7 pf C pf TL9 TL er =.48 H = mil RO/RO45 B TL7 TL44 TL46 C pf TL45 TL6 TL TL9 VDD Reference circuit output schematic for ƒ = 7 MHz Rev. 6, Silicon Drive Durham, NC 77

9 9 Reference Circuit (cont.) Description DUT LDMOS Transistor PCB LTN/PTFB4EF.58 mm [."] thick, er =.48 Rogers 45, oz. copper Electrical Characteristics at 7 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL.4 λ, 5.98 Ω W =.87, W =.87, W =.8 W = 4, W = 4, W = TL. λ, 8.85 Ω W =.5, L =.787 W =, L = TL.7 λ, 6.89 Ω W =.76, L = 7.56 W =, L = 69 TL.6 λ, 6.89 Ω W =.76, L =.58 W =, L = TL4.7 λ, 8. Ω W =.4, L = 5.59 W = 45, L = TL5, TL6.7 λ, 8. Ω W =.4, L =.7 W = 45, L = 5 TL7.5 λ,.6 Ω W =.9, L =. W = 85, L = 8 TL8. λ, Ω W =.68, L =.7 W = 46, L = 5 TL9, TL, TL, W =.5 W = TL TL, TL4 W =.6 W = TL, TL. λ, 4.75 Ω W =.54, L =.5 W = 6, L = TL6, TL.6 λ, 4.8 Ω W =., L =.7 W = 8, L = 5 TL7.6 λ, 7. Ω W = 4.86, L =.7 W = 9, L = 5 TL8.4 λ, 6.89 Ω W =.76, L =.48 W =, L = 7 TL9, TL6. λ, 4.75 Ω W =.54, L =.5 W = 6, L = TL, TL. λ, 54.7 Ω W =.6, L =.6 W =, L = 5 TL, TL. λ, 54.7 Ω W =.6, L =.65 W =, L = 65 TL, TL.7 λ, 54.7 Ω W =.6, L =.97 W =, L = 55 TL4, TL9. λ, 4.8 Ω W =., L =.5 W = 8, L = TL, TL8.9 λ, 54.7 Ω W =.6, L = 7.6 W =, L = TL6, TL7.9 λ, 54.7 Ω W =.6, L =.76 W =, L = TL.8 λ, 6.89 Ω W =.76, L =.54 W =, L = 6 TL4.6 λ, 6.89 Ω W =.76, L =.58 W =, L = TL7, TL8.4 λ, 54.7 Ω W =.6, W =.6, W =. W =, W =, W = 8 TL9, TL4.8 λ, 6.89 Ω W =.76, W =.76, W =.54 W =, W =, W = 6 TL, TL4. λ, 6.89 Ω W =.76, W =.76, W =.6 W =, W =, W = TL4 W =., W =.5, Offset =. W =, W = 9, Offset = TL44 W =.5, W =., Offset =. W = 5, W = 45, Offset = TL45 W =., W =.5, Offset =. W =, W = 9, Offset = TL46 W =., W =.76 W = 8, W = TL47 W =.5, W =.76 W =, W = TL48 W =.68, W =.9 W = 46, W = 85 TL49.9 λ, 8.85 Ω W =.5, L =.76 W =, L = TL, TL.6 λ, 7. Ω W = 4.86, L =.58 W = 9, L = table continued on page Rev. 6, Silicon Drive Durham, NC 77

10 Reference Circuit (cont.) Electrical Characteristics at 7 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Input TL.7 λ, 8. Ω W =.4, L = 5.59 W = 45, L = TL.8 λ, 6.89 Ω W =.76, L =.54 W =, L = 6 TL4.6 λ, 7. Ω W = 4.86, L =.7 W = 9, L = 5 TL5.6 λ, Ω W =.68, L = 5. W = 46, L = 98 TL6. λ, Ω W =.68, L =. W = 46, L = 8 TL7. λ, Ω W =.68, W =.68, W =.7 W = 46, W = 46, W = 5 TL8.7 λ, 8.85 Ω W =.5, W =.5, W =.9 W =, W =, W = 85 TL9, TL6. λ, 8. Ω W =.4, W =.4, W =.6 W = 45, W = 45, W = TL6, TL6.8 λ, 6.89 Ω W =.76, W =.76, W =.54 W =, W =, W = 6 TL6, TL64.4 λ, 6.89 Ω W =.76, L =. W =, L = TL65, TL7 W =., W =., Offset =.5 W =, W =, Offset = TL66 W =.5, W =., Offset =. W = 5, W = 45, Offset = TL67 W =., W =., W =. W =, W =, W = TL68. λ, 48. Ω W =., W =., W =. W =, W =, W = TL69. λ,.5 Ω W =.54, L =.5 W =, L = TL7. λ, 47. Ω W =.7, L =.5 W = 5, L = See next page for reference circuit output characteristics Rev. 6, Silicon Drive Durham, NC 77

11 Reference Circuit (cont.) Electrical Characteristics at 7 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics Output TL (taper).8 λ, 5. Ω / 9.59 Ω W = 7.56, W = 9.98, L =.97 W = 69, W = 7, L = 55 TL (taper).6 λ, 9.59 Ω / 4.7 Ω W = 9.98, W =.98, L =.7 W = 7, W = 78, L = 5 TL (taper).6 λ,.67 Ω / 5. Ω W = 6.65, W = 7.56, L =.956 W = 8, W = 69, L = 77 TL4 W = 5., W = 6.65 W =, W = 8 TL5, TL6, TL,. λ, 44.5 Ω W =.5, L =.5 W =, L = TL TL7.64 λ,.67 Ω W = 6.65, L = 4.8 W = 8, L = 89 TL8.5 λ, 4.7 Ω W =.98, L = 4. W = 78, L = 6 TL9.8 λ, 47. Ω W =.7, L =.7 W = 5, L = 9 TL.5 λ, 47. Ω W =.7, L = 4.94 W = 5, L = 7 TL.6 λ, 8.85 Ω W =.5, L =.7 W =, L = 5 TL4 W = 7.56, W =.5, W = 7.56, W = 69, W =, W = 69, W4 =.5 W4 = TL W = 9.98, W =.5, W = 9.98, W = 7, W =, W = 7, W4 =.5 W4 = TL6. λ,.9 Ω W =.8, W =.8, W =.778 W =, W =, W = 7 TL7, TL8.48 λ,.9 Ω W =.8, W =.8, W =.8 W =, W =, W = TL9, TL.7 λ,.9 Ω W =.8, L =.7 W =, L = 54 TL.8 λ,.9 Ω W =.8, L =.65 W =, L = 5 TL, TL5, TL8,. λ, 7.5 Ω W =.778, L =.5 W = 7, L = TL TL. λ,.9 Ω W =.8, L =.5 W =, L = TL4.8 λ,.9 Ω W =.8, L =.65 W =, L = 5 TL6.65 λ,.9 Ω W =.8, L =.6 W =, L = 56 TL7. λ,.9 Ω W =.8, L =.5 W =, L = TL9, TL. λ,.9 Ω W =.8, L =.5 W =, L = TL.4 λ, 47. Ω W =.7, W =.7, W =. W = 5, W = 5, W = 8 TL, TL4.48 λ,.9 Ω W =.8, W =.8, W =.8 W =, W = W = TL5, TL7, TL8. λ,.9 Ω W =.8, W =.8, W =.778 W =, W = W = 7 TL6, TL9.8 λ,.9 Ω W =.8, L =.97 W =, L = 55 TL.65 λ,.9 Ω W =.8, L =.6 W =, L = 56 TL4.6 λ,.9 Ω W =.8, L =.58 W =, L = TL4, TL45.6 λ,.9 Ω W =.8, W =.8, W =. W =, W =, W = 8 TL4, TL46, TL47. λ, 4.8 Ω W =., L =.5 W = 8, L = TL44.6 λ,.9 Ω W =.8, L =.58 W =, L = TL48 W =.5, W =.7 W =, W = 5 Rev. 6, Silicon Drive Durham, NC 77

12 b 4 f _ C D _ Reference Circuit (cont.) VDD RO45,. (6) RO45,. (6) R85 C8 C8 R8 C8 R84 C4 S VDD R8 R8 + R6 C9 C C S C S R4 C4 C5 C + µf C C6 C9 RF IN C4 C C5 C C C8 RF OUT C4 C C C R5 C C R7 C6 C7 µf + VDD C PTFB4_IN_ PTFB4_OUT_ Reference circuit assembly diagram (not to scale)* *Gerber Files for this circuit available on request Rev. 6, Silicon Drive Durham, NC 77

13 Reference Circuit (cont.) Circuit Assembly Information Component Description Suggested Manufacturer P/N Input C, C8, C Chip capacitor,. μf Digi-Key PCC4BTR-ND C, C Chip capacitor, 4.7 μf Digi-Key ND C Chip capacitor, 8. pf ATC ATCB8RBW5XB C4 Chip capacitor,.7 pf ATC ATCAR7BWXB C5, C6 Chip capacitor, pf ATC ATCBFW5XB C7 Capacitor, µf Digi-Key ND C9, C Chip capacitor, pf ATC ATCAFWXB C, C4 Chip capacitor,.6 pf ATC ATCBR6BW5XB C8, C8, C8 Chip capacitor, pf Digi-Key PCC77CT-ND R, R Resistor, W Digi-Key P.ECT-ND R, R6, R7, R8, Resistor, W Digi-Key PECT-ND R8 R4, R5 Resistor, W Digi-Key P.GCT-ND R8 Resistor, W Digi-Key P.KECT-ND R84 Resistor, W Digi-Key P.KGCT-ND R85 Resistor, W Digi-Key PECT-ND S Potentiometer, k W Digi-Key 4W-ECT-ND S Transistor Digi-Key BCP56 S Voltage Regulator Digi-Key LM785 Output C Chip capacitor, 8. pf ATC ATCB8RBW5XB C, C Capacitor, µf Digi-Key ND C4, C7 Chip capacitor, µf Digi-Key ND C5, C6 Chip capacitor,. µf Digi-Key ND C8 Chip capacitor,.4 pf ATC ATCBR4BW5XB C9, C, C, C Chip capacitor,. pf ATC ATCARBWXB C, C4 Capacitor, µf Digi-Key ND Rev. 6, Silicon Drive Durham, NC 77

14 h - 6 / _ B D - s _ Pinout Diagram V D D V S = flange Pin Description G, G Gate D, D Drain V, V V DD S Source (flange) G D D G G G See next page for package outline specifications Rev. 6, Silicon Drive Durham, NC 77

15 h _po 8-- Package Outline Specifications Package H-775-6/.75 [.5] X 45 X.9 [45 X.47].76 [.5] X. [.8] REF X.75 [.] X V D C L D V X.4 [.45].6±.58 [.7±.] 9.98 [.7] C L 9.44 [.6].6 [.] 6.6±.5 [.654±.] G 4X R [ R ] C L C L.4 [.84] SPH.66 [.64].4±.8 [.±.] C L 4X.684 [.46] G [ ].58 [.7] S Diagram Notes unless otherwise specified:. Interpret dimensions and tolerances per ASME Y4.5M Primary dimensions are mm. Alternate dimensions are inches.. All tolerances ±.7 [.5] unless specified otherwise. 4. Pins: G, G = gate; D, D = drain; S = source; V, V = V DD. 5. Lead thickness:.7 ±.5 [.5 ±.]. 6. Gold plating thickness:. ±.8 micron [45 ± microinch]. Rev. 6, Silicon Drive Durham, NC 77

16 PTFB8FA 6 Revision History Revision Date Data Sheet Type Page Subjects (major changes at each revision) Production Updated ordering information Production All Converted to Wolfspeed Data Sheet For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA 77 Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 8 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 6,

PTFB211503FL. Thermally-Enhanced High Power RF LDMOS FET 150 W, MHz. Description. Features. RF Characteristics

PTFB211503FL. Thermally-Enhanced High Power RF LDMOS FET 150 W, MHz. Description. Features. RF Characteristics PTFB50FL Thermally-Enhanced High Power RF LDMOS FET 50 W, 0 70 MHz Description The PTFB50FL is a thermally-enhanced, 50-watt, LDMOS FET designed for cellular power amplifier applications in the 0 to 70