PTFB193404F. Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, MHz. Description. Features. RF Characteristics

Transcription

1 PTFB9404F Thermally-Enhanced High Power RF LDMOS FET 40 W, 0 V, MHz Description The PTFB9404F is a 40 watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 90 to 990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB9404F Package H-775-6/ IMD, ACPR (dbc) Two-carrier WCDMA GPP Drive-up V DD = 0 V, I DQ =.6 A, ƒ = 990 MHz, GPP WCDMA signal, PAR = 8 db, 0 MHz carrier spacing, BW =.84 MHz IMD Low IMD Up ACPR Drain (%) Features Broadband internal matching Wide video bandwidth Typical single-carrier WCDMA performance, 990 MHz, 0 V - Output power = 00 W - = % - = 9 db - PAR = % CCDF - 5 MHz = 5 dbc Increased negative gate-source voltage range for improved performance in Doherty amplifiers Capable of handling 0: 0 V, 40 W (CW) output power Integrated ESD protection Excellent thermal stability Pb-free and RoHS compliant Average Output Power (dbm) RF Characteristics Single-carrier WCDMA Measurements (tested in Wolfspeed test fixture) V DD = 0 V, I DQ =.6 A, P OUT = 80 W average, ƒ = 990 MHz, GPP signal, channel bandwidth =.84 MHz, peak/average = % CCDF Characteristic Symbol Min Typ Max Unit G ps db Drain η D 9 % Adjacent Channel Power Ratio ACPR dbc All published data at T CASE = 5 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Rev. 06, Silicon Drive Durham, NC 770

2 PTFB9404F RF Characteristics (cont.) Two-carrier WCDMA Characteristics (not subject to production test verified by design/characterization in Wolfspeed test fixture) V DD = 0 V, I DQ =.6 A, P OUT = 80 W average, ƒ = 980 MHz, ƒ = 990 MHz, GPP signal, channel bandwidth =.84 MHz, peak/average = % CCDF Characteristic Symbol Min Typ Max Unit G ps 9 db Drain η D 9 % Intermodulation Distortion IMD dbc Two-tone Characteristics (not subject to production test verified by design/characterization in Wolfspeed test fixture) V DD = 0 V, I DQ =.6 A, P OUT = 65 W PEP, ƒ = 990 MHz, tone spacing = MHz Characteristic Symbol Min Typ Max Unit G ps 9 db Drain η D 6 % Intermodulation Distortion IMD 0 dbc DC Characteristics (both sides) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, I DS = 0 ma V (BR)DSS 65 V Drain Leakage Current V DS = 8 V, V GS = 0 V I DSS.0 µa V DS = 6 V, V GS = 0 V I DSS 0.0 µa On-State Resistance V GS = 0 V, V DS = 0. V R DS(on) 0.05 Ω Operating Gate Voltage V DS = 0 V, I DQ =.6 A V GS..8. V Gate Leakage Current V GS = 0 V, V DS = 0 V I GSS.0 µa Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS 6 to +0 V Junction Temperature T J 00 C Storage Temperature Range T STG 40 to +50 C Thermal Resistance (T CASE = 70 C) R θjc 0. C/W Rev. 06, Silicon Drive Durham, NC 770

3 PTFB9404F Ordering Information Type and Version Order Code Package Description Shipping PTFB9404F V R0 PTFB9404F-V-R0 H-775-6/, earless flange Tape & reel, 50 pcs PTFB9404F V R50 PTFB9404F-V-R50 H-775-6/, earless flange Tape & reel, 50 pcs Typical Performance (data taken in production test fixture) Two-carrier WCDMA GPP Drive-up V DD = 0 V, I DQ =.6 A, GPP WCDMA, PAR = 8 db, 0 MHz carrier spacing, BW =.84 MHz Two-carrier WCDMA GPP Drive-up V DD = 0 V, I DQ =.6 A, ƒ = 990 MHz, GPP WCDMA signal, PAR = 8 db, 0 MHz carrier spacing, BW =.84 MHz D (dbc) IM IM Low IM Up (db) ficiency (%) Eff Average Output Power (dbm) Average Output Power (dbm) 0 Rev. 06, Silicon Drive Durham, NC 770

4 PTFB9404F 4 Typical Performance (cont.) Two-tone Broadband Performance V DD = 0 V, I DQ =.6 A, P OUT = 5 dbm Two-tone Drive-up V DD = 0 V, I DQ =.6 A,, ƒ = 989 MHz, ƒ = 990 MHz (db B) / (%) Return Loss IMD Frequency (MHz) Return Lo oss (db) / IMD (dbc) IMD (dbc) -5-5 rd Order IMD Output Power, PEP. (dbm) Effic ciency (%) Two-tone Drive-up V DD = 0 V, I DQ =.6 A, ƒ = 989 MHz, ƒ = 990 MHz Two-tone Drive-up (over temperature) (P OUT -max rd order 0 dbc) V DD = 0 V, I DQ =.6 A, ƒ = 959 MHz, ƒ = 960 MHz ain (db) G Output Power, PEP (dbm) ency (%) Effici (db) Output Power, PEP (dbm) +5C +85C 0C ciency (%) Effi Rev. 06, Silicon Drive Durham, NC 770

5 PTFB9404F 5 Typical Performance (cont.) Two-tone Drive-up at Selected Frequencies V DD = 0 V, I DQ =.6 A, tone spacing = MHz Intermodulation Distortion vs. Output Power V DD = 0 V, I DQ =.6 A, ƒ = 989 MHz, ƒ = 990 MHz IMD rd Order (dbc) MHz 960 MHz 90 MHz IM MD (dbc) rd Order 5th 7th Output Power, PEP (dbm) Output Power, PEP (dbm) Intermodulation Distortion vs. Tone Spacing V DD = 0 V, I DQ =.6 A, ƒ = 90 MHz, P OUT = 7 W (PEP) Single-carrier WCDMA Drive-up V DD = 0 V, I DQ =.6 A, ƒ = 990 MHz, GPP WCDMA signal, TM w/6 DPCH, 4% clipping, PAR = 7.5 db,.84 MHz BW IM MD (dbc) IMD IMD5 IMD7 IMD Lower IMD Upper 0 00 Adjacent Chan nnel Power Ratio (db) ACPR Up ACPR Low Drain (%) Two Tone Spacing (MHz) Average Output Power (dbm) Rev. 06, Silicon Drive Durham, NC 770

6 PTFB9404F 6 Typical Performance (cont.) / PARC (db) PARC (db) Single-carrier WCDMA Drive-up V DD = 0 V, I DQ =.6 A, ƒ = 990 MHz, GPP WCDMA signal, PAR = 7.5 db, BW =.84 MHz CCDF ACP Average Output Power (dbm) (%) / ACP (dbc) ( / PARC (db) PARC (db) Single-carrier WCDMA Drive-up V DD = 0 V, I DQ =.6 A, ƒ = 960 MHz, GPP WCDMA signal, PAR = 7.5 db, BW =.84 MHz CCDF ACP Average Output Power (dbm) (%) / ACP (dbc) Single-carrier WCDMA Drive-up V DD = 0 V, I DQ =.6 A, ƒ = 90 MHz, GPP WCDMA signal, PAR = 7.5 db, BW =.84 MHz Single-carrier WCDMA Broadband V DD = 0 V, I DQ =.6 A, P OUT = 5 W, GPP WCDMA signal PARC (db B) / PARC (db) CCDF ACP Average Output Power (dbm) (%) / ACP (dbc), PARC (d db) / (%) 5 IRL 5 5 CCDF 5 ACP Frequency (MHz) Return Los ss (db) / ACP (dbc) Rev. 06, Silicon Drive Durham, NC 770

7 P P - F E T c o m p l e _ t e PTFB9404F 7 Broadband Circuit Impedance (measurements taken on full part, both sides) Frequency Z Source Ω Z Load Ω MHz R jx R jx D Z Source G G S Z Load D See next page for circuit information Rev. 06, Silicon Drive Durham, NC 770

8 PTFB9404F 8 Reference Circuit C pf S C pf 8 7 R80 00 Ohm 6 R80 0 Ohm S R80 00 Ohm 4 5 S C 4 S E B R Ohm C pf C pf TL0 TL0 TL6 C0 TL7 TL TL pf TL9 4 L0 nh R0 TL0 0 Ohm TL04 TL05 Gate DUT (Pin G) C pf C07.5 pf C06 8 pf TL07 PORT RF_IN εr =.48 H = 0 mil RO/RO450 B TL0 C pf TL TL4 TL TL0 TL09 TL08 C05 8 pf TL06 C0 L0 R04 TL pf TL nh TL 0 Ohm TL4 TL5 b F - v _ B D o ut _ Gate DUT (Pin G) Reference circuit input schematic for ƒ = 990 MHz Rev. 06, Silicon Drive Durham, NC 770

9 b F - v _ B D o u t _ PTFB9404F 9 Reference Circuit (cont.) C pf TL5 Drain V DD (Pin V) Drain DUT (Pin D) Drain DUT (Pin D) TL0 TL09 C pf TL7 TL05 TL4 C05 8 pf C04 8 pf C pf TL07 TL TL06 C pf TL TL C0 0.8 pf TL0 TL6 TL04 C pf TL0 TL TL08 TL0 TL0 TL DCVS V DD V RF_OUT PORT TL6 Drain V DD (Pin V) C pf C pf TL7 C pf TL5 C pf TL4 TL9 C pf TL TL8 VDD DCVS V εr =.48 H = 0 mil RO/RO450 B Reference circuit output schematic for ƒ = 990 MHz Reference Circuit Assembly DUT PTFB9404F Test Fixture Part No. LTN/PTFB9404EF PCB Rogers RO450, mm [0.00 ] thick, oz. copper, ε r =.48 Find Gerber files for this test fixture on the Wolfspeed Web site at Transmission Electrical Dimensions: W, L (mm) Dimensions: W, L (mils) Line Characteristics Input TL λ, 47. Ω W =.70, W =.70, W =.54 W = 50, W = 50, W = 60 TL λ, 47. Ω W =.70, L =.55 W = 50, L = 40 TL0 0.0 λ, 47. Ω W =.70, L =.055 W = 50, L = 8 TL λ, 47. Ω W =.70, L =.68 W = 50, L = 46 TL05 0. λ, 7.9 Ω W =.700, L = 0.60 W = 500, L = 400 TL06 W = 0.00, W =.68, Offset = 5.89 W = 0, W = 46, Offset = TL07 W = 0.00, W =.68, Offset = 5.89 W = 0, W = 46, Offset = TL λ, 4.08 Ω W =.0, L = 0.65 W = 80, L = 5 TL λ, 4.08 Ω W =.0, W =.04 W = 80, W = 4 TL λ, 5.60 Ω W =.04, L = 5.09 W = 4, L = 98 TL 0.0 λ, 47. Ω W =.70, L =. W = 50, L = 8 TL 0.07 λ, 47. Ω W =.70, L =.54 W = 50, L = 60 TL 0.0 λ, 47. Ω W =.70, L =.055 W = 50, L = 8 table continued on next page Rev. 06, Silicon Drive Durham, NC 770

10 PTFB9404F 0 Reference Circuit (cont.) Transmission Electrical Dimensions: W, L (mm) Dimensions: W, L (mils) Line Characteristics Input (cont.) TL4 0.0 λ, 47. Ω W =.70, L =.68 W = 50, L = 46 TL5 0. λ, 7.9 Ω W =.700, L = 0.60 W = 500, L = 400 TL λ, 47. Ω W =.70, L = 6.70 W = 50, L = 4 TL7 0.0 λ, 47. Ω W =.70, L =.875 W = 50, L = TL λ, 47. Ω W =.70, L =. W = 50, L = 84 TL λ, 47. Ω W =.70, L =.54 W = 50, L = 60 TL λ, 5.60 Ω W =.04, L = 7.67 W = 4, L = 0 TL 0.04 λ, 5.60 Ω W =.04, W =.04, W =.7 W = 4, W = 4, W = 50 TL 0.04 λ, 47. Ω W =.70, W =.70, W =.70, W = 50, W = 50, W = 50, W4 =.70 W4 = 50 TL 0.0 λ, 47. Ω W =.70, L =.896 W = 50, L = 4 TL λ, 47. Ω W =.70, W =.70, W =.7 W = 50, W = 50, W = 50 Output TL0 W =.577, W =.046 W = 6, W = 4 TL0 W =.6, W =.577 W = 89, W = 6 TL λ,.48 Ω W =.6, W =.6, W = 0.76 W = 89, W = 89, W = 0 TL λ,.48 Ω W =.6, L =.99 W = 89, L = 484 TL05 W = 0.00, W =.5, Offset = 6. W =, W = 55, Offset = 45 TL06 W =.048, W =.6 W = 0, W = 89 TL λ, 5.04 Ω W =.048, L = 0.76 W = 0, L = 0 TL λ, Ω W =.577, L =.889 W = 6, L = 94 TL λ, 6.97 Ω W =.5, L =.5 W = 55, L = 55 TL λ, 6.97 Ω W =.5, L =.5 W = 55, L = 55 TL 0.5 λ, 5. Ω W =.046, L =.774 W = 4, L = 54 TL 0.0 λ,.48 Ω W =.6, L = 0.67 W = 89, L = 48 TL 0.04 λ, 9.85 Ω W = 4.064, W = 4.064, W =.0 W = 60, W = 60, W = 80 TL λ, 9.85 Ω W = 4.064, W = 4.064, W =.86 W = 60, W = 60, W = 90 TL λ, 9.85 Ω W = 4.064, W = 4.064, W =.86 W = 60, W = 60, W = 90 TL λ, 9.85 Ω W = 4.064, W = 4.064, W =.0 W = 60, W = 60, W = 80 TL λ, 9.85 Ω W = 4.064, W = 4.064, W =.86 W = 60, W = 60, W = 90 TL8 0.6 λ, 9.85 Ω W = 4.064, L = W = 60, L = 94 TL λ, 9.85 Ω W = 4.064, L = W = 60, L = 76 TL0 0.6 λ, 9.85 Ω W = 4.064, L = W = 60, L = 94 TL 0.04 λ, 9.85 Ω W = 4.064, W = 4.064, W =.0 W = 60, W = 60, W = 80 TL 0.06 λ, 9.85 Ω W = 4.064, W = 4.064, W =.86 W = 60, W = 60, W = 90 TL 0.06 λ, 9.85 Ω W = 4.064, W = 4.064, W =.86 W = 60, W = 60, W = 90 TL λ, 9.85 Ω W = 4.064, W = 4.064, W =.86 W = 60, W = 60, W = 90 TL λ, 9.85 Ω W = 4.064, W = 4.064, W =.0 W = 60, W = 60, W = 80 TL λ, 9.85 Ω W = 4.064, L = W = 60, L = 76 TL7 W = 0.00, W =.5, Offset = 6. W =, W = 55, Offset = 45 Rev. 06, Silicon Drive Durham, NC 770

11 b f - v _ C D _ PTFB9404F Reference Circuit (cont.) RO450,.00 (60) VDD C80 R80 R804 R80 C04 C80 S C C09 C C08 S + R80 S C0 VDD C0 L0 C80 RF_IN C04 C07 R0 C06 C05 C04 C05 C0 RF_OUT C0 L0 R04 C0 VDD C0 C0 C06 C C07 PTFB9404_IN_0 PTFB9404_OUT_0 RO450,.00 (6) Reference circuit assembly diagram (not to scale) Component ID Description Suggested Manufacturer P/N C0, C0 Chip capacitor, µf ATC NFM8PS05R0J0 C0, C04 Capacitor, 0 µf Digi-Key ND C05, C06, Capacitor, 8 pf ATC 800A80JT C04, C05 C07 Capacitor,.5 pf ATC 800AR5BT C80 Capacitor, µf Digi-Key ND C80, C804 Capacitor, 0 µf Digi-Key ND C80 Chip capacitor, 000 pf Digi-Key PCC77CT-ND L0, L0 Inductor, nh Digi-Key 0805W0JT R0, R0 Resistor, 000 Ω Digi-Key P.0KECT-ND R0, R04 Resistor, 0 Ω Digi-Key P0GTR-ND R80 Resistor, 00 Ω Digi-Key P00GTR-ND R80 Resistor, 00 Ω Digi-Key P.KGTR-ND R80 Resistor, 0 Ω Digi-Key P0GTR-ND R804 Resistor, 00 Ω Digi-Key P.KGTR-ND S Potentiometer Digi-Key 4W-0ECT-ND S Transistor Digi-Key BCP56-ND, BCP56 S Voltage regulator Digi-Key LM780L05ACM-ND, 7805 C0 Capacitor, 0.8 pf ATC 800A0R8BT C0, C0 Capacitor, 00 µf Digi-Key PCE444TR-ND C06, C07, Capacitor, 4.7 µf Digi-Key ND C08, C09 C0, C, Capacitor, 0 µf Digi-Key ND C, C Rev. 06, Silicon Drive Durham, NC 770

12 H G - 6 _ f l _ p d _ PTFB9404F Pinout Diagram Package H-775-6/ V D D V S (flange) Pin Description V V DD device V V DD device D Drain device D Drain device G Gate device G Gate device S Source (flange) G G See next page for package outline specifications Rev. 06, Silicon Drive Durham, NC 770

13 h _po_0_08--0 PTFB9404F Package Outline Specifications Package H-775-6/.750 [.50] X 45 X.9 [45 X.047].76 [.540] X.0 [.080] REF X.75 [.5] X 0 V D C L D V X.4 [.045].6±0.508 [.7±.00] 9.98 [.70] C L 9.44 [.60] 0.60 [.400] 6.6±.500 [.654±.00] G 4X R [ R ] C L C L.4 [.084] SPH.66 [0.064].4±0.80 [.0±.0] C L 4X.684 [.460] G [ ].58 [.70] S Diagram Notes unless otherwise specified:. Interpret dimensions and tolerances per ASME Y4.5M Primary dimensions are mm. Alternate dimensions are inches.. All tolerances ±0.7 [0.005] unless specified otherwise. Diagram Notes unless otherwise specified:. Interpret dimensions and tolerances per ASME Y4.5M Primary dimensions are mm. Alternate dimensions are inches.. All tolerances ± 0.7 [.005] unless specified otherwise. 4. Pins: D, D - drain, devices & ; G, G - gate, devices & ; V, V - V DD, devices & ; S - source (flange). 5. Lead thickness: 0.7 ±0.05 [.005 ±.00]. 6. Gold plating thickness:.4 ± 0.8 micron [45 ± 5 microinch]. Rev. 06, Silicon Drive Durham, NC 770

14 PTFB9404F 4 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) Advance Updated ordering information to include R Production All Converted to Wolfspeed Data Sheet For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 08 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 06,