Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
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- Rosalind Barrett
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1 Thermally-Enhanced High Power RF LDMOS FET 2 W, 48, MHz Description The PTA0827NF is a 2-watt LDMOS FET manufactured with Wolfspeed's 48- LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and input matching that allow for use from 746 MHz to 821 MHz. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTA0827NF Package PG-HBSOF-4-1 Peak/Average Ratio, (db) Single-carrier WCDMA Drive-up DD = 48, I DQ = 900 ma, ƒ = 755 MHz, 3GPP WCDMA signal, PAR = 10 db, 3.84 MHz BW 0.01% CCDF (%) Features Broadband internal input matching Typical CW performance, 755 MHz, 48 - Output power at = 225 W - Output power at = 250 W - =.5 db - = 43% Capable of handling 10:1 48, 80 W CW output power Integrated ESD protection Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant 0-60 ptva0827nf_g Average Output Power (dbm) RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) DD = 48, I DQ = 900 ma, P OUT = 80 W avg, ƒ = 755 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = % CCDF Characteristic Symbol Min Typ Max Unit Linear G ps db Drain h D % Adjacent Channel Power Ratio ACPR dbc All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Rev. 03,
2 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown oltage GS = 0, I DS = 10 ma (BR)DSS 105 Drain Leakage Current DS = 50, GS = 0 I DSS 1 µa DS = 105, GS = 0 I DSS 10 µa Gate Leakage Current GS = 10, DS = 0 I GSS 1 µa On-State Resistance GS = 10, DS = 0.1 R DS(on) 0.16 W Operating Gate oltage DS = 48, I DQ = 0.9 A GS Maximum Ratings Parameter Symbol alue Unit Drain-Source oltage DSS 105 Gate-Source oltage GS 6 to +12 Operating oltage DD 0 to +55 Junction Temperature T J 225 C Storage Temperature Range T STG 65 to +150 C Thermal Characteristics Parameter Symbol alue Unit Thermal Resistance (T CASE = 70 C, 2 W CW) R qjc 0.32 C/W Ordering Information Type and ersion Order Code Package Description Shipping PTA0827NF 1 R5 PTA0827NF-1-R5 PG-HBSOF-4-1, plastic package Tape & Reel, 500 pcs Rev. 03,
3 3 Typical RF Performance (data taken in production test fixture) Single-carrier WCDMA Drive-up DD = 48, I DQ = 900 ma, ƒ = 755 MHz, 3GPP WCDMA signal, PAR = 10 db, BW = 3.84 MHz Single-carrier WCDMA Broadband Performance DD = 48, I DQ = 900 ma, P OUT = dbm, 3GPP WCDMA signal, PAR = 10 db ACP Up & Low (dbc) ACPU ACPL (%) (db) (%) ptva0827nf_g Average Output Power (dbm) 16 ptva0827nf_g Frequency (MHz) Single-carrier WCDMA Broadband Performance DD = 48, I DQ = 900 ma, P OUT = dbm, 3GPP WCDMA signal, PAR = 10 db CW Performance DD = 48, I DQ = 900 ma ACPL & ACP Up (dbc) ACPU ACPL IRL Return Loss (db) (db) MHz 755MHz 750MHz (%) -35 ptva0827nf_g Frequency (MHz) 18 ptra093608pv_g Output Power (dbm) Rev. 03,
4 4 Typical RF Performance (cont.) CW Performance at various DD I DQ = 900 ma, ƒ = 755 MHz CW Performance Small Signal & Input Return Loss DD = 48, I DQ = 900 ma (db) (%) (db) IRL Input Return Loss (db) 18 0 ptva0827nf_g Output Power (dbm) ptva0827nf_g Frequency (MHz) Load Pull Performance Load Pull Performance Pulsed CW signal: 10 µs, 10% duty cycle, 48, I DQ = 480 ma Freq [MHz] Zs Zl Max Output Power [db] [dbm] PAE [%] Zl [db] Max PAE [dbm] j j j j j j Freq [MHz] Zs Zl Max Output Power [db] [dbm] PAE [%] Zl [db] Max PAE [dbm] j j j j j j PAE [%] PAE [%] Rev. 03,
5 5 Reference Circuit, MHz GS RO4350, MIL (272) RO4350, MIL (272) DD C101 C3 C105 C104 C7 C9 C211 C8 C210 C212 C1 R101 RF_IN C103 C6 RF_OUT C102 C5 C2 C214 C216 C218 C213 C215 C217 C4 DD PTA0827NF_IN PTA0827NF_OUT Reference circuit assembly diagram (not to scale) Rev. 03,
6 6 Reference Circuit (cont.) Reference Circuit Assembly DUT Test Fixture Part No. PCB PTA0827NF 1 LTN/PTA0827NF 1 Rogers 4350, mm [0.0 ] thick, 2 oz. copper, ε r = 3.66, ƒ = MHz Find Gerber files for this test fixture on the Wolfpseed Web site at Components Information Component Description Manufacturer P/N Input C101, C103 Capacitor, 56 pf ATC ATC100B560KW500XT C102 Capacitor, 10 pf ATC ATC100B100KW500XT C104, C105 Capacitor, 100, 10 µf TDK Corporation C5750X7S2A106M230KB R101 Resistor, 10 ohms Panasonic Electronic Components ERJ-8GEYJ100 Output C1, C2 Capacitor, 10 µf Taiyo Yuden UMK325C7106MM-T C3, C4, C6 Capacitor, 56 pf ATC ATC100B560KW500XT C5 Capacitor, 6.8 pf ATC ATC100B6R8CW500XB C7, C8, C9, C210, C211, C212, C213, 214, C215, C216, C217, C218 Capacitor, 100, 10 µf TDK Corporation C5750X7S2A106M230KB Pinout Diagram (top view) D G S Pin D G S Description Drain Gate Source (flange) Drain video decoupling (use only for decoupling), not for DC bias Rev. 03,
7 PG-HBSOF-4-1_part1_03_ PG-HBSOF-4-1_05_ PTA0827NF 7 Package Outline Specifications Package PG-HBSOF X X ± R1 D G ± R Y MAX Diagram Notes unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D = drain; G = gate; S = source; = Drain DD video decoupling (use only for decoupling), not for DC bias. Rev. 03,
8 PG-HBSOF-4-1_part2_03_ PG-HBSOF-4-1_05_ PTA0827NF 8 Package Outline Specifications Package PG-HBSOF-4-1 IEW Y D R0.4 S G Diagram Notes unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Gold plating thickness: 0.25 micron max. 12. Pins: D = drain; G = gate; S = source; = Drain DD video decoupling (use only for decoupling), not for DC bias. Rev. 03,
9 9 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) Advance All Data Sheet reflects advance specification for product development Production All Data Sheet reflects released product specification Production 2 Revised conditions in DC Characteristics table Production 1 Updated Features list Production 1 Revised typo in Features Production 2 Updated operating voltage and junction temperature Production 1, 9 Revised typo Production All 5, 6 Converted to Wolfspeed Data Sheet Revised reference circuit and component list For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 18 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 03,
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More information= 25 C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Units Gain db W Power P OUT. = 43 dbm
CMPA2560025D 25 W, 2.5-6.0 GHz, GaN MMIC, Power Amplifier Cree s CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN
More information= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA6D Watt, MHz - 6 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA6D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
More information= 25 C) Note: Measured in CGHV96100F2-TB (838179) under 100 µs pulse width, 10% duty, Pin 42.0 dbm (16 W) Applications. Marine Radar.
CGHV96100F2 100 W, 8.4-9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN
More information= 25 C), CW. Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain db P in. = 38 dbm
CGHV4PP W, 5 V, GaN HEMT Cree s CGHV4PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV4PP, operating from a 5 volt rail, offers a general purpose, broadband solution
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Rev. 1 18 January 8 Preliminary data sheet 1. Product profile 1.1 General description W LDMOS power transistor for base station applications at frequencies from 8 MHz to 1 MHz. Table 1. Typical performance
More informationtransistor is available in a flange and pill package. Package Types: & PN s: CGH40045F & CGH40045P
Rev 4.0 - May 2015 CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail,
More information= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W
CMPA0060002D 2 Watt, MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree s CMPA0060002D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
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More informationtransistor is available in a flange and pill package. Package Types: & PN s: CG2H40045P & CG2H40045F
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More information= 25 C) Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain db
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More information= 25 C) Parameter 5.5 GHz 6.5 GHz 7.5 GHz 8.5 GHz Units Small Signal Gain db P OUT
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More information= 25 C) Parameter 6.0 GHz 7.5 GHz 9.0 GHz 10.5 GHz 12.0 GHz Units Small Signal Gain db P OUT
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