Efficiency (%) c261402fc_gr1. Adjacent Channel Power Ratio ACPR dbc All published data at T CASE = 25 C unless otherwise indicated
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1 c26142fc_gr1 Thermally-Enhanced High Power RF LDMOS FET 14 W, 28 V, MHz Description The is a 14-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 26 to 269 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average (db), (db) Drive-up V DD = 28 V, I DQ = 9 ma, ƒ = 26 MHz, 3.84 MHz BW CCDF RF Characteristics Average Output Power (dbm) (%) Package H Features Broadband internal matching Wide video bandwidth Typical pulsed CW performance, 2655 MHz, 28 V (combined outputs) - Output power at P 1dB = 14 W - Effi ciency = 5% - =.5 db Typical single-carrier WCDMA performance, 2655 MHz, 28 V - Output power = 46 dbm avg - =.5 db - Effi ciency = 3.5% Capable of handling 1:1 28 V, 14 W (CW) output power Integrated ESD protection Human Body Model Class 1C (per ANSI/ESDA/ JEDEC JS-1) Low thermal resistance Pb-free and RoHS compliant Specifications (combined outputs, tested in Wolfspeed production test fi xture) V DD = 28 V, I DQ = 9 ma, P OUT = 28 W avg, ƒ = 2655 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 1 CCDF Characteristic Symbol Min Typ Max Unit G ps db Drain D % Adjacent Channel Power Ratio ACPR dbc All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Rev. 6, Silicon Drive Durham, NC
2 H _pd_ DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = V, I DS = 1 ma V (BR)DSS 65 V Drain Leakage Current V DS = 28 V, V GS = V I DSS 1 µa V DS = 63 V, V GS = V I DSS 1 µa Gate Leakage Current V GS = 1 V, V DS = V I GSS 1 µa On-State Resistance V GS = 1 V, V DS =.1 V R DS(on).1 Operating Gate Voltage V DS = 28 V, I DQ = 9 ma V GS 2.5 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 65 V Gate-Source Voltage V GS 6 to +1 V Operating Voltage V DD to +32 V Junction Temperature T J 225 C Storage Temperature Range T STG 65 to + C Thermal Resistance (T CASE = 7 C, 14 W CW) R JC.3 C/W Ordering Information Type and Version Order Code Package and Description Shipping V1 R -V1-R Thermally-enhanced earless fl ange, push-pull Tape & Reel, 5 pcs V1 R25 -V1-R25 Thermally-enhanced earless fl ange, push-pull Tape & Reel, 25 pcs Pinout Diagram S D1 D2 Pin Description D1, D2 Drain G1, G2 Gate S Source (fl ange) G1 G2 Lead connections for Rev. 6, Silicon Drive Durham, NC
3 c26142fc_gr5 c26142fc_gr3 c26142fc_gr8 3 Typical Performance (data taken in a production test fixture) Peak/Average (db), (db) Drive-up V DD = 28 V, I DQ = 9 ma, ƒ = 2655 MHz, 3.84 MHz BW CCDF Average Output Power (dbm) 6 4 (%) Peak/Average (db), (db) Drive-up V DD = 28 V, I DQ = 9 ma, ƒ = 269 MHz, 3.84 MHz BW CCDF c26142fc_g r2-6 Average Output Power (dbm) (%) ACPR (db) GPP Drive-up V DD = 28 V, I DQ = 9 ma,, 3.84 MHz BW 26 MHz 2655 MHz 269 MHz ACP Up ACP Low Average Output Power (dbm) Drain (%) (db) 14 V DD = 28 V, I DQ = 9 ma, P OUT = 5 dbm, Drain (%) Rev. 6, Silicon Drive Durham, NC
4 c26142fc_gr9 c26142fc_gr1 c26142fc_gr12 Typical Performance (cont.) ACP Up (dbc) V DD = 28 V, I DQ = 9 ma, P OUT = 5 dbm, ACP Up Return Loss Return Loss (db) (db) V DD = 28 V, I DQ = 9 ma, P OUT = 49 dbm, (%) V DD = 28 V, I DQ = 9 ma, P OUT = 49 dbm, V DD = 28 V, I DQ = 9 ma, P OUT = 48 dbm, 47 ACP Up (dbc) ACP Up Return Loss Return Loss (db) (db) (%) c26142fc_gr Rev. 6, Silicon Drive Durham, NC
5 c26142fc_gr13 c26142fc_gr14 c26142fc_gr 5 Typical Performance (cont.) ACP Up (dbc) V DD = 28 V, I DQ = 9 ma, P OUT = 48 dbm, ACP Up Return Loss Return Loss (db) (db) CW Performance V DD = 28 V, I DQ = 9 ma 26 MHz 2655 MHz 269 MHz Output Power (dbm) (%) CW Performance at selected V DD, (single side) I DQ = 9 ma, ƒ = 26 MHz CW Performance at selected V DD, (single side) I DQ = 9 ma, ƒ = 2655 MHz (db) V DD = 32 V V DD = 28 V V DD = 24 V (%) (db) V DD = 32 V V DD = 28 V V DD = 24 V (%) c26142fc_gr Output Power (dbm) Output Power (dbm) Rev. 6, Silicon Drive Durham, NC
6 c26142fc_gr Typical Performance (cont.) CW Performance at selected V DD, (single side) I DQ = 9 ma, ƒ = 269 MHz Small Signal CW & Input Return Loss, single side V DD = 28 V, I DQ = 9 ma (db) V DD = 32 V V DD = 28 V V DD = 24 V (%) (db) IRL c26142f c_gr -35 Input Return Loss (db) Output Power (dbm) Load Pull Performance Z Source D Z Load G G S D Single Side Load Pull Performance Pulsed CW signal: µsec, 1% duty cycle; 28 V, 45 ma Class AB Max Output Power Max PAE Freq [MHz] Zs Zl [db] P OUT [dbm] P 1dB P OUT [W] PAE % Zl [db] P OUT [dbm] P OUT [W] PAE % j1. 2. j j j.2 2. j j j j j Rev. 6, Silicon Drive Durham, NC
7 c26142fc_cd_ Reference Circuit DUT Test Fixture Part No. LTN/ PCB Rogers 435,.58 mm [."] thick, 2 oz. copper, r = 3.66 Find Gerber fi les for this test fi xture on the Wolfspeed Web site at ( C83 C82 R82 C81 R85 R435,. (6) VDD R435,. (6) S3 S5 C2 C3 R84 RF_IN R14 S4 R83 C12 S2 R13 L1 C11 C14 C9 C8 C5 C4 C7 VDD RF_OUT R13 L2 R11 C211 C212 VDD S6 C13 S1 C1 C84 C21 C8 PTFC26142_IN_1 PTFC26142_OUT_1 Reference circuit assembly diagram (not to scale) Rev. 6, Silicon Drive Durham, NC
8 Reference Circuit (cont.) Components Information Component Description Suggested Supplier P/N Input C11, C14 Chip capacitor, 1 pf ATC ATC8A1JT C12, C13 Capacitor, 1 µf Murata Electronics North America LLL31BC7GMA1L C81, C82, C83 Capacitor, 1 nf Panasonic ECJ-1VB1H12K L1, L2 Chip inductor, 47 nh Coilcraft 63HP-47NXJLU R11, R12 Resistor, 1 W Panasonic Electronic Components ERJ-3GEYJ1V R13, R14 Resistor, 1 W Panasonic Electronic Components ERJ-8GEYJ1V R81, R84 Resistor, 1k W Panasonic Electronic Components ERJ-8GEYJ12V R82 Resistor, 1.3k W Panasonic Electronic Components ERJ-3GEYJ132V R83 Resistor, 1.2k W Panasonic Electronic Components ERJ-3GEYJ122V S1, S2 High frequency EMI fi lter, 1 µf Murata Electronics North America NFMPSRJ3D S3 Potentiometer, 2k Bourns Inc. 3224W-1-2E S4 Voltage Regulator National Semiconductor LM785 S5 Transistor Infi neon Technologies BCP56 Output C1, C2, C3, C21 Capacitor, 1 µf Taiyo Yuden UMK325C7MM-T C4, C8 Electrolytic capacitor, 2 µf Panasonic Electronic Components EEE-FP1V221AP C5, C6 Chip capacitor, 1 pf ATC ATC8A1R2BT C6, C211 Chip capacitor, 2 pf ATC ATC8A1R6BT C7 Chip capacitor, 8 pf ATC ATC8A8R2CT C9, C212 Chip capacitor, 1 pf ATC ATC8A1JT Rev. 6, Silicon Drive Durham, NC
9 9 Package Outline Specifications Package H Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ±.127 [.5] unless specified otherwise. 4. Pins: D1, D2 drains; G1, G2 gates; S source. 5. Lead thickness: /.25 mm [.4+.3/.1 inch]. 6. Gold plating thickness: 1.14 ±.38 micron [45 ± microinch]. Rev. 6, Silicon Drive Durham, NC
10 1 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) Advance All Data Sheet refl ects advance specifi cation for product development Preliminary 1, 2 Specifi cations updated Advance All Reformat to Advance Specifi cation Marketing survey only Production All Data Sheet refl ects released product specifi cation Production 1 2 Added ESD rating Maximum junction temperature raised to 225 C, updated ordering info Production All Converted to Wolfspeed Data Sheet. For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 6,
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