Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
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1 Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, MHz Description The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Peak/Average Ratio, (db) Single-carrier WCDMA Drive-up V GS(PEAK) = 2.05 V, ƒ = 895 MHz, 3GPP WCDMA signal, PAR = 10 db, 3.84 MHz BW Efficiency 0.01% CCDF ptra094808nf_g Average Output Power (dbm) Efficiency (%) PTRA094808NF Package PG-HBSOF-6-2 Features Broadband internal input and output matching Asymmetrical design - Main: = 210 W Typ - Peak: = 340 W Typ Typical Pulsed CW performance, 896 MHz, 48 V, Doherty configuration - Output power at = 300 W Output power at = 4 W - Efficiency = 53% - = 17.5 db Capable of handling 10:1 48 V, 100 W (CW) output power Integrated ESD protection Human Body Model class 1C (per ANSI/ESDA/ JEDEC JS-001) Low thermal resistance Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture) V DD = 48 V, I DQ = 450 ma, V GS(PEAK) = 2.05 V, P OUT = 87 W avg, ƒ = 895 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = % CCDF Characteristic Symbol Min Typ Max Unit Linear G ps db Drain Efficiency h D % Adjacent Channel Power Ratio ACPR dbc Output PAR@0.01% CCDF OPAR db All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions!
2 2 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V GS = 0 V, I DS = 10 ma V (BR)DSS 105 V Drain Leakage Current V DS = 48 V, V GS = 0 V I DSS 1 µa V DS = 105 V, V GS = 0 V I DSS 10 µa Gate Leakage Current V GS = 14 V, V DS = 0 V I GSS 1 µa On-State Resistance (Main) V GS = 10 V, V DS = 0.1 V R DS(on) 0.08 W (Peak) V GS = 10 V, V DS = 0.1 V R DS(on) 0.05 W Operating Gate Voltage (Main) V DS = 48 V, I DQ = 0.45 A V GS V (Peak) V DS = 48 V, I DQ = 0 A V GS 2.05 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V DSS 105 V Gate-Source Voltage V GS 6 to +12 V Operating Voltage V DD 0 to +55 V Junction Temperature T J 225 C Storage Temperature Range T STG 65 to +150 C Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance (Main, T CASE = 70 C, 87.1 W CW) R qjc 0.51 C/W Ordering Information Type and Version Order Code Package Description Shipping PTRA094808NF V1 R5 PTRA094808NF-V1-R5 PG-HBSOF-6-2 Tape & Reel, 500 pcs
3 3 Typical RF Performance (data taken in production test fixture) -10 Single-carrier WCDMA Drive-up V GS(PEAK) = 2.05 V, ƒ = 895MHz, 3GPP WCDMA signal, PAR = 10 db, BW = 3.84 MHz Single-carrier WCDMA Broadband Performance V GS(PEAK) = 2.05 V, P OUT = 49.4 dbm, 3GPP WCDMA signal, PAR = 10 db 60 ACP Up & Low (dbc) ACPU ACPL 10 Efficiency -70 ptra094808nf_g Average Output Power (dbm) Efficiency (%) (db) Efficiency ptra094808nf_g Frequency (MHz) Efficiency (%) -10 Single-carrier WCDMA Broadband Performance V GS(PEAK) = 2.05 V, P OUT = 49.4 dbm, 3GPP WCDMA signal, PAR = 10 db CW Performance V GS(PEAK) = 2.05 V 60 ACPL & ACP Up (dbc) ACPU ACPL -30 IRL ptra094808nf_g Frequency (MHz) Return Loss (db) (db) Efficiency MHz MHz 895MHz 13 ptra094808nf_g Output Power (dbm) Efficiency (%)
4 4 Typical RF Performance (cont.) CW Performance at various V DD I DQ(MAIN) = 450 ma, V GS(PEAK) = 2.05 V, ƒ = 895 MHz CW Performance Small Signal & Input Return Loss V GS(PEAK) = 2.05 V (db) Efficiency 44V 48V 52V 12 ptra094808nf_g Output Power (dbm) Efficiency (%) (db) IRL ptra094808nf_g Frequency (MHz) Input Return Loss (db)
5 5 Load Pull Performance Main Side Load Pull Performance Pulsed CW signal: 10 µsec, 10% duty cycle, V DD = 48 V, I DQ = 350 ma, class AB Freq [MHz] Zs Max Output Power Max Drain Efficiency j j j j j j j j j Freq [MHz] Zs Max Output Power Max Drain Efficiency j j j Peak Side Load Pull Performance Pulsed CW signal: 10 µsec, 10% duty cycle, V DD = 48 V, V GS(PEAK) = 2 V, class C Freq [MHz] Zs Max Output Power Max Drain Efficiency j j j j j j j j Freq [MHz] Zs Max Output Power Max Drain Efficiency j j P3dB
6 6 Reference Circuit, MHz RO4360, 24 MIL PTRA094808NF_OUT_04 C107 R104 C106 C7 C6 C217 C9 RO4360, 24 MIL (285) VDD VGS (MAIN) C1 C8 C5 R103 C105 C104 C102 C101 R101 C2 C3 C4 RF_IN U1 C111 C103 RF_OUT C112 C110 C109 C108 C211 C212 VGS (PEAK) R102 C210 R105 C114 C113 C213 C214 C115 PTRA094808NF_IN_04 C215 C216 C218 VDD Reference circuit assembly diagram (not to scale) Pinout Diagram (top view) V1 Main D1 G1 Peak D2 G2 V2 S Pin D1 D2 G1 G2 S V1 V2 Description Drain Device 1 (Main) Drain Device 2 (Peak) Gate Device 1 (Main) Gate Device 2 (Peak) Source (flange) Drain video decoupling, no DC bias NC or connected to ground
7 7 Reference Circuit (cont.) Reference Circuit Assembly DUT Test Fixture Part No. PTRA094808NF V1 LTA/PTRA094808NF V1 PCB Rogers 4360, mm [0.024 ] thick, 2 oz. copper, ε r = 6.15 Find Gerber files for this test fixture on the Wolfspeed Web site at Components Information Component Description Manufacturer P/N Input C101 Capacitor, 6.8 pf ATC ATC600F6R8BT250T C102 Capacitor, 2.7 pf ATC ATC600F2R7BT250T C103, C105 Capacitor, 1.8 pf ATC ATC600F1R8BT250T C104, C111 Capacitor, 33 pf ATC ATC600F330JT250T C106, C113 Capacitor, 68 pf ATC ATC600F680JT250T C107, C114, C115 Capacitor, 10 µf Taiyo Yuden UMK325C7106MM-T C108 Capacitor, 8.2 pf ATC ATC100B8R2BT500XB C109 Capacitor, 2.0 pf ATC ATC600F2R0BT250T C110 Capacitor, 1.0 pf ATC ATC600F1R0BT250T C112 Capacitor, 3.3 pf ATC ATC600F3R3BT250T R101, R102 Resistor, 5.6 W Panasonic Electronic Components ERJ-8RQJ5R6V R103 Resistor, 50 W Anaren C16A50Z4 R104, R105 Resistor, 1,000 W Panasonic Electronic Components ERJ-8GEYJ102V U1 Hybrid coupler CEMAX CMX09Q02 Output C1, C210 Capacitor, 10 µf Taiyo Yuden UMK325C7106MM- C2 Capacitor, 10 pf ATC ATC600F100JT250T C3 Capacitor, 1.5 pf ATC ATC600F1R5CT250T C4 Capacitor, pf ATC ATC100B0JT500XB C5 Capacitor, 68 pf ATC ATC600F680JT250T C6, C7, C8, C9, C214, C215, C216, C217, C218 Capacitor, 10 µf, 100 V TDK Corporation C5750X7S2A106M230KB C211 Capacitor, 47 pf ATC ATC100B470JT500XB C212 Capacitor, 12 pf ATC ATC600F1JT250T C213 Capacitor, 47 pf ATC ATC600F470JT250T
8 PG-HBSOF-6-2_02.1_ PG-HBSOF-6-2_ PG-HBSOF-6-2_prelim_ PTRA094808NF 8 Package Outline Specifications Package PG-HBSOF ÊXÊ1.19 2x 2ÊXÊ8.92 2x 2ÊXÊ6.29 2x 2ÊXÊ1.52 2x 4ÊXÊ ÊXÊ1.61 2x 1.57Ê±Ê V1 V D1 D2 V V2 0.63ÊxÊ x x 45 2ÊXÊ1.00 2x G1 G Ê±Ê ÊXÊ ÊXÊ3.51 2x ÊXÊ x Y x X 7 2 2x X 10 2ÊXÊ10 Diagram Notes unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D1, D2 = drain; G1, G2 = gate; S = source, source; V1, = V2 drain = no video DC bias, NC or connect decoupling, to GRD no DC bias, V2 = NC or connected to ground
9 PG-HBSOF-6-2_02.1_ PTRA094808NF 9 Package Outline Specifications Package PG-HBSOF-6-2 (bottom view) 2x V2 D2 D1 V G2 G Diagram Notes unless otherwise specified: 1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included. 2. Metal protrusions are connected to source and shall not exceed 0.10 mm max. 3. Fillets and radii: all radii are 0.3 mm max. 4. Interpret dimensions and tolerances per ISO Dimensions are mm. 6. Does not include mold/dam bar and metal protrusion. 7. Exposed metal surface is tin-plated, may not be covered by mold compound. 8. All tolerances ± 0.1 mm unless specified otherwise. 9. All metal surfaces are tin-plated, except area of cut. 10. Lead thickness: 0.25 mm. 11. Pins: D1, D2 = drain; G1, G2 = gate; S = source, source; V1, = V2 drain = no video DC bias, NC or connect decoupling, to GRD no DC bias, V2 = NC or connected to ground
10 10 Revision History Revision Date Data Sheet Type Page Subjects (major changes at each revision) Advance All Data Sheet reflects advance specification for product development Production All Data Sheet reflects released product specification Production 6, 7 Updated PCB layout and components information Production 7 Update components information Production All Converted to Wolfspeed Data Sheet For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright 18 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc.
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CMPA006005D 5 W, 0 MHz - 6.0 GHz, GaN MMIC, Power Amplifier Cree s CMPA006005D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
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More informationmaintaining high gain and efficiency. Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain db = 28 dbm
CGHVF006S 6 W, DC - 5 GHz, 40V, GaN HEMT Cree s CGHVF006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
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More information= 25 C), CW. Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain db P in. = 38 dbm
CGHV42PP 2 W, 5 V, GaN HEMT Cree s CGHV42PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV42PP, operating from a 5 volt rail, offers a general purpose, broadband
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More informationParameter 5.2 GHz 5.5 GHz 5.9 GHz Units. Small Signal Gain db. Output Power W. Efficiency
CMPA5259025F 25 W, 5200-5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers Cree s CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated
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More information= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
CMPA625F 25 W, 2 MHz-6 MHz, GaN MMIC Power Amplifier Cree s CMPA625F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
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More information= 25 C), CW. Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain db P in. = 38 dbm
CGHV4PP W, 5 V, GaN HEMT Cree s CGHV4PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV4PP, operating from a 5 volt rail, offers a general purpose, broadband solution
More information= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
CMPA0060002F 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from185 MHz to 1995 MHz.
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More information= 25 C) Note: Measured in CGHV96100F2-TB (838179) under 100 µs pulse width, 10% duty, Pin 42.0 dbm (16 W) Applications. Marine Radar.
CGHV96100F2 100 W, 8.4-9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN
More information= 25 C) Note: Measured at -30 dbc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.
CGHV965F1 5 W, 7.9-9.6 GHz, 5-ohm, Input/Output Matched GaN HEMT Cree s CGHV965F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies
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More information= 25 C) Parameter 8.0 GHz 9.0 GHz 10.0 GHz 11.0 GHz Units Small Signal Gain db P OUT. = 25 dbm W Power P IN
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