LDMOS RF Power Transistor HTN7G21P160H. 1. Features. 2. Applications. 3. Items for Ordering. Package:H2110S-6L. Pin Connections
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1 LDMOS RF Power Transistor 1. Features Advanced High Performance In-Package Doherty Grater Negative Gate-Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction System Designed for Wide Instantaneous Bandwidth Applications Internally Matched for Ease of Use Integrated ESD Protection Excellent Robustness Excellent Thermal Stability RoHS Compliant HTN7G21P160H Package:H2110S-6L 2. Applications GSM EDGE MC-GSM CDMA W-CDMA LTE WiMAX Pin Connections 3. Items for Ordering Type Package Description Package Name HTN7G21P160H Earless flanged ceramic package; 6 leads H2110S-6L LDMOS Transistor 1 / 11
2 4. Typical Performances This RF LDMOS transistor is designed for base station applications covering the frequency range of 1800MHz to 2200MHz. Table 1. Single-Carrier WCDMA typical performances VDD=28V, IDQA=600mA, VGSB=0.7V, Pout=44.8dBm(30W)Avg. Input signal Probability on CCDF, in Huatai Test Fixture. Frequency (MHz) Gain (db) Efficiency (%) Output PAR (db) ACPR (dbc) Maximum Ratings Table 2. Maximum Ratings Rating Symbol Value Unit Drain to Source Voltage V DSS -0.5, +65 V Gate to Source Voltage V GS -5.0, +10 V Storage Temperature Range T stg -55 to +150 Operating Junction Temperature Range T J -40 to Thermal Characteristics Table 3. Thermal Characteristics Parameter Symbol Conditions Value Unit Thermal Resistance (Junction to Packing flange) R θjc Case Temperature:80 CW Output Power:160W 0.4 /W LDMOS Transistor 2 / 11
3 7. Electrical Characteristics Table 4.Electrical Characteristics Parameter Symbol Conditions Min Type Max Unit Breakdown Voltage V (BR)DSS V GS =0V; I D =108uA V Gate Threshold Voltage V GS(th) V DS =V GS ; I D =108uA V Drain Leakage Current I DSS V DS =65V; V GS =0V ua Gate Leakage Current I GSS V DS =0V; V GS =10V ua Drain to Source on-state Resistance R DS(on) V GS =10V; I D =540mA mω Table 5. ESD Characteristics Conditions Grade HBM(JESD22--A114) MM (EIA/JESD22--A115) CDM(JESD22--C101) 1B A III Table 6. Load Mismatch(in Huatai Test Fixture) Conditions VSWR=10:1 at all Phase Angles CW: VDD=28V, f=1960mhz, IDQA=600mA, VGGB=0.7V, Pout=160W Results No Device Degradation LDMOS Transistor 3 / 11
4 Table 7. Typical Performances(in Huatai Test Fixture) Characteristic Symbol Min Type Max Unit VDD=28V, IDQA=600mA, VGGB=0.7V, Pout=44.8dBm (30W), Avg. f=1960mhz, Single-Carrier W-CDMA, Input Signal Probability on CCDF. ACPR measured in 3.84MHz Channel 5MHz Offset. Power Gain G ps db Drain Efficiency η D % Adjacent Channel Power Ratio ACPR dbc Output Signal Peak-to-Average Ratio PAR db VDD=28V, IDQA=600mA, VGGB=0.7V, Pulsed CW 1dB Compression Point P1dB dbm 3dB Compression Point P3dB dbm AM/PM (Maximum value measured at the P3dB compression point across the MHz frequency range.) VBW (IMD third order intermodulation inflection point) Gain Flatness in 145MHz Pout=44.8dBm (30W) Avg. Φ VBW res MHz G F db LDMOS Transistor 4 / 11
5 8. Load-Pull Performance Single Side, V DD =28V, I DQ =300mA, 40us Pulse Width, 4% Duty Table 8. Load-Pull P3dB Maximum Power Tuning Max Output Power P3dB f (MHz) Z source Z load Gain (Ω) (Ω) (db) (dbm) (W) j j j j η D (%) Table9. Load-Pull P3dB Maximum Drain Efficiency Tuning Max Drain Efficiency P3dB f (MHz) Z source Z load Gain (Ω) (Ω) (db) (dbm) (W) j j j j η D (%) LDMOS Transistor 5 / 11
6 9. Reference Design MHz-2025MHz Layout of Test Circuit Table MHz-2025MHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C3, C4, C9, C10, C19, C20, C21, C22 10pF Chip Capacitors ATC600S100BT250XT ATC C1, C2, C5, C6 0.5pF Chip Capacitors ATC600S0R8 BT250XT ATC C7, C8 1.5pF Chip Capacitors ATC600S1R5 BT250XT ATC C15, C16 2.7pF Chip Capacitors ATC600S2R7 BT250XT ATC C17, C18 0.8pF Chip Capacitors ATC600S0R8 BT250XT ATC C11, C12 10uF Chip Capacitors Arbitrary Arbitrary C13, C14 4.7uF Chip Capacitors C3225X7S2A475M200AB Murata C27, C28 10uF Chip Capacitors 22201C106MAT2A AVX R1, R2 10ohm, 1/4W Chip Resistors Arbitrary Arbitrary R3, R4 10Kohm, 1/4W Chip Resistors Arbitrary Arbitrary R5 50ohm, 10W Chip Resistors Arbitrary Arbitrary Z MHz Band, 90º, 3dB Hybrid 1P503S Anaren PCB RO4350B, 20mil, εr = Rogers LDMOS Transistor 6 / 11
7 Typical Performances Pulsed Signal Output Power vs Input Power with Pulsed Signal VDD=28V, IDQA=600mA, VGSB=0.7V, 100us Pulse Width,10% Duty MHz Pout (dbm) MHz VDD=28V, IDQA=600mA, VGSB=0.7V Pulsed CW, 100us Width, 10% Duty Pin (dbm) Gain, Efficiency vs Output Power VDD=28V, IDQA=600mA, VGSB=0.7V, 100us Pulse Width,10% Duty MHz Efficiency 50 Gain (db) Gain 2025MHz Efficiency (%) 13 VDD=28V, IDQA=600mA, VGSB=0.7V Pulsed CW, 100us Width, 10% Duty Pout (dbm) 0 LDMOS Transistor 7 / 11
8 Typical Performances Single Carrier W-CDMA Gain, Efficiency, ACPR vs Output Power VDD=28V, IDQA=600mA, VGSB=0.7V, Single-Carrier W-CDMA, Input Signal Probability on CCDF VDD=28V, IDQA=600mA, VGSB=0.7V Single-Carrier W-CDMA, 3.84MHz Channel Bandwidth Gain (db) MHz Efficiency (%) ACPR(dBc) MHz Input Signal Probability on CCDF Pout (dbm) Efficiency, ACPR, PAR vs Pout=30W Avg. VDD=28V, IDQA=600mA, VGSB=0.7V, Single-Carrier W-CDMA, Input Signal Probability on CCDF ACPR VDD=28V, Pout=30W(Avg.), IDQA=600mA VGSB=0.7V, Single-Carrier W-CDMA, 3.84MHz Channel Bandwidth Efficiency (%) Eff PAR ACPR (dbc) PAR (db) Input Signal PAR=9.9dB@0.01% Probability on CCDF Frequency(MHz) 7.0 LDMOS Transistor 8 / 11
9 Typical Performances Intermodulation Distortion Products Intermodulation Distortion Products vs Two-Tone Pout=72.4W PEP. VDD=28V,IDQA=600mA,VGSB=0.7V,f=1960MHz IM3-L IM3-H IMD(dBc) VDD=28V, Pout=72.4W(PEP) IDQA=600mA, VGSB=0.7V IM5-L IM5-H IM7-L IM7-H Two-Tone Measurements (f1+f2)/2=center Frequency of 1960MHz Two-Tone Spacing(MHz) LDMOS Transistor 9 / 11
10 10. Package Dimensions LDMOS Transistor 10 / 11
11 11. DISCLAIMER Information in this document is believed to be accurate and reliable. However, Huatai Electronics does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Huatai Electronics takes no responsibility for the content in this document if provided by an information source outside of Huatai Electronics or an authorized Huatai Electronics distributor In no event shall Huatai Electronics be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Huatai Electronics products are not designed, authorized or warranted to be suitable for use in life support, lifecritical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Huatai Electronics product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Huatai Electronics and its distributors accept no liability for inclusion and/or use of Huatai Electronics products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Huatai Electronics reserves the right to make changes without further notice to any products herein. Typical parameters that may be provided in Huatai Electronics data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Huatai Electronics does not convey any license under its patent rights nor the rights of others. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance. For the full Terms and conditions of commercial sale or further details of the products contained therein, please contact Huatai Electronics or an authorized Huatai Electronics distributor. How to reach us: KUNSHAN HUATAI ELETRONICS LTD. ALL RIGHTS RESERVED. LDMOS Transistor 11 / 11
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Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR 7 7.
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Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 96 MHz. Can
RF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2. Freescale Semiconductor, I. The Wideband IC Line SEMICONDUCTOR TECHNICAL DATA
MOTOROLA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications.
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications.
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data Document Number: Rev. 0, 7/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 220 W CW high efficiency RF power transistor is designed
Efficiency (%) gtra364002fc_g1. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF GaN on SiC HEMT 0 W, 48 V, 30 30 MHz Description The is a 0-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular
BLF888E; BLF888ES. UHF power LDMOS transistor
Rev. 2 30 August 2016 Product data sheet 1. Product profile 1.1 General description A 750 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 150 W
Watts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions MRF9085SR3/MRF9085LSR3
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9085/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and
RF Power Field Effect Transistor LDMOS, MHz, 15W, 26V
RF Power Field Effect Transistor LDMOS, 8 17, 15W, 26V Features Designed for broadband commercial applications up to 1.7GHz High, High Efficiency and High Linearity Typical P1dB performance at 96, 26Vdc,
Efficiency (%) g261701fa-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
g26171fa-gr1a GTVA26171FA Thermally-Enhanced High Power RF GaN on SiC HEMT 17 W, 5 V, 26 269 MHz Description The GTVA26171FA is a 17-watt (P 3dB ) GaN on SiC high electron mobility transistor (HEMT) for
Symbol Parameter VRF151(MP) Unit V DSS Drain-Source Voltage 170 V I D Continuous Drain T C
V5 V5MP 5V, 5W, 75MHz POWER VERTICAL MOSFET The V5 is a gold-metallized silicon n-channel power transistor designed for broadband commercial and military applications requiring high power and gain without
Symbol Parameter VRF161(MP) Unit V DSS Drain-Source Voltage 170 V I D Continuous Drain T C
V161(MP) 5V, 2W, 15MHz POWER VERTICAL MOSFET The V161 is a gold-metallized silicon n-channel power transistor designed for broadband commercial and military applications requiring high power and gain without
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors suitable for both narrowband and broadband CW or pulse
Symbol Parameter VRF152(MP) Unit V DSS Drain-Source Voltage 130 V I D Continuous Drain T C
VRF52 VRF52MP 5V, 5W, 75MHz RF POWER VERTICAL MOSFET The VRF52 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power
PTFC270051M. High Power RF LDMOS Field Effect Transistor 5 W, 28 V, MHz. Description. Features. RF Characteristics, 2170 MHz
c271m-gr1.3 High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27 MHz.
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz Suitable
BLM6G10-30; BLM6G10-30G
Rev. 2 1 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 860 MHz to 960 MHz. Available in Gull Wing
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data Document Number: A2T8S6W3S Rev., 5/25 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 32 W RF power LDMOS transistors are designed for
Innogration (Suzhou) Co., Ltd.
7MHz-27MHz, W, 28V RF Power LDMOS FETs Description The ITCH225E2 is a -watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 7MHz to 27 MHz ITCH225E2
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Technical Data Document Number: A2T21S260W12N Rev. 0, 1/2017 RF ower LDMOS Transistor N--Channel nhancement--mode Lateral MOSFT This 56 W RF power LDMOS transistor is designed for cellular base station
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 250 W CW RF power transistor is designed for consumer and commercial cooking applications
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800
Efficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48, 755 805 MHz Description The is a 370-watt ( ) LDMOS FET manufactured with Wolfspeed's 48- LDMOS process. It is designed for use in multi-standard cellular
RF Power GaN Transistor
Freescale Semiconductor Technical Data Document Number: AGS16--1S Rev., 5/15 RF ower GaN Transistor This 3 W RF power GaN transistor is designed for cellular base station applications covering the frequency
BLF4G10LS-120. UHF power LDMOS transistor. G p (db) P L (W)
Rev. 1 1 January 26 Product data sheet 1. Product profile 1.1 General description 12 W LDMOS power transistor for base station applications at frequencies from 8 MHz to 1 MHz. Table 1: Typical performance
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used
CCharacteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR 30 dbc. Output 0.01% CCDF OPAR 7 db
Advance GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 3600 MHz Description The GTRA364002FC is a 400-watt (P SAT ) GaN on SiC high electron mobility transistor (HEMT)
RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Freescale Semiconductor Technical Data Document Number: AFT21S220W02S Rev. 0, 2/2014 RF ower LDMOS Transistors N--Channel nhancement--mode Lateral MOSFTs These 50 W RF power LDMOS transistors are designed