Efficiency (%) Characteristic Symbol Min Typ Max Units

Transcription

1 PTF181 LDMOS RF Power Field Effect Transistor W, MHz, MHz W, MHz Description Features The PTF181 is a W, internally matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability. EVM RMS (Average %)x EDGE EVM Performance EVM and vs. Output Power V DD = 28 V, I DQ =.18 A, f = MHz EVM Output Power (dbm) ESD: Electrostatic discharge sensitive device observe handling precautions! RF Characteristics, EDGE Operation at T CASE = 25 C unless otherwise indicated 4 3 (%) Typical EDGE performance - Average output power = 4. W - Gain = 19. db - = 28% - EVM = 1.1 % Typical WCDMA performance - Average output power = 1.8 W - Gain = 18. db - = % - ACPR = 45 dbc Typical CW performance - Output power at P 1dB = 15 W - = 5% Integrated ESD protection: Human Body Model Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling :1 28 V, W (CW) output power PTF181S Package EDGE Measurements (not subject to production test verified by design/characterization in Infineon test fixture) V DD = 28 V, I DQ = 18 ma, P OUT = 4 W, f = MHz Characteristic Symbol Min Typ Max Units Error Vector Magnitude EVM (RMS) 1.1 % Modulation 4 khz ACPR 6 dbc Modulation 6 khz ACPR 7 dbc Gain G ps 19 db Drain η D 28 % Two Tone Measurements (tested in Infineon test fixture) V DD = 28 V, I DQ = 18 ma, P OUT = W PEP, f = 199 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Units Gain G ps db Drain η D 3 33 % Intermodulation Distortion IMD 3 28 dbc Data Sheet

2 PTF181 RF Characteristics, WCDMA Operation at T CASE = 25 C unless otherwise indicated WCDMA Measurements (not subject to production test verified by design/characterization in Infineon test fixture) V DD = 28 V, I DQ = 135 ma, P OUT = 1.8 W, f = 217 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 CCDF Characteristic Symbol Min Typ Max Units Adjacent Channel Power Ratio ACPR 45 dbc Gain G ps 18 db Drain η D % Two Tone Measurements (not subject to production test verified by design/characterization in Infineon test fixture) V DD = 28 V, I DQ = 135 ma, P OUT = W PEP, f = 217 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Units Gain G ps 18 db 3 dbc IM3 η D 37 % Intermodulation Distortion IMD 3 dbc DC Characteristics at T CASE = 25 C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain Source Breakdown Voltage V GS = V, I DS = µa V (BR)DSS 65 V Drain Leakage Current V DS = 28 V, V GS = V I DSS 1. µa On State Resistance V GS = V, V DS =.1 A R DS(on).83 Ω Operating Gate Voltage V DS = 28 V, I DQ = 18 ma V GS V Gate Leakage Current V GS = V, V DS = V I GSS 1. µa Maximum Ratings at T CASE = 25 C unless otherwise indicated Parameter Symbol Value Unit Drain Source Voltage V DSS 65 V Gate Source Voltage V GS.5 to +12 V Junction Temperature T J C Total Device Dissipation P D 58 W Above 25 C derate by.333 W/ C Storage Temperature Range T STG 4 to +15 C Thermal Resistance (T CASE = 7 C, W CW) R θjc 3. C/W Data Sheet

3 PTF181 Typical Performance measurements taken in broadband test fixture EDGE Modulation Spectrum Performance V DD = 28 V, I DQ =.18 A, f = MHz EVM and Modulation Spectrum Performance f = MHz, P OUT = 3.5 W ACPR (dbc) khz 6 khz 4 3 (%) EVM RMS (Average %) EVM 4 khz 6 khz ACPR (dbc) Output Power (dbm) Quiscent Drain Current (A) Gain & vs. Output Power V DD = 28 V, I DQ =.18 A, f = 199 MHz Output Power, Gain & (at P-1dB) vs. Frequency V DD = 28 V, I DQ =.18 A Gain (db) Gain (%) Gain (db) Gain Output Power Output Power (dbm), (%) Output Power (dbm) Frequency (MHz) Data Sheet

4 PTF181 Typical Performance (cont.) Power Gain vs. Output Power V DD = 28 V, f = 199 MHz Broadband Test Fixture Performance V DD = 28 V, I DQ =.18 A, P OUT = W Power Gain (db) 19 I DQ =.235 ma I DQ =.18 ma I DQ =.135 ma Gain (db), (%) 4 3 Gain Return Loss Return Loss (db) 18 1 Output Power (W) Frequency (MHz) Broadband Test Fixture Performance V DD = 28 V, I DQ =.18 A, P OUT = 4 W Output Power vs. Supply Voltage I DQ =.18 A, f = 199 MHz 3 42 Gain (db), (%) Gain Return Loss Return Loss (db) Output Power (dbm) Frequency (MHz) Supply Voltage (V) Data Sheet

5 PTF181 Typical Performance (cont.) IMD (dbc) Intermodulation Distortion vs. Output Power V DD = 28 V, I DQ =.18 A, f 1 = 199 MHz, f 2 = 1991 MHz rd Order 5th -7 7th Output Power, PEP (dbm) Normalized Bias Voltage Gate-Source Voltage vs. Case Temperature Voltage normalized to typical gate voltage. Series show current Case Temperature ( C).5 A.28 A.51 A.74 A.97 A 1. A Typical Performance, WCDMA Operation - Two Tone Drive up V DD = 28V, I DQ = 135 ma, f = 217 MHz, tone spacing = 1 MHz 4 Single Carrier WCDMA Drive Up V DD = 28 V, I DQ = 135 ma, f = 217 MHz, 3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67% clipping, P/A R = 8.7 db, 3.84 MHz bandwidth Intermodulation Distortion (dbc) IM Drain (%) Adjacent Channel Power Ratio (dbc) ACPR 15 5 Drain (%) Output Power (dbm), PEP Average Output Power (dbm) Data Sheet

6 LENGTHS TOWARD LOAD - PTF181 Broadband Circuit Impedance Data D GE Z = 5 Ω Z Source D Z Load.1 G Z Load MHz S 19 MHz Frequency Z Source Ω Z Load Ω MHz R jx R jx..1 Z Source MHz MHz Data Sheet

7 PTF181 Reference Circuits V GG R1 C1 R2 C5 C6 + C7 VDD R3 l5 RF_IN C3 l1 l2 l3 DUT l4 C8 l6 l7 l8 RF_OUT C2 C4 C9 181_sch Reference Circuit Schematic Circuit Assembly Information DUT PTF181 LDMOS Transistor Circuit Board.76 mm [.3 ] thick, ε r = 4.5 Rogers TMM4, 2 oz. Copper Microstrip Electrical Characteristics at 199 MHz Dimensions: L x W (mm) Dimensions: L x W (in.) l1.133 λ, 5 Ω.92 x x.54 l2.96 λ, 5 Ω 7.87 x x.54 l3.155 λ, 9.5 Ω 11.3 x x.49 l4.8 λ, 12.8 Ω.64 x x.349 l5.286 λ, 7 Ω x x.28 l6.247 λ, 12.8 Ω x x.349 l7.145 λ, 5 Ω x x.54 l8.8 λ, 5 Ω.64 x x.54 Data Sheet

8 PTF181 Reference Circuits (cont.) MHz Operation Component Description Manufacturer P/N or Comment C1, C3, C5, C8 Capacitor, pf ATC B C2 Capacitor, 1.7 pf ATC B 1R7 C4 Capacitor, 2. pf ATC A 2R C6 Capacitor,.1 µf, 5 V Digi-Key P4525-ND C7 Capacitor, µf, 5 V Digi-Key P5182-ND C9 Capacitor,.6 pf ATC A R6 R1, R2, R3 Resistor, 2 ohm, 1/4 W Digi-Key 2QBK GHz Operation Component Description Manufacturer P/N or Comment C1, C3, C5, C8 Capacitor, pf ATC B C2 Capacitor,.8 pf ATC B R8 C4 Capacitor, 2.2 pf ATC A 2R2 C6 Capacitor,.1 µf, 5 V Digi-Key P4525-ND C7 Capacitor, µf, 5 V Digi-Key P5182-ND C9 Capacitor, 1. pf ATC A 1R R1, R2, R3 Resistor, 2 ohm, 1/4 W Digi-Key 2QBK Reference circuit assembly diagramt 1 (not to scale) 1 Gerber files for this circuit are available upon request. Data Sheet

9 PTF181 Ordering Information Type Package Outline Package Description Marking PTF181S Thermally enhanced, surface mount PTF181S Package Outline Specifications Package [.7] 6 X 6.6 [6 X.26] 4X R.25 [R.] MAX. 2X 3.3 [.13] LC D 2X.±.3 [.8±.1] 2X 1.27 [.5] 1.2 [.4].51 [.] 2X 3.3 [.13] C L 6.86 [.27].16±.25 [.4±.] 4X.51 [.] 4X.25 MAX [.] 2.99 ±.38 [1.14 ±.] 6.86 [.27] G 6.48 [.255] SQ 2X 1.65±.51 [.65±.].74±.5 [.28±.2] -7 DRAFT ANGLE LEAD COPLANARITY BOTTOM OF LEAD TO BOTTOM OF PACKAGE.±.2 (TYP) S 6.35 [.25] SQ H Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness:.21 ±.3 [.8 ±.1] Find the latest and most complete information about products and packaging at the Infineon Internet page Data Sheet

10 PTF181 Revision History: Data Sheet Previous Version: none Page Subjects (major changes since last revision) 1, 5, 7 Add information about WCDMA operation We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerrf@infineon.com To request other information, contact us at: (1-877-GOLDMOS) USA or International Edition Published by Infineon Technologies AG, St.-Martin-Strasse 53, München, Germany Infineon Technologies AG 3. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.