= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
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1 CMPA625F 25 W, 2 MHz-6 MHz, GaN MMIC Power Amplifier Cree s CMPA625F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package. PN: CMPA625F Package Type: 7819 Typical Performance Over 2 MHz - 6. GHz (T C = 25 C) Parameter 2 MHz.5 GHz 1. GHz 2. GHz 3. GHz 4. GHz 5. GHz 6. GHz Units Gain db Output P IN W Power P IN db P IN % Note 1 : V DD = 5 ma Features Applications 17 db Small Signal Gain 25 W Typical P SAT Operation up to 5 V High Breakdown Voltage Ultra Broadband Amplifiers Test Instrumentation EMC Amplifier Drivers High Temperature Operation Rev 3.1 April x.5 total product size Figure 1. Subject to change without notice. 1
2 Absolute Maximum Ratings (not simultaneous) at 25 C Parameter Symbol Rating Units Drain-source Voltage V DSS 84 VDC Gate-source Voltage V GS -1, +2 VDC Storage Temperature T STG -65, +15 C Operating Junction Temperature T J 225 C Maximum Forward Gate Current I GMAX 4 ma Soldering Temperature 1 T S 245 C Screw Torque τ 4 in-oz Thermal Resistance, Junction to Case R θjc 3.3 C/W Case Operating Temperature 2,3 T C -4, +15 C Note: 1 Refer to the Application Note on soldering at 2 Measured for the CMPA625F at P IN. Electrical Characteristics (Frequency = 2 MHz to 6. GHz unless otherwise stated; T C = 25 C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold Voltage 2 V (GS)TH V V DS = 2 V, I D = 2 ma Gate Quiescent Voltage V (GS)Q -2.7 VDC V DD = 5 ma, P IN Saturated Drain Current I DC 12 A V DS = 12 V, V GS = 2. V RF Characteristics 1 Power Output at P 4.5 GHz P OUT dbm V DD = 5 ma, P IN Power Output at P 5. GHz P OUT dbm V DD = 5 ma, P IN Power Output at P 6. GHz P OUT dbm V DD = 5 ma, P IN Drain Efficiency at P 4.5 GHz η % V DD = 5 ma, P IN Drain Efficiency at P 5. GHz η % V DD = 5 ma, P IN Drain Efficiency at P 6. GHz η % V DD = 5 ma, P IN Output Mismatch Stress VSWR 5 : 1 Y No damage at all phase angles, V DD = 5 ma, P IN Small Signal RF Characteristics S21 S11 S22 Frequency Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Conditions.2 GHz -.25 GHz V DD = 5 ma.25 GHz -.5 GHz V DD = 5 ma.5 GHz - 1. GHz V DD = 5 ma 1. GHz - 2. GHz V DD = 5 ma 2. GHz - 3. GHz V DD = 5 ma 3. GHz - 6. GHz V DD = 5 ma Notes: 1 P OUT is defined as P IN. 2 The device will draw approximately 55-7 ma at pinch off due to the internal circuit structure. Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 2 CMPA625F Rev 3.1 USA Tel:
3 Typical Performance Small Signal Gain Input & Output Return Losses 25 vs Frequency at 5 V vs Frequency at 5 V Gain (d db) 15 1 ss (db) Return Los S22 S Small Signal Gain Input & Output Return Losses vs Frequency at 4 V vs Frequency at 4 V Gain (d db) 15 1 ss (db) Return Los S22 S Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 3 CMPA625F Rev 3.1 USA Tel:
4 Typical Performance 5 Output Power at P IN vs Frequency as a Function of Drain Voltage 2 Power Gain at P IN vs Frequency as a Function of Drain Voltage V 4V 16 5V 4V Output Pow wer (dbm) Gain (db) % Drain Efficiency at P IN vs Frequency as a Function of Drain Voltage 6% 5V 4V 5% iency (%) Drain Effici 4% 3% 2% 1% % Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 4 CMPA625F Rev 3.1 USA Tel:
5 Typical Performance Gain vs Input Power at 5V Efficiency vs Input Power at 5 V 25 as a Function of Frequency 7% as a Function of Frequency 2 6% 2 MHz 1. GHz 2. GHz 5% 4. GHz 6. GHz Gain (d db) 15 1 cy (%) Efficienc 4% 3% 5 2 MHz 1. GHz 2. GHz 4. GHz 6. GHz 2% 1% Input Power (dbm) % Input Power (dbm) Gain vs Input Power at 4V Efficiency vs Input Power at 4 V as a Function of Frequency as a Function of Frequency 25 7% 2 MHz 6% 1. GHz 2 2. GHz 5% 4. GHz 6. GHz Gain (d db) 15 1 cy (%) Efficienc 4% 3% 5 2 MHz 1. GHz 2. GHz 4. GHz 6. GHz 2% 1% Input Power (dbm) % Input Power (dbm) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 5 CMPA625F Rev 3.1 USA Tel:
6 General Device Information The CMPA625F is a GaN HEMT MMIC Power Amplifier, which operates between 2 MHz - 6. GHz. The amplifier typically provides 17 db of small signal gain and 25 W saturated output power with an associated power added efficiency of better than 2 %. The wideband amplifier s input and output are internally matched to 5 Ohm. The amplifier requires bias from appropriate Bias-T s, through the RF input and output ports. The CMPA625F is provided in a flange package format. The input and output connections are gold plated to enable gold bond wire attach at the next level assembly. The measurements in this data sheet were taken on devices wire-bonded to the test fixture with 2 mil gold bond wires. The CMPA625F-TB and the device were then measured using external Bias-T s, (TECDIA: TBT- H6M2 or similar), as shown in Figure 2. The Bias-T s were included in the calibration of the test system. All other losses associated with the test fixture are included in the measurements. V GG V DD RF In RF Out Input Bias T Output Bias T CMPA625F CMPA2562F mounted in the test fixture Figure 2. Typical test system setup required for measuring CMPA625F-TB Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 6 CMPA625F Rev 3.1 USA Tel:
7 CMPA625F Power Dissipation De-rating Curve Power Dissipation derating Curve vs max Tcase 6 Power Dissipation (W) Note Maximum Case Temperature ( C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 25 V) JEDEC JESD22 A114-D Charge Device Model CDM II (2 < 5 V) JEDEC JESD22 C11-C Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 7 CMPA625F Rev 3.1 USA Tel:
8 CMPA625F-TB Demonstration Amplifier Circuit CMPA625F-TB Demonstration Amplifier Circuit Outline Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 8 CMPA625F Rev 3.1 USA Tel:
9 CMPA625F-TB Demonstration Amplifier Circuit Bill of Materials Designator Description Qty J1,J2 CONNECTOR, SMA, AMP PCB, TACONIC, RF-35-1-CH/CH 1 Q1 CMPA625F 1 Notes 1 The CMPA625F is connected to the PCB with 2. mil Au bond wires. 2 An external bias T is required. Product Dimensions CMPA625F (Package Type 7819) Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 9 CMPA625F Rev 3.1 USA Tel:
10 Disclaimer Specifications are subject to change without notice. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of For more information, please contact: Sarah Miller Marketing & Export Cree, RF Components Ryan Baker Marketing Cree, RF Components Tom Dekker Sales Director Cree, RF Components Copyright All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Other trademarks, product and company names are the property of their 1 CMPA625F Rev 3.1 USA Tel:
= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain
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Gallium Nitride 28V 50W, RF Power Transistor Description The GTAH58050GX is a 50W internally matched, GaN HEMT, designed from 5 to 6GHz, especially point-to-point communication, broadband wireless access,
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
GTRA36282FC Thermally-Enhanced High Power RF GaN on SiC HEMT 28 W, 48 V, 34 36 MHz Description The GTRA36282FC is a 28-watt ( ) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR 7 7.
Thermally-Enhanced High Power RF GaN on SiC HEMT W, 48 V, 34 36 MHz Description The is a -watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power
More informationGain: 960 MHz Gain: 1030 MHz Gain: 1090 MHz Gain: 1150 MHz Gain: 1215 MHz Eff: 960 MHz Eff: 1030 MHz Eff: 1090 MHz Eff: 1150 MHz Eff: 1215 MHz
g107001efc-gr3 Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 1215 MHz Description The is a 700-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz
More informationEfficiency (%) gtra364002fc_g1. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF GaN on SiC HEMT 0 W, 48 V, 30 30 MHz Description The is a 0-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular
More informationCharacteristic Symbol Min Typ Max Unit. Intermodulation Distortion IMD 35 dbc All published data at T CASE = 25 C unless otherwise indicated
PTFB950FL Thermally-Enhanced High Power RF LDMOS FET 40 W, 90 990 MHz Description The PTFB950FL is a 40-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 90
More informationMQ1470VP LDMOS TRANSISTOR
750W, 50V High Power RF LDMOS FETs Description The MQ1470VP is a 750-watt, high performance, internally matched LDMOS FET, designed for L band pulse application with frequencies 1.2 to 1.4GHz full band
More informationPTFB193404F. Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, MHz. Description. Features. RF Characteristics
PTFB9404F Thermally-Enhanced High Power RF LDMOS FET 40 W, 0 V, 90 990 MHz Description The PTFB9404F is a 40 watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More informationInnogration (Suzhou) Co., Ltd.
3400-3600MHz, 40W, 28V RF LDMOS FETs Description The is a 40-watt, internally-matched LDMOS FETs, designed for cellular application with frequencies from 3400 to 3600MHz. It can biased at class AB or Class
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 2 W, 48, 746 821 MHz Description The PTA0827NF is a 2-watt LDMOS FET manufactured with Wolfspeed's 48- LDMOS process. It is designed for use in multi-standard
More informationPTFB211503FL. Thermally-Enhanced High Power RF LDMOS FET 150 W, MHz. Description. Features. RF Characteristics
PTFB50FL Thermally-Enhanced High Power RF LDMOS FET 50 W, 0 70 MHz Description The PTFB50FL is a thermally-enhanced, 50-watt, LDMOS FET designed for cellular power amplifier applications in the 0 to 70
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 8 W, 48 V, 746 960 MHz Description The PTRA094252FC is a 8-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 746
More informationMR2003C LDMOS TRANSISTOR
18W, 12.5V High Power RF LDMOS FETs Description The MR2003C is a 18-watt, Push-Pull configuration, unmatched LDMOS FETs, designed for ISM and Mobile radio applications with frequencies under 2GHz. It can
More informationPTFB213004F. High Power RF LDMOS Field Effect Transistor 300 W, MHz. Description. Features. RF Characteristics
High Power RF LDMOS Field Effect Transistor W, 7 MHz Description The is a -watt LDMOS FET designed for class AB operation in cellular amplifiers covering the to 7 MHz frequency band. Features include high
More informationPTFC270051M. High Power RF LDMOS Field Effect Transistor 5 W, 28 V, MHz. Description. Features. RF Characteristics, 2170 MHz
c271m-gr1.3 High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27 MHz.
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 370 W, 48, 755 805 MHz Description The is a 370-watt ( ) LDMOS FET manufactured with Wolfspeed's 48- LDMOS process. It is designed for use in multi-standard cellular
More informationMR2006C LDMOS TRANSISTOR
24W, 12.5V High Power RF LDMOS FETs Description The MR2006C is a 24-watt, Push-Pull configuration, unmatched LDMOS FETs, designed for ISM and Mobile radio applications with frequencies under 2GHz. It can
More informationAdvance PTNC210604MD. Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W, 28 V, MHz. Description. Features
Advance PTNC210604MD Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W, 28 V, 1805 2200 MHz Description The PTNC210604MD is a wideband, two-stage, LDMOS integrated power amplifier. It incorporates
More informationnot recommended for new design
c262808fv-gr1 Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 26 2690 MHz Description The is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More informationInnogration (Suzhou) Co., Ltd.
2400-2500MHz, 350W, High Power RF LDMOS FETs Description The ITCH25350D4 is a 350-watt, internally matched LDMOS FETs, designed for Multiple use especially RF Energy application including cooking, heating
More informationnot recommended for new design Efficiency (%) Characteristic Symbol Min Typ Max Unit Intermodulation Distortion IMD dbc
Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 1880 MHz Description The is a 170-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications. Features include
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR
Thermally-Enhanced High Power RF LDMOS FET 275 W, 48 V, 733 805 MHz Description The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More informationInnogration (Suzhou) Co., Ltd.
3400-3600MHz, 75W, 28V RF LDMOS FETs Description The ITCH36075B2 is a 75-watt, internally-matched LDMOS FETs, designed for cellular application with frequencies from 3400 to 3600MHz. It can biased at class
More informationPTFC270101M. High Power RF LDMOS Field Effect Transistor 10 W, 28 V, MHz. Description. Features. RF Characteristics
c271m-2.1-gr1c High Power RF LDMOS Field Effect Transistor W, 28 V, 9 27 MHz Description The is an unmatched -watt LDMOS FET suitable for power amplifier applications with frequencies from 9 MHz to 27
More informationEfficiency (%) 1215 MHz 15. Characteristic Symbol Min Typ Max Unit
Thermally-Enhanced High Power RF LDMOS FET 0 W, 50 V, 960 1215 MHz Description The PTVA1001EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features
More informationEfficiency (%) ptra082808nf_g1. Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR
Thermally-Enhanced High Power RF LDMOS FET 280 W, 48 V, 790 8 MHz Description The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 790
More informationDrain Efficiency (%) 10 a120501ea_g1-1. Characteristic Symbol Min Typ Max Unit. Return Loss IRL 10 7 db
PTVA1201EA Thermally-Enhanced High Power RF LDMOS FET W, V, 1200 10 MHz Description The PTVA1201EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 10 MHz frequency band. Features
More informationMQ1270VP LDMOS TRANSISTOR
700W, 50V High Power RF LDMOS FETs Description The MQ1270VP is a 700-watt, high performance, internally matched LDMOS FET, designed for avionics applications with frequencies 960 to 1215MHz. It is featured
More informationPreliminary GTVA126001EC/FC
g126001efc-gr1 Thermally-Enhanced High Power RF an on SiC HEMT 600 W, 50 V, 10 1400 MHz Description The TVA126001EC and TVA126001FC are 600-watt an on SiC high electron mobility transistors (HEMT) for
More informationra097008nb-gr1a. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc. Output 0.01% CCDF OPAR
ra097008nb-gr1a Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 9 960 MHz Description The is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
PXAC332FV Thermally-Enhanced High Power RF LDMOS FET 33 W, 28 V, 188 25 MHz Description The PXAC332FV is a 33-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power
More informationDrain Efficiency (%) b092707fh-gr1a. Characteristic Symbol Min Typ Max Unit
b9277fh-gr1a PTFB9277FH Thermally-Enhanced High Power RF LDMOS FET 27 W, 28 V, 925 96 MHz Description The PTFB9277FH is a 27-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 480 W, 48 V, 859 960 MHz Description The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the
More information25W Power Packaged Transistor. GaN HEMT on SiC
25W Power Packaged Transistor GaN HEMT on SiC Description The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety
More informationEfficiency (%) Characteristic Symbol Min Typ Max Unit. Adjancent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FET 18 W, 28 V, 9 96 MHz Description The PTFB9182FC LDMOS FET is designed for use in power amplifier applications in the 9 MHz to 96 MHz frequency band. Features
More informationEfficiency (%) c241002fc-gr1. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
c2412fc-gr1 Thermally-Enhanced High Power RF LDMOS FET 1 W, 28 V, 23 24 MHz Description The is a 1-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power amplifi er
More informationFP Description. Features. Applications. Packaging Information. 50W, 28V GaN HEMT Die
FP28010060 50W, 28V GaN HEMT Die Description The FP28010060 is a 50W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for X-band operation
More informationDrain Efficiency (%) 1300 MHz 1400 MHz 15. Characteristic Symbol Min Typ Max Unit
Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to frequency band. Features include high
More informationFP Description. Features. Applications. Packaging Information. 104W, 48V GaN HEMT D
FP48007104 104W, 48V GaN HEMT D Description The FP48007104 is a 104W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation
More informationIMD Shoulder (dbc) Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF LDMOS FETs 250 W, 50 V, 470 806 MHz Description The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806
More informationFP Description. Features. Applications. Packaging Information. 340W, 48V GaN HEMT D
FP48005340 340W, 48V GaN HEMT D Description The FP48005340 is a 340W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation
More informationFP Description. Features. Applications. Packaging Information. 260W, 48V GaN HEMT D
FP48005260 260W, 48V GaN HEMT D Description The FP48005260 is a 260W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation
More information15W Power Packaged Transistor. GaN HEMT on SiC
Gain (db), Pout (dbm) & PAE (%) Drain Current (A) CHK15A-QIA Description The CHK15A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband
More informationEfficiency (%) c261402fc_gr1. Adjacent Channel Power Ratio ACPR dbc All published data at T CASE = 25 C unless otherwise indicated
c26142fc_gr1 Thermally-Enhanced High Power RF LDMOS FET 14 W, 28 V, 26 269 MHz Description The is a 14-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 26
More information40W Power Packaged Transistor. GaN HEMT on SiC
Gain (db), Pout (dbm) & PAE (%) Id (A) Description 40W Power Packaged Transistor The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband
More informationMQ1271VP LDMOS TRANSISTOR
700W, 50V High Power RF LDMOS FETs Description The MQ1271VP is a 700-watt, high performance, internally matched LDMOS FET, designed for multiple applications with frequencies 960 to 1215MHz. It is featured
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