AGR09085E 85 W, 865 MHz 895 MHz, N-Channel E-Mode, Lateral MOSFET

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1 Introduction The AGR09085E is a high-voltage, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology offering stateof-the-art performance, reliability, and best-in-class thermal resistance. Packaged in an industry-standard package incorporating internal matching and capable of delivering a minimum output power of 85 W, it is ideally suited for today's RF power amplifier applications. YLE (unflanged) Features 06, STYLE (flanged) Figure. Available Packages Table. Thermal Characteristics Parameter Sym Value Unit Thermal Resistance, Junction to Case: R JC Table. Absolute Maximum Ratings* C/W Parameter Sym Value Unit Drain-source Voltage VDSS 65 Vdc Gate-source Voltage VGS 0.5, 5 Vdc Drain Current Continuous ID 8.5 Adc Total Dissipation at TC = 5 C: Derate Above 5 C: Operating Junction Temperature PD * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. W.4 W/ C.4 TJ 00 C Storage Temperature Range TSTG 65, 50 C Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, and traffic codes 8 : Output power (POUT): 0 W. Power gain: 8 db. Efficiency: 8%. Adjacent channel power ratio (ACPR) for 0 khz bandwidth (BW): (750 khz offset: 45 dbc)..98 MHz offset: 60 dbc). Return loss: 0 db. High-reliability, gold-metalization process. Best-in-class thermal resistance. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Si LDMOS. Industry-standard packages. 85 W minimum output power. Table. ESD Rating* AGR09085E Minimum (V) Class HBM 500 B MM 50 A CDM * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD-A4B (HBM), JESD-A5A (MM), and JESD-C0A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

2 Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 0 C. Table 4. dc Characteristics Table 5. RF Characteristics Parameter Symbol Min Typ Max Unit Off Characteristics Drain-source Breakdown Voltage (VGS = 0, ID = µa) V(BR)DSS 65 Vdc Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS.6 µadc Zero Gate Voltage Drain Leakage Current (VDS = 8 V, VGS = 0V) IDSS 00 8 µadc On Characteristics Forward Transconductance (VDS = 0 V, ID = A) GFS 6 S Gate Threshold Voltage (VDS = 0 V, ID = 400 µa) VGS(TH) 4.8 Vdc Gate Quiescent Voltage (VDS =8 V, IDQ = 800 ma) VGS(Q).6 Vdc Drain-source On-voltage (VGS = 0 V, ID = A) VDS(ON) 0. Vdc Output Capacitance (VDS = 8 Vdc, VGS = 0, f = MHz) Parameter Symbol Min Typ Max Unit Dynamic Characteristics COSS 48 pf Reverse Transfer Capacitance (VDS = 8 Vdc, VGS = 0, f = MHz) CRSS. pf Functional Tests (in Supplied Agere Systems Test Fixture) Supplied Test Fixture) (Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz) Linear Power Gain (VDS = 8 V, POUT = 8 W, IDQ = 800 ma) Output Power (VDS = 8 V, db compression, IDQ = 800 ma) Drain Efficiency (VDS = 8 V, POUT = PdB, IDQ = 800 ma) Third-order Intermodulation Distortion (00 khz spacing, VDS = 8 V, POUT = 90 WPEP, IDQ = 800 ma) GL 7 8 db PdB W 55 % IM 0 dbc Input VSWR VSWRI : Ruggedness (VDS = 8 V, POUT = 85 W, IDQ = 800 ma, f = 880 MHz, VSWR = 0:, all angles) No degradation in output power.

3 Test Circuit Illustrations for AGR09085E VGG C5 R4 C4 R FB C C C R C0 C9 C8 Z7 R Z6 C7 Z C C4 C8 C6 Z Z Z4 Z5 C5 C9 C0 C C C7 VDD RF OUTPUT Z C Z Z Z4 RF INPUT C C Z5 Z6 C4 Z7 C7 Z8 C5 Z0 C6 Z9 DUT PINS:. DRAIN. GATE. SOURCE A. Schematic Parts List: Microstrip line: Z 4 in. x in.; Z 65 in. x in.; Z 90 in. x in.; Z in. x 0 in.; Z5 50 in. x 0 in.; Z in. x 00 in.; Z7 0. in. x 00 in.; Z in. x 00 in.; Z in. x 00 in.; Z in. x in.; Z 0.08 in. x in.; Z in. x 0 in.; Z 00 in. x 0 in.; Z4 70 in. x in.; Z5 95 in. x in.; Z6.00 in. x in.; Z7.00 in. x in. ATC chip capacitor: C, C8, C6, C7: 47 pf 00B470JW; C.7 pf 00BR7BW; C4, C, C4: pf 00B0JW; C5, C6, C9, C8: 0 pf 00B00JW; C7 5.6 pf 00B5R6BW. 060 chip capacitor: C0, C9: 0 pf. Kemet chip capacitor: C, C6: 0.0 µf C06C0KRAC7800; C, C0, C: 0. µf C06C04KRAC7800. Johanson Giga-Trim variable capacitor, 79SL: C, C5: pf to 8 pf. Sprague tantalum chip capacitor: C, C4, C5, C7: 0 µf, 5 V; C µf, 5 V. 06 size chip resistor (5 W): R (fixed film RM7BB50J) 5 ; R, (fixed film RM7BB56J) 56 k ; R (fixed film RM7BB0J) ; R4 (fixed film RM7BBJ). k. Kreger ferrite bead: FB 74D9447. Taconic ORCER RF-5: board material, oz. copper, 0 mil thickness, r =.5. B. Component Layout Figure. AGR09085E Test Circuit

4 7 A G R E Typical Performance Characteristics Z0 = 5 Ω 0.0 Ð > WAVELENGTHSTOWARD GENERATORÐ > ± f f ZL 0. INDUCTIVE REACTANCE COMPONENT (+jx/ Zo),ORCAPACITIVESUSCEPTANCE(+jB/Yo) RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) WAVELENGTHSTOWARD LOAD <Ð TANCE (-jb/ Yo) f f ZS.0 MHz (f) ZS Ω (Complex Source Impedance) ZL Ω (Complex Optimum Load Impedance) 865 (f) 0.5 j j. 880 (f) 0.5 j j (f) 0. j j. 4 GATE () DRAIN () ZS ZL INPUT MATCH DUT SOURCE () OUTPUT MATCH Figure. Series Equivalent Input and Output Impedances Agere Systems Inc.

5 Typical Performance Characteristics (continued) ACPR (dbc) S -0 ACP ACP- ALT+ -60 ALT POUT (W)S VDD = 8 Vdc, IDQ = A, TC = 0 C. FREQUENCY = 880 MHz; IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8 THROUGH ; OFFSET = 750 khz; OFFSET =.98 MHz; OFFSET AND BW = 0 khz. Figure 4. ACPR vs. POUT 9 0 POWER GAIN (db) a POWER GAIN POUT = 00 W RETURN LOSS POUT = 0 W INPUT RETURN LOSS (db) FREQUENCY (MHz)A VDD = 8 Vdc, IDQ = A, TC = 0 C, WAVEFORM = CW. Figure 5. Power Gain and Return Loss vs. Frequency

6 Typical Performance Characteristics (continued) POWER 880 MHz POWER GAIN (db) db MHz 895 MHz POUT (W)Z VDD = 8 Vdc, IDQ = A, TC = 0 C, WAVEFORM = CW. Figure 6. Power Gain vs. Power Out MHz 90 POUT (W) Z MHz POUT EFFICIENCY 895 MHz 865 MHz DRAIN EFFICIENCY (%)Z PIN (W)Z VDD = 8 Vdc, IDQ = A, TC = 0 C, WAVEFORM = CW. Figure 7. Power Out and Drain Efficiency vs. Input Power

7 Typical Performance Characteristics (continued) IMD (dbc)z IM+/- IM5+/ IM7+/ POUT (WPEP)Z VDD = 8 Vdc, IDQ = A, TC = 0 C. FREQUENCY = MHz; FREQUENCY = 880. MHz. Figure 8. -Tone IMD vs. POUT

8 Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. PINS:. DRAIN. GATE. SOURCE PEAK DEVICES XXXX PINS:. DRAIN. GATE. SOURCE PEAK DEVICES XXXX XXXX - 4 Digit Trace Code