UNISONIC TECHNOLOGIES CO., LTD

Size: px
Start display at page:

Download "UNISONIC TECHNOLOGIES CO., LTD"

Transcription

1 UNISONIC TECHNOLOGIES CO., LTD BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS SOT-223 SOT-89 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92 TO-92NL TO-26C TO-26 TO- TO-2 *Pb-free plating product number: 2SD669L/L ORDERING INFORMATION Order Number Pin Assignment Package Normal Lead Free Plating 2 3 Packing 2SD669-x-AA3-R 2SD669L-x-AA3-R SOT-223 B C E Tape Reel 2SD669-x-AB3-R 2SD669L-x-AB3-R SOT-89 B C E Tape Reel 2SD669-x-T6-K 2SD669L-x-T6-K TO-26 E C B Bulk 2SD669-x-T6C-R 2SD669L-x-T6C-R TO-26C E C B Bulk 2SD669-x-T92-B 2SD669L-x-T92-B TO-92 E C B Tape Box 2SD669-x-T92-K 2SD669L-x-T92-K TO-92 E C B Bulk 2SD669-x-T9N-B 2SD669L-x-T9N-B TO-92NL E C B Tape Box 2SD669-x-T9N-K 2SD669L-x-T9N-K TO-92NL E C B Bulk 2SD669-x-T9N-R 2SD669L-x-T9N-R TO-92NL E C B Tape Reel 2SD669-x-TM3-T 2SD669L-x-TM3-T TO- E C B Tube 2SD669-x-TN3-R 2SD669L-x-TN3-R TO-2 B C E Tape Reel 2SD669-x-TN3-T 2SD669L-x-TN3-T TO-2 B C E Tube of 5 Copyright 5 Unisonic Technologies Co., Ltd

2 ORDERING INFORMATION(Cont.) Order Number Pin Assignment Package Normal Lead Free Plating 2 3 Packing -x-aa3-r L-x-AA3-R SOT-223 B C E Tape Reel -x-ab3-r L-x-AB3-R SOT-89 B C E Tape Reel -x-t6-k L-x-T6-K TO-26 E C B Bulk -x-t6c-r L-x-T6C-R TO-26C E C B Bulk -x-t92-b L-x-T92-B TO-92 E C B Tape Box -x-t92-k L-x-T92-K TO-92 E C B Bulk -x-t9n-b L-x-T9N-B TO-92NL E C B Tape Box -x-t9n-k L-x-T9N-K TO-92NL E C B Bulk -x-t9n-r L-x-T9N-R TO-92NL E C B Tape Reel -x-tm3-t L-x-TM3-T TO- E C B Tube -x-tn3-r L-x-TN3-R TO-2 B C E Tape Reel -x-tn3-t L-x-TN3-T TO-2 B C E Tube 2SD669L-x-AB3-R ()Packing Type (2)Package Type (3)Rank (4)Lead Plating () K: Bulk, R: Tape Reel, T: Tube (2) AA3: SOT-223, AB3: SOT-89, T6: TO-26, T 6C: TO-26C, TM3: TO-, TN3: TO-2, T 92:TO-92, T9N: TO-92NL (3) x: refer to Classification of h FE (4) L: Lead Free Plating, Blank: Pb/Sn UNISONIC TECHNOLOGIES CO., LTD 2 of 5

3 ABSOLUTE MAXIMUM RATING (Ta=, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 8 V Collector-Emitter Voltage 2SD669 2 V CEO 6 V Emitter-Base Voltage V EBO 5 V Collector Current I C.5 A Collector Peak Current l C(PEAK) 3 A Collector Power Dissipation SOT W P D Collector Power Dissipation TO-26 W Junction Temperature T J + Storage Temperature T STG -4 ~ + Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Base Breakdown Voltage BV CBO I C=mA, I E= 8 V Collector to Emitter Breakdown 2SD669 2 BV CEO I C=mA, R BE= Voltage 6 V Emitter to Base Breakdown Voltage BV EBO I E=mA, I C= 5 V Collector Cut-off Current I CBO V CB=6V, I E= µa DC Current Gain h FE V CE=5V, I C=mA (Note) 6 32 h FE2 V CE=5V, I C=mA (Note) 3 Collector-Emitter Saturation Voltage V CE(SAT) I C=6mA, I B=mA (Note) V Base-Emitter Voltage V BE V CE=5V, I C=mA (Note).5 V Current Gain Bandwidth Product f T V CE=5V, I C=mA (Note) 4 MHz Output Capacitance C ob V CB=V, I E=, f=mhz 4 pf Note: Pulse test. CLASSIFICATION OF h FE RANK B C D RANGE UNISONIC TECHNOLOGIES CO., LTD 3 of 5

4 TYPICAL CHARACTERISTICS DC Current Transfer Ratio, hfe 3 2 DC Current Transfer Ratio Ta=75 V CE=5V 3 3 3,3, Collector to emitter saturation voltage, VCE(SAT) (V) Collector to Emitter Saturation Voltage I C = I B T C = , Base to Emitter Saturation Voltage, VBE(SAT) (V) Collector Output Capacitance, Cob (pf) IC=IB Base to Emitter Saturation Voltage T C = , 2 5 Collector Output Capacitance vs. Collector to Base Voltage f=mhz I E = Collector to Base Voltage, VCB (V) Gain Bandwidth Product, ft (MHz) Collector Current, IC (A) 3 3, UNISONIC TECHNOLOGIES CO., LTD 4 of Gain Bandwidth Product V CE =5V Ta= Area of Safe Operation DC Operation (TC=)..3 (3.3V,.5A) (2V,.4A) (6V,.2A) 4V,.5A 2SD Collector to Emitter Voltage, V CE (V)

5 TYPICAL CHARACTERISTICS(Cont.) Collector Current, IC (ma) Typical Transfer Characteristics V CE =5V Ta= Base to Emitter Voltage, V BE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.

More information

UNISONIC TECHNOLOGIES CO., LTD MPSA92/93

UNISONIC TECHNOLOGIES CO., LTD MPSA92/93 UNISONIC TECHNOLOGIES CO., LTD /93 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The /93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High

More information

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 5mA. SOT-89 *Pb-free plating

More information

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION

More information

UNISONIC TECHNOLOGIES CO., LTD 2SC5569

UNISONIC TECHNOLOGIES CO., LTD 2SC5569 UNISONIC TECHNOLOGIES CO., LTD SC69 DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation.

More information

UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089

UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 UNISONIC TECHNOLOGIES CO., LTD MMBT5088/ NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION 3 The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. ORDERING INFORMATION Ordering

More information

UNISONIC TECHNOLOGIES CO., LTD 2SC5305

UNISONIC TECHNOLOGIES CO., LTD 2SC5305 UNISONIC TECHNOLOGIES CO., LTD 2SC535 HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High Hfe For Low Base Drive Requirement * Suitable For Half Bridge Light Ballast Applications * Built-In

More information

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION Ordering

More information

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2N441 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. ORDERING

More information

UNISONIC TECHNOLOGIES CO., LTD MMBT4401

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 UNISONIC TECHNOLOGIES CO., LTD MMBT441 NPN GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION The UTC MMBT441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. 2 1

More information

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD MJE3003-V UNISONIC TECHNOLOGIES CO., LTD NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.

More information

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers

More information

UNISONIC TECHNOLOGIES CO., LTD UT3N01Z

UNISONIC TECHNOLOGIES CO., LTD UT3N01Z UNISONIC TECHNOLOGIES CO., LTD UT3N1Z N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The UT3N1Z uses UTC advanced technology to provide excellent R DS(ON), low gate

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It

More information

UNISONIC TECHNOLOGIES CO., LTD UG15N41

UNISONIC TECHNOLOGIES CO., LTD UG15N41 UNISONIC TECHNOLOGIES CO., LTD UG15N41 15A, 410V NPT SERIES N-CHANNEL IGBT DESCRIPTION The UTC UG15N41 is a Logic Level Insulated Gate Bipolar Transistor features monolithic circuitry integrating ESD and

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 4 Amps, 3 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT4N3 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 600V, SMPS N-CHANNEL IGBT DESCRIPTION The UTC is a N-channel IGBT. it uses UTC s advanced technology to provide customers with high input impedance, high switching speed

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 14.7A, 1V (D-S) N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N1 is an N-Channel enhancement MOSFET, it uses UTC s advanced technology to provide customers with a minimum

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and

More information

UNISONIC TECHNOLOGIES CO., LTD UPC817

UNISONIC TECHNOLOGIES CO., LTD UPC817 UNISONIC TECHNOLOGIES CO., LTD UPC817 4 PIN DIP PHOTOTRANSISTOR DESCRIPTION The UTC UPC817 is a 4 pin DIP phototransistor photocoupler, it uses UTC s advanced technology to provide the customers with high

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information

UNISONIC TECHNOLOGIES CO., LTD UT60N03

UNISONIC TECHNOLOGIES CO., LTD UT60N03 UNISONIC TECHNOLOGIES CO., LTD UT60N03 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET DESCRIPTION TO-220 TO-25 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance.

More information

UNISONIC TECHNOLOGIES CO., LTD UT4411

UNISONIC TECHNOLOGIES CO., LTD UT4411 UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information

UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC QS8M11 uses UTC s advanced technology to provide the customers with low voltage

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 3-TERMINAL A POSITIVE ADJUSTABLE REGULATOR DESCRIPTION The UTC is a 3-terminal adjustable positive voltage regulator capable of supplying in excess of 500mA over an output

More information

UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)

UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC 2NNPP06 is a complementary enhancement mode MOSFET H-BRIDGE, it uses

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UTP45N2 UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE DESCRIPTION As N-Channel power MOSFETs the UTP45N2 is designed for use in applications such as switching regulators, switching converters,

More information

UNISONIC TECHNOLOGIES CO., LTD 02NM60 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 02NM60 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 02NM60 Preliminary Power MOSFET 0.2A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 02NM60 is an Super Junction MOSFET Structure and is designed to have better

More information

UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET 25A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 3-TERMINAL 0.1A NEGATIVE VOLTAGE REGULATOR DESCRIPTION The UTC 79LXX family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that

More information

UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,

More information

UNISONIC TECHNOLOGIES CO., LTD TF219 Preliminary JFET

UNISONIC TECHNOLOGIES CO., LTD TF219 Preliminary JFET UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC TF219 is an N-Channel Junction FET, it uses UTC s advanced technology to provide the customers with high voltage

More information

UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,

More information

UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET -80A, -60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTC s advanced technology to provide the

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers planar stripe and DMOS technology.

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD THREE-TERMINAL LOW POWER VOLTAGE REGULATORS DESCRIPTION The UTC series is a set of three-terminal low power voltage regulators implemented in CMOS technology. They are available

More information

UNISONIC TECHNOLOGIES CO., LTD UTT18P10

UNISONIC TECHNOLOGIES CO., LTD UTT18P10 UNISONIC TECHNOLOGIES CO., LTD UTT18P10-100V, -18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 1.5A ADJUSTABLE/FIXED LOW DROPOUT LINEAR REGULATOR DESCRIPTION The UTC UZ186 and UZ186-1.2V, 1.8V, 2.5V, 2.85V, 3.3V and 5V are low dropout three-terminal regulators with

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 3-TERMINALS 0.5A POSITIVE VOLTAGE REGULATOR DESCRIPTION SOT-223 TO-25 The UTC family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications

More information

UNISONIC TECHNOLOGIES CO., LTD 2N7002K

UNISONIC TECHNOLOGIES CO., LTD 2N7002K UNISONIC TECHNOLOGIES CO., LTD 2N7002K 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent R DS(ON), low gate charge and low gate voltages

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 4A, 6V N-CHANNEL POWER MOSFET DESCRIPTION TO-22F TO-22F The UTC 4N6-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching

More information

UNISONIC TECHNOLOGIES CO., LTD UT50N03

UNISONIC TECHNOLOGIES CO., LTD UT50N03 UNISONIC TECHNOLOGIES CO., LTD UT50N03 50A, 30V N-CHANNEL POWER MOSFET FEATURES * R DS(ON) < 14 mω @ V GS = 10 V, I D = 30 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche

More information

UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT

UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The UTC ULN2003R is high-voltage, high-current darlington

More information

UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z

UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z UNISONIC TECHNOLOGIES CO., LTD UTT6NZ 6A, V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6NZ is a N-channel enhancement mode Power FET, it uses UTC s advanced technology to provide customers a minimum

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge,

More information

UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET 8 Amps, -30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4815 is a P-channel enhancement mode power MOSFET using UTC s advanced trench

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC s advanced technology to provide the customers with a minimum on-state resistance,

More information

UNISONIC TECHNOLOGIES CO., LTD 5N60

UNISONIC TECHNOLOGIES CO., LTD 5N60 UNISONIC TECHNOLOGIES CO., LTD 5N60 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching

More information

UNISONIC TECHNOLOGIES CO., LTD LINEAR INTEGRATED CIRCUIT

UNISONIC TECHNOLOGIES CO., LTD LINEAR INTEGRATED CIRCUIT UNISONIC TECHNOLOGIES CO., LTD 62784 LINEAR INTEGRATED CIRCUIT 8CH HIGH VOLTAGE SOURCE DRIVER DESCRIPTION The UTC 62784 consists of eight source current transistor array combination and it is suitable

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD LOW POWER DUAL J-FET OPERATIONAL AMPLIFIER DESCRIPTION The UTC TL062 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: Cob = 2.5 pf (typ.) High Transition

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-Channel enhancement MOSFET, it uses UTC s advanced technology to provide customers with a minimum on-state

More information

UNISONIC TECHNOLOGIES CO., LTD 3N80

UNISONIC TECHNOLOGIES CO., LTD 3N80 UNISONIC TECHNOLOGIES CO., LTD 3N8 3. Amps, 8Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N8 provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable

More information

UNISONIC TECHNOLOGIES CO., LTD UT4422

UNISONIC TECHNOLOGIES CO., LTD UT4422 UNISONIC TECHNOLOGIES CO., LTD UT4422 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation

More information

UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6.0A, 800V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM80 is a Super Junction MOSFET Structure and is designed to have better characteristics,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N50 is an N-channel power MOSFET adopting UTC s advanced technology to provide customers with DMOS, planar stripe technology.

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 4 Amps,6 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N6 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 2A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N6L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low

More information

UNISONIC TECHNOLOGIES CO., LTD UTD408

UNISONIC TECHNOLOGIES CO., LTD UTD408 UNISONIC TECHNOLOGIES CO., LTD UTD408 N-CHANNEL ENHANCEMENT MODE FEATURES * R DS(ON) < 18 mω @ V GS =10V, I D =18A R DS(ON) < 27 mω @ V GS =4.5V, I D =10A * Low capacitance * Optimized gate charge * Fast

More information

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC s advanced technology to provide customers with high switching speed

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching

More information

UNISONIC TECHNOLOGIES CO., LTD UT4413

UNISONIC TECHNOLOGIES CO., LTD UT4413 UNISONIC TECHNOLOGIES CO., LTD UT4413 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD VOLTAGE MODE PWM CONTROL CIRCUIT DESCRIPTION The UTC TL494 incorporates all the functions required in the construction of a pulse-width modulation switching circuit. Designed

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) SC Audio Frequency Amplifier Applications Unit: mm Complementary to SA6 Small collector output capacitance: C ob =.8 pf (typ.) High transition

More information

UNISONIC TECHNOLOGIES CO., LTD UT50N04

UNISONIC TECHNOLOGIES CO., LTD UT50N04 UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high

More information

UNISONIC TECHNOLOGIES CO., LTD 5N60K-MTQ Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 5N60K-MTQ Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 11A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N9 is a N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with planar stripe

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 7A, 700V N-CHANNEL POWER MOSFET TO-220 TO-220F DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 2 CHANNEL LOW-DROPOUT VOLTAGE REGULATOR FEATURES *Dual output: 5.0V/1A, 3.3V/1A. *Output voltage precision of ±2%. *Output consists of PNP power transistor with low-dropout

More information

UNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET 1A, 3V N-CHANNEL POWER MOSFET DESCRIPTION The ULB4132 uses advanced trench technology to provide excellent R DS(ON), low gate charge and

More information

UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET -21A, -40V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized

More information

UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC s advanced technology. This technology allows a minimum on-state resistance,

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: C ob = 2.5 pf (typ.) High

More information

UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC s advanced trench technology

More information

UNISONIC TECHNOLOGIES CO., LTD UFC8N80K

UNISONIC TECHNOLOGIES CO., LTD UFC8N80K UNISONIC TECHNOLOGIES CO., LTD UFC8N80K 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFC8N80K provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable

More information

UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET 20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 20NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics,

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 6N9 UNISONIC TECHNOLOGIES CO., LTD 6.2A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N9 is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide costumers with planar

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 3A ADJUSTABLE/FIXED LOW DROPOUT LINEAR REGULATOR TO-220 DESCRIPTION The UTC -xx series are low dropout three-terminal regulators with 3A output current capability. These

More information

UNISONIC TECHNOLOGIES CO., LTD MC4556

UNISONIC TECHNOLOGIES CO., LTD MC4556 UNISONIC TECHNOLOGIES CO., LTD MC4556 DUAL OPERATIONAL AMPLIFIER DESCRIPTION The UTC MC4556 integrated circuit is a high-gain, high output current dual operational amplifier capable of driving 70mA into

More information

UNISONIC TECHNOLOGIES CO., LTD 78DXX

UNISONIC TECHNOLOGIES CO., LTD 78DXX UNISONIC TECHNOLOGIES CO., LTD 78DXX 3-TERMINALS 0.5A POSITIVE VOLTAGE REGULATOR DESCRIPTION The UTC 78DXX family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications

More information

UNISONIC TECHNOLOGIES CO., LTD CD4069

UNISONIC TECHNOLOGIES CO., LTD CD4069 UNISONIC TECHNOLOGIES CO., LTD CD4069 INVERTER CIRCUITS DESCRIPTION The UTC CD4069 consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating

More information

UNISONIC TECHNOLOGIES CO., LTD UT100N03

UNISONIC TECHNOLOGIES CO., LTD UT100N03 UNISONIC TECHNOLOGIES CO., LTD UT00N03 00A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT00N03 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD466 provides excellent R DS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary

More information