UNISONIC TECHNOLOGIES CO., LTD
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1 UNISONIC TECHNOLOGIES CO., LTD BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS SOT-223 SOT-89 * Low frequency power amplifier complementary pair with UTC 2SB649/A TO-92 TO-92NL TO-26C TO-26 TO- TO-2 *Pb-free plating product number: 2SD669L/L ORDERING INFORMATION Order Number Pin Assignment Package Normal Lead Free Plating 2 3 Packing 2SD669-x-AA3-R 2SD669L-x-AA3-R SOT-223 B C E Tape Reel 2SD669-x-AB3-R 2SD669L-x-AB3-R SOT-89 B C E Tape Reel 2SD669-x-T6-K 2SD669L-x-T6-K TO-26 E C B Bulk 2SD669-x-T6C-R 2SD669L-x-T6C-R TO-26C E C B Bulk 2SD669-x-T92-B 2SD669L-x-T92-B TO-92 E C B Tape Box 2SD669-x-T92-K 2SD669L-x-T92-K TO-92 E C B Bulk 2SD669-x-T9N-B 2SD669L-x-T9N-B TO-92NL E C B Tape Box 2SD669-x-T9N-K 2SD669L-x-T9N-K TO-92NL E C B Bulk 2SD669-x-T9N-R 2SD669L-x-T9N-R TO-92NL E C B Tape Reel 2SD669-x-TM3-T 2SD669L-x-TM3-T TO- E C B Tube 2SD669-x-TN3-R 2SD669L-x-TN3-R TO-2 B C E Tape Reel 2SD669-x-TN3-T 2SD669L-x-TN3-T TO-2 B C E Tube of 5 Copyright 5 Unisonic Technologies Co., Ltd
2 ORDERING INFORMATION(Cont.) Order Number Pin Assignment Package Normal Lead Free Plating 2 3 Packing -x-aa3-r L-x-AA3-R SOT-223 B C E Tape Reel -x-ab3-r L-x-AB3-R SOT-89 B C E Tape Reel -x-t6-k L-x-T6-K TO-26 E C B Bulk -x-t6c-r L-x-T6C-R TO-26C E C B Bulk -x-t92-b L-x-T92-B TO-92 E C B Tape Box -x-t92-k L-x-T92-K TO-92 E C B Bulk -x-t9n-b L-x-T9N-B TO-92NL E C B Tape Box -x-t9n-k L-x-T9N-K TO-92NL E C B Bulk -x-t9n-r L-x-T9N-R TO-92NL E C B Tape Reel -x-tm3-t L-x-TM3-T TO- E C B Tube -x-tn3-r L-x-TN3-R TO-2 B C E Tape Reel -x-tn3-t L-x-TN3-T TO-2 B C E Tube 2SD669L-x-AB3-R ()Packing Type (2)Package Type (3)Rank (4)Lead Plating () K: Bulk, R: Tape Reel, T: Tube (2) AA3: SOT-223, AB3: SOT-89, T6: TO-26, T 6C: TO-26C, TM3: TO-, TN3: TO-2, T 92:TO-92, T9N: TO-92NL (3) x: refer to Classification of h FE (4) L: Lead Free Plating, Blank: Pb/Sn UNISONIC TECHNOLOGIES CO., LTD 2 of 5
3 ABSOLUTE MAXIMUM RATING (Ta=, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 8 V Collector-Emitter Voltage 2SD669 2 V CEO 6 V Emitter-Base Voltage V EBO 5 V Collector Current I C.5 A Collector Peak Current l C(PEAK) 3 A Collector Power Dissipation SOT W P D Collector Power Dissipation TO-26 W Junction Temperature T J + Storage Temperature T STG -4 ~ + Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Base Breakdown Voltage BV CBO I C=mA, I E= 8 V Collector to Emitter Breakdown 2SD669 2 BV CEO I C=mA, R BE= Voltage 6 V Emitter to Base Breakdown Voltage BV EBO I E=mA, I C= 5 V Collector Cut-off Current I CBO V CB=6V, I E= µa DC Current Gain h FE V CE=5V, I C=mA (Note) 6 32 h FE2 V CE=5V, I C=mA (Note) 3 Collector-Emitter Saturation Voltage V CE(SAT) I C=6mA, I B=mA (Note) V Base-Emitter Voltage V BE V CE=5V, I C=mA (Note).5 V Current Gain Bandwidth Product f T V CE=5V, I C=mA (Note) 4 MHz Output Capacitance C ob V CB=V, I E=, f=mhz 4 pf Note: Pulse test. CLASSIFICATION OF h FE RANK B C D RANGE UNISONIC TECHNOLOGIES CO., LTD 3 of 5
4 TYPICAL CHARACTERISTICS DC Current Transfer Ratio, hfe 3 2 DC Current Transfer Ratio Ta=75 V CE=5V 3 3 3,3, Collector to emitter saturation voltage, VCE(SAT) (V) Collector to Emitter Saturation Voltage I C = I B T C = , Base to Emitter Saturation Voltage, VBE(SAT) (V) Collector Output Capacitance, Cob (pf) IC=IB Base to Emitter Saturation Voltage T C = , 2 5 Collector Output Capacitance vs. Collector to Base Voltage f=mhz I E = Collector to Base Voltage, VCB (V) Gain Bandwidth Product, ft (MHz) Collector Current, IC (A) 3 3, UNISONIC TECHNOLOGIES CO., LTD 4 of Gain Bandwidth Product V CE =5V Ta= Area of Safe Operation DC Operation (TC=)..3 (3.3V,.5A) (2V,.4A) (6V,.2A) 4V,.5A 2SD Collector to Emitter Voltage, V CE (V)
5 TYPICAL CHARACTERISTICS(Cont.) Collector Current, IC (ma) Typical Transfer Characteristics V CE =5V Ta= Base to Emitter Voltage, V BE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5
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UNISONIC TECHNOLOGIES CO., LTD 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
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UNISONIC TECHNOLOGIES CO., LTD 11A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N9 is a N-channel enhancement mode Power FET using UTC s advanced technology to provide customers with planar stripe
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UNISONIC TECHNOLOGIES CO., LTD 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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UNISONIC TECHNOLOGIES CO., LTD 7A, 700V N-CHANNEL POWER MOSFET TO-220 TO-220F DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
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UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
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UNISONIC TECHNOLOGIES CO., LTD 2 CHANNEL LOW-DROPOUT VOLTAGE REGULATOR FEATURES *Dual output: 5.0V/1A, 3.3V/1A. *Output voltage precision of ±2%. *Output consists of PNP power transistor with low-dropout
More informationUNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET 1A, 3V N-CHANNEL POWER MOSFET DESCRIPTION The ULB4132 uses advanced trench technology to provide excellent R DS(ON), low gate charge and
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UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET -21A, -40V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized
More informationUNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
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UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
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UNISONIC TECHNOLOGIES CO., LTD 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC s advanced technology. This technology allows a minimum on-state resistance,
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: C ob = 2.5 pf (typ.) High
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UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC s advanced trench technology
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UNISONIC TECHNOLOGIES CO., LTD UFC8N80K 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFC8N80K provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
More informationUNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET 20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 20NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics,
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6N9 UNISONIC TECHNOLOGIES CO., LTD 6.2A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N9 is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide costumers with planar
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UNISONIC TECHNOLOGIES CO., LTD 3A ADJUSTABLE/FIXED LOW DROPOUT LINEAR REGULATOR TO-220 DESCRIPTION The UTC -xx series are low dropout three-terminal regulators with 3A output current capability. These
More informationUNISONIC TECHNOLOGIES CO., LTD MC4556
UNISONIC TECHNOLOGIES CO., LTD MC4556 DUAL OPERATIONAL AMPLIFIER DESCRIPTION The UTC MC4556 integrated circuit is a high-gain, high output current dual operational amplifier capable of driving 70mA into
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UNISONIC TECHNOLOGIES CO., LTD 78DXX 3-TERMINALS 0.5A POSITIVE VOLTAGE REGULATOR DESCRIPTION The UTC 78DXX family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications
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UNISONIC TECHNOLOGIES CO., LTD CD4069 INVERTER CIRCUITS DESCRIPTION The UTC CD4069 consists of six inverter circuits and is manufactured using complementary MOS (CMOS) to achieve wide power supply operating
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UNISONIC TECHNOLOGIES CO., LTD UT00N03 00A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UT00N03 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate
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UNISONIC TECHNOLOGIES CO., LTD DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD466 provides excellent R DS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary
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