Power Transistor (80V, 1A)

Transcription

1 Power Transistor (80V, A) SD898 / SD733 / SD768S / SD863 SD898 / SD733 / SD768S / SD863!Features ) High VCEO, VCEO=80V ) High IC, IC=A (DC) 3) Good hfe linearity 4) Low VCE (sat) ) Complements the SB60 / SB4 / SB8!External dimensions (Unit : mm) SD ± ± ±0. () ±0. () (3) 0.4±0. 0.±0. 0.4±0..±0..±0. 3.0± !Structure Epitaxial planer type NPN silicon transistor ROHM : MPT3 EIAJ : SC-6 SD733 Abbreviated symbol : DF SD768S () Base () Collector (3) Emitter.±0.3 6.± C ±0. 3±0. 4±0. 3Min. ± ±0..3±0. 0.6± ±0. 0.±0..0±0. (Min.) () () (3) () () (3) Taping specifications ROHM : CPT3 EIAJ : SC-63 () Base () Collector (3) Emitter ROHM : SPT EIAJ : SC-7 () Emitter () Collector (3) Base SD ±0..±0. 4.4±0. 0.6Max..0 0.±0. 4.±0. () () (3) ±0. Taping specifications ROHM : ATV () Emitter () Collector (3) Base /4

2 SD898 / SD733 / SD768S / SD863!Absolute maximum ratings () Parameter Symbol Limits Unit Collector-base voltage VCBO 0 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO V Collector current Collector power dissipation SD898 SD733 SD768S SD863 IC A (DC) A (Pulse) Junction temperature Tj 0 C Storage temperature Tstg to +0 C PC Pw=0ms, duty= / Printed circuit board.7mm thick, collector copper plating cm or larger. 3 hen mounted on a mm ceramic board. 3 (Tc= C)!Electrical characteristics () Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance SD863 SD733, SD898 SD768S Measured using pulse current Symbol BVCBO BVCEO BVEBO ICBO IEBO hfe VCE(sat) ft Cob Min Typ. Max. Unit Conditions 390 V IC=0µA V V µa µa V 00 MHz 0 pf IC=mA IE=0µA VCB=00V VEB=4V VCE=3V, IC=0.A IC/IB=00mA/0mA VCE=0V, IE=0mA, f=00mhz VCB=0V, IE=0A, f=mhz /4

3 SD898 / SD733 / SD768S / SD863!Packaging specifications and hfe Type SD898 SD733 SD768S SD863 Package Taping Code T00 TL TP hfe Basic ordering unit (pieces) PQR PQR QR R TV 00 hfe values are classified as follows : Item P Q R hfe 8~80 0~70 80~390!Electrical characteristic curves VCE=V BASE TO EMITTER VOLTAGE : VBE (V) Fig. Grounded emitter propagation characteristics mA ma 4mA ma 3mA ma 0 IB=0mA Fig. Grounded emitter output characteristics DC CURRENT GAIN : hfe Fig.3 DC current gain vs. collector current VCE=3V V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=0/ 0/ Fig.4 Collector-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : ft (MHz) EMITTER CURRENT : IE (ma) VCE=V Fig. Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pf) EMITTER INPUT CAPACITANCE : Cib (pf) f=mhz IE=0A Ic=0A COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 3/4

4 SD898 / SD733 / SD768S / SD863 0 Ic Max (Pulse) 00m 00m 00m 0m DC Pw=00mS Pw=0mS Single non-repetitive pulse 0m 0m m m m m 00m 00m 0m 0m 0m m Ic Max (Pulse) DC Pw=00mS Pw=0mS Single non-repetitive pulse m m Fig.7 Safe operating area (SD863) Fig.8 Safe operating area (SD898) 4/4

5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex (Item 6) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of eapons of Mass Destruction. Appendix-Rev.0