Switching (60V, 300mA)

Transcription

1 Switching (60, 300mA)!Features ) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4). 5) Easily designed drive circuits. 6) Easy to use in parallel.!external dimeio (Units : mm) 0.4 (3) () (2).9 2.9!Structure Silicon N-channel MOSFET traistor ROHM : SST3 EIAJ : SOT ~0. 0.2Min. 0.5 Each lead has same dimeio Abbreviated symbol : RKS () Source (2) Gate (3) Drain!Equivalent circuit (3) (2) Gate Protection Diode. () A protection diode has been built in between the gate and the source to protect agait static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded.!absolute maximum ratings (Ta=) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Continuous Drain reverse current Total power dissipation Channel temperature Storage temperature DSS GSS ID IDP IDR IDRP PD 2 Pw 0µs, Duty cycle % 2 When using inch glass epoxy board. Symbol Limits Unit 60 ± ma ma mw Tch 50 C Tstg 55~+50 C A A

2 !Electrical characteristics (Ta=) Parameter Symbol Min. Typ. Max. Unit Test Conditio Gate leakage current IGSS ±0 µa GS=±20, DS=0 Drain-source breakdown voltage (BR) DSS 60 ID=0µA, GS=0 Drain cutoff current IDSS µa DS=60, GS=0 Gate threshold voltage GS (th) 2.5 DS=0, ID=mA Drain-source on-state resistance RDS (on) Ω ID=300mA, GS=0 ID=300mA, GS=4 Forward trafer admittance l Yfs l 200 ms DS=0, ID=300mA Input capacitance Output capacitance Reverse trafer capacitance Ciss Coss Crss DS=0 GS=0 f=mhz Turn-on delay time Rise time Turn-off delay time Fall time td (on) 2 tr 2 td (off) 2 tf ID=50mA, DD GS=0 RL=200Ω RGS=0Ω 30 Total gate charge Gate-source charge Gate-drain charge Qg 2 Qgs 2 Qgd DD 30 GS=0 ID=200mA PW 300µs, Duty cycle % 2!Packaging specificatio Type Package Code Basic ordering unit (pieces) Taping T6 3000!Electrical characteristic curves GS=3 0.2 Ta= DRAIN-SOURCE OLTAGE : DS () Fig. Typical output characteristics 0. DS=0 Ta= GATE-SOURCE OLTAGE : GS () Fig.2 Typical trafer characteristics GATE THRESHOLD OLTAGE : GS (th) () DS=0 ID=mA CHANNEL TEMPERATURE : Tch ( C) Fig.3 Gate threshold voltage vs. channel temperature

3 Ta= 0. GS= Ta= 0. GS= mA ID=300mA Ta= GATE-SOURCE OLTAGE : GS () Fig.4 Static drain-source on-state resistance vs. drain current ( Ι ) Fig.5 Static drain-source on-state resistance vs. drain current ( ΙΙ ) Fig.6 Static drain-source on-state resistance vs. gate-source voltage ID=300mA 50mA GS= CHANNEL TEMPERATURE : Tch ( C) Fig.7 Static drain-source on-state resistance vs. channel temperature REERSE DRAIN CURRENT : IDR (A) 0. GS=0 Ta= SOURCE-DRAIN OLTAGE : SD () Fig.8 Reverse drain current vs. source-drain voltage ( Ι ) REERSE DRAIN CURRENT : IDR (A) 0 0. GS=0 0 Ta= SOURCE-DRAIN OLTAGE : SD () Fig.9 Reverse drain current vs. source-drain voltage ( ΙΙ ) FORWARD TRANSFER ADMITTANCE : Yfs (S) 0. Ta= Ta= GS= Fig.0 Forward trafer admittance vs. drain current CAPACITANCE : C () 00 0 Crss Ciss Coss Ta= f=mhz GS= DRAIN-SOURCE OLTAGE : DS () Fig. Typical capacitance vs. drain-source voltage SWITCHING TIME : t () td (on) Ta= DD=30 GS=0 RG=0Ω Fig.2 Switching characteristics (See Figures 3 and 4 for the measurement circuit and resultant waveforms) tr tf td (off)

4 !Switching characteristics measurement circuit Pulse width GS ID DS GS 50% 0% 50% RG D.U.T. RL DS 0% 0% DD td (on) tr td (off) tf ton toff Fig.3 Switching time measurement circuit Fig.4 Switching time waveforms

5 Appendix Notes No technical content pages of this document may be reproduced in any form or tramitted by any mea without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specificatio for the product described in this document are for reference only. Upon actual use, therefore, please request that specificatio to be separately delivered. Application circuit diagrams and circuit cotants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditio when designing circuits and deciding upon circuit cotants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustratio of such devices and not as the specificatio for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or licee to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communicatio devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical itruments, traportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to coult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex (Item 6) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapo of Mass Destruction. Appendix-Rev.0