2.5V Drive Nch+Pch MOSFET

Transcription

1 2.5V Drive Nch+Pch MOSFET Sucture Silicon P-channel MOSFET Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT6 Features ) The combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage drive (2.5V). pin mark (6) () (5) 0.4 (4) (2) (3) MX bbreviated symbol : M04 0~0. 0.3~0.6 Each lead has same dimensions pplications Load switch, inverter Packaging specifications Package Type Code Basic ordering unit (pieces) Taping TR 3000 Equivalent circuit (6) (5) (4) 2 2 bsolute maximum ratings () Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature Pw µs, Duty cycle % 2 Mounted on a ceramic board Continuous Continuous Symbol VDSS VGSS ID IDP IS ISP 2 PD Tch Tstg Limits Nchannel Pchannel ±2 ±2 ±.5 ±.5 ±6.0 ± to +50 Unit V V W / TOTL W / ELEMENT C C () (2) (3) ESD PROTECTION DIODE 2 BODY DIODE () Tr (Nch) Source (2) Tr (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr (Nch) Drain Thermal resistance Parameter Symbol Limits Unit Channel to ambient 0 C / W / TOTL Rth (ch-a) 39 C / W / ELEMENT Mounted on a ceramic board Rev.B /5

2 Elecical characteristics () <Tr. N-ch MOSFET> Parameter Gate-source leakage Symbol IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward ansfer admittance Input capacitance Output capacitance Reverse ansfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) Yfs Qg Qgs Qgd Min. Typ. Max. ± Unit µ Conditions VGS=±2V / VDS=0V 30 V ID=m / µ VDS=30V / V VDS=V / ID=m ID=.5 / VGS=4.5V mω ID=.5 / VGS=4.0V ID=.0 / VGS=2.5V.0 S VDS=V / ID=.0 80 pf VDS=V 25 pf 5 pf f=mhz 7 ns ID=, VDD 5V 8 ns VGS=4.5V 5 ns RL=5Ω / RG=Ω 5 ns.6 nc VDD 5V RL=Ω 0.5 nc VGS=4.5V RG=Ω 0.9 nc ID=.5 Body diode characteristics (Source-Drain) <Tr. N-ch MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD.2 V IS=3.2 / Rev.B 2/5

3 Elecical characteristics () <Tr2. P-ch MOSFET> Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward ansfer admittance Input capacitance Output capacitance Reverse ansfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge RDS (on) Yfs Qg Qgs Qgd Min. Typ. Max. Unit Conditions ± µ VGS= ±2V / VDS=0V 20 V ID= m / µ VDS= 20V / V VDS= V / ID= m ID=.5 / VGS= 4.5V mω ID=.5 / VGS= 4.0V ID= 0.75 / VGS= 2.5V.0 S VDS= V / ID= pf VDS= V 40 pf 35 pf f=mhz ns ID= 0.75, VDD 5V 2 ns VGS= 4.5V 45 ns RL=20Ω / RG=Ω 20 ns 3.0 nc VDD 5V RL=Ω 0.8 nc VGS= 4.5V RG=Ω 0.85 nc ID=.5 Body diode characteristics (Source-Drain) <Tr2. P-ch MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD.2 V IS= 0.75 / Rev.B 3/5

4 N-ch Elecical characteristic curves CPCITNCE : C (pf) 00 0 f=mhz SWITCHING TIME : t (ns) 00 0 VDD=5V VGS=4.5V RG=Ω GTE-SOURCE VOLTGE : VGS (V) VDD=5V ID=.5 RG=Ω DRIN-SOURCE VOLTGE : VDS () TOTL GTE CHRGE : Qg (nc) Fig. Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics Ta=25 C VDS=V GTE-SOURCE VOLTGE : VGS (V) Fig.4 Typical Transfer Characteristics ID= ID= GTE-SOURCE VOLTGE : VGS (V) Fig.5 Static Drain-Source vs. Gate-Source Voltage SOURCE CURRENT : Is () 0. Ta=25 C SOURCE-DRIN VOLTGE : VSD (V) Fig.6 Source Current vs. Source-Drain Voltage Ta=25 C VGS=4.5V Fig.7 Static Drain-Source vs. Drain Current (Ι) Ta=25 C VGS=4.0V Fig.8 Static Drain-Source vs. Drain Current (ΙΙ) Ta=25 C VGS=2.5V Fig.9 Static Drain-Source vs. Drain Current (ΙΙΙ) Rev.B 4/5

5 P-ch Elecical characteristic curves CPCITNCE : C (pf) 00 0 f=mhz SWITCHING TIME : t (ns) 00 0 VDD= 5V VGS= 4.5V RG=Ω GTE-SOURCE VOLTGE : VGS (V) VDD= 5V ID=.5 RG=Ω DRIN-SOURCE VOLTGE : VDS (V) TOTL GTE CHRGE : Qg (nc) Fig. Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics Ta=25 C VDS= V GTE-SOURCE VOLTGE : VGS (V) Fig.4 Typical Transfer Characteristics ID=.5 ID= GTE-SOURCE VOLTGE : VGS (V) Fig.5 Static Drain-Source vs. Gate-Source Voltage SOURCE CURRENT : IS () SOURCE-DRIN VOLTGE : VSD (V) Fig.6 Source Current vs. Source-Drain Voltage Ta=25 C VGS= 4.5V 0. Fig.7 Static Drain-Source vs. Drain Current (Ι) Ta=25 C VGS= 4V 0. Fig.8 Static Drain-Source vs. Drain Current (ΙΙ) Ta=25 C VGS= 2.5V 0. Fig.9 Static Drain-Source vs. Drain Current (ΙΙΙ) Rev.B 5/5

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