4V Drive Nch MOSFET. Data Sheet RSJ300N10. 1/ Rev.A. Structure Silicon N-channel MOSFET. Dimensions (Unit : mm)
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1 4V Drive Nch MOSFET RSJ3N Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS Features ) Low on-resistance. 2) Built-in G-S Protection Diode () (2) (3) Application Switching Packaging specifications Inner circuit Type Package Code Taping TL Basic ordering unit (pieces) RSJ3N 2 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Drain-source voltage V DSS V Gate-source voltage V GSS 2 V Drain current Continuous I D * 3 A I DP *2 6 A Source current Continuous I S * 3 A (Body Diode) I SP *2 6 A Power dissipation P D *3 5 W Channel temperature Tch 5 C Range of storage temperature Tstg 55 to 5 C * Limited only by maximum temperature allowed. *2 Pw s, Duty cycle % *3 T c =25 () Gate (2) Drain (3) Source () (2) (3) ESD PROTECTION DIODE 2 BODY DIODE Thermal resistance Symbol Limits Unit Channel to Case Rth (ch-c)* 2.5 C / W *Mounted on a ceramic board. / Rev.A
2 RSJ3N Electrical characteristics (Ta = 25 C) Symbol Min. Typ. Max. Unit Gate-source leakage I GSS - - A V GS = 2V, V DS =V Drain-source breakdown voltage V (BR)DSS - - V I D =ma, V GS =V Zero gate voltage drain current I DSS - - A V DS =V, V GS =V Gate threshold voltage V GS (th) V V DS =V, I D =ma Input capacitance C iss pf V DS =25V Output capacitance C oss pf V GS =V Reverse transfer capacitance C rss pf f=mhz Turn-on delay time t d(on) * ns I D =5A, V DD 5V Rise time t r * ns V GS =V Turn-off delay time t d(off) * ns R L =3.3 Fall time t f * ns R G = Total gate charge Q g * nc I D =3A, V DD 5V Gate-source charge Q gs * nc V GS =V Gate-drain charge Q gd * nc * Conditions I D =5A, V GS =V Static drain-source on-state R * m I D =5A, V GS =4.5V resistance DS (on) I D =5A, V GS =4.V Forward transfer admittance l Y fs l* S I D =5A, V DS =V Body diode characteristics (Source-Drain) (Ta = 25 C) Symbol Min. Typ. Max. Unit Conditions Forward Voltage V SD * V I s =3A, V GS =V * 2/ Rev.A
3 . RSJ3N Electrical characteristic curves (Ta=25 C) Fig. Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) V GS = V V GS = 4.V 25 V GS = V V GS = 4.V V GS = 3.V DRAIN CURRENT : I D [A] 2 5 V GS = 3.V DRAIN CURRENT : I D [A] 2 5 V GS = 2.5V 5 V GS = 2.5V Fig.3 Typical Transfer Characteristics Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) DRAIN CURRENT : I D [A].. V DS = V T a =25 C V GS = 4.V V GS = V. 2 3 GATE-SOURCE VOLTAGE : V GS [V].. Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) V GS = V T a =25 C T a =25 C.. 3/ Rev.A
4 RSJ3N Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current V GS = 4.V T a =25 C. FORWARD TRANSFER ADMITTANCE : Yfs [S] V DS = V T a =25 C... SOURCE CURRENT : Is [A]. V GS =V Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage T a =25 C RESISTANCE : R DS ( ON )[mω] Fig. Static Drain-Source On-State Resistance vs. Gate Source Voltage I D = 5.A I D = 3.A..5.5 SOURCE-DRAIN VOLTAGE : V SD [V] GATE-SOURCE VOLTAGE : V GS [V] Fig. Switching Characteristics Fig.2 Dynamic Input Characteristics SWITCHING TIME : t [ns] t d(on) t d(off) t f t r V DD =5V V GS =V R G =Ω.. GATE-SOURCE VOLTAGE : V GS [V] V 2 DD = 5V I D = 3A R G =Ω TOTAL GATE CHARGE : Qg [nc] 4/ Rev.A
5 RSJ3N Fig.3 Typical Capacitance vs. Drain-Source Voltage Fig.4 Maximum Safe Operating Aera C iss Operation in this area is limited by R DS(ON) (V GS =V) CAPACITANCE : C [pf] f=mhz V GS =V C rss C oss.. DRAIN CURRENT : I D (A). P W =us P W =ms P W = ms DC operation T C =25 C Single Pulse.. Fig.5 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t)... T a = 25 C Single Pulse Rth(ch-a)(t) = r(t) Rth(ch-a) Rth(ch-a) = 65.8 C/W..... PULSE WIDTH : Pw(s) 5/ Rev.A
6 RSJ3N Measurement circuits Pulse width ID RL VDS % 5% 9% 5% D.U.T. VDS % % RG VDD 9% 9% td(on) tr td(off) tf ton toff Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms ID RL VDS VG Qg IG(Const.) D.U.T. VDD Qgs Qgd Charge Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform 6/ Rev.A
7 Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System R2A
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