2.5V Drive Nch MOSFET

Transcription

1 2.5V Drive Nch MOSFET RK7002BM Datasheet Structure Silicon N-channel MOSFET Dimensions (Unit : mm) SST3 <SOT-23> Features ) High speed switing. 2) Small package(sst3). 3) Low voltage drive(2.5v drive). Abbreviated symbol : RKU Application Switching Packaging specifications Package Taping Type Code T6 Basic ordering unit (pieces) 3000 RK7002BM Inner circuit (2) (3) 2 Absolute maximum ratings (Ta = 25 C) Symbol Limits Unit Drain-source voltage V DSS 60 V Gate-source voltage V GSS 20 V Drain current Continuous I D 250 ma I DP * A Source current Continuous I S 50 ma (Body Diode) I SP * A Total power dissipation P D *2 0.2 W Channel temperature Tch 50 C Range of storage temperature Tstg 55 to +50 C * Pw 0 s, Duty cycle % *2 Each terminal mounted on a recommended land. () ESD PROTECTION DIODE 2 BODY DIODE () SOURCE (2) GATE (3) DRAIN Thermal resistance Symbol Limits Unit Channel to ambient Rth (ch-a)* 625 C / W * Each terminal mounted on a recommended land. 204 ROHM Co., Ltd. All rights reserved. / Rev.B

2 Electrical characteristics (Ta = 25 C) Symbol Min. Typ. Max. Unit Gate-source leakage I GSS A V GS = 20V, V DS =0V Drain-source breakdown voltage V (BR)DSS V I D =ma, V GS =0V Zero gate voltage drain current I DSS - - A V DS =60V, V GS =0V Gate threshold voltage V GS (th) V V DS =0V, I D =ma I D =250mA, V GS =0V I D =250mA, V GS =4.5V I D =250mA, V GS =4.0V I D =0mA, V GS =2.5V Forward transfer admittance l Y fs l * S I D =250mA, V DS =0V Input capacitance C iss pf V DS =25V Output capacitance C oss pf V GS =0V Reverse transfer capacitance C rss 2 - pf f=mhz Turn-on delay time t d(on) * ns I D =00mA, V DD 30V Rise time t r * ns V GS =0V Turn-off delay time t d(off) * ns R L =300 Fall time t f * ns R G =0 * Static drain-source on-state resistance * R DS (on) Conditions Body diode characteristics (Source-Drain) (Ta = 25 C) Symbol Min. Typ. Max. Unit Conditions Forward voltage V SD * V I s =250mA, V GS =0V * 204 ROHM Co., Ltd. All rights reserved. 2/ Rev.B

3 Electrical characteristics curves DRAIN CURRENT : I D [A] Ta= 25 C V GS = 0V V GS = 2.8V DRAIN CURRENT : I D [A] V GS = 0V Ta= 25 C V GS = 2.8V DRAIN CURRENT : I D [A] V DS = 0V Ta=25 C DRAIN-SOURCE VOLTAGE : V DS [V] DRAIN-SOURCE VOLTAGE : V DS [V] GATE-SOURCE VOLTAGE : V GS [V] Fig. Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics 00 0 Ta= 25 C V GS = 0V V GS = 0V Ta=25 C Ta=25 C Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 00 0 Ta=25 C Ta=25 C FORWARD TRANSFER ADMITTANCE : Yfs [S] V DS = 0V Ta=25 C Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.9 Forward Transfer Admittance vs. Drain Current 204 ROHM Co., Ltd. All rights reserved. 3/ Rev.B

4 REVERSE DRAIN CURRENT : Is [A] 0.0 V GS =0V Ta=25 C RESISTANCE : R DS (ON)[ ] I D = 0.0A I D = 0.25A SWITCHING TIME : t [ns] t d(on) t d(off) 0.0 t f V DD = 30V V GS =0V R G =0 t r SOURCE-DRAIN VOLTAGE : V SD [V] Fig.0 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : V GS [V] Fig. Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.2 Switching Characteristics 00 CAPACITANCE : C [pf] 0 f=mhz Crss Ciss Coss DRAIN-SOURCE VOLTAGE : V DS [V] Fig.3 Typical Capacitance vs. Drain-Source Voltage 204 ROHM Co., Ltd. All rights reserved. 4/ Rev.B

5 Measurement circuits Pulse width VGS ID RL VDS VGS 0% 50% 90% 50% D.U.T. VDS 0% 0% RG VDD 90% 90% td(on) tr td(off) tf ton toff Fig.- Switching time measurement circuit Fig.-2 Switching waveforms Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 204 ROHM Co., Ltd. All rights reserved. 5/ Rev.B

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