HSMT8. Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 12 Switching Basic ordering unit (pcs) 3000

Transcription

1 RQ3E180AJ Nch 30V 18A Middle Power MOSFET Datasheet V DSS R DS(on) (Max.) 30V 4.5mΩ I D ±30A P D 2W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant loutline HSMT8 linner circuit lpackaging specifications Packing Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 12 Switching Basic ordering unit (pcs) 3000 labsolute maximum ratings (T a = 25 C) Taping code Marking TB E180AJ Parameter Symbol Value Unit Drain - Source voltage V DSS 30 V T c = 25 C I *4 D ±30 A Continuous drain current T a = 25 C I D ±18 A Pulsed drain current I D,pulse *1 ±72 A Gate - Source voltage V GSS ±12 V Avalanche energy, single pulse E AS * mj Avalanche current I *2 AS 18 A P *3 D 2 W Power dissipation P *4 D 30 W Junction temperature T j 150 Range of storage temperature T stg -55 to ROHM Co., Ltd. All rights reserved. 1/ Rev.002

2 lthermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient R *3 thja /W Thermal resistance, junction - case R *4 thjc /W lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = 0V, I D = 1mA V Breakdown voltage temperature coefficient Zero gate voltage drain current ΔV (BR)DSS I D = 1mA ΔT j referenced to mv/ I DSS V DS = 24V, V GS = 0V μa Gate - Source leakage current I GSS V GS = ±12V, V DS = 0V - - ±100 na Gate threshold voltage V GS(th) V DS = V GS, I D = 11mA V Gate threshold voltage temperature coefficient Static drain - source on - state resistance ΔV GS(th) I D = 1mA ΔT j referenced to 25 R DS(on) * mv/ V GS = 4.5V, I D = 18A V GS = 2.5V, I D = 18A mω Forward Transfer Admittance Y fs *5 V DS = 5V, I D = 18A S *1 Pw 10μs, Duty cycle 1% *2 L 100uH, V DD = 15V, R G = 25Ω, STARTING T ch = 25 Fig.3-1,3-2 *3 Mounted on a ceramic boad ( mm) *4 Tc=25 *5 Pulsed 2015 ROHM Co., Ltd. All rights reserved. 2/ Rev.002

3 lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance C iss V GS = 0V Output capacitance C oss V DS = 15V Reverse transfer capacitance C rss f = 1MHz Turn - on delay time t *5 d(on) V DD 15V,V GS = 4.5V Rise time t *5 r I D = 9A Turn - off delay time t *5 d(off) R L 1.67Ω Fall time t *5 f R G = 10Ω Unit pf ns lgate charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Q *5 g V DD 15V, Gate - Source charge Q *5 gs I D = 18A, Gate - Drain charge Q *5 gd V GS = 4.5V Unit nc lbody diode electrical characteristics (Source-Drain) (T a = 25 C) Parameter Symbol Conditions Body diode continuous forward current Body diode pulse current I S *1 T a = 25 Values Min. Typ. Max. Unit A I SP * A Forward voltage V SD *5 V GS = 0V, I S = 1.67A V 2015 ROHM Co., Ltd. All rights reserved. 3/ Rev.002

4 lelectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power dissipation 2015 ROHM Co., Ltd. All rights reserved. 4/ Rev.002

5 lelectrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature 2015 ROHM Co., Ltd. All rights reserved. 5/ Rev.002

6 lelectrical characteristic curves Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Transconductance vs. Drain Current 2015 ROHM Co., Ltd. All rights reserved. 6/ Rev.002

7 lelectrical characteristic curves Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 2015 ROHM Co., Ltd. All rights reserved. 7/ Rev.002

8 lelectrical characteristic curves Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) 2015 ROHM Co., Ltd. All rights reserved. 8/ Rev.002

9 lelectrical characteristic curves Fig.17 Typical Capacitance vs. Drain - Source Voltage Fig.18 Switching Characteristics Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain Voltage 2015 ROHM Co., Ltd. All rights reserved. 9/ Rev.002

10 lmeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 AVALANCHE MEASUREMENT CIRCUIT Fig.3-2 AVALANCHE WAVEFORM lnotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit ROHM Co., Ltd. All rights reserved. 10/ Rev.002

11 ldimensions 2015 ROHM Co., Ltd. All rights reserved. 11/ Rev.002

12