TSMT5. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000

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1 QS5U36 1.5V Drive Nch+SBD MOSFET Datasheet V DSS R DS(on) (Max.) I D 20V 133mΩ ±2.5A P D 1.25W loutline TSMT5 lfeatures 1) The QS5U36 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low V F schottky barrier diode. 5) Pb-free lead plating ; RoHS compliant. linner circuit lpackaging specifications Packing Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000 labsolute maximum ratings (T a = 25 C) <MOSFET> Taping code Marking Parameter Symbol Value Unit Drain - Source voltage V DSS 20 V Gate - Source voltage V GSS ±10 V Continuous drain current I D ±2.5 A Pulsed drain current I D, pulse *1 ±5.0 A Continuous source current (body diode) I S 0.7 A Pulsed source current (body diode) I S, pulse *1 5.0 A Power dissipation P D *3 0.9 W/element Junction temperature T j 150 TR U ROHM Co., Ltd. All rights reserved. 1/ Rev.001

2 labsolute maximum ratings (T a = 25 C) <SBD> Parameter Symbol Value Unit Repetitive peak reverse voltage V RM 25 V Reverse voltage V R 20 V Forward current I F 0.7 A Forward current surge peak I *2 FSM 3.0 A Power dissipation P *3 D 0.7 W/element Junction temperature T j 150 <MOSFET + SBD> Parameter Symbol Value Unit Power dissipation P *3 D 1.25 W/total Range of storage temperature T stg -55 to +150 lelectrical characteristics (T a = 25 C) <MOSFET> Values Parameter Symbol Conditions Unit Min. Typ. Max. Gate - Source leakage current I GSS V GS = ±10V, V DS = 0V - - ±10 μa Drain - Source breakdown voltage V (BR)DSS V GS = 0V, I D = 1mA V Zero gate voltage drain current I DSS V DS = 20V, V GS = 0V μa Gate threshold voltage V GS(th) V DS = 10V, I D = 1mA V Static drain - source on - state resistance R DS(on) *4 V GS = 4.5V, I D = 2.5A V GS = 2.5V, I D = 2.5A V GS = 1.8V, I D = 1.3A V GS = 1.5V, I D = 0.5A Transconductance g fs *4 V DS = 10V, I D = 2.5A S mω 2014 ROHM Co., Ltd. All rights reserved. 2/ Rev.001

3 lelectrical characteristics (T a = 25 C) <MOSFET> Parameter Symbol Conditions Values Min. Typ. Max. Unit Input capacitance C iss V GS = 0V Output capacitance C oss V DS = 10V pf Reverse transfer capacitance C rss f = 1MHz Turn - on delay time t d(on) *4 V DD 10V, V GS = 4.5V Rise time t r *4 I D = 1.3A Turn - off delay time t d(off) *4 R L = 7.7Ω Fall time t f *4 R G = 10Ω ns lgate charge characteristics (T a = 25 C) <MOSFET> Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q *4 g Gate - Source charge Q *4 gs V DD 10V, I D = 2.5A V GS = 4.5V Gate - Drain charge Q *4 gd nc lbody diode electirical characteristics (Source-Drain) (T a = 25 C) <MOSFET> Parameter Symbol Conditions Values Min. Typ. Max. Unit Forward voltage V SD *4 V GS = 0V, I S = 0.7A V 2014 ROHM Co., Ltd. All rights reserved. 3/ Rev.001

4 lelectrical characteristics (T a = 25 C) <SBD> Parameter Symbol Conditions Values Min. Typ. Max. Unit Forward voltage V F I F = 0.7A V Reverse current I R V R = 20V μa *1 Pw 10μs, Duty cycle 1% *2 60Hz 1 cycle *3 Mounted on a ceramic board *4 Pulsed 2014 ROHM Co., Ltd. All rights reserved. 4/ Rev.001

5 lelectrical characteristic curves <MOSFET> Fig.1 Typical Capacitance vs. Drain - Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics Fig.4 Typical Transfer Characteristics 2014 ROHM Co., Ltd. All rights reserved. 5/ Rev.001

6 lelectrical characteristic curves <MOSFET> Fig.5 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.6 Source Current vs. Source Drain Voltage Fig.7 Static Drain - Source On - State Resistance vs. Drain Current (I) Fig.8 Static Drain - Source On - State Resistance vs. Drain Current (II) 2014 ROHM Co., Ltd. All rights reserved. 6/ Rev.001

7 lelectrical characteristic curves <MOSFET> Fig.9 Static Drain - Source On - State Resistance vs. Drain Current (III) Fig.10 Static Drain - Source On - State Resistance vs. Drain Current (IV) Fig.11 Static Drain - Source On - State Resistance vs. Drain Current (V) Fig.12 Transconductance vs. Drain Current 2014 ROHM Co., Ltd. All rights reserved. 7/ Rev.001

8 lelectrical characteristic curves <SBD> Fig.13 Forward Current vs. Forward Voltage Fig.14 Reverse Current vs. Reverse Voltage lnotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore, it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low V F characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit ROHM Co., Ltd. All rights reserved. 8/ Rev.001

9 lmeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform 2014 ROHM Co., Ltd. All rights reserved. 9/ Rev.001

10 ldimensions 2014 ROHM Co., Ltd. All rights reserved. 10/ Rev.001

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12 Datasheet QS5U36 - Web Page Distribution Inventory Part Number QS5U36 Package TSMT5 Unit Quantity 3000 Minimum Package Quantity 3000 Packing Type Taping Constitution Materials List inquiry RoHS Yes