TSMT3. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
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1 RQ5L015SP Pch -60V -1.5A Middle Power MOSFET Datasheet V DSS -60V R DS(on) (Max.) I D P D 280mΩ ±1.5A 1W lfeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT3). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. loutline TSMT3 linner circuit lpackaging specifications Packing Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000 labsolute maximum ratings (T a = 25 C) Taping code Marking Parameter Symbol Value Unit Drain - Source voltage V DSS -60 V Continuous drain current I D ±1.5 A Pulsed drain current I D,pulse *1 ±6 A Gate - Source voltage V GSS ±20 V Power dissipation P D *2 1 W Junction temperature T j 150 Range of storage temperature T stg -55 to +150 TL FA 2014 ROHM Co., Ltd. All rights reserved. 1/ Rev.004
2 lthermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient R *2 thja /W lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = 0V, I D = -1mA V Breakdown voltage temperature coefficient Zero gate voltage drain current ΔV (BR)DSS I D = -1mA ΔT j referenced to mv/ I DSS V DS = -60V, V GS = 0V μa Gate - Source leakage current I GSS V GS = ±20V, V DS = 0V - - ±10 μa Gate threshold voltage V GS(th) V DS = -10V, I D = -1mA V Gate threshold voltage temperature coefficient Static drain - source on - state resistance ΔV GS(th) I D = -1mA ΔT j referenced to 25 R DS(on) * mv/ V GS = -10V, I D = -1.5A V GS = -4.5V, I D = -1.5A V GS = -4.0V, I D = -1.5A Transconductance g fs *3 V DS = -10V, I D = -1.5A S mω *1 Pw 10μs, Duty cycle 1% *2 Mounted on a ceramic boad *3 Pulsed 2014 ROHM Co., Ltd. All rights reserved. 2/ Rev.004
3 lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance C iss V GS = 0V Output capacitance C oss V DS = -10V Reverse transfer capacitance C rss f = 1MHz Turn - on delay time t *3 d(on) V DD -30V,V GS = -10V Rise time t *3 r I D = -0.75A Turn - off delay time t *3 d(off) R L = 25Ω Fall time t *3 f R G = 10Ω Unit pf ns lgate charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Q *3 g Gate - Source charge Q *3 gs V DD -30V, I D = -1.5A V GS = -10V Gate - Drain charge Q *3 gd Unit nc lbody diode electrical characteristics (Source-Drain) (T a = 25 C) Parameter Symbol Conditions Body diode continuous forward current Body diode pulse current I S T a = 25 Values Min. Typ. Max I SP * Forward voltage V SD *3 V GS = 0V, I S = -1.5A V Unit A 2014 ROHM Co., Ltd. All rights reserved. 3/ Rev.004
4 lelectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power dissipation 2014 ROHM Co., Ltd. All rights reserved. 4/ Rev.004
5 lelectrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature 2014 ROHM Co., Ltd. All rights reserved. 5/ Rev.004
6 lelectrical characteristic curves Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Tranceconductance vs. Drain Current 2014 ROHM Co., Ltd. All rights reserved. 6/ Rev.004
7 lelectrical characteristic curves Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 2014 ROHM Co., Ltd. All rights reserved. 7/ Rev.004
8 lelectrical characteristic curves Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) Fig.17 Static Drain - Source On - State Resistance vs. Drain Current(Ⅳ) 2014 ROHM Co., Ltd. All rights reserved. 8/ Rev.004
9 lelectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Switching Characteristics Fig.20 Dynamic Input Characteristics Fig.21 Source Current vs. Source Drain Voltage 2014 ROHM Co., Ltd. All rights reserved. 9/ Rev.004
10 lmeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform 2014 ROHM Co., Ltd. All rights reserved. 10/ Rev.004
11 ldimensions 2014 ROHM Co., Ltd. All rights reserved. 11/ Rev.004
12
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