4V Drive Nch + Pch MOSFET

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1 4V Drive Nch + Pch MOSFET SH8M2 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features ) Low on-resistance. 2) High power package(sop8). 3) Low voltage drive(4v drive). Dimensions (Unit : mm) SOP8 (8) (5) () (4) Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Package Taping Type Code TB Basic ordering unit (pieces) 25 SH8M2 Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Tr : N-ch Tr2 : P-ch Unit Drain-source voltage V DSS 3 3 V Gate-source voltage V GSS 2 2 V Drain current Continuous I D A I DP * 2 8 A Source current Continuous I s.6.6 A (Body Diode) I sp * 2 8 A Power dissipation P D *2 2. W / TOTAL.4 W / ELEMENT Channel temperature Tch 5 C Range of storage temperature Tstg 55 to 5 C * Pw s, Duty cycle % *2 Mounted on a ceramic board. () Tr Source (2) Tr Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr Drain (8) Tr Drain 2 2 () (2) (3) (4) ESD PROTECTION DIODE 2 BODY DIODE 2 ROHM Co., Ltd. All rights reserved. / Rev.A

2 SH8M2 Electrical characteristics (Ta = 25 C) <Tr(Nch)> Symbol Min. Typ. Max. Unit Gate-source leakage I GSS - - A V GS =±2V, V DS =V Drain-source breakdown voltage V (BR)DSS V I D =ma, V GS =V Zero gate voltage drain current I DSS - - A V DS =3V, V GS =V Gate threshold voltage V GS (th) V V DS =V, I D =ma I D =5A, V GS =V m I D =5A, V GS =4.5V I D =5A, V GS =4V Forward transfer admittance l Y fs l * S V DS =V, I D =5A Input capacitance C iss pf V DS =V Output capacitance C oss pf V GS =V Reverse transfer capacitance C rss pf f=mhz Turn-on delay time t d(on) * ns I D =2.5A, V DD 5V Rise time t r * ns V GS =V Turn-off delay time t d(off) * ns R L =6 Fall time t f * ns R G = Total gate charge Q g * nc I D =5A, V DD 5V Gate-source charge Q gs * nc V GS =5V Gate-drain charge Q gd * nc * Parameter Static drain-source on-state resistance R DS (on) * Conditions Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward Voltage V SD * V I s =5A, V GS =V * 2 ROHM Co., Ltd. All rights reserved. 2/ Rev.A

3 SH8M2 Electrical characteristics (Ta = 25 C) <Tr2(Pch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I GSS - - A V GS = 2V, V DS =V Drain-source breakdown voltage V (BR)DSS V I D = ma, V GS =V Zero gate voltage drain current I DSS - A V DS = 3V, V GS =V Gate threshold voltage V GS (th) V V DS = V, I D = ma Static drain-source on-state resistance I D = 4.5A, V GS = V m I D = 2.5A, V GS = 4.5V I D = 2.5A, V GS = 4.V Forward transfer admittance l Y fs l* S V DS = V, I D = 4.5A Input capacitance C iss pf V DS = V Output capacitance C oss pf V GS =V Reverse transfer capacitance C rss - - pf f=mhz Turn-on delay time t d(on) * ns I D = 2.5A, V DD 5V Rise time t r * ns V GS = V Turn-off delay time t d(off) * ns R L =6 Fall time t f * ns R G = Total gate charge Q g * nc I D = 4.5A, V DD 5V Gate-source charge Q gs * nc V GS = 5V Gate-drain charge Q gd * nc * * R DS (on) Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward Voltage V SD * V I s = 4.5A, V GS =V * 2 ROHM Co., Ltd. All rights reserved. 3/ Rev.A

4 . SH8M2 Electrical characteristic curves (Ta=25 C) Tr.(Nch) Fig. Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) 5 5 DRAIN CURRENT : I D [A] V GS = V V GS = 4.5V V GS = 4.V V GS = 3.V V GS = 2.5V DRAIN CURRENT : I D [A] V GS = V V GS = 4.5V V GS = 4.V V GS = 2.8V V GS = 2.5V V GS = 2.V V GS = 2.V DRAIN-SOURCE VOLTAGE : V DS [V] DRAIN-SOURCE VOLTAGE : V DS [V] Fig.3 Typical Transfer Characteristics Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) DRAIN CURRENT : I D [A].. V DS = V Ta=25 C RESISTANCE : R DS ( on )[mω] V GS = 4.V V GS = 4.5V V GS = V. 2 3 GATE-SOURCE VOLTAGE : V GS [V]. DRAIN-CURRENT : I D [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) RESISTANCE : R DS ( on )[mω] V GS = V Ta=25 C RESISTANCE : R DS ( on )[mω] V GS = 4.5V Ta=25 C. DRAIN-CURRENT : I D [A]. DRAIN-CURRENT : I D [A] 2 ROHM Co., Ltd. All rights reserved. 4/ Rev.A

5 SH8M2 RESISTANCE : R DS ( on )[mω] V GS = 4.V Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Ta=25 C. DRAIN-CURRENT : I D [A] FORWARD TRANSFER ADMITTANCE : Yfs [S] V DS = V Fig.8 Forward Transfer Admittance vs. Drain Current Ta=25 C... DRAIN-CURRENT : I D [A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Fig. Static Drain-Source On-State Resistance vs. Gate Source Voltage SOURCE CURRENT : Is [A]. V GS =V Ta=25 C RESISTANCE : R DS ( ON )[mω] I D = 2.5A I D = 5.A..5.5 SOURCE-DRAIN VOLTAGE : V SD [V] 5 GATE-SOURCE VOLTAGE : V GS [V] Fig. Switching Characteristics Fig.2 Dynamic Input Characteristics SWITCHING TIME : t [ns] t d(on) t d(off).. t f T a =25 C V DD =5V V GS =V R G =W t r GATE-SOURCE VOLTAGE : V GS [V] T a =25 C V DD = 5V I D = 5.A DRAIN-CURRENT : I D [A] TOTAL GATE CHARGE : Qg [nc] 2 ROHM Co., Ltd. All rights reserved. 5/ Rev.A

6 SH8M2 Fig.3 Typical Capacitance vs. Drain-Source Voltage Fig.4 Maximum Safe Operating Aera C iss Operation in this area is limited by R DS(ON) (V GS =V) CAPACITANCE : C [pf] T a =25 C f=mhz V GS =V C rss C oss.. DRAIN-SOURCE VOLTAGE : V DS [V] DRAIN CURRENT : I D (A) P W =us P W =ms P W = ms. Single Pulse : Unit DC operation Mounted on a ceramic board. (3mm 3mm.8mm).. DRAIN-SOURCE VOLTAGE : V DS [V] Fig.5 Normalized Transient Thermal Resistance vs. Pulse Width Single Pulse : Unit NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t).. Mounted on a ceramic board. (3mm 3mm.8mm) Rth (ch-a) =89.3 C/W Rth (ch-a) (t)=r(t) Rth (ch-a)... PULSE WIDTH : Pw(s) 2 ROHM Co., Ltd. All rights reserved. 6/ Rev.A

7 SH8M2 Tr.2(Pch) Fig. Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) DRAIN CURRENT : -I D [A] V GS = -V V GS = -4.5V V GS = -4.V V GS = -3.V V GS = -2.8V DRAIN CURRENT : -I D [A] V GS = -3.V V GS = -V V GS = -4.5V V GS = -4.V V GS = -2.8V V GS = -2.5V.5 V GS = -2.5V DRAIN-SOURCE VOLTAGE : -V DS [V] DRAIN-SOURCE VOLTAGE : -V DS [V] Fig.3 Typical Transfer Characteristics Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) V DS = -V DRAIN CURRENT : -I D [A].. Ta=25 C RESISTANCE : R DS (on)[mω] V GS = -4.V V GS = -4.5V V GS = -V. 2 3 GATE-SOURCE VOLTAGE : -V GS [V]. DRAIN-CURRENT : -I D [A] RESISTANCE : R DS (on)[mω] V GS = -V Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Ta=25 C RESISTANCE : R DS (on)[mω] V GS = -4.5V Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) Ta=25 C. DRAIN-CURRENT : -I D [A]. DRAIN-CURRENT : -I D [A] 2 ROHM Co., Ltd. All rights reserved. 7/ Rev.A

8 SH8M2 RESISTANCE : R DS (on)[mω] V GS = -4.V Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Ta=25 C. DRAIN-CURRENT : -I D [A] FORWARD TRANSFER ADMITTANCE : Yfs [S] V DS = -V Fig.8 Forward Transfer Admittance vs. Drain Current Ta=25 C... DRAIN-CURRENT : -I D [A] SOURCE CURRENT : -I s [A]. V GS =V Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Ta=25 C RESISTANCE : R DS (ON)[mΩ] Fig. Static Drain-Source On-State Resistance vs. Gate Source Voltage I D = -2.5A I D = -4.5A..5.5 SOURCE-DRAIN VOLTAGE : -V SD [V] 5 5 GATE-SOURCE VOLTAGE : -V GS [V] Fig. Switching Characteristics Fig.2 Dynamic Input Characteristics SWITCHING TIME : t [ns] t d(on) t d(off) t f V DD = -5V V GS = -V R G =W.. t r GATE-SOURCE VOLTAGE : -V GS [V] V DD = -5V I D = -4.5A DRAIN-CURRENT : -I D [A] TOTAL GATE CHARGE : Qg [nc] 2 ROHM Co., Ltd. All rights reserved. 8/ Rev.A

9 SH8M2 CAPACITANCE : C [pf] f=mhz V GS =V Crss Fig.3 Typical Capacitance vs. Drain-Source Voltage Coss Ciss.. DRAIN-SOURCE VOLTAGE : -V DS [V] DRAIN CURRENT : -I D (A). Fig.4 Maximum Safe Operating Aera Operation in this area is limited by R DS(ON) (V GS =-V) Single Pulse : Unit Mounted on a ceramic board. (3mm 3mm.8mm) P W =us P W =ms P W = ms DC operation.. DRAIN-SOURCE VOLTAGE : -V DS [V] Fig.5 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t).. Single Pulse : Unit Mounted on a ceramic board. (3mm 3mm.8mm) Rth (ch-a) =89.3 C/W Rth (ch-a) (t)=r(t) Rth (ch-a)..... PULSE WIDTH : Pw(s) 2 ROHM Co., Ltd. All rights reserved. 9/ Rev.A

10 SH8M2 Measurement circuits <Tr(Nch)> Pulse width ID RL VDS % 5% 9% 5% D.U.T. VDS % % RG VDD 9% 9% td(on) tr td(off) tf ton toff Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms ID RL VDS VG Qg IG(Const.) D.U.T. VDD Qgs Qgd Charge Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform <Tr2(Pch)> Pulse Width ID RL VDS % 5% 9% 5% RG D.U.T. VDD VDS td(on) % % 9% 9% tr td(off) tf ton toff Fig.3- Switching Time Measurement Circuit Fig.3-2 Switching Waveforms VG ID VDS Qg RL IG(Const.) D.U.T. Qgs Qgd VDD Charge Fig.4- Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 2 ROHM Co., Ltd. All rights reserved. / Rev.A

11 Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System 2 ROHM Co., Ltd. All rights reserved. R2A

12 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: SH8M2TB

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