Features Package Applications Key Specifications Internal Equivalent Circuit Absolute maximum ratings

Transcription

1 DKG2 Aug. 2 Features Low on-state resistance Built-in gate protection diode SMD PKG Package TO252 Applications DC / DC converter Switching Internal Equivalent Circuit D(2) Key Specifications V (BR)DSS =V (I D =ua) R DS(ON)=52 mω max. (V GS =V, I D =A) R DS(ON)=59 mω max. (V GS =4.5V, I D =A) G() S(3) Absolute maximum ratings (Ta=25 C) Characteristic Symbol Rating Unit Drain to Source Voltage V DSS V Gate to Source Voltage V GSS ±2 V Continuous Drain Current I D ±2 A Maximum Power Dissipation P D 4 (Tc=25 C) W Single Pulse Avalanche Energy E AS * 62.5 mj Channel Temperature T ch 5 C Storage Temperature T stg -55 to +5 C Maximum Drain to Source dv/dt dv/dt *.6 V/ns Peak diode recovery dv/dt dv/dt 2 *2 5 V/ns Peak diode recovery di/dt di/dt *2 A/μs * VDD=4V, L=mH, IL=A, unclamped, See Fig. *2 IsD=2A, See Fig.2 Copy Right: SANKEN ELECTRIC CO.,LTD. Page

2 DKG2 Aug. 2 Electrical characteristics Characteristic Symbol Test Conditions (Ta=25 C) Limits Unit MIN TYP MAX Drain to Source breakdown Voltage V (BR)DSS I D =μa,v GS =V V Gate to Source Leakage Current I GSS V GS =±2V ± μa Drain to Source Leakage Current I DSS V DS =V, V GS =V μa Gate Threshold Voltage V TH V DS =V, I D =ma V Forward Transconductance Re(yfs) V DS =V, I D D=A 9. S I D =A, V GS =V 4 52 Static Drain to Source On-Resistance R DS(ON) I D =A, V GS =4.5V mω Input Capacitance Ciss 22 Output Capacitance Coss V DS =V V GS =V f=mhz 2 Reverse Transfer Capacitance Crss pf Turn-On Delay Time td(on) 4 Rise Time tr I D =A, V DD =5V R G =2Ω, R L =5Ω 4 Turn-Off Delay Time td(off) V GS =V See Fig.3 28 ns Fall Time tf 34 Total Gate Charge Qg 47 Gate to Source Charge Qgs V DD =5V V GS =V I D =2V 8 Gate to Source Charge Qgd 7 nc Source-Drain Diode Forward Voltage V SD I SD =2A,V GS =V.9.2 V Source-Drain Diode Reverse Recovery Time trr I SD =2A 5 ns Source-Drain Diode Reverse Recovery Time Qrr di/dt=a/μs 6 nc Tharmal Resistance Junction to Case Rth(ch-c) 3.25 C/W Copy Right: SANKEN ELECTRIC CO.,LTD. Page 2

3 DKG2 Aug. 2 Characteristic Curves (Tc=25 C) 2 ID - VDS characteristics (typical) 4.5V VGS=V 3.5V 3.V 2 ID - VGS characteristics (typical) VDS=V Tc= VGS (V) RDS(ON) - Tc characteristics (typical) RDS(ON) - ID characteristics (typical) ID=A 6 8 VGS=4.5V RDS(ON) (mω) VGS=4.5V V RDS(ON) (mω) 4 2 V Tc ( ) VDS - VGS characteristics (typical) Re(yfs) - ID characteristics (typical) VDS=V.5 ID=2A A Re(yfs) (S) Tc= A VGS (V) Copy Right: SANKEN ELECTRIC CO.,LTD. Page 3

4 DKG2 Aug. 2 Characteristic Curves (Tc=25 C) Capacitance - VDS characteristics (typical) VGS=V f=mhz IDR - VSD characteristics (typical) 2 Ciss 5 Capa (pf) Coss Crss IDR (A) 5 Tc= VSD (V) TRANSIENT THERMAL RESISTANCE - PULSE WIDTH Single Pulse rth(ch-c) ( /W) PW (sec) 5 PD-Tc characteristics SAFE OPARATING AREA Tc=25 Single Pulse 4 With infinite heatsink 3 PT=ms PT=us PD (W) Tc ( ). Copy Right: SANKEN ELECTRIC CO.,LTD. Page 4

5 DKG2 Aug. 2 Fig. Unclamped Inductive Test Method V(BR)DSS EAS= L ILP 2 2 V(BR)DSS - VDD (a) Test Circuit (b) Waveforms Fig.2 Diode Reverse Recovery Time Test Method ISD trr di/dt IRM VDD dv/dt 2 VGS V VSD (a) Test Circuit (b) Waveforms Fig.3 Switching Time Test Method 9% VGS % 9% VDS % td(on) tr td(off) tf Duty cycle % ton toff (a) Test Circuit (b) Waveforms Copy Right: SANKEN ELECTRIC CO.,LTD. Page 5

6 DKG2 Aug. 2 TO252 Outline Pin assignment () Gate (2) Drain (3) Source Weight Approx..33g Copy Right: SANKEN ELECTRIC CO.,LTD. Page 6