PFU70R360G / PFD70R360G

Transcription

1 FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power Factor Correction(PFC) Switched mode power supply (SMPS) Uninterruptible Power Supply (UPS) BVDSS = 700 V RDS(on) = 0.36 Ω ID = 11.0 A Green Package N-Channel Super Junction MOSFET I-PAK(TO-251) G D S Gate Drain Source D-PAK(TO-252) G S D Absolute Maximum Ratings Thermal Resistance Characteristics TC=25 o C unless otherwise specified Symbol Parameter Value Units VDS Drain-Source Voltage (VGS=0V) 700 V ID Drain Current Continuous (TC = 25 o C) 11 A Drain Current Continuous (TC = 100 o C) 7.0 A IDM(pulse) Drain Current Pulsed * Note 1 33 A VGS Gate-Source Voltage (VDS=0V) ±30 V EAS Single Pulsed Avalanche Energy * Note 2 60 mj IAR Avalanche Current * Note A EAR Repetitive Avalanche Energy * Note 1 12 mj dv/dt PD Drain Source Voltage Slope, VDS 480V 50 V/ns Reverse Diode dv/dt, VDS 480V 15 V/ns Maximum Power Dissipation (TC = 25 o C) Derate above 25 o C Symbol Parameter Value Units R θjc Junction-to-Case (Maximum) 1.03 R θja Junction-to-Ambient (Maximum) W 0.97 W/ o C TJ, TSTG Operating and Storage Temperature Range -55 to +150 o C * Limited by maximum junction temperature o C/W

2 Electrical Characteristics TA=25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 ua V RDS(ON) Static Drain-Source On-Resistance Off Characteristics VGS = 10 V, ID = 7.0 A m.ohm BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ua V IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics VDS = 700 V, VGS = 0 V ua VDS = 560 V, TC=125 o C ua VGS = 30 V, VDS = 0 V na VGS = -30 V, VDS = 0 V na gfs Forward Transconductance VDS = 20V, ID = 7.0A S RG Intrinsic Gate Resistance f = 1.0 MHz, open drain ohm Ciss Input Capacitance pf VDS = 50 V, VGS = 0 V, Coss Output Capacitance pf f = 1.0 MHz Crss Reverse Transfer Capacitance pf Qg Total Gate Charge nc VDS = 560 V, ID = 11.0 A, Qgs Gate-Source Charge nc VGS = 10 V Qgd Gate-Drain Charge nc Switching Characteristics td(on) Turn-On Time ns tr Turn-On Rise Time VDS = 380 V, ID = 5.5 A, ns td(off) Turn-Off Delay Time RG = 6.8 Ω, VGS = 10V ns tf Turn-Off Fall Time ns Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current ISM Pulsed Source-Drain Diode Forward Current A VSD Source-Drain Diode Forward Voltage IS = 11.0 A, VGS = 0 V V trr Reverse Recovery Time IS = 11.0 A ns Qrr Reverse Recovery Charge di/dt = 100 A/μs μc Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. VDD=50V, RG=25, Starting T J =25 C

3 Typical Characteristics ID, Drain Current [A] Top : Bottom : Figure1. On Region Characteristics VGS 20.0V 15.0V 10.0V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V VDS, Drain-Source Voltage [V] us Pulse Test 2. TC = 25 o C ID, Drain Current [A] 10 2 Figure 2. Transfer Characteristics 150 o C 25 o C VGS, Gate-Source Voltage [V] 1. VDS = 20V us Pulse Test Figure 3. Static Drain-Source On Resistance Figure 4. Body Diode Forward Voltage 1.0 Drain-Source On-Resistance [ohm] IDR, Reverse Drain Current [A] 150 o C 25 o C 1. TJ = 25 o C VGS = 0V us Pulse Test ID, Drain Durrent [A] VSD, Source-Drain Voltage [V] Figure 5. Capacitance Charateristics Figure 6. Gate Charge Characteristics 10 4 Ciss Ciss = Cgs + Cgd (Cds=Shorted) Coss = Cds + Cgd Crss = Cgd VDS = 560V Capacitance [pf] Coss Crss VGS, Gate-Source Voltage [V] VDS = 140V VDS = 350V 1. VGS = 0V 2. f = 1 MHz 2 # Note 1. ID = 11A VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nc]

4 Typical Characteristics (continued) BVdss (Normalized) Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature TJ, Junction Temperature [ o C] 1. VGS = 0V 2. ID = 250uA Rds(on) (Normalized) Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature TJ, Junction Temperature [ o C] 1. VGS = 10 V 2. ID = 7.0 A 10 2 Figure 9. Safe Operation Area Operation in this area is limited by RDS(ON) Figure 10. Maximum Drain Current vs. Case Temperature 10us ID, Drain Current [A] 1. TC=25 o C 100us 1ms DC ID, Drain Current [A] TJ=150 o C 3. Single Pulse VDS, Drain-Source Voltage [V] TC, Case Temperature [ o C] Figure 11. Transient Thermal Response Curve D = 0.5 Thermal Response ZTJC(t) = 1.03 o C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZTJC(t) PDM t Single Pulse t Square Wave Pulse Duration [sec]

5 Characteristics Test Circuit & Waveform 10V R G R L DUT ( 0.5 rated ) V in 10% 90% t d(on) Switching Time Test Circuit & Waveforms t on t r t d(off) t off tf 12V 200nF 50KΩ 300nF Same Type as DUT V GS 10V Q g V GS Q gs Q gd 1mA DUT Charge Gate Charge Test Circuit & Waveform L 1 E AS = ---- L L I 2 2 AS BS BS -- I D BS I AS R G I D (t) 10V DUT (t) t p Time Unclamped Inductive Switching Test Circuit & Waveforms

6 Characteristics Test Circuit & Waveform (continued) DUT + I S Driver _ L R G Same Type as DUT V GS dv/dt controlled by RG I S controlled by pulse period V GS ( Driver ) D = Gate Pulse Width Gate Pulse Period 10V I FM, Body Diode Forward Current I S ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit & Waveforms

7 Package Dimension 6.6± ± I-PAK(TO-251) Φ ± ± ± ±0.05 Max ~ o Z 5 o 5 o 2.2± ± ± ± ± ± o

8 Package Dimension 6.6± ±0.10 D-PAK(TO-252) 6.15± ± ± ±0.15 Z 1.00± ± ± ± ± ± ±