Outline TSMT8. Road SW Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000. Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit P D
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1 Pch -2V -7A Power MOSFET Datasheet V DSS -2V R DS(on) (Max.) 4mW I D -7A P D.5W Outline TSMT8 () (2) (3) (4) (8) (7) (6) (5) Features Inner circuit ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8). () Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain 4) Pb-free lead plating ; RoHS compliant * ESD PROTECTION DIODE *2 BODY DIODE Packaging specifications Packaging Taping Application Reel size (mm) 8 Road SW Tape width (mm) 8 Type Basic ordering unit (pcs) 3, Taping code Marking TR SG Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit Drain - Source voltage V DSS -2 V Continuous drain current I D * drain current I D,pulse * A A Gate - Source voltage V GSS to -8 V Power dissipation P D *3 P D *4.5 W.55 W Junction temperature T j 5 C Range of storage temperature T stg -55 to +5 C / Rev.C
2 Thermal resistance Parameter Symbol Thermal resistance, junction - ambient *3 R thja Thermal resistance, junction - ambient *4 R thja Values Unit Min. Typ. Max C/W C/W Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = -ma V Breakdown voltage temperature coefficient ΔV (BR)DSS ΔT j I D = -ma referenced to 25 C mv/ C Zero gate voltage drain current I DSS V DS = -2V, V GS = V ma Gate - Source leakage current I GSS V GS = -8V, V DS = V ma Gate threshold voltage V GS (th) V DS = -6V, I D = -ma V Gate threshold voltage temperature coefficient ΔV (GS)th ΔT j I D = -ma referenced to 25 C mv/ C, I D = -7.A - 4 Static drain - source on - state resistance R DS(on) V GS = -2.5V, I D = -3.5A V GS = -.8V, I D = -3.5A V GS = -.5V, I D = -.4A mw V GS = -V, I D = -7A, T j =25 C Gate input resistannce R G f = MHz, open drain W Transconductance g fs V DS = V, I D = -7.A 22 - S * Limited only by maximum temperature allowed. *2 Pw ms, Duty cycle % *3 Mounted on a ceramic board (3 3.8mm) *4 Mounted on a FR4 (2 2.8mm) 2/ Rev.C
3 Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input capacitance C iss V GS = V Output capacitance C oss V DS = -6V pf Reverse transfer capacitance C rss f = MHz Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) Fall time t f V DD -6V, I D = -3.5A R L =.7W R G = W ns Gate Charge characteristics(t a = 25 C) Parameter Symbol Conditions Total gate charge Q g V DD -6V, I D = -7A Gate - Source charge Q gs Gate - Drain charge Q gd V DD -6V, I D = -7A Values Min. Typ. Max Unit nc Body diode electrical characteristics (Source-Drain)(T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I S * T a = 25 C A Forward voltage V SD V GS = V, I s = -7A V 3/ Rev.C
4 Electrical characteristic curves Fig. Power Dissipation Derating Curve 2 Fig.2 Maximum Safe Operating Area Power Dissipation : P D /P D max. [%] Operation in this area is limited by R DS (on) ( ) T a =25ºC Single Pulse DC Operation Mounted on a ceramic board. (3mm 3mm.8mm) P W = μs P W = ms P W = ms.. Junction Temperature : T j [ C] Drain - Source Voltage : -V DS [V] Normalized Transient Thermal Resistance : r (t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width. T a =25ºC Single Pulse top D= D=.5 D=. D=.5 D=. bottom Signle. Rth(ch-a)=83ºC/W Rth(ch-a)(t)=r(t) Rth(ch-a) Mounted on ceramic board. (3mm 3mm.8mm)... Pulse Width : P W [s] Peak Transient Power : P(W) Fig.4 Single Pulse Maximum Power dissipation T a =25ºC Single Pulse... Pulse Width : P W [s] 4/ Rev.C
5 Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) V GS = -2.5V V GS = -.8V V GS = -.5V V GS = -.2V V GS = -.V V GS = -2.5V V GS = -.8V V GS = -.5V V GS = -.2V V GS = -.V Drain - Source Voltage : -V DS [V] Drain - Source Voltage : -V DS [V] 5/ Rev.C
6 Electrical characteristic curves Drain - Source Breakdown Voltage : -V (BR)DSS [V] Fig.7 Breakdown Voltage vs. Junction Temperature 3 2 V GS =V I D = -ma pulsed Junction Temperature : T j [ C] Fig.8 Typical Transfer Characteristics.. V DS = -6V pulsed T a = 75ºC T a = -25ºC Gate - Source Voltage : -V GS [V] Gate Threshold Voltage : -V GS(th) [V] Fig.9 Gate Threshold Voltage vs. Junction Temperature V DS = -6V I D = -ma pulsed Junction Temperature : T j [ C] Transconductance : g fs [S] Fig. Transconductance vs. Drain Current. V DS = -6V pulsed T a = 75ºC T a = -25ºC... 6/ Rev.C
7 Electrical characteristic curves Fig. Drain CurrentDerating Curve.2 Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage 5 Drain Current Dissipation : I D / I D max.(%) I D = -.4A I D = -7.A Junction Temperature : T j [ºC] Gate - Source Voltage : -V GS [V] Fig.3 Static Drain - Source On - State Resistance vs. Drain Current(I) V GS = -.5V V GS = -.8V V GS = -2.5V.. Fig.4 Static Drain - Source On - State Resistance vs. Junction Temperature I D = -7A pulsed Junction Temperature : T j [ºC] 7/ Rev.C
8 Electrical characteristic curves Fig.5 Static Drain - Source On - State Resistance vs. Drain Current(II) T a = 75ºC T a = -25ºC... Fig.6 Static Drain - Source On - State Resistance vs. Drain Current(III) V GS = -2.5V T a = 75ºC T a = -25ºC.. Fig.7 Static Drain - Source On - State Resistance vs. Drain Current(IV) V GS = -.8V T a = 75ºC T a = -25ºC.. Fig.8 Static Drain - Source On - State Resistance vs. Drain Current(V) V GS = -.5V T a = 75ºC T a = -25ºC.. 8/ Rev.C
9 Electrical characteristic curves Fig.9 Typical Capacitance vs. Drain - Source Voltage Fig.2 Switching Characteristics Capacitance : C [pf] f=mhz V GS =V C iss C rss C oss.. Switching Time : t [ns] V DD -6V R G =W t f t d(off) t d(on).. t r Drain - Source Voltage : -V DS [V] Fig.2 Dynamic Input Characteristics 5 Fig.22 Source Current vs. Source Drain Voltage Gate - Source Voltage : -V GS [V] V DD = -6V I D = -7A Source Current : -I S [A]. V GS =V pulsed T a =25 C T a =75 C T a =25 C T a = -25 C Total Gate Charge : Q g [nc] Source-Drain Voltage : -V SD [V] 9/ Rev.C
10 Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform / Rev.C
11 Dimensions (Unit : mm) D A TSMT8 e b L E L HE x S A c e Lp Lp l2 A S e y S A l b2 Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM MILIMETERS INCHES MIN MAX MIN MAX A A b c D E e HE L L Lp Lp x y DIM MILIMETERS INCHES MIN MAX MIN MAX b e l l Dimension in mm / inches / Rev.C
12 Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System R2A
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