R6015ANX 600V. R DS(on) (Max.) 15A 50W. Nch 600V 15A Power MOSFET. Datasheet. Outline. Features. Inner circuit 1) Low on-resistance.

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1 Nch 6V 5 Power MOSFET Datasheet V DSS R DS(on) (Max.) 6V.3Ω Outline TO22FM I D P D 5 5W () (2) (3) Features Inner circuit ) Low onresistance. 2) Fast switching speed. 3) Gatesource voltage (V GSS ) guaranteed to be ±3V. 4) Drive circuits can be simple. () Gate (2) Drain (3) Source * Body Diode 5) Parallel use is easy. 6) Pbfree lead plating ; RoHS compliant Packaging specifications Packing Reel size (mm) Bulk pplication Switching Power Supply Type Tape width (mm) Basic ordering unit (pcs) 5 Taping code Marking R65NX bsolute maximum ratings (T a = 25 C) Parameter Symbol Value Unit Drain Source voltage V DSS 6 V Continuous drain current T c = 25 C T c = C I D * I D * ±5 ±7. drain current Gate Source voltage I D,pulse *2 V GSS ±6 ±3 V valanche energy, single pulse E S *3 5 mj valanche energy, repetitive E R *4 3.5 mj valanche current 7.5 I R *3 Power dissipation (T c = 25 C) P D 5 W Junction temperature T j 5 C Range of storage temperature T stg 55 to +5 C Reverse diode dv/dt dv/dt *5 5 V/ns / Rev.B

2 bsolute maximum ratings Parameter Symbol Conditions Values Unit Drain Source voltage slope dv/dt V DS = 48V, I D = 5 T j = 25 C 5 V/ns Thermal resistance Parameter Symbol Min. Values Typ. Max. Unit Thermal resistance, junction case R thjc 2.5 C/W Thermal resistance, junction ambient R thj 7 C/W Soldering temperature, wavesoldering for s T sold 265 C Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Drain Source breakdown voltage V (BR)DSS V GS = V, I D = m 6 V Drain Source avalanche breakdown voltage V (BR)DS V GS = V, I D = 5 7 V Zero gate voltage drain current I DSS V DS = 6V, V GS = V T j = 25 C T j = 25 C. µ Gate Source leakage current I GSS V GS = ±3V, V DS = V ± n Gate threshold voltage V GS (th) V DS = V, I D = m V Static drain source on state resistance R DS(on) V GS = V, I D = 7.5 T j = 25 C.23.3 T j = 25 C.46 Ω Gate input resistance R G f = MHz, open drain.5 Ω 2/ Rev.B

3 Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Transconductance g fs V DS = V, I D = S Input capacitance C iss V GS = V 7 Output capacitance C oss V DS = 25V 2 pf Reverse transfer capacitance C rss f = MHz 8 Effective output capacitance, energy related Effective output capacitance, time related C o(er) C o(tr) V GS = V V DS = V to 48V 79 8 pf Turn on delay time t d(on) V DD 3V, V GS = V 5 Rise time t r Turn off delay time t d(off) I D = 7.5 R L = 4Ω ns Fall time t f R G = Ω 6 2 Gate Charge characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Total gate charge Q g V DD 3V 5 Gate Source charge Q gs I D = 5 8 nc Gate Drain charge Q gd V GS = V 2 Gate plateau voltage V (plateau) V DD 3V, I D = 5 6. V * Limited only by maximum temperature allowed. *2 PW µs, Duty cycle % *3 L 5µH, V DD = 5V, R G = 25Ω, starting T j = 25 C *4 L 5µH, V DD = 5V, R G = 25Ω, starting T j = 25 C, f = khz *5 Reference measurement circuits Fig.5. 3/ Rev.B

4 Body diode electrical characteristics (SourceDrain) (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Inverse diode continuous, forward current Inverse diode direct current, pulsed I S * I SM *2 T c = 25 C 5 6 Forward voltage V SD V GS = V, I S = 5.5 V Reverse recovery time Reverse recovery charge Peak reverse recovery current t rr Q rr I rrm I S = 5 di/dt = /µs 482 ns 6.3 µc 26 Peak rate of fall of reverse recovery current di rr /dt T j = 25 C 7 /µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R th.7 C th.38 R th2.662 K/W C th2.429 Ws/K R th3 2.4 C th3.57 4/ Rev.B

5 Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating rea 2 Power Dissipation : P D /P D max. [%] Drain Current : I D []. Operation in this area is limited by R DS(ON) P W = us P W = ms P W = ms Single Pulse.. Junction Temperature : Tj [ C] Drain Source Voltage : V DS [V] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Normalized Transient Thermal Resistance : r (t). Single Pulse R th(cha)(t) = r (t) R th(cha) R th(cha) = 7ºC/W. top D = D =.5 D =.. D =.5 D =.. D = Single.. Pulse Width : PW [s] 5/ Rev.B

6 Electrical characteristic curves Fig.4 valanche Current vs Inductive Load Fig.5 valanche Power Losses valanche Current : I R [] V DD = 5V, R G = 25Ω V GF = V, V GR = V.. valanche Power Losses : P R [W] E+4.E+5.E+6 Coil Inductance : L [mh] Frequency : f [Hz] Fig.6 valanche Energy Derating Curve vs Junction Temperature 2 valanche Energy : E S / E S max. [%] Junction Temperature : T j [ºC] 6/ Rev.B

7 Electrical characteristic curves Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II) Drain Current : I D [] V 8.V 6.5V 7.V 6.V 5.5V 5.V V GS = 4.5V Drain Current : I D [] 5 5 V 8.V 7.V 6.5V 5.5V 6.V 5.V V GS = 4.5V Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] Fig.9 T j = 5 C Typical Output Characteristics(I) V V 5.5V T a = 5ºC 5 2 Fig. T j = 5 C Typical Output Characteristics(II) T a = 5ºC Drain Current : I D [] V GS = 4.5V Drain Current : I D [] V 5.V V V GS = 4.5V Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] 7/ Rev.B

8 Electrical characteristic curves Drain Source Breakdown Voltage : V (BR)DSS [V] Fig. Breakdown Voltage vs. Junction Temperature Junction Temperature : T j [ C] Drain Current : I D [] Fig.2 Typical Transfer Characteristics.. V DS = V T a = 25ºC T a = 75ºC T a = 25ºC Gate Source Voltage : V GS [V] Gate Threshold Voltage : V GS(th) [V] Fig.3 Gate Threshold Voltage vs. Junction Temperature V DS = V I D = m Junction Temperature : T j [ C] Transconductance : g fs [S] Fig.4 Transconductance vs. Drain Current.. V DS = V T a = 75ºC T a = 25ºC.... Drain Current : I D [] 8/ Rev.B

9 Electrical characteristic curves Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.5 Static Drain Source On State Resistance vs. Gate Source Voltage I D = 7.5 I D = Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.6 Static Drain Source On State Resistance vs. Junction Temperature V GS = V I D = 5 I D = Gate Source Voltage : V GS [V] Junction Temperature : T j [ºC] Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.7 Static Drain Source On State Resistance vs. Drain Current. V GS = V T a = 25ºC T a = 75ºC T a = 25ºC... Drain Current : I D [] 9/ Rev.B

10 Electrical characteristic curves Capacitance : C [pf] Fig.8 Typical Capacitance vs. Drain Source Voltage f = MHz V GS = V C rss C oss C iss.. Drain Source Voltage : V DS [V] Coss Stored Energy : E OSS [uj] Fig.9 Coss Stored Energy Drain Source Voltage : V DS [V] Fig.2 Switching Characteristics Fig.2 Dynamic Input Characteristics 5 Switching Time : t [ns] t d(off) t r t f t d(on) V DD 3V V GS = V R G = Ω Gate Source Voltage : V GS [V] 5 V DD 3V I D = 5 R G = Ω.. Drain Current : I D [] Total Gate Charge : Q g [nc] / Rev.B

11 Electrical characteristic curves Inverse Diode Forward Current : I S [] Fig.22 Inverse Diode Forward Current vs. Source Drain Voltage.. V GS = V T a = 25ºC T a = 75ºC T a = 25ºC.5.5 Source Drain Voltage : V SD [V] Reverse Recovery Time : t rr [ns], Fig.23 Reverse Recovery Time vs.inverse Diode Forward Current Ta=25ºC di/dt=/µs V GS =V. Inverse Diode Forward Current : I S [] / Rev.B

12 Measurement circuits Fig. Switching Time Measurement Circuit Fig.2 Switching Waveforms Fig.2 Gate Charge Measurement Circuit Fig.22 Gate Charge Waveform Fig.3 valanche Measurement Circuit Fig.32 valanche Waveform Fig.4 dv/dt Measurement Circuit Fig.42 dv/dt Waveform Fig.5 di/dt Measurement Circuit Fig.52 di/dt Waveform 2/ Rev.B

13 Dimensions (Unit : mm) TO22FM D E E φp 2 F b L 4 Q e b x c DIM MILIMETERS INCHES MIN MX MIN MX b b c D E e E F L p Q x.38.5 Dimension in mm/inches 3/ Rev.B

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