Outline. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000

Transcription

1 Pch -3V -3A Power MOSFET Datasheet Outline V DSS -3V TSMT6 R DS(on) (Max.) 75mW I D -3A P D.25W () (2) (3) (6) (5) (4) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6). 4) Pb-free lead plating ; RoHS compliant Inner circuit () Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain * ESD PROTECTION DIODE *2 BODY DIODE Packaging specifications Packaging Taping Application Reel size (mm) 8 DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3, Taping code Marking TR UA Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit Drain - Source voltage V DSS -3 V Continuous drain current I D * drain current I D,pulse *2 3 2 A A Gate - Source voltage V GSS 2 V Power dissipation P D *3 P D *4.25 W.6 W Junction temperature T j 5 C Range of storage temperature T stg -55 to +5 C / Rev.B

2 Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient R thja *3 R thja *4 - - C/W C/W Electrical characteristics(t a = 25 C) <It is the same characteristics for the Tr and Tr2> Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = -ma V Breakdown voltage temperature coefficient ΔV (BR)DSS ΔT j I D = -ma referenced to 25 C mv/ C Zero gate voltage drain current I DSS V DS = -3V, V GS = V ma Gate - Source leakage current I GSS V GS = 2V, V DS = V - - ma Gate threshold voltage V GS (th) V DS = -V, I D = -ma V Gate threshold voltage temperature coefficient ΔV (GS)th ΔT j I D = -ma referenced to 25 C mv/ C V GS = -V, I D = -3A Static drain - source on - state resistance R DS(on) V GS = -4.5V, I D = -.5A V GS = -4.V, I D = -.5A mw V GS = -V, I D = -3A, T j =25 C Gate input resistannce R G f = MHz, open drain W Transconductance g fs V DS = -V, I D = -3A S * Limited only by maximum temperature allowed. *2 Pw ms, Duty cycle % *3 Mounted on a ceramic board (3 3.8mm) *4 Mounted on a FR4 (5 2.8mm) 2/ Rev.B

3 Electrical characteristics(t a = 25 C) <It is the same characteristics for the Tr and Tr2> Parameter Symbol Conditions Values Min. Typ. Max. Unit Input capacitance C iss V GS = V Output capacitance C oss V DS = -V pf Reverse transfer capacitance C rss f = MHz Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) V DD -5V, V GS = -V I D = -.5A R L = W ns Fall time t f R G = W Gate Charge characteristics(t a = 25 C) <It is the same characteristics for the Tr and Tr2> Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g V DD -5V, I D = -3A V GS = -5V V DD -5V, I D = -3A V GS = -V nc Gate - Source charge Q gs Gate - Drain charge Q gd V DD -5V, I D = -3A V GS = -5V Body diode electrical characteristics (Source-Drain)(T a = 25 C) <It is the same characteristics for the Tr and Tr2> Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I S * T a = 25 C A Forward voltage V SD V GS = V, I s = -3A V 3/ Rev.B

4 Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Power Dissipation : P D /P D max. [%] Operation in this area is limited by R DS (on) (V GS = -V) P W = ms DC Operation P W = ms P W = ms. Single Pulse Mounted on a ceramic board. (3mm 3mm.8mm).. Junction Temperature : Tj [ C] Drain - Source Voltage : -V DS [V] Normalized Transient Thermal Resistance : r (t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width. Single Pulse top D= D=.5 D=. D=.5 D=. bottom Signle. Rth(ch-a)= /W Rth(ch-a)(t)=r(t) Rth(ch-a) Mounted on ceramic board (3mm 3mm.8mm)... Peak Transient Power : P(W) Fig.4 Single Pulse Maxmum Power dissipation Single Pulse.. Pulse Width : P W [s] Pulse Width : P W [s] 4/ Rev.B

5 Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) V GS = -.V V GS = -4.5V V GS = -3.8V V GS = -2.8V V GS = -2.5V V GS = -3.2V V GS = -3.V V GS = -3.2V V GS = -3.V V GS = -.V V GS = -4.5V V GS = -3.6V V GS = -2.8V Drain - Source Voltage : -V DS [V] Drain - Source Voltage : -V DS [V] Fig.7 Breakdown Voltage vs. Junction Temperature Fig.8 Typical Transfer Characteristics Drain - Source Breakdown Voltage : -V (BR)DSS [V] V GS = V I D = -ma Junction Temperature : T j [ C]... V DS = -V T a = 25ºC T a = 75ºC T a = 25ºC T a = -25ºC Gate - Source Voltage : -V GS [V] 5/ Rev.B

6 Electrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig. Transconductance vs. Drain Current Gate Threshold Voltage : -V GS(th) [V] 3 2 V DS = -V I D = -ma Transconductance : g fs [S] V DS = -V T a = -25ºC T a =75ºC T a =25ºC.. Junction Temperature : T j [ C] Drain Current Dissipation : I D /I D max. (%) Fig. Drain CurrentDerating Curve Junction Temperature : T j [ºC] Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage 3 2 I D = -.5A I D = -3.A Gate - Source Voltage : -V GS [V] 6/ Rev.B

7 Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.3 Static Drain - Source On - State Resistance vs. Drain Current(I) V GS = -4.V V GS = -4.5V V GS = -V. Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.4 Static Drain - Source On - State Resistance vs. Junction Temperature V GS = -V I D = -3.A Junction Temperature : T j [ºC] Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.5 Static Drain - Source On - State Resistance vs. Drain Current(II) V GS = -V T a =25ºC T a =75ºC T a = -25ºC. Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(III) V GS = -4.5V T a =25ºC T a =75ºC T a = -25ºC. 7/ Rev.B

8 Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.7 Static Drain - Source On - State Resistance vs. Drain Current(IV) V GS = -4.V T a =25ºC T a =75ºC T a = -25ºC. Capacitance : C [pf] Fig.8 Typical Capacitance vs. Drain - Source Voltage C rss C oss C iss T a = 25ºC f = MHz V GS = V.. Drain - Source Voltage : -V DS [V] Fig.9 Switching Characteristics Fig.2 Dynamic Input Characteristics Switching Time : t [ns] t r t d(off).. t f t d(on) V DD = -5V V GS = -V R G =W Gate - Source Voltage : -V GS [V] V DD = -5V I D = -3.A R G =W Total Gate Charge : Q g [nc] 8/ Rev.B

9 Electrical characteristic curves Fig.2 Source Current vs. Source Drain Voltage Source Current : -I S [A]. V GS =V T a =25ºC T a =75ºC T a = -25ºC Source-Drain Voltage : -V SD [V] 9/ Rev.B

10 Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform / Rev.B

11 Dimensions (Unit : mm) TSMT6 e D A Q c L Lp E H E b x S A A3 e y S A A2 A S l e b2 Patterm of terminal position areas DIM MILIMETERS INCHES MIN MAX MIN MAX A A...4 A A3.25. b c D E e.95.4 HE L Lp Q x y DIM MILIMETERS INCHES MIN MAX MIN MAX e 2..8 b l Dimension in mm/inches / Rev.B

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