Outline TO-220FM. Inner circuit. Switching Power Supply Tape width (mm) - Type Basic ordering unit (pcs) 500. Parameter Symbol Value Unit P D 40 W
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1 Nch 5V 5A Power MOSFET Datasheet Features V DSS 5V R DS(on) (Max.).5W I D P D ) Low onresistance. 2) Fast switching speed. 5A 4W 3) Gatesource voltage (V GSS ) guaranteed to be 3V. 4) Drive circuits can be simple. 5) Parallel use is easy. Outline Inner circuit 6) Pbfree lead plating ; RoHS compliant Packaging specifications Packaging Application Reel size (mm) Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) 5 Absolute maximum ratings(t a = 25 C) Drain Source voltage V DSS 5 V Bulk Taping code Marking ZDX5N5 Parameter Symbol Value Unit * Continuous drain current T c = 25 C I D Pulsed drain current I D,pulse *2 Gate Source voltage V GSS 3 V Power dissipation (T c = 25 C) TO22FM (3) (2) () 5 5 () Gate (2) Drain (3) Source * BODY DIODE P D 4 W Junction temperature T j 5 C Range of storage temperature T stg 55 to +5 C A A 22 ROHM Co., Ltd. All rights reserved. / 22.8 Rev.A
2 Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction ambient R thja 3.25 C/W Electrical characteristics(t a = 25 C) Parameter Drain Source breakdown voltage Zero gate voltage drain current Symbol V (BR)DSS I DSS R DS(on) Conditions V GS = V, I D = ma V DS = 5V, V GS = V Gate Source leakage current I GSS V GS = 3V, V DS = V Min. Values Typ. 5 Gate threshold voltage V GS (th) V DS = V, I D = ma Static drain source on state resistance Max. Unit V ma na V V GS = V, I D = 2.5A.2.5 W 22 ROHM Co., Ltd. All rights reserved. 2/ 22.8 Rev.A
3 Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Transconductance g fs V DS = V, I D = 2.5A 4 S Input capacitance C iss V GS = V 6 Output capacitance C oss V DS = 25V 62 Reverse transfer capacitance C rss f = MHz Turn on delay time t d(on) Rise time t r Turn off delay time t d(off) Fall time t f Gate Charge characteristics(t a = 25 C) Total gate charge Q g Gate Source charge Q gs Gate Drain charge Gate plateau voltage V (plateau) V DD 25V, I D = 5A 6 V * Limited only by maximum temperature allowed. *2 Pw ms, Duty cycle % Pulsed Parameter Symbol Conditions Q gd V DD 25V 5 V DD 25V, V GS = V 2 I D = 2.5A 2 R L = W 38 R G = W 22 I D = 5A V GS = V Values Min. Typ. Max pf ns Unit nc 22 ROHM Co., Ltd. All rights reserved. 3/ 22.8 Rev.A
4 Body diode electrical characteristics (SourceDrain)(T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Inverse diode continuous, forward current Inverse diode direct current, pulsed Forward voltage V SD I * S T c = 25 C I SM *2 5 A 5 A V GS = V, I S = 5A.5 V 22 ROHM Co., Ltd. All rights reserved. 4/ 22.8 Rev.A
5 Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Power Dissipation : P D /P D max. [%] Normalized Transient Thermal Resistance : r (t) Junction Temperature : T j [ C] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width top D= D=.5 D=. D=.5 D=. bottom Signle Rth(chc)=62.5ºC/W Rth(chc)(t)=r(t) Rth(chc).... Single Pulse Operation in this area is limited by R DS(on) P W = us P W = ms P W = ms.. Drain Source Voltage : V DS [V] Pulse Width : P W [s] 22 ROHM Co., Ltd. All rights reserved. 5/ 22.8 Rev.A
6 Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) Drain Source Breakdown Voltage : V (BR)DSS [V].9 Pulsed V GS =.V V GS =4.5V Drain Source Voltage : V DS [V] Fig.6 Breakdown Voltage vs. Channel Temperature V GS = V I D = ma Junction Temperature : T j [ C] Pulsed V DS = V V GS =.V V GS =6.V V GS =5.V Drain Source Voltage : V DS [V] Fig.7 Typical Transfer Characteristics T a = 25ºC T a = 75ºC T a = 25ºC T a = 25ºC Gate Source Voltage : V GS [V] 22 ROHM Co., Ltd. All rights reserved. 6/ 22.8 Rev.A
7 Electrical characteristic curves Gate Threshold Voltage : V GS(th) [V] Static Drain Source OnState Resistance : R DS(on) [mw] Fig.8 Gate Threshold Voltage vs. Channel Temperature V DS = V I D = ma Junction Temperature : T j [ C] Fig. Static Drain Source On State Resistance vs. Gate Source Voltage I D = 2.5A I D = 5.A Gate Source Voltage : V GS [V] Transconductance : g fs [S] Fig.9 Transconductance vs. Drain Current. V DS = V T a = 25ºC T a =75ºC ROHM Co., Ltd. All rights reserved. 7/ 22.8 Rev.A
8 Electrical characteristic curves Static Drain Source OnState Resistance : R DS(on) [mw] Fig. Static Drain Source On State Resistance vs. Drain Current(II) V GS = V T a =75ºC T a = 25ºC.. Static Drain Source OnState Resistance : R DS(on) [mw] Fig.2 Static Drain Source On State Resistance vs. Junction Temperature V GS = V I D = 5A Junction Temperature : T j [ºC] 22 ROHM Co., Ltd. All rights reserved. 8/ 22.8 Rev.A
9 Electrical characteristic curves Capacitance : C [pf] Gate Source Voltage : V GS [V] Fig.3 Typical Capacitance vs. Drain Source Voltage f=mhz V GS =V C iss C oss C rss.. 5 Drain Source Voltage : V DS [V] Fig.5 Dynamic Input Characteristics T a = 25ºC V DD = 45V I D = 5A R G = W Switching Time : t [ns] Inverse Diode Forward Current : I S [A] Fig.4 Switching Characteristics t d(off) t r t f V DD = 25V V GS = V R G =W t d(on)... V GS =V T a =75ºC T a = 25ºC Fig.6 Inverse Diode Forward Current vs. Source Drain Voltage Total Gate Charge : Q g [nc] Source Drain Voltage : V SD [V] 22 ROHM Co., Ltd. All rights reserved. 9/ 22.8 Rev.A
10 Measurement circuits Fig. Switching Time Measurement Circuit Fig.2 Switching Waveforms Fig.2 Gate Charge Measurement Circuit Fig.22 Gate Charge Waveform 22 ROHM Co., Ltd. All rights reserved. / 22.8 Rev.A
11 Dimensions (Unit : mm) TO22FM D A E φ p b e DIM MILIMETERS INCHES MIN MAX MIN MAX A A A A b b c D E e E F L p Q x.38.5 Dimension in mm/inches b F A2 A x A A L A4 c E Q 22 ROHM Co., Ltd. All rights reserved. / 22.8 Rev.A
12 Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with generaluse electronic equipment or devices (such as audio visual equipment, officeautomation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and failsafe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclearreactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System 22 ROHM Co., Ltd. All rights reserved. R2A
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