SCT2080KE. 1200V 80m 35A 179W. R DS(on) (Typ.) N-channel SiC power MOSFET. Datasheet. Outline TO-247. Features. Inner circuit 1) Low on-resistance

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1 Nchannel SiC power MOSFET SCT28KE Datasheet V DSS R DS(on) (Typ.) I D P D 2V 8m 35A 79W Outline TO247 () (2) (3) Features Inner circuit ) Low onresistance (2) 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive () (3) * () Gate (2) Drain (3) Source * Body Diode 6) Pbfree lead plating ; RoHS compliant Packaging specifications Packing Tube Application Solar inverters DC/DC converters Induction heating Motor drives Type Reel size (mm) Tape width (mm) Basic ordering unit (pcs) 3 Taping code Marking SCT28KE Absolute maximum ratings (T a = 25 C) Parameter Symbol Value Unit Drain Source voltage V DSS 2 V Continuous drain current T c = 25 C T c = C * I D * I D A A drain current I D,pulse *2 8 A Gate Source voltage V GSS 6 to 22 V Power dissipation (T c = 25 C) P D 79 W Junction temperature T j 5 C Range of storage temperature T stg 55 to 5 C / Rev.B

2 Thermal resistance Parameter Symbol Min. Values Typ. Max. Unit Thermal resistance, junction case R thjc.7 C/W Thermal resistance, junction ambient R thja 5 C/W Soldering temperature, wavesoldering for s T sold 265 C Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Drain Source breakdown voltage V (BR)DSS V GS = V, I D = ma 2 V Zero gate voltage drain current V DS = 2V, V GS = V I DSS T j = 25 C T j = 5 C 2 A Gate Source leakage current I GSS V GS = 22V, V DS = V na Gate Source leakage current I GSS V GS = 6V, V DS = V na Gate threshold voltage V GS (th) V DS = V GS, I D = 4.4mA.6 4. V Static drain source on state resistance R DS(on) V GS = 8V, I D = A T j = 25 C 8 7 T j = 25 C 25 m Gate input resistance R G f = MHz, open drain 6.3 2/ Rev.B

3 Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Transconductance g fs V DS = V, I D = A 3.7 S Input capacitance C iss V GS = V 28 Output capacitance C oss V DS = 8V 77 pf Reverse transfer capacitance C rss f = MHz 6 Effective output capacitance, energy related C o(er) V GS = V V DS = V to 5V 6 pf Turn on delay time t d(on) V DD = 4V, V GS = 8V 35 Rise time t r Turn off delay time t d(off) I D = A R L = ns Fall time R G = t f 22 Gate Charge characteristics (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Total gate charge Q g V DD = 4V 6 Gate Source charge Q gs I D = A 27 nc Gate Drain charge Q gd V GS = 8V 3 Gate plateau voltage V (plateau) V DD = 4V, I D = A 9.7 V * Limited only by maximum temperature allowed. *2 PW s, Duty cycle % 3/ Rev.B

4 Body diode electrical characteristics (SourceDrain) (T a = 25 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Inverse diode continuous, forward current Inverse diode direct current, pulsed I S * I SM *2 T c = 25 C 25 8 A A Forward voltage V SD V GS = V, I S = A 4.6 V Reverse recovery time Reverse recovery charge Peak reverse recovery current t rr Q rr I rrm I F = A, V R = 4V di/dt = 5A/ s 3 ns 44 nc 2.3 A Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R th.98 C th.5 R th2.237 K/W C th2.32 Ws/K R th3.22 C th / Rev.B

5 Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 2 P W = us Power Dissipation : P D /P D max. [%] Operation in this area is limited by R DS(ON) P W = ms P W = ms P W = ms Single Pulse.. Junction Temperature : Tj [ C] Drain Source Voltage : V DS [V] Transient Thermal Resistance : R th [K/W].. Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Single Pulse..... Pulse Width : PW [s] 5/ Rev.B

6 Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) V GS = 2V V GS = 8V V GS = 6V V GS = 4V V GS = 2V V GS = V V GS = 2V V GS = 8V V GS = 6V V GS = 4V V GS = V V GS = 2V Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] Fig.6 T j = 5 C Typical Output Fig.7 T j = 5 C Typical Output Characteristics(I) V GS = 6V V GS = 4V V GS = 2V V GS = 8V V GS = 2V V GS = V T a = 5ºC Characteristics(II) V GS = 8V V GS = 6V V GS = 4V V GS = 2V V GS = 2V V GS = V T a = 5ºC Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] 6/ Rev.B

7 Electrical characteristic curves Fig.8 Typical Transfer Characteristics.. V DS = V T a = 5ºC T a = 75ºC T a = 25ºC Gate Threshold Voltage : V GS(th) [V] Fig.9 Gate Threshold Voltage vs. Junction Temperature V DS = V I D = ma Gate Source Voltage : V GS [V] Junction Temperature : T j [ C] Fig. Transconductance vs. Drain Current V DS = V Transconductance : g fs [S]. T a = 5ºC T a = 75ºC T a = 25ºC... 7/ Rev.B

8 Electrical characteristic curves Static Drain Source OnState Resistance : R DS(on) [Ω] Fig. Static Drain Source On State Resistance vs. Gate Source Voltage I D = A I D = 2A Gate Source Voltage : V GS [V] Static Drain Source OnState Resistance : R DS(on) [Ω].5 Fig.2 Static Drain Source On State Resistance vs. Junction Temperature..5 V GS = 8V I D = 2A I D = A Junction Temperature : T j [ºC] Static Drain Source OnState Resistance : R DS(on) [Ω] Fig.3 Static Drain Source On State Resistance vs. Drain Current. V GS = 8V.. T a = 5ºC T a = 75ºC T a = 25ºC 8/ Rev.B

9 Electrical characteristic curves Fig.4 Typical Capacitance vs. Drain Source Voltage 4 Fig.5 Coss Stored Energy Capacitance : C [pf] f = MHz V GS = V C rss C oss C iss Coss Stored Energy : E OSS [uj] Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] Fig.6 Switching Characteristics Fig.7 Dynamic Input Characteristics 2 Switching Time : t [ns] t d(off) t r t d(on) t f V DD = 4V V GS = 8V R G = Ω Gate Source Voltage : V GS [V] 5 5 V DD = 4V I D = A Total Gate Charge : Q g [nc] 9/ Rev.B

10 Electrical characteristic curves Inverse Diode Forward Current : I S [A] Fig.8 Inverse Diode Forward Current vs. Source Drain Voltage.. V GS = V T a = 5ºC T a = 75ºC T a = 25ºC Source Drain Voltage : V SD [V] Reverse Recovery Time : t rr [ns] Fig.9 Reverse Recovery Time vs.inverse Diode Forward Current di / dt = 5A / us V R = 4V V GS = V Inverse Diode Forward Current : I S [A] / Rev.B

11 Measurement circuits Fig. Switching Time Measurement Circuit Fig.2 Switching Waveforms VGS ID VDS Pulse width RG D.U.T. RL VDD VGS VDS % 5% 9% 5% % % 9% 9% td(on) tr td(off) tf ton toff Fig.2 Gate Charge Measurement Circuit Fig.22 Gate Charge Waveform VGS ID VDS VG RL Qg IG(Const.) D.U.T. VGS VDD Qgs Qgd Charge Fig.3 di/dt Measurement Circuit Fig.32 di/dt Waveform IF D.U.T. RG IF L DRIVER MOSFET VDD trr Irr drr / dt Irr % Irr 9% Irr % / Rev.B

12 Dimensions (Unit : mm) TO247 2/ Rev.B

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