New Designs. Not Recommended for. 4V Drive Nch+Nch MOSFET SH8K Rev.A 1/4. Structure Silicon N-channel MOSFET. Dimensions (Unit : mm)

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1 4V Drive Nch+Nch MOSFET SH8K22 Sucture Silicon N-channel MOSFET Features ) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter, Inverter Packaging specifications Type SH8K22 Package Code Basic ordering unit (pieces) Taping TB 2500 Absolute maximum ratings (Ta=25 C) <It is the same ratings for the Tr and Tr2.> Symbol Limits Unit Drain-source voltage V DSS 45 V Gate-source voltage V GSS ±20 V Continuous I D ±4.5 A Drain current Pulsed I DP * ±8 A Source current Continuous I S A (Body diode) Pulsed I SP * 8 A 2 W / TOTAL Total power dissipation P D *2.4 W / ELEMENT Chanel temperature T ch 50 o C Range of Storage temperature T stg -55 to +50 * PW s Duty cycle *2 Mounted on a ceramic board o C Dimensions (Unit : mm) SOP8 Inner circuit 2 (8) (7) () (2) 2 (6) (5) (3) (4) ESD PROTECTION DIODE 2 BODY DIODE Each lead has same dimensions (8) (7) (6) (5) () (2) (3) (4) () Tr Source (2) Tr Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr Drain (8) Tr Drain A protection diode is included between the gate and the source terminals to protect the diode against static elecicity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. / Rev.A

2 Elecical characteristics (Ta=25 C) <It is the same characteristics for the Tr and Tr2.> Gate-source leakage Symbol IGSS Min. Typ. Max. ± Unit μa Conditions =±20V, =0V Drain-source breakdown voltage V(BR) DSS 45 V ID= ma, =0V Zero gate voltage drain current IDSS μa = 45V, =0V Gate threshold voltage (th) V = V, ID= ma mω ID= 4.5A, = V Static drain-source on-state resistance Forward ansfer admittance Input capacitance Output capacitance Reverse ansfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed Symbol Min. Typ. Max. Unit Condition Forward voltage V SD * V I S =4.5A/V GS =0V * RDS (on) Yfs Ciss Coss Crss td (on) td (off) tf Qg Qgs Qgd Body diode characteristics (Source-Drain) (Ta=25 C) <It is the same characteristics for the Tr and Tr2.> 4 57 mω ID= 4.5A, = 4.5V mω ID= 4.5A, = 4.0V 3.5 S = V, ID= 4.5A 550 pf = V 40 pf =0V 70 pf f=mhz 2 ns VDD 25V 8 ns ID= 2.5A = V 42 ns RL= Ω 2 ns RG=Ω nc VDD 25V, = 5V 2.0 nc ID= 4.5A 2.9 nc RL= 5.6Ω, RG= Ω 2/ Rev.A

3 Elecical characteristic curves Drain Currnt : ID [A] 0. =V Ta= Fig. Typical Transfer Characteristics Capacitance : C [pf] 00 0 V GS =4V Ta= Fig.4 Resistance vs. Drain Current (3) Ta= f=mhz V GS =0V Ciss Coss Crss Drain-Source Voltage : V DS [V] Fig.7 Typical capacitance vs. Source-Drain Voltage Switching Time : t [ns] 00 0 Ta= - =V Fig.2 Resistance vs. Drain Current () I D =4.5A 7 I D =2.25A Ta= Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage td(off) tf td(on) Ta= V DD =25V V GS =V R G = Pulsed Fig.8 Switching Characteristics 00 Source Current : Is [A] 0 V GS =4.5V Ta= Fig.3 Resistance vs. Drain Current (2) V GS =0V Ta= Source-Drain Voltage : V SD [V] Fig.6 Source-Current vs. Source-Drain Voltage Ta= V DD =25V I D =4.5A Total Gate Charge : Qg [nc] Fig.9 Dynamic Input Characteristics R G = Pulsed 3/ Rev.A

4 Measurement circuits ID RL Pulse Width 90% 50% % 50% RG D.U.T. Fig. Switching Time Test Circuit IG (Const.) RG Fig.2 Gate Charge Test Circuit ID D.U.T. VDD td(on) RL VDD ton % % 90% 90% td(off) toff Fig. Switching Time Waveforms VG Qgs Qgd Qg Fig.3 Gate Charge Waveform Charge 4/ Rev.A

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