Outline. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
|
|
- Audra Parks
- 5 years ago
- Views:
Transcription
1 Pch -3V -4A Power MOSFET Datasheet Outline V DSS -3V TSST8 R DS(on) (Max.) 45mW I D -4A P D.25W () (2) (8) (7) (6) (3) (4) (5) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). 4) Pb-free lead plating ; RoHS compliant Inner circuit () Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain * ESD PROTECTION DIODE *2 BODY DIODE Packaging specifications Packaging Taping Application Reel size (mm) 8 DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3, Taping code Marking TR UG Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit Drain - Source voltage V DSS -3 V Continuous drain current I D * drain current I D,pulse *2 4 6 A A Gate - Source voltage V GSS 2 V Power dissipation P D *3 P D *4.25 W.55 W Junction temperature T j 5 C Range of storage temperature T stg -55 to +5 C / Rev.B
2 Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - ambient R thja *3 R thja *4 - - C/W C/W Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = -ma V Breakdown voltage temperature coefficient ΔV (BR)DSS ΔT j I D = -ma referenced to 25 C mv/ C Zero gate voltage drain current I DSS V DS = -3V, V GS = V ma Gate - Source leakage current I GSS V GS = 2V, V DS = V - - ma Gate threshold voltage V GS (th) V DS = -V, I D = -ma V Gate threshold voltage temperature coefficient ΔV (GS)th ΔT j I D = -ma referenced to 25 C mv/ C V GS = -V, I D = -4A Static drain - source on - state resistance R DS(on) V GS = -4.5V, I D = -2A V GS = -4.V, I D = -2A mw V GS = -V, I D = -4A, T j =25 C Gate input resistannce R G f = MHz, open drain W Transconductance g fs V DS = -V, I D = -4A S * Limited only by maximum temperature allowed. *2 Pw ms, Duty cycle % *3 Mounted on a ceramic board (3 3.8mm) *4 Mounted on a FR4 (2 2.8mm) 2/ Rev.B
3 Electrical characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Input capacitance C iss V GS = V - - Output capacitance C oss V DS = -V pf Reverse transfer capacitance C rss f = MHz Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) Fall time t f V DD -5V, V GS = -V I D = -2A R L = 7.5W R G = W ns Gate Charge characteristics(t a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g V DD -5V, I D = -9A V GS = -5V V DD -5V, I D = -4A V GS = -V nc Gate - Source charge Q gs Gate - Drain charge Q gd V DD -5V, I D = -4A V GS = -5V Body diode electrical characteristics (Source-Drain)(T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I S * T a = 25 C A Forward voltage V SD V GS = V, I s = -4A V 3/ Rev.B
4 Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Power Dissipation : P D /P D max. [%] P W = ms Operation in this area is limited by R DS (on) (V GS = -V) P W = ms P W = ms DC Operation. Single Pulse Mounted on a ceramic board. (3mm 3mm.8mm).. Junction Temperature : Tj [ C] Drain - Source Voltage : -V DS [V] Normalized Transient Thermal Resistance : r (t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width. Single Pulse top D = D =.5 D =. D =.5 D =. bottom Single. Rth(ch-a)=ºC/W Rth(ch-a)(t)=r(t) Rth(ch-a) Mounted on ceramic board (3mm 3mm.8mm)... Peak Transient Power : P(W) Fig.4 Single Pulse Maxmum Power dissipation Single Pulse.. Pulse Width : P W [s] Pulse Width : P W [s] 4/ Rev.B
5 Electrical characteristic curves Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) V GS = -V V GS = -4.5V V GS = -4.V V GS = -2.8V V GS = -2.5V V GS = -V V GS = -4.5V V GS = -4.V V GS = -3.V V GS = -2.8V V GS = -2.5V Drain - Source Voltage : -V DS [V] Drain - Source Voltage : -V DS [V] Fig.7 Breakdown Voltage vs. Junction Temperature Fig.8 Typical Transfer Characteristics Drain - Source Breakdown Voltage : -V (BR)DSS [V] V GS = V I D = -ma Junction Temperature : T j [ C]... V DS = -V T a = 25ºC T a = 75ºC T a = 25ºC T a = -25ºC Gate - Source Voltage : -V GS [V] 5/ Rev.B
6 Electrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig. Transconductance vs. Drain Current Gate Threshold Voltage : -V GS(th) [V] 3 2 V DS = -V I D = -ma Transconductance : g fs [S] V DS = -V T a = -25ºC T a =75ºC T a =25ºC... Junction Temperature : T j [ C] Fig. Drain CurrentDerating Curve Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage Drain Current Dissipation : I D /I D max. (%) Static Drain - Source On-State Resistance : R DS(on) [mw] 5 5 I D = -2.A I D = -4.A 5 5 Junction Temperature : T j [ºC] Gate - Source Voltage : -V GS [V] 6/ Rev.B
7 Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.3 Static Drain - Source On - State Resistance vs. Drain Current(I) V GS = -4.V V GS = -4.5V V GS = -V. Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.4 Static Drain - Source On - State Resistance vs. Junction Temperature V GS = -V I D = -2.A Junction Temperature : T j [ºC] Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.5 Static Drain - Source On - State Resistance vs. Drain Current(II) V GS = -V T a =25ºC T a =75ºC T a = -25ºC. Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(III) V GS = -4.5V T a =25ºC T a =75ºC T a = -25ºC. 7/ Rev.B
8 Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [mw] Fig.7 Static Drain - Source On - State Resistance vs. Drain Current(IV) V GS = -4.V T a =25ºC T a =75ºC T a = -25ºC. Capacitance : C [pf] Fig.8 Typical Capacitance vs. Drain - Source Voltage T a = 25ºC f = MHz V GS = V C rss C oss C iss.. Drain - Source Voltage : -V DS [V] Fig.9 Switching Characteristics Fig.2 Dynamic Input Characteristics Switching Time : t [ns] t d(on) t d(off) t f t r V DD = -5V V GS = -V R G =W Gate - Source Voltage : -V GS [V] V DD = -5V I D = -4.A R G =W Total Gate Charge : Q g [nc] 8/ Rev.B
9 Electrical characteristic curves Fig.2 Source Current vs. Source Drain Voltage V GS =V Source Current : -I S [A]. T a =25ºC T a =75ºC T a = -25ºC..5.5 Source-Drain Voltage : -V SD [V] 9/ Rev.B
10 Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform / Rev.B
11 Dimensions (Unit : mm) TSST8 D L A c Lp E HE e b x L S A Lp A S e l l2 y S A b3 e Patterm of terminal position areas DIM MILIMETERS INCHES MIN MAX MIN MAX A A..5.2 b c D E e.65.3 HE L L Lp Lp x y DIM MILIMETERS INCHES MIN MAX MIN MAX e.46.6 b l l Dimension in mm/inches / Rev.B
12 Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System R2A
Outline. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
Pch -3V -3A Power MOSFET Datasheet Outline V DSS -3V TSMT6 R DS(on) (Max.) 75mW I D -3A P D.25W () (2) (3) (6) (5) (4) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface
More informationOutline TSMT3. Inner circuit. (1) Gate (2) Source (3) Drain *1 ESD PROTECTION DIODE *2 BODY DIODE
Nch 6V 3A Power MOSFET Datasheet V DSS R DS(on) (Max.) I D P D 6V 85mW 3A W Outline TSMT3 () (2) (3) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. Inner circuit () Gate (2) Source (3)
More informationOutline TSMT8. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
RQE7RP Pch -3V -7A Power MOSFET Datasheet V DSS -3V R DS(on) (Max.) 7mW I D -7A P D.5W Outline TSMT8 () (2) (3) (4) (8) (7) (6) (5) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3)
More informationOutline. Inner circuit. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
QS6K2 Nch 45V A Power MOSFET Datasheet Outline V DSS 45V TSMT6 R DS(on) (Max.) 42mW I D A P D.25W () (2) (3) (6) (5) (4) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface
More informationOutline TSMT8. Road SW Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000. Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit P D
Pch -2V -7A Power MOSFET Datasheet V DSS -2V R DS(on) (Max.) 4mW I D -7A P D.5W Outline TSMT8 () (2) (3) (4) (8) (7) (6) (5) Features Inner circuit ) Low on - resistance. 2) Built-in G-S Protection Diode.
More informationOutline SOP8 (SC-87) Inner circuit. Switching Power Supply Tape width (mm) 12 Type Basic ordering unit (pcs) 2,500
Nch 6V.63A Power MOSFET ZDS2N6 Datasheet V DSS 6V R DS(on) (Max.) 5.W I D.63A P D 2.W Outline SOP8 (SC-87) () (2) (3) (4) (8) (7) (6) (5) Features ) Low on-resistance. 2) Fast switching speed. 3) Gate-source
More informationOutline. Inner circuit. Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
Nch 2V 2mA Small Signal MOSFET Datasheet Outline V DSS 2V EMT3F R DS(on) (Max.) 1.2W (3) I D P D 2mA 15mW (1) (2) Features 1) Low voltage drive(1.2v) makes this Inner circuit device ideal for partable
More informationOutline TUMT3. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
Nch 3V.5A Power MOSFET Datasheet V DSS R DS(on) (Max.) 3V 24mW I D.5A Outline TUMT3 () (3) P D.8W (2) Features Inner circuit ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount
More informationOutline TSST8. Inner circuit. (1) Drain (2) Drain (3) Drain (4) Gate. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000
RTA45AP Pch -2V -4.5A Power MOSFET Datasheet V DSS R DS(on) (Max.) I D 2V 3m 4.5A P D.25W Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSST8). Outline
More informationOutline TO-220FM. Inner circuit. Switching Power Supply Tape width (mm) - Type Basic ordering unit (pcs) 500. Parameter Symbol Value Unit P D 40 W
Nch 5V 5A Power MOSFET Datasheet Features V DSS 5V R DS(on) (Max.).5W I D P D ) Low onresistance. 2) Fast switching speed. 5A 4W 3) Gatesource voltage (V GSS ) guaranteed to be 3V. 4) Drive circuits can
More informationOutline LPT(S) (SC-83) Inner circuit. Absolute maximum ratings(t a = 25 C) Parameter Symbol Value Unit I D E AS *3 P D 30 W P D 1.
Nch 25V 5.A Power MOSFET Datasheet Outline V DSS 25V LPT(S) (2) R DS(on) (Max.) 36mW I D 5.A (SC-83) P D 3W () (3) Features ) Low on-resistance. Inner circuit 2) Fast switching speed. 3) Drive circuits
More informationOutline. Inner circuit. DC/DC converters Tape width (mm) 10 Type Load Switch Basic ordering unit (pcs) 3,000 Taping code
Nch 3V 7A Power MOSFET Datasheet Outline V DSS 3V HUML22L8 R DS(on) at V (Max.) R DS(on) at 4.5V (Max.) I D 2.4mW 3.mW 7A P D 2.W () (2) (3) (6) (5) (4) (8) (3) (2) () (4) (5) (6) (7) Features ) Low on
More informationSCT2080KE. 1200V 80m 35A 179W. R DS(on) (Typ.) N-channel SiC power MOSFET. Datasheet. Outline TO-247. Features. Inner circuit 1) Low on-resistance
Nchannel SiC power MOSFET SCT28KE Datasheet V DSS R DS(on) (Typ.) I D P D 2V 8m 35A 79W Outline TO247 () (2) (3) Features Inner circuit ) Low onresistance (2) 2) Fast switching speed 3) Fast reverse recovery
More informationNew Designs. Not Recommended for R6008FNX 600V 0.95W 8A 50W. R DS(on) (Max.) Nch 600V 8A Power MOSFET. Datasheet. Outline. Inner circuit.
Nch 6V 8 Power MOSFET Datasheet Features V DSS R DS(on) (Max.) I D P D ) Low onresistance. ) Fast switching speed. bsolute maximum ratings(t a = 5 C) Drain Source voltage Continuous drain current drain
More information4V Drive Nch MOSFET RSD050N10
4V Drive Nch MOSFET RSD5N Structure Silicon N-channel MOSFET Dimensions (Unit : mm) Features ) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. Applications
More informationR6015ANX 600V. R DS(on) (Max.) 15A 50W. Nch 600V 15A Power MOSFET. Datasheet. Outline. Features. Inner circuit 1) Low on-resistance.
Nch 6V 5 Power MOSFET Datasheet V DSS R DS(on) (Max.) 6V.3Ω Outline TO22FM I D P D 5 5W () (2) (3) Features Inner circuit ) Low onresistance. 2) Fast switching speed. 3) Gatesource voltage (V GSS ) guaranteed
More informationRCD080N25 V DSS 250V 8A 20W. Nch 250V 8A Power MOSFET. Data Sheet. Outline. Inner circuit. Features 1) Low on-resistance. 2) Fast switching speed.
Nch 25V 8A Power MOSFET Outline V DSS 25V CPT3 R DS(on) (Max.) 3mW I D P D 8A 2W (SC-63) () (2) (3) Features ) Low on-resistance. Inner circuit 2) Fast switching speed. 3) Drive circuits can
More informationSCT3040KL N-channel SiC power MOSFET
N-channel SiC power MOSFET Datasheet V DSS R DS(on) (Typ.) I D P D 2V 4m 55A 262W Outline TO-247N () (2) (3) Inner circuit Features (2) ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery
More informationRCX450N20 V DSS 200V 45A 40W. Nch 200V 45A Power MOSFET. Datasheet. Outline. Inner circuit. Features 1) Low on-resistance. 2) Fast switching speed.
Nch V 45A Power MOSFET Datasheet Outline V DSS V TO-2FM R DS(on) (Max.) 55mW I D P D 45A 4W (3) () (2) Features ) Low on-resistance. Inner circuit 2) Fast switching speed. 3) Drive circuits can be simple.
More informationOutline (SC-63) <SOT-428> Inner circuit. (1) Gate (2) Drain (3) Source (1) Parameter Symbol Value Unit I D E AS *3 P D 20 W P D 0.
Nch 2V 3.A Power MOSFET Datasheet Features ) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. 5) Pb-free lead plating ; RoHS compliant 6) % Avalanche
More informationOutline. Inner circuit. Application Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 360 Taping code
Nch 6V 2A Power MOSFET Outline V DSS 6V TO-3PF R DS(on) (Max.).96W I D P D 2A 2W () (2)(3) Features ) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be 2V. 4)
More informationOutline. Inner circuit. Application Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 450 Taping code
Nch 6V 35A Power MOSFET Outline V DSS 6V TO-247 R DS(on) (Max.).2W I D P D 35A 2W (3) () (2) Features ) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be 2V.
More information1.2V Drive Nch MOSFET
.2V Drive Nch MOSFET RUE002N05 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) EMT3 (SC-75A) Features ) High speed switing. 2) Small package(emt3). 3)Ultra low voltage drive(.2v drive).
More informationNew Designs. Not Recommended for. 1.2V Drive Nch MOSFET RUE002N Rev.B 1/5. Structure. Dimensions (Unit : mm) Silicon N-channel MOSFET
.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET EMT3 Features ) High speed switing. 2) Small package(emt3). 3)Ultra low voltage drive(.2v drive). Application Switching
More informationSCT3030AL N-channel SiC power MOSFET
SCT33AL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 3mW 7A 262W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4)
More informationNew Designs. Not Recommended for. 2.5V Drive Nch MOSFET RSE002N Rev.A 1/5. Structure Silicon N-channel MOSFET. Dimensions (Unit : mm)
2.5V Drive Nch MOSFET RSE002N06 Structure Silicon N-channel MOSFET Features ) High speed switing. 2) Small package(emt3). 3) Low voltage drive(2.5v drive). Application Switching Packaging specifications
More information2.5V Drive Nch + Nch MOSFET
2.5V Drive Nch + Nch MOSFET UM6K3N Structure Silicon N-channel MOSFET Features ) High speed switing. 2) Small package(umt6). 3) Low voltage drive(2.5v drive). Dimensions (Unit : mm) UMT6 (SC-88)
More informationSCT3060AL N-channel SiC power MOSFET
SCT36AL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 6mW 39A 65W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4)
More information4V Drive Pch MOSFET RRR040P03
4V Drive Pch MOSFET Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TSMT3 Features ) Low On-resistance. 2) Space saving small surface mount package (TSMT3). 3) 4V drive. (3) () (2) Abbreviated
More information1.5V Drive Nch MOSFET RQ1C075UN
.5V Drive Nch MOSFET RQC75UN Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT8 (8) (7) (6) (5) Features ) Low on-resistance. 2) High power package(tsmt8). 3) Low voltage drive(.5v drive).
More information0.9V Drive Nch + Nch MOSFET EM6K34
.9V Drive Nch + Nch MOSFET EM6K34 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) EMT6 Features ) High speed switing. 2) Small package(emt6). 3)Ultra low voltage drive(.9v drive). (6) (5) (4)
More informationSCT3080KL N-channel SiC power MOSFET
N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 2V 8m 3A 65W Outline TO-247N () (2) (3) Inner circuit (2) Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy
More informationSCT3080AL N-channel SiC power MOSFET
N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 6V 8mW 3A 34W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to
More informationSCT3030KL N-channel SiC power MOSFET
SCT33KL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) 2V 3m Outline TO-247N I D 72A P D 339W () (2) (3) Inner circuit (2) Features ) Low on-resistance 2) Fast switching speed () * () Gate (2) Drain
More informationRRL035P03FRA Pch -30V -3.5A Power MOSFET
Pch -3V -3.5A Power MOSFET Datasheet Outline V DSS 3V TUMT6 R DS(on) (Max.) 5m I D 3.5A P D.W () (2) (3) (6) (5) (4) Features ) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount
More informationSCT3040KL N-channel SiC power MOSFET
SCT34KL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 2V 4m 55A 262W Outline TO-247N () (2) (3) Inner circuit Features (2) ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery
More informationSCT3060AL N-channel SiC power MOSFET
SCT36AL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 6m 39A 65W Outline TO-247N () (2) (3) Inner circuit (2) Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery
More informationSCT3017AL N-channel SiC power MOSFET
SCT37AL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 7mW 8A 427W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4)
More informationSCT3030KL N-channel SiC power MOSFET
SCT33KL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) 2V 3mW Outline TO-247N I D 72A P D 339W () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery ()
More informationSCT2080KE N-channel SiC power MOSFET
SCT28KE Nchannel SiC power MOSFET Features V DSS R DS(on) (Typ.) I D P D ) Low onresistance 2V 8mW 4A 262W Outline TO247 Inner circuit 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel
More informationSCT2H12NZ N-channel SiC power MOSFET
SCTHNZ N-channel SiC power MOSFET V DSS 7V R DS(on) (Typ.).5W I D P D 3.7A 35W Outline TO-3PFM Inner circuit () () (3) Features ) Low on-resistance ) Fast switching speed 3) Long creepage distance 4) Simple
More informationSCT3030AL N-channel SiC power MOSFET
SCT33AL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 3mW 7A 262W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4)
More informationSCT3120AL N-channel SiC power MOSFET
SCT32AL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 2mW 2A 3W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4)
More informationSCT2750NY N-channel SiC power MOSFET
SCT75NY N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 7V 75mW 6A 57W Outline TO-68-L () () () Features Inner circuit ) Low on-resistance ) Fast switching speed ) Long creepage distance with
More informationR6020ENX 600V 0.20W. R DS(on) (Max.) 20A 50W. Nch 600V 20A Power MOSFET. Data Sheet. Outline. Inner circuit 1) Low on-resistance.
Nch 6V Power MOSFET Outline V DSS R DS(on) (Max.) 6V.W TOFM I D P D 5W (3) () () Features Inner circuit ) Low onresistance. ) Fast switching speed. 3) Gatesource voltage (V GSS ) guaranteed to be V. )
More informationSCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD
SCH28KE Nchannel SiC power MOSFET copackaged with SiCSBD Features V DSS R DS(on) (Typ.) I D P D ) Low onresistance 2V 8mW 4A 262W Outline TO247 Inner circuit 2) Fast switching speed 3) Fast reverse recovery
More informationNch 600V 4A Power MOSFET Outline Features Inner circuit Packaging specifications Application Absolute maximum ratings Rev.
Nch 6V 4 Power MOSFET Outline V DSS R DS(on) (Max.) 6V 98mW TO22FM I D 4 P D 4W (3) () (2) Features Inner circuit ) Low onresistance. 2) Fast switching speed. 3) Gatesource voltage (V GSS ) guaranteed
More informationS2301 N-channel SiC power MOSFET bare die
S23 N-channel SiC power MOSFET bare die V DSS R DS(on) (Typ.) I D 2V 8mW 4A* Features Inner circuit ) Low on-resistance (D) 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple
More informationSCT3105KL N-channel SiC power MOSFET
SCT35KL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 2V 5mΩ 24A 34W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4)
More informationS4108 N-channel SiC power MOSFET bare die
S48 N-channel SiC power MOSFET bare die V DSS R DS(on) (Typ.) 2V 8m I D 3A * Features ) Low on-resistance Inner circuit (2) 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel () * ()
More informationS2307 N-channel SiC power MOSFET bare die
S237 N-channel SiC power MOSFET bare die V DSS R DS(on) (Typ.) 2V 45m I D 68A * Features ) Low on-resistance Inner circuit (2) 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel () *
More informationS4103 N-channel SiC power MOSFET bare die
N-channel SiC power MOSFET bare die V DSS R DS(on) (Typ.) V 22mW I D 95A *1 Features 1) Low on-resistance Inner circuit 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to
More information4V Drive Pch MOSFET RRR015P03
4V Drive Pch MOSFET Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TSMT3 Features ) Low On-resistance. 2) High power package. 3) 4V drive. (3) () (2) pplication Switching Inner circuit bbreviated
More informationTSMT6. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RRQ020P03 Pch -30V -2A Middle Power MOSFET Datasheet V DSS -30V R DS(on) (Max.) 160mΩ I D ±2A P D 1.25W lfeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT6). 3) Pb-free lead plating
More informationSCT2450KE N-channel SiC power MOSFET
SCT245KE N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 2V 45m A 85W Outline TO-247 () (2) (3) Inner circuit Features (2) ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery
More informationTSMT8. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RQ1E050RP Pch -30V -5A Middle Power MOSFET Datasheet V DSS -30V R DS(on) (Max.) 31mΩ I D ±5A P D 1.5W lfeatures 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(tsmt8).
More informationTSST8. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RT1A060AP Pch -12V -6A Middle Power MOSFET Datasheet V DSS -12V R DS(on) (Max.) 19mΩ I D ±6A P D 1.25W lfeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface
More informationTSMT3. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RQ5L015SP Pch -60V -1.5A Middle Power MOSFET Datasheet V DSS -60V R DS(on) (Max.) I D P D 280mΩ ±1.5A 1W lfeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT3). 3) Pb-free lead plating
More informationSCT2450KE N-channel SiC power MOSFET
SCT45KE Nchannel SiC power MOSFET Datasheet V DSS R DS(on) (Typ.) I D P D V 45mΩ A 85W Outline TO47 Features Inner circuit ) Low onresistance () ) Fast switching speed 3) Fast reverse recovery 4) Easy
More informationTSMT3. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RQ5E025AT Pch -30V -2.5A Middle Power MOSFET Datasheet V DSS -30V R DS(on) (Max.) I D P D 91mΩ ±2.5A 1W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT3). 3) Pb-free lead plating
More informationSCT2080KE N-channel SiC power MOSFET
SCT28KE Nchannel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 2V 8m 4A 262W Outline TO247 Features Inner circuit ) Low onresistance (2) 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel
More informationHSMT8. Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 12 Switching Basic ordering unit (pcs) 3000
RQ3E180AJ Nch 30V 18A Middle Power MOSFET Datasheet V DSS R DS(on) (Max.) 30V 4.5mΩ I D ±30A P D 2W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant
More informationTSMT8. Embossed Tape lapplication Reel size (mm) 180 Switching Type Tape width (mm) 8 Basic ordering unit (pcs) 3000 Taping code
QH8MA3 30V Nch+Pch Middle Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Pch TSMT8 V DSS 30V -30V R DS(on) (Max.) 29mΩ 48mΩ I D ±7.0A ±5.5A P D 2.5W lfeatures 1) Low on - resistance. 2) Small Surface
More informationDTD123YK V CC I C(MAX.) R 1 R 2. 50V 500mA 2.2kW 10kW. Datasheet. NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet Outline Parameter Value SMT3 V CC I C(MAX.) R 1 R 2 50V 500mA 2.2kW 10kW IN GND OUT DTD123YK SOT-346 (SC-59) Features 1)
More informationNew Designs. Not Recommended for. 4V Drive Nch+Nch MOSFET SH8K Rev.A 1/4. Structure Silicon N-channel MOSFET. Dimensions (Unit : mm)
4V Drive Nch+Nch MOSFET SH8K22 Sucture Silicon N-channel MOSFET Features ) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter, Inverter
More information1.2V Drive Pch MOSFET
.2V Drive Pch MOSFET RZE2P2 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) EMT3 Features ) High speed switching. 2) Small package (EMT3). 3).2V drive..6.7.3.55 (3).8 (2) ().2.2.5.5.6.5.Min.
More information1.5V Drive Nch+Pch MOSFET
.5V Drive Nch+Pch MOSFET US6M Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions (Unit : mm) TUMT6 Features ) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance.
More information4V Drive Pch+Pch MOSFET
4V Drive Pch+Pch MOSFET SH8J62 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features ) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). pplication
More informationSCT2120AF N-channel SiC power MOSFET
SCT22AF Nchannel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 2m 29A 65W Outline TO22AB () (2) (3) Features Inner circuit ) Low onresistance (2) 2) Fast switching speed 3) Fast reverse recovery 4)
More informationHUML2020L8 DFN2020-8S. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RF4E080GN Nch 30V 8A Middle Power MOSFET Datasheet V DSS R DS(on) (Max.) 30V 17.6mΩ I D ±8A loutline HUML2020L8 P D 2W DFN2020-8S lfeatures 1) Low on - resistance. 2) High power small mold package (HUML2020L8).
More informationPower management (dual transistors)
Power management (dual transistors) EMF3 / UMF3N DTA43T and SK39 are housed independently in a EMT6 package. Application Power management circuit Dimensions (Unit : mm) Features ) Power switching circuit
More information2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET
.5V Drive Nch MOSFET.5V Drive Pch MOSFET TT8M Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features ) Low on-state resistance. ) Low voltage
More information1.2V Drive Nch MOSFET
.2V Drive Nch MOSFET RUM002N02 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) VMT3 Applications Switching Features (2)Souce (3)Drain ) Fast switching speed. 2) Low voltage drive (.2V) makes
More informationDimensions (Unit : mm) MPT3. (1)Gate (2)Drain (3)Source. Inner circuit GATE SOURCE 1 ESD PROTECTION DIODE 2 BODY DIODE 60 ±2. mw W.
V Drive Nch MOSFET RHPN Structure Silicon N-channel MOSFET Dimensions (Unit : mm) MPT3.5..5.5 Features ) Low On-resistance. ) High speed switching. 3) Wide SO. (). ().5 (3)..5... pplications Switching
More informationLNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.
Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected
More informationMedium Power Transistor ( 32V, 1A)
Medium Power Transistor ( 32, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features 1) Low CE(sat). CE(sat) =.2(Typ.) (IC / IB = ma / ma) 2) Compliments 2SD1664 / 2SD1858 Structure Epitaxial planar type PNP silicon
More informationRRH140P mW -14A 2.0. Pch -30V -14A Power MOSFET. Datasheet SOP8 (7) loutline VDSS RDS(on) (Max.) linner circuit
RRH4P3 Pch -3V -4A Power MOSFET loutline VDSS -3V RDS(on) (Max.) 7mW ID -4A PD 2.W SOP8 (7) (5) (6) (8) (4) (3) () (2) linner circuit lfeatures ) Low on - resistance. () (2) (3) (4) 2) Built-in G-S Protection
More informationCPT3. Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 16 Switching Power Supply Basic ordering unit (pcs) 2500
R6002END Nch 600V 2A Power MOSFET Datasheet V DSS 600V R DS(on) (Max.) 3.4Ω I D P D ±1.7A 20W loutline CPT3 lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed
More informationTO-3PF. Reel size (mm) - lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 360 Taping code
R6015ANZ Nch 600V 15A Power MOSFET Datasheet V DSS 600V R DS(on) (Max.) 0.3Ω I D ±15A P D 110W lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be
More informationRGPZ10BM40FH 430V 20A Ignition IGBT
RGPZBM4FH 43V 2A Ignition IGBT Datasheet BV CES I C 43 3V 2A (Typ.).6V E AS 2mJ Outline TO-22 () (3) (2) Features Inner Circuit ) Low Collector - Emitter Saturation (2) 2) High Self-Clamped Inductive Switching
More informationRGTH80TS65 650V 40A Field Stop Trench IGBT
65V A Field Stop Trench IGBT Datasheet Outline V CES 65V TO-247N I C( C) A V CE(sat) (Typ.).6V P D 234W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3) Low Switching
More informationRGCL60TK60 Data Sheet
RGCL6TK6 6V 3A Field Stop Trench IGBT Outline V CES 6V TO-3PFM I C( C) 8A V CE(sat) (Typ.).4V@I C =3A P D 54W () (2) (3) Features ) Low Collector - Emitter Saturation Voltage 2) Soft Switching 3) Pb -
More informationRGW00TK65 650V 50A Field Stop Trench IGBT
RGWTK65 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-3PFM I C ( ) 26A V CE(sat) (Typ.).5V@I C =5A P D 89W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3)
More informationRGPR30NS40HR 400V 30A Ignition IGBT
4 3A Ignition IGBT B CES I C 4 3 3A CE(sat) (Typ.).6 E AS 3mJ Outline LPDS (TO-263S) / TO-262 (2) () (3) ()(2)(3) Features ) Low Collector - Emitter Saturation oltage Inner Circuit (2) 2) High Self-Clamped
More informationRGT00TS65D 650V 50A Field Stop Trench IGBT
65V 5A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 5A V CE(sat) (Typ.).65V P D 277W () (2) (3) Features Inner Circuit ) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3)
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers
More informationRGT8BM65D 650V 4A Field Stop Trench IGBT
5V A Field Stop Trench IGBT Datasheet Outline V CES 5V TO-5 I C( C) A V CE(sat) (Typ.).5V P D W () (3) () Features Inner Circuit ) Low Collector - Emitter Saturation Voltage ) Low Switching Loss 3) Short
More informationDual N-channel Enhancement-mode Power MOSFETs
Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate-charge RoHS-compliant halogen-free SO- package BV DS(ON) D DSS 3V mω Fast Switching Performance I 7.6A R D D Description
More information4V Drive Pch MOSFET. Data Sheet RP1H065SP. 1/ Rev.A. Dimensions (Unit : mm) Structure Silicon P-channel MOSFET
4V Drive Pch MOSFET RPH65SP Structure Silicon P-channel MOSFET Dimensions (Unit : mm) MPT6 (Single) Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6).
More informationSiC Power Module. Datasheet BSM120D12P2C005. Application Motor drive. Circuit diagram. Inverter, Converter. Photovoltaics, wind power generation.
SiC Power Module BSMDPC Datasheet Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 9(N.C) 3, Features ) Low surge, low switching
More informationTO-220FM. Not Recommended for. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500
R5005CNX Nch 500V 5A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 1.6Ω I D ±5A P D 40W lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be ±30V.
More informationTO-220FM. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500
R5016ANX Nch 500V 16A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 0.27Ω I D ±16A P D 50W loutline TO-220FM lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS )
More informationEmbossed Tape lapplication Reel size (mm) 330 Switching Type Tape width (mm) 12 Basic ordering unit (pcs) 2500
SH8M24 45V Nch+Pch Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Pch V DSS 45V -45V R DS(on) (Max.) 46mΩ 63mΩ SOP8 I D ±6A ±6A P D 3.1W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package
More informationRGTVX6TS65 650V 80A Field Stop Trench IGBT
65V 8A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 8A V CE(sat) (Typ.).5V P D 44W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss
More informationD1/D2 S1 G1 S2 G2 TO-252-4L
Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS-compliant, halogen-free Description S1 G1 S2 G2 D1/D2 TO-252-4L
More informationQST3 V CEO -30V I C -5A. Datasheet. PNP -5A -30V Middle Power Transistor. Outline
PNP -5A -30V Middle Power Transistor Datasheet Features Parameter 1) Suitable for Middle Power Driver 2) Complementary NPN Types : QSX2 3) Low V CE(sat) V CE(sat) = -0.25V(Max.) (I C /I B = -2A / -40mA)
More information30V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD12N3AT, TTP12N3AT 3V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in
More information40V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 40V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters
More information40V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 4V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters
More informationN-Channel 60-V (D-S) MOSFET
Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-
More information