New Designs. Not Recommended for R6008FNX 600V 0.95W 8A 50W. R DS(on) (Max.) Nch 600V 8A Power MOSFET. Datasheet. Outline. Inner circuit.

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1 Nch 6V 8 Power MOSFET Datasheet Features V DSS R DS(on) (Max.) I D P D ) Low onresistance. ) Fast switching speed. bsolute maximum ratings(t a = 5 C) Drain Source voltage Continuous drain current drain current Parameter Gate Source voltage valanche energy, single pulse valanche energy, repetitive 6V.95W 8 5W 3) Gatesource voltage (V GSS ) guaranteed to be 3V. ) Drive circuits can be simple. 5) Parallel use is easy. 6) Pbfree lead plating ; RoHS compliant pplication Switching Power Supply T c = 5 C T c = C Outline TOFM ()()(3) Inner circuit Packaging specifications Type Symbol V DSS I D * I D * I D,pulse * V GSS E S *3 3. E R * Packaging Reel size (mm) Basic ordering unit (pcs) Taping code Marking Value () Gate () Drain (3) Source * Body Diode Tape width (mm) 5 R68FNX Unit V Bulk V mj mj valanche current I R *3 Power dissipation (T c = 5 C) P D 5 W Junction temperature T j 5 C Range of storage temperature T stg 55 to +5 C Reverse diode dv/dt dv/dt *5 5 V/ns ROHM Co., Ltd. ll rights reserved. /3. Rev.B

2 bsolute maximum ratings Parameter Symbol Conditions Values Unit V DS = 8V, I D = 8 Drain Source voltage slope dv/dt T j = 5 C 5 Thermal resistance Drain Source avalanche breakdown voltage Parameter Thermal resistance, junction case Thermal resistance, junction ambient Soldering temperature, wavesoldering for s Electrical characteristics(t a = 5 C) Parameter Drain Source breakdown voltage Zero gate voltage drain current Gate Source leakage current Symbol V (BR)DSS V (BR)DS I DSS T j = 5 C T j = 5 C Symbol R thjc I GSS V GS = 3V, V DS = V Gate threshold voltage V GS (th) V DS = V, I D = m V GS = V, I D = Static drain source on state resistance R DS(on) T j = 5 C T j = 5 C.6 Gate input resistance R G f = MHz, open drain 8. R thj T sold Conditions V GS = V, I D = m V GS = V, I D = 8 V DS = 6V, V GS = V Min. Min. 6 Values Typ Values Typ. Max. 65 Max. V/ns Unit C/W C/W C Unit V V m m n V W W ROHM Co., Ltd. ll rights reserved. /3. Rev.B

3 Electrical characteristics(t a = 5 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Transconductance Input capacitance Reverse transfer capacitance g fs * Limited only by maximum temperature allowed. * P W ms, Duty cycle % *3 L 5mH, V DD = 5V, R G = 5W, starting T j = 5 C * L 5mH, V DD = 5V, R G = 5W, starting T j = 5 C, f = khz *5 Reference measurement circuits Fig.5. V DS = V, I D =.5 5 S C iss V GS = V 58 Output capacitance C oss V DS = 5V Effective output capacitance, energy related Effective output capacitance, time related Turn on delay time t d(on) 5 C rss f = MHz 5 C o(er) C o(tr) Rise time t r Turn off delay time t d(off) Fall time t f Gate Charge characteristics(t a = 5 C) Parameter Total gate charge Symbol Q g Gate Source charge Q gs Gate Drain charge Q gd V GS = V V DS = V to 8V V DD 3V, V GS = V I D = R L = 75W R G = W V DD 3V I D = 8 V GS = V Conditions Min Values Typ. 5 pf pf Max. Gate plateau voltage V (plateau) V DD 3V, I D = ns Unit nc V ROHM Co., Ltd. ll rights reserved. 3/3. Rev.B

4 Body diode electrical characteristics (SourceDrain)(T a = 5 C) Parameter Symbol Conditions Min. Values Typ. Max. Unit Inverse diode continuous, forward current Inverse diode direct current, pulsed Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current R th I S * I SM * V SD t rr Q rr I rrm di rr /dt Typical Transient Thermal Characteristics T c = 5 C V GS = V, I S = 8 I S = 8 di/dt = /us T j = 5 C V 87 ns Symbol Value Unit Symbol Value Unit.63 C th R th3.8 C th R th.977 K/W C th mc.9 /ms Ws/K ROHM Co., Ltd. ll rights reserved. /3. Rev.B

5 Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig. Maximum Safe Operating rea Normalized Transient Thermal Resistance : r (t) Power Dissipation : P D /P D max. [%] Junction Temperature : Tj [ C] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Single Pulse R th(cha)(t) = r (t) R th(cha) R th(cha) = 7ºC/W top D =. D =.5 D =.. D =.5 D =. D = Single.... Operation in this area is limited by R DS(ON) Single Pulse P W = us P W = ms P W = ms.. Drain Source Voltage : V DS [V] Pulse Width : P W [s] ROHM Co., Ltd. ll rights reserved. 5/3. Rev.B

6 Electrical characteristic curves Fig. valanche Current vs Inductive Load Fig.5 valanche Power Losses valanche Current : I R [] valanche Energy : E S / E S max. [%] 6 5 V DD = 5V, R G = 5W V GF = V, V GR = V Coil Inductance : L [mh] Fig.6 valanche Energy Derating Curve vs Junction Temperature Junction Temperature : T j [ºC] valanche Power Losses : P R [W] E+.E+5.E+6 Frequency : f [Hz] ROHM Co., Ltd. ll rights reserved. 6/3. Rev.B

7 Electrical characteristic curves Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II) 8 V T 7 a = 5ºC 6.V 5.5V V 3 V GS =.5V 3 5 Drain Source Voltage : V DS [V] Fig.9 T j = 5 C Typical Output Characteristics(I) V 6.V 5.5V 5.V V GS =.5V T a = 5ºC V 7.V 6.5V V 6.V 5.5V 5.V V GS =.5V 3 5 Drain Source Voltage : V DS [V] Fig. T j = 5 C Typical Output Characteristics(II) T a = 5ºC 6.V 5.V V V GS =.5V Drain Source Voltage : V DS [V] Drain Source Voltage : V DS [V] ROHM Co., Ltd. ll rights reserved. 7/3. Rev.B

8 Electrical characteristic curves Drain Source Breakdown Voltage : V (BR)DSS [V] Gate Threshold Voltage : V GS(th) [V] Fig. Breakdown Voltage vs. Junction Temperature Junction Temperature : T j [ C] Fig.3 Gate Threshold Voltage vs. Junction Temperature V DS = V I D = m Junction Temperature : T j [ C] Transconductance : g fs [S] Fig. Typical Transfer Characteristics.. V DS = V T a = 75ºC Gate Source Voltage : V GS [V] Fig. Transconductance vs. Drain Current V DS = V T a = 75ºC... ROHM Co., Ltd. ll rights reserved. 8/3. Rev.B

9 Electrical characteristic curves Static Drain Source OnState Resistance : R DS(on) [W] Static Drain Source OnState Resistance : R DS(on) [W] Fig.5 Static Drain Source On State Fig.6 Static Drain Source On State Resistance vs. Gate Source Voltage Resistance vs. Junction Temperature V GS = V I D =. I D = 8. Gate Source Voltage : V GS [V] Fig.7 Static Drain Source On State Resistance vs. Drain Current T a = 75ºC.. Static Drain Source OnState Resistance : R DS(on) [W] V GS = V I D = 8. I D = Junction Temperature : T j [ºC] ROHM Co., Ltd. ll rights reserved. 9/3. Rev.B

10 Electrical characteristic curves Capacitance : C [pf] Switching Time : t [ns] Fig.8 Typical Capacitance vs. Drain Source Voltage f = MHz V GS = V C rss C iss C oss.. t d(off) Drain Source Voltage : V DS [V] Fig. Switching Characteristics t f t r t d(on). V DD = 3V V GS = V R G = W Coss Stored Energy : E OSS [uj] Gate Source Voltage : V GS [V] Fig.9 Coss Stored Energy Drain Source Voltage : V DS [V] Fig. Dynamic Input Characteristics V DD = 3V I D = 8. R G = W 3 Total Gate Charge : Q g [nc] ROHM Co., Ltd. ll rights reserved. /3. Rev.B

11 Electrical characteristic curves Inverse Diode Forward Current : I S [] Fig. Inverse Diode Forward Current vs. Source Drain Voltage.. V GS = V T a = 75ºC.5.5 Source Drain Voltage : V SD [V] Reverse Recovery Time : t rr [ns] Fig.3 Reverse Recovery Time vs.inverse Diode Forward Current di / dt = / ms V GS = V. Inverse Diode Forward Current : I S [] ROHM Co., Ltd. ll rights reserved. /3. Rev.B

12 Measurement circuits Fig. Switching Time Measurement Circuit Fig. Switching Waveforms Fig. Gate Charge Measurement Circuit Fig.3 valanche Measurement Circuit Fig. dv/dt Measurement Circuit Fig.5 di/dt Measurement Circuit Fig. Gate Charge Waveform Fig.3 valanche Waveform Fig. dv/dt Waveform Fig.5 di/dt Waveform ROHM Co., Ltd. ll rights reserved. /3. Rev.B

13 Dimensions (Unit : mm) TOFM φ p b e D Dimension in mm/inches b F x L DIM MILIMETERS INCHES MIN MX MIN MX b b c D E e.5. E F L p Q x.38.5 c E E Q ROHM Co., Ltd. ll rights reserved. 3/3. Rev.B

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