Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 24 Switching Basic ordering unit (pcs) 1000
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1 R6011KNJ Nch 600V 11A Power MOSFET Datasheet loutline V DSS 600V TO-263 R DS(on) (Max.) 0.39Ω SC-83 I D ±11A LPT(S) P D 124W lfeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant linner circuit lpackaging specifications Packing Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 24 Switching Basic ordering unit (pcs) 1000 labsolute maximum ratings (T a = 25 C,unless otherwise specified) Taping code Marking TL R6011KNJ Parameter Symbol Value Unit Drain - Source voltage V DSS 600 V Continuous drain current (T c = 25 C) I D *1 ±11 A Pulsed drain current I DP *2 ±33 A Gate - Source voltage static ±20 V V GSS AC(f>1Hz) ±30 V Avalanche current, single pulse I AS 1.8 A Avalanche energy, single pulse E AS *3 210 mj Power dissipation (T c = 25 C) P D 124 W Junction temperature T j 150 Operating junction and storage temperature range T stg -55 to ROHM Co., Ltd. All rights reserved. 1/ Rev.001
2 lthermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case R thjc * /W Thermal resistance, junction - ambient R thja * /W Soldering temperature, wavesoldering for 10s T sold lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = 0V, I D = 1mA V Zero gate voltage drain current V DS = 600V, V GS = 0V I DSS T j = 25 C T j = 125 C Gate - Source leakage current I GSS V GS = ±20V, V DS = 0V - - ±100 na Gate threshold voltage V GS(th) V DS = 10V, I D = 1mA 3-5 V Static drain - source on - state resistance R DS(on) *6 V GS = 10V, I D = 3.8A T j = 25 C T j = 125 C Gate resistance R G f = 1MHz, open drain Ω μa Ω 2015 ROHM Co., Ltd. All rights reserved. 2/ Rev.001
3 lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Forward Transfer Admittance Y fs *6 V DS = 10V, I D = 5.5A S Input capacitance C iss V GS = 0V Output capacitance C oss V DS = 25V Reverse transfer capacitance C rss f = 1MHz Turn - on delay time t *6 d(on) V DD 300V, V GS = 10V Rise time t *6 r I D = 5.5A Turn - off delay time t *6 d(off) R L 54.9Ω Fall time t *6 f R G = 10Ω pf ns lgate charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q *6 g V DD 300V Gate - Source charge Q *6 gs I D = 11A nc Gate - Drain charge Q *6 gd V GS = 10V Gate plateau voltage V (plateau) V DD 300V, I D = 11A V *1 Limited only by maximum channel temperature allowed. *2 Pw 10μs, Duty cycle 1% *3 L 100mH, V DD =50V, R G =25Ω, STARTING T j =25 *4 T C =25 *5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm) *6 Pulsed 2015 ROHM Co., Ltd. All rights reserved. 3/ Rev.001
4 lbody diode electrical characteristics (Source-Drain) (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Continuous forward current I S *1 T C = A Pulse forward current I SP * A Forward voltage V SD *6 V GS = 0V, I S = 11A V Reverse recovery time t *6 rr ns Reverse recovery charge Q *6 rr I S = 11A di/dt = 100A/μs μc Peak reverse recovery current I *6 rrm A ltypical transient thermal characteristics Symbol Value Unit Symbol Value Unit R th C th R th K/W C th Ws/K R th C th ROHM Co., Ltd. All rights reserved. 4/ Rev.001
5 lelectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Avalanche Energy Derating Curve vs. Junction Temperature 2015 ROHM Co., Ltd. All rights reserved. 5/ Rev.001
6 lelectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 2015 ROHM Co., Ltd. All rights reserved. 6/ Rev.001
7 lelectrical characteristic curves Fig.6 Breakdown Voltage vs. Junction Temperature Fig.7 Typical Transfer Characteristics Fig.8 Gate Threshold Voltage vs. Junction Temperature Fig.9 Forward Transfer Admittance vs. Drain Current 2015 ROHM Co., Ltd. All rights reserved. 7/ Rev.001
8 lelectrical characteristic curves Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.11 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.12 Static Drain - Source On - State Resistance vs. Drain Current(l) 2015 ROHM Co., Ltd. All rights reserved. 8/ Rev.001
9 lelectrical characteristic curves Fig.13 Typical Capacitance vs. Drain - Source Voltage Fig.14 Switching Characteristics Fig15 Dynamic Input Characteristics 2015 ROHM Co., Ltd. All rights reserved. 9/ Rev.001
10 lelectrical characteristic curves Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.17 Reverse Recovery Time vs. Inverse Diode Forward Current 2015 ROHM Co., Ltd. All rights reserved. 10/ Rev.001
11 lmeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 dv/dt Measurement Circuit Fig.5-2 dv/dt Waveform 2015 ROHM Co., Ltd. All rights reserved. 11/ Rev.001
12 ldimensions 2015 ROHM Co., Ltd. All rights reserved. 12/ Rev.001
13
14 Datasheet R6011KNJ - Web Page Distribution Inventory Part Number R6011KNJ Package LPTS(D2PAK) Unit Quantity 1000 Minimum Package Quantity 1000 Packing Type Taping Constitution Materials List inquiry RoHS Yes
CPT3. Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 16 Switching Power Supply Basic ordering unit (pcs) 2500
R6002END Nch 600V 2A Power MOSFET Datasheet V DSS 600V R DS(on) (Max.) 3.4Ω I D P D ±1.7A 20W loutline CPT3 lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed
More informationTO-3PF. Reel size (mm) - lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 360 Taping code
R6015ANZ Nch 600V 15A Power MOSFET Datasheet V DSS 600V R DS(on) (Max.) 0.3Ω I D ±15A P D 110W lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be
More informationTO-220FM. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500
R5016ANX Nch 500V 16A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 0.27Ω I D ±16A P D 50W loutline TO-220FM lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS )
More informationTO-220FM. Not Recommended for. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500
R5005CNX Nch 500V 5A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 1.6Ω I D ±5A P D 40W lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be ±30V.
More informationTSMT8. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RQ1E050RP Pch -30V -5A Middle Power MOSFET Datasheet V DSS -30V R DS(on) (Max.) 31mΩ I D ±5A P D 1.5W lfeatures 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(tsmt8).
More informationTSMT3. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RQ5E025AT Pch -30V -2.5A Middle Power MOSFET Datasheet V DSS -30V R DS(on) (Max.) I D P D 91mΩ ±2.5A 1W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT3). 3) Pb-free lead plating
More informationHSMT8. Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 12 Switching Basic ordering unit (pcs) 3000
RQ3E180AJ Nch 30V 18A Middle Power MOSFET Datasheet V DSS R DS(on) (Max.) 30V 4.5mΩ I D ±30A P D 2W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant
More informationTSST8. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RT1A060AP Pch -12V -6A Middle Power MOSFET Datasheet V DSS -12V R DS(on) (Max.) 19mΩ I D ±6A P D 1.25W lfeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface
More informationHUML2020L8 DFN2020-8S. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RF4E080GN Nch 30V 8A Middle Power MOSFET Datasheet V DSS R DS(on) (Max.) 30V 17.6mΩ I D ±8A loutline HUML2020L8 P D 2W DFN2020-8S lfeatures 1) Low on - resistance. 2) High power small mold package (HUML2020L8).
More informationTSMT8. Embossed Tape lapplication Reel size (mm) 180 Switching Type Tape width (mm) 8 Basic ordering unit (pcs) 3000 Taping code
QH8MA3 30V Nch+Pch Middle Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Pch TSMT8 V DSS 30V -30V R DS(on) (Max.) 29mΩ 48mΩ I D ±7.0A ±5.5A P D 2.5W lfeatures 1) Low on - resistance. 2) Small Surface
More informationTSMT3. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RQ5L015SP Pch -60V -1.5A Middle Power MOSFET Datasheet V DSS -60V R DS(on) (Max.) I D P D 280mΩ ±1.5A 1W lfeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT3). 3) Pb-free lead plating
More informationTSMT6. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
RRQ020P03 Pch -30V -2A Middle Power MOSFET Datasheet V DSS -30V R DS(on) (Max.) 160mΩ I D ±2A P D 1.25W lfeatures 1) Low on - resistance. 2) High Power small mold Package (TSMT6). 3) Pb-free lead plating
More informationTSMT5. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Switching Basic ordering unit (pcs) 3000
QS5U36 1.5V Drive Nch+SBD MOSFET Datasheet V DSS R DS(on) (Max.) I D 20V 133mΩ ±2.5A P D 1.25W loutline TSMT5 lfeatures 1) The QS5U36 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5
More informationTSMT5. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Load switch, DC/ DC conversion Basic ordering unit (pcs) 3000
QS5U27 2.5V Drive Pch+SBD MOSFET Datasheet V DSS -20V R DS(on) (Max.) 340mΩ I D ±1.5A P D 1.25W loutline TSMT5 lfeatures 1) The QS5U27 combines Pch MOSFET with a Schottky barrier diode in a single TSMT5
More informationTSMT5. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Load switch, DC/ DC conversion Basic ordering unit (pcs) 3000
QS5U13 2.5V Drive Nch+SBD MOSFET Datasheet V DSS R DS(on) (Max.) I D 30V 154mΩ ±2.0A P D 1.25W loutline TSMT5 lfeatures 1) The QS5U13 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5
More informationParameter Symbol Value Unit Drain - Source voltage V DSS 600 V Continuous drain current (T c = 25 C) I D. ±30 A Pulsed drain current I DP
R6030KNX Nch 600V 30A Power MOSFET Datasheet V DSS 600V R DS(on) (Max.) 0.130Ω loutline I D ±30A TO-220FM P D 86W lfeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy.
More informationParameter Symbol Value Unit Drain - Source voltage V DSS 600 V. ±21.3 A Pulsed drain current I DP
R6046FNZ Nch 600V 46A Power MOSFET Datasheet V DSS 600V R DS(on) (Max.) 93mΩ loutline I D ±46A TO-3PF P D 130W lfeatures 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed.
More informationlpackaging specifications Switching Packing Embossed Tape Packing code
R6509ENJ Nch 650V 9A Power MOSFET Datasheet loutline V DSS 650V LPT(S) R DS(on) (Max.) 0.585Ω I D ±9A P D 94W lfeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating
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Nch 25V 5.A Power MOSFET Datasheet Outline V DSS 25V LPT(S) (2) R DS(on) (Max.) 36mW I D 5.A (SC-83) P D 3W () (3) Features ) Low on-resistance. Inner circuit 2) Fast switching speed. 3) Drive circuits
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RD3S100CN Nch 190V 10A Power MOSFET Datasheet loutline V DSS 190V TO-252 R DS(on) (Max.) 182mΩ I D ±10A P D 85W lfeatures 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4)
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Nch 6V 2A Power MOSFET Outline V DSS 6V TO-3PF R DS(on) (Max.).96W I D P D 2A 2W () (2)(3) Features ) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be 2V. 4)
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Nch 6V 35A Power MOSFET Outline V DSS 6V TO-247 R DS(on) (Max.).2W I D P D 35A 2W (3) () (2) Features ) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be 2V.
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RD3T100CN Nch 200V 10A Power MOSFET Datasheet V DSS 200V loutline R DS(on) (Max.) 182mΩ DPAK I D ±10A TO-252 P D 85W lfeatures 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple
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HS8K11 30V Nch+Nch Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Nch V DSS 30V 30V R DS(on) (Max.) 17.9mΩ 13.3mΩ HSML3030L10 I D ±7A ±11A P D 2.0W lfeatures 1) Low on - resistance 2) Pb-free lead
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More informationEmbossed Tape lapplication Reel size (mm) 180 Switching Type Tape width (mm) 8 Basic ordering unit (pcs) 3000
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