4V Drive Nch + Pch MOSFET SH8M13

Transcription

1 4V Drive Nch + Pch MOSFET SH8M3 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). (8) (5) () (4) Application Switching Packaging specifications Package Taping Type Code TB Basic ordering unit (pieces) 25 SH8M3 Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Tr : N-ch Tr2 : P-ch Unit Drain-source voltage V DSS 3 3 V Gate-source voltage V GSS ±2 ±2 V Drain current Continuous I D A I DP * A Source current Continuous I s.6.6 A (Body Diode) I sp * A Total power dissipation *2 P D 2. W / TOTAL.4 W / ELEMENT Channel temperature Tch 5 C Range of storage temperature Tstg 55 to 5 C Inner circuit () Tr Source (2) Tr Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr Drain (8) Tr Drain 2 (8) (7) 2 (6) (5) () (2) (3) (4) ESD PROTECTION DIODE 2 BODY DIODE * Pw s, Duty cycle % *2 Mounted on a ceramic board. 2 ROHM Co., Ltd. All rights reserved. / Rev.A

2 SH8M3 Electrical characteristics (Ta = 25 C) <Tr(Nch)> Symbol Min. Typ. Max. Unit Gate-source leakage I GSS - - ± A V GS =±2V, V DS =V Drain-source breakdown voltage V (BR)DSS V I D =ma, V GS =V Zero gate voltage drain current I DSS - - A V DS =3V, V GS =V Gate threshold voltage V GS (th) V V DS =V, I D =ma I D =6.A, V GS =V m I D =6.A, V GS =4.5V I D =6.A, V GS =4.V Forward transfer admittance l Y fs l* S V DS =V, I D =6.A Input capacitance C iss pf V DS =V Output capacitance C oss pf V GS =V Reverse transfer capacitance C rss pf f=mhz Turn-on delay time t d(on) * ns I D =3.A, V DD 5V Rise time t r * ns V GS =V Turn-off delay time t d(off) * ns R L =5 Fall time t f * ns R G = Total gate charge Q g * nc I D =6.A Gate-source charge Q gs * nc V DD 5V Gate-drain charge Q gd * nc V GS =5V * Parameter Static drain-source on-state resistance * R DS (on) Conditions Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward Voltage V SD * V I s =6.A, V GS =V * 2 ROHM Co., Ltd. All rights reserved. 2/ Rev.A

3 SH8M3 Electrical characteristics (Ta = 25 C) <Tr2(Pch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I GSS - - ± A V GS =±2V, V DS =V Drain-source breakdown voltage V (BR)DSS V I D = ma, V GS =V Zero gate voltage drain current I DSS - A V DS = 3V, V GS =V Gate threshold voltage V GS (th) V V DS = V, I D = ma Static drain-source on-state resistance I D = 7.A, V GS = V m I D = 3.5A, V GS = 4.5V I D = 3.5A, V GS = 4.V Forward transfer admittance l Y fs l* S I D = 7.A, V DS = V Input capacitance C iss pf V DS = V Output capacitance C oss pf V GS =V Reverse transfer capacitance C rss pf f=mhz Turn-on delay time t d(on) * ns I D = 3.5A, V DD 5V Rise time t r * ns V GS = V Turn-off delay time t d(off) * ns R L =4.29 Fall time t f * ns R G = Total gate charge Q g * - 8 nc I D = 7.A Gate-source charge Q gs * nc V DD 5V Gate-drain charge Q gd * nc V GS = 5V * * R DS (on) Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward Voltage V SD * V I s = 7.A, V GS =V * 2 ROHM Co., Ltd. All rights reserved. 3/ Rev.A

4 . SH8M3 Electrical characteristic curves (Ta=25 C) Tr.(Nch) Fig. Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) 6 6 DRAIN CURRENT : I D [A] V GS = V V GS = 4.5V V GS = 4.V V GS = 3.V DRAIN CURRENT : I D [A] V GS = V V GS = 4.5V V GS = 4.V V GS = 3.V V GS = 2.5V V GS = 2.5V DRAIN-SOURCE VOLTAGE : V DS [V] DRAIN-SOURCE VOLTAGE : V DS [V] Fig.3 Typical Transfer Characteristics Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) DRAIN CURRENT : I D [A].. V DS = V T a =75 C T a =-25 C V GS = 4.V V GS = 4.5V V GS = V. 2 3 GATE-SOURCE VOLTAGE : V GS [V].. DRAIN-CURRENT : I D [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) V GS = V T a =75 C T a =-25 C V GS = 4.5V T a =75 C T a =-25 C. DRAIN-CURRENT : I D [A]. DRAIN-CURRENT : I D [A] 2 ROHM Co., Ltd. All rights reserved. 4/ Rev.A

5 SH8M3 V GS = 4.V Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) T a =75 C T a =-25 C. DRAIN-CURRENT : I D [A] FORWARD TRANSFER ADMITTANCE : Yfs [S] V DS = V Fig.8 Forward Transfer Admittance vs. Drain Current T a =75 C T a =-25 C... DRAIN-CURRENT : I D [A] SOURCE CURRENT : Is [A]. V GS =V Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage T a =75 C T a =-25 C RESISTANCE : R DS ( ON )[mω] Fig. Static Drain-Source On-State Resistance vs. Gate Source Voltage I D = 3.A I D = 6.A..5.5 SOURCE-DRAIN VOLTAGE : V SD [V] GATE-SOURCE VOLTAGE : V GS [V] Fig. Switching Characteristics Fig.2 Dynamic Input Characteristics SWITCHING TIME : t [ns] t d(on) t r t f t d(off) V DD =5V V GS =V R G =W GATE-SOURCE VOLTAGE : V GS [V] V DD = 5V I D = 6.A R G =W.. DRAIN-CURRENT : I D [A] TOTAL GATE CHARGE : Qg [nc] 2 ROHM Co., Ltd. All rights reserved. 5/ Rev.A

6 SH8M3 Fig.3 Typical Capacitance vs. Drain-Source Voltage Fig.4 Maximum Safe Operating Aera Operation in this area is limited by R DS(ON) (V GS =V) CAPACITANCE : C [pf] f=mhz V GS =V C rss C oss C iss.. DRAIN-SOURCE VOLTAGE : V DS [V] DRAIN CURRENT : I D (A) P W =us P W =ms P W = ms. DC operation Single Pulse : Unit Mounted on a ceramic board. (3mm 3mm.8mm).. DRAIN-SOURCE VOLTAGE : V DS [V] Fig.5 Normalized Transient Thermal Resistance vs. Pulse Width NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t). Single Pulse : Unit Mounted on a ceramic board. (3mm 3mm.8mm) Rth (ch-a) =89.3 C/W Rth (ch-a) (t)=r(t) Rth (ch-a).... PULSE WIDTH : Pw(s) 2 ROHM Co., Ltd. All rights reserved. 6/ Rev.A

7 SH8M3 Tr.2(Pch) Fig. Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) DRAIN CURRENT : -I D [A] V GS =-3.V V GS =-V V GS =-4.5V V GS =-4.V V GS =-2.5V DRAIN CURRENT : -I D [A] V GS =-V V GS =-4.5V V GS =-4.V V GS =-3.V V GS =-2.5V DRAIN-SOURCE VOLTAGE : -V DS [V] DRAIN-SOURCE VOLTAGE : -V DS [V] V DS =-V Fig.3 Typical Transfer Characteristics Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) DRAIN CURRENT : -I D [A].. T a = 25 C T a = 75 C T a = 25 C T a = - 25 C V GS =-4.V V GS =-4.5V V GS =-V. 2 3 GATE-SOURCE VOLTAGE : -V GS [V]. DRAIN-CURRENT : -I D [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) V GS = -V T a = 25 C T a = 75 C T a = 25 C T a = - 25 C V GS = -4.5V T a = 25 C T a = 75 C T a = 25 C T a = - 25 C. DRAIN-CURRENT : -I D [A]. DRAIN-CURRENT : -I D [A] 2 ROHM Co., Ltd. All rights reserved. 7/ Rev.A

8 SH8M3 V GS = -4.V Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) T a = 25 C T a = 75 C T a = 25 C T a = - 25 C. DRAIN-CURRENT : -I D [A] FORWARD TRANSFER ADMITTANCE : Yfs [S] V DS =-V Fig.8 Forward Transfer Admittance vs. Drain Current T a = 25 C T a = 75 C T a = 25 C T a = - 25 C... DRAIN-CURRENT : -I D [A] V GS =V Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Fig. Static Drain-Source On-State Resistance vs. Gate Source Voltage SOURCE CURRENT : -I s [A]. T a = 25 C T a = 75 C T a = 25 C T a = - 25 C RESISTANCE : R DS ( ON )[mω] I D = -3.5A I D = -7.A..5.5 SOURCE-DRAIN VOLTAGE : -V SD [V] 5 5 GATE-SOURCE VOLTAGE : -V GS [V] SWITCHING TIME : t [ns] t d(on) Fig. Switching Characteristics t f t d(off) V DD =-5V V GS =-V R G =W.. DRAIN-CURRENT : -I D [A] t r GATE-SOURCE VOLTAGE : -V GS [V] Fig.2 Dynamic Input Characteristics V DD = -5V I D = -7.A R G =W 2 3 TOTAL GATE CHARGE : Qg [nc] 2 ROHM Co., Ltd. All rights reserved. 8/ Rev.A

9 SH8M3 Fig.3 Typical Capacitance vs. Drain-Source Voltage Fig.4 Maximum Safe Operating Aera C iss Operation in this area is limited by R DS(ON) (V GS =-V) CAPACITANCE : C [pf] f=mhz V GS =V C rss C oss.. DRAIN-SOURCE VOLTAGE : -V DS [V] DRAIN CURRENT : -I D (A) P W =us P W =ms P W = ms. Single Pulse : Unit DC operation Mounted on a ceramic board. (3mm 3mm.8mm).. DRAIN-SOURCE VOLTAGE : -V DS [V] Fig.5 Normalized Transient Thermal Resistance vs. Pulse Width Single Pulse : Unit NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t).. Mounted on a ceramic board. (3mm 3mm.8mm) Rth (ch-a) =89.3 C/W Rth (ch-a) (t)=r(t) Rth (ch-a).... PULSE WIDTH : Pw(s) 2 ROHM Co., Ltd. All rights reserved. 9/ Rev.A

10 SH8M3 Measurement circuits <Tr(Nch)> Pulse width ID RL VDS % 5% 9% 5% D.U.T. VDS % % RG VDD 9% 9% td(on) tr td(off) tf ton toff Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms ID RL VDS VG Qg IG(Const.) D.U.T. VDD Qgs Qgd Charge Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform <Tr2(Pch)> Pulse Width ID RL VDS % 5% 9% 5% D.U.T. % % RG VDD VDS td(on) 9% 9% tr td(off) tf ton toff Fig.3- Switching Time Measurement Circuit Fig.3-2 Switching Waveforms VG ID VDS Qg RL IG(Const.) D.U.T. Qgs Qgd VDD Charge Fig.4- Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 2 ROHM Co., Ltd. All rights reserved. / Rev.A

11 Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System 2 ROHM Co., Ltd. All rights reserved. R2A

12 Datasheet SH8M3 - Web Page Distribution Inventory Part Number SH8M3 Package SOP8 Unit Quantity 25 Minimum Package Quantity 25 Packing Type Taping Constitution Materials List inquiry RoHS Yes