PPM723T201E0 P-Channel MOSFET

Transcription

1 PPM723T2E Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. D(3) MOSFET Product Summary V DS(V) R DS(on)(Ω ) I D(mA).45@ -2.62@ -8 G().86@ =-.8V S(2) Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage V DS -2 V Gate-Source Voltage ± V Continuous Drain Curren(T J=5 ) Source current(body diode) Continuous I D -8 I DP -2 Continuous I S -5 I SP -2 ma ma Total power dissipation P D 5 mw Channel temperature T CH 5 Range of storage temperature T STG -55 to +5 Thermal resistance Parameter Symbol Limits Units Channel to ambient Rth(ch-a) 833 /W Rev.6.

2 PPM723T2E Electrical characteristics per ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Drain-Source Breakdown Voltage BV DSS I D =-ma,=v -2 - V Zero Gate Voltage Drain Current I DSS V DS =-2V,=V μa Gate-Body Leakage Current I GSS V DS =V,=±8V - - ± μa Gate Threshold Voltage (th) V DS =-V, I D =-μa V, I D =-7mA Ω Static Drain-Source On-Resistance R DS(ON), I D =-3mA Ω =-.8V, I D =-25mA.86.2 Ω Forward transfer admittance Yfs V DS=-V, I D =-2mA.3 s Input Capacitance C ISS - pf Output Capacitance C OSS =V, V DS =-V, f=mhz - 9 pf Reverse Transfer Capacitance C RSS - 5 pf Turn-On Delay Time t d(on) - 5 ns Turn-Off Delay Time Turn-On Rise Time t d(off) t r V DD -V, =-4.5V, R G=Ω,R L Ω I D =-ma ns ns Turn-On Fall Time t f - 3 ns Total Gate Charge Qg V DD -V, =-4.5V,.4 nc Gate-Source Charge Qgs I D =-2mA.3 nc Gate-Drain Charge Qgd R G=Ω,R L 5Ω.3 nc Drain-Source Diode Forward Voltage V SD =V,I S=-2mA V Rev

3 Static Drain-Source On-State Resistance: RDS(ON)(mΩ) Drain current: ID (A) Static Drain-Source On-State Resistance: RDS(ON)(mΩ) Drain Current: ID(A) Drain Current:ID(A) PPM723T2E Typical Characteristics.2 =-.V.2.5. =-.5V =-3.2V =-2.V =-.8V.5. =-.8V =-.5V =-.2V.5 =-.2V =-.V.5 =-.V Drain-Source Voltage :V DS (V) Drain-Source Voltage :V DS (V) Fig. Typical output characteristics(Ⅰ) Fig 2. Typical output characteristics(Ⅱ) V DS=-V... T A= Gate-Source Voltage : (V) Fig 3. Typical transfer characteristics =-.5V =-.8V... Drain Current :I D (A) Fig 4. Static drain-source on-state resistance vs. drain current(Ⅰ) =-.2V Static drain-source on-state resistance: RDS(ON) (mω) T A=25 T A=25... Drain current :I D (A) Fig 5. Static drain-source on-state resistance vs. drain current(Ⅱ)... Drain Current :I D (A) Fig 6. Static drain-source on-state resistance vs. drain current(Ⅲ) Rev

4 Switching time: t(ns) Gate-source voltage: VGS(V) Reverse drain current: IS(A) Forward transfer admittance: Yfs (S) PPM723T2E Static drain-source on-state resistance: RDS(ON) (mω) =-.8V T A=25. V DS=-V T A=25... Drain current :I D (A) Fig 7. Static drain-source on-state resistance vs. drain current(Ⅳ)... Drain Current :I D (A) Fig 8. Forward transfer admittance vs. drain current. =V T A=25 Static drain-source on-state resistance: RDS(ON) (Ω) I D=-.2A I D=-.A..5.5 Source-Drain Voltage:V SD (V) Fig 9. Reverse drain current vs. source-drain voltage Gate-source voltage : (V) Fig. Static drain-source on-state resistance vs. gate source voltage t d(off) t f V DD=-V R G=Ω t r t d(on).. Drain-current: I D(A) Fig. Switching characteristics 2 V DD=-V I D=-.2A R G=Ω.5.5 Total gate charge: Qg (nc) Fig 2. Dynamic input characteristics Rev

5 Capacitance: C(pF) PPM723T2E f=mhz =V C ISS C OSS C RSS.. Drain-source voltage: V DS(V) Fig 3. Typical capacitance vs. drain-source voltage Measurement circuit I D Pulse width R L V DS % 5% 5% 9% R G D.U.T V DD % % V DS 9% 9% t d(on) t r t d(off) t f t off t on Fig.- Switching time measurement circuit Fig.-2 Switching time waveforms I D V DS V G I G(Const.) D.U.T R L Qg R G V DD Qgs Qgd Charge Fig.2- Gate charge measurement circuit Fig.2-2 Gate charge waveform Rev

6 .2.2±.25.4 (.).437± PPM723T2E Product dimension (SOT-723) R.-R.5 9 (4x) Side View.2±.3.8±.25 Bottom View (2) () (3) Unit:mm.6.6 Unit:mm Ordering information Device Package Shipping PPM723T2E SOT-723 (Pb-Free) / Tape & Reel Rev

7 PPM723T2E IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 29, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev