PPMT30V3 P-Channel MOSFET

Transcription

1 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D V GS =-1V -3.75@ V GS =-4.5V -3 G(1) Electrical characteristics per line@25 ( unless otherwise specified) S(2) Parameter Symbol Conditions Min. Typ. Max. Units OFF/ON CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =-25μA,V GS =V -3 - V Zero Gate Voltage Drain Current I DSS V DS =-3V,V GS =V μa Gate-Body Leakage Current I GSS V DS =V,V GS =±2V - - ±1 na Gate Threshold Voltage V GS(th) V DS =V GS, I D =-25μA V Static Drain-Source On-Resistance a R DS(ON) V GS =-4.5V, I D =-2.5A mω V GS =-1V, I D =-3.2A mω DYNAMIC PARAMETERS Input Capacitance C ISS - 46 pf Output Capacitance C OSS V GS =V, V DS =-15V, f=1mhz - 74 pf Reverse Transfer Capacitance C RSS - 23 pf SWITCHING PARAMETERS Turn-On Delay Time t d(on) - 33 ns Turn-Off Delay Time t d(off) V DS =-15V, V GS =-1V, - 39 ns Turn-On Rise Time t r R G =6Ω,R L =15Ω - 17 ns Turn-On Fall Time t f - 5 ns Total Gate Charge Qg V DS =-15V, V GS =-1V, I D =-1.7A 14 nc Total Gate Charge Qg 6.8 nc Gate-Source Charge Qgs V DS =-15V, V GS =-4.5V, I D =-1.7A 2.8 nc Gate-Drain Charge Qgd 2.3 nc Gate resistance Rg V DS =V,V GS =V,f=1MHz 3.5 Ω Drain-Source Diode Forward Voltage V SD V GS =V,I S =-1.A V Rev.6 1

2 Absolute maximum Parameter Symbol Value Units Drain-Source Voltage V DS -3 V Gate-Source Voltage V GS ±2 V Continuous Drain Curren(T J =15 ) T A =7-2.5 Pulsed Drain Current I DM -12 A Maximum Power Dissipation I D P D T A =7.67 Operating Junction and Storage Temperature Range T J -55 to 15 Thermal Resistance-Junction to Ambient R θja 12 /W A W Typical Characteristics On Resistance (Normalized) RDS(ON) On-Resistance(Ω).8.6 V GS =-4.5V V GS =-1V T J -Junction Temperature( ) I D -Drain Current (A) Fig 1. On Resistance vs. Junction Temperature Fig 2. On-Resistance vs. Drain Current 6.24 C ISS C-Capacitance (pf) 4 2 C OSS RDS(ON) On-Resistance(Ω) I D =-3.2A C RSS V DS -Drain-to-Source Voltage(V) Fig 3. Capacitance V GS -Gate-to-Source Voltage (V) Fig 4. On-Resistance vs. Gate-to-Source Voltage Rev.6 2

3 V~-1V -4V VGS(th)-Variance(V).1.2 I D =25μA ID Drain Current (A) V GS =-3V T J -Temperature ( ) Fig 5. Threshold Voltage V GS -Drain-to-Source Voltage (V) Fig 6. On-Region Characteristics -1-1 VGS-Gate-to-Source Voltage (V) V DS =-15V I D =-1.7A IS Source Current (A) QG-Total Gate Charge(nC) Fig 7. Gate Charge V SD -Source-to-Drain Voltage (V) Fig 8. On-Resistance vs. Drain Current -1.4 ID-Drain Current(A) 1 1 R DS(ON) limited 1ms 1us 1 1ms DC 1s 1ms 1s V DS -Drain- Source Voltage(V) Fig 9. Maximum Forward Biased Safe Operating Area P (PK) Peak Transient Power (W) E-4 1E-3 1E-2 1E-1 1E- 1E+1 1E+2 t1-time (sec) Fig 1. Single Pulse Maximum Power Dissipation Rev.6 3

4 Normalized Effective Transient Thermal Impedance 1E 1E-1 7% 5% 3% 1% 5% 2% t1 t2 1E-2 1%.5% 1. Duty Cyde, D= t1 t2.2% 2. Per Unit Base=Rth JA =12 /W (t) 3.T JM -T A =P DM Zth JA Sing Pulse Curve 4.Surface Mounted 1E-3 1E-5 1E-4 1E-3 1E-2 1E-1 1E 1E1 1E2 1E3 1E4 Square Wave Pulse Duration (sec) Fig 11.Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: P DM Product dimension(sot-23) A (3) θ C B (1) (2) D F E H G K J L Rev.6 4

5 Dim Millimeters Inches MIN MAX MIN MAX A B C D E F G H J K L θ 1 1 Rev.6 5

6 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 29, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.6 6