N-Channel 60-V (D-S), 175 C MOSFET
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1 N-Channel -V (D-S), 75 C MOSFET Si4559EY V DS (V) r DS(on) ( ) (A) N-Channel V GS = V V GS = 4.5 V V GS = V V GS = 4.5 V.8 D D S SO-8 S 8 D G 7 D S 3 D G 4 5 D G G Top View S N-Channel MOSFET D D P-Channel MOSFET Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS Gate-Source Voltage V GS T A = 5 C Continuous Drain Current (T J = 75 C) a T A = 7 C 3.8. Pulsed Drain Current M 3 3 V A Continuous Source Current (Diode Conduction) a I S.. Maximum Power Dissipation a T A = 5 C T A = 7 C.4 P D.7 W Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C Parameter Symbol N- or P- Channel Unit Maximum Junction-to-Ambient a R thja.5 C/W Notes a. Surface Mounted on FR4 Board, t sec. Document Number: 77 FaxBack
2 Static Parameter Symbol Test Condition Min Typ a Max Unit V DS = V GS, = 5 A N-Ch Gate Threshold Voltage V GS(th) V DS = V GS, = 5 A P-Ch N-Ch Gate-Body Leakage I GSS V DS = V, V GS = V P-Ch V DS = V, V GS = V N-Ch V DS = V, V GS = V P-Ch Zero Gate Voltage Drain Current SS V DS = V, V GS = V, T J = 55 C N-Ch 5 V na A V DS = V, V GS = V, T J = 55 C P-Ch 5 V DS 5 V, V GS = V N-Ch On-State Drain Current b (on) V DS 5 V, V GS = V P-Ch A V GS = V, = 4.5 A N-Ch V GS = V, = 3. A P-Ch.. Drain-Source On-State Resistance b r DS(on) V GS = 4.5 V, = 3.9 A N-Ch V GS = 4.5 V, =.8 A P-Ch.5.5 V DS = 5 V, = 4.5 A N-Ch 3 Forward Transconductance b g fs V DS = 5 V, = 3. A P-Ch 7.5 S I S =. A, V GS = V N-Ch.9. Diode Forward Voltage b V SD I S =. A, V GS = V P-Ch.8. V Dynamic a N-Ch 9 3 Total Gate Charge Q g N-Channel P-Ch 5 V DS = 3 V, V GS = V, = 4.5 A N-Ch 4 Gate-Source Charge Q gs P-Channel P-Ch 4 V DS = 3 V, V GS = V = 3.A N-Ch 3 Gate-Drain Charge Q gd P-Ch. nc N-Ch 3 Turn-On Delay Time t d(on) P-Ch 8 5 N-Channel N-Ch Rise Time t r V DD = 3 V, R L = 3 A, V GEN = V, R G = P-Ch P-Channel N-Ch 3 Turn-Off Delay Time t d(off) V VDD = 3 V, R L = 3 P-Ch I = = 5 D A, V GEN V, R G N-Ch Fall Time t f P-Ch 35 5 ns I F = A, di/dt = A/ s N-Ch 35 Source-Drain Reverse Recovery Time t rr I F = A, di/dt = A/ s P-Ch 9 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 3 s, duty cycle %. FaxBack Document Number: 77
3 3 Output Characteristics 3 Transfer Characteristics V GS = thru 5 V T C = 55 C V C 5 C, V 3 V On-Resistance vs. Drain Current 4 Capacitance V DS = 3 V = 4.5 A V GS = 4.5 V Gate Charge V GS = V C Capacitance (pf) (Normalized) C rss V GS = V = 4.5 A C oss C iss On-Resistance vs. Junction Temperature Q g Total Gate Charge (nc) T J Junction Temperature ( C) Document Number: 77 FaxBack
4 Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage Source Current (A) I S T J = 75 C T J = 5 C = 4.5 A V SD Source-to-Drain Voltage (V) Threshold Voltage 5 Single Pulse Power. 4 Variance (V) VGS(th)...4. = 5 µa Power (W) T J Temperature ( C).. 3 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Notes: P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja =.5 C/W 3. T JM T A = P DM Z (t) thja 4. Surface Mounted Square Wave Pulse Duration (sec) FaxBack Document Number: 77
5 3 Output Characteristics Transfer Characteristics V GS =, 9, 8, 7, V T C = 55 C 4 5 C 8 5 V 4 V 8 5 C 4 3 V On-Resistance vs. Drain Current 4 Capacitance V DS = 3 V = 3. A V GS = 4.5 V Gate Charge V GS = V C Capacitance (pf) (Normalized) C rss C oss V GS = V = 3. A C iss On-Resistance vs. Junction Temperature Q g Total Gate Charge (nc) T J Junction Temperature ( C) Document Number: 77 FaxBack
6 Source-Drain Diode Forward Voltage.5 On-Resistance vs. Gate-to-Source Voltage Source Current (A) I S T J = 75 C T J = 5 C = 3. A V SD Source-to-Drain Voltage (V).75 Threshold Voltage 5 T C = 5 C Single Pulse Single Pulse Power.5 4 Variance (V) VGS(th).5. = 5 µa Power (W) T J Temperature ( C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse. 4 3 Square Wave Pulse Duration (sec) Notes: P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja =.5 C/W 3. T JM T A = P DM Z (t) thja 4. Surface Mounted 3 FaxBack Document Number: 77
7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8
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