PNMT45V2 2.5V Drive N-Channel MOSFET

Transcription

1 PNMT45V2 2.5V Drive N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (mω) I D (A) 1@ V GS =1V 45 11@ V GS =4.5V 2 G(1) S(2) Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V DS 45 V Gate-Source Voltage V GS ±12 V Drain Current Continuous I D 2. A Pulsed I D 8 A Source diode) current(body Continuous I S.8 A Pulsed I SP 8 A Total Power Dissipation P D 1. W Channel temperature Tch 15 C Range of storage temperature Tstg -55 to +15 C Thermal resistance Parameter Symbol Limits Units Channel to ambient Rth(ch-a)* 125 /W Body diode characteristics(source-drain)(ta=25 ) Parameter Symbol Min. Typ. Max. Units Conditions Forward voltage V SD V I S =.8A,V GS =V Rev

2 Electrical characteristics per ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =1mA,V GS =V 45 - V Zero Gate Voltage Drain Current I DSS V DS =45V,V GS =V μa Gate-Body Leakage Current I GSS V DS =V,V GS =12V μa Gate Threshold Voltage V GS(th) V DS =1V, I D =1mA V Static Drain-Source On-Resistance R DS(ON) V GS =1V, I D =2.A mω V GS =4.5V, I D =2.A mω DYNAMIC PARAMETERS Input Capacitance C ISS - 24 pf Output Capacitance C DSS V GS =V, V DS =1V, f=1mhz - 3 pf Reverse Transfer Capacitance C RSS - 2 pf SWITCHING PARAMETERS Turn-On Delay Time t d(on) ns Rise time Turn-Off Delay Time tr t d(off) V DS =25V, V GS =4.5V, R L =25Ω, R G =1Ω, I D =1.A ns ns Fall time t f ns Total gate charge Q g V DS =25V, V GS =4.5V, nc Gate-source charge Q gs R L =12.5Ω, R G =1Ω, nc I D =2.A Gate-drain charge Q gd nc Typical Characteristics 1 V GS =1 thru 5V.3 ID -Drain Current (A) V GS =4V RDS(ON) On-Resistance (Ω) V GS =4.5V V GS =1V V DS -Drain-Source Voltage (V) Fig 1. Output characteristics I D -Drain Current (A) Fig 2. Drain-Source On-Resistance Rev

3 4 2. ID -Drain Current (A) T C =25 T C =125 Normalized On-Resistance V GS =1V V GS =4.5V T C = V GS -Gate-Source Voltage (V) Fig 3. Transfer Characteristics I D =2A T J -Junction Temperature ( ) Fig 4. Drain-Source On-Resistance.3 36 RDS(ON) On-Resistance (mω) I D =2A.25.2 T J =125 5 T J = V GS -Gate-Source Voltage (V) C-Capacitance (pf) C RSS C ISS C OSS V DS -Drain-Source Voltage (V) Fig 5. R DS(ON) vs. V GS Fig 6. Capacitance vs. V DS 1 R DS(ON) Limited 1us ID -Drain Current (A) 1 1 1ms 1ms 1ms T A =25 Single Pulse DC BV DSS Limited 1 1 V DS -Drain-Source Voltage: (V) Figure 7. Safe Operation Area 1s,1s 1 Rev

4 t (t), Normalized Effective Transient Thermal Impedance Duty Cycle= Notes: t1 t2 1. Duty Cycle, D= t1 t2 2. Per Unit Base=Rth JA =1 /W Single Pulse (t) 3.T JM -T A =P DM Zth JA 4.Surface Mounted Square Wave Pulse Duration (sec) Fig 8.Normalized Maximum Transient Thermal Impedance P DM Product dimension(sot-23) A (3) θ C B (1) (2) F D E H G K J L Rev

5 Dim Millimeters Inches MIN MAX MIN MAX A B C D E F G H J K L θ 1 1 a b Dim MIN Millimeters MAX a d a --.7 b c b d c Ordering information Device Package Shipping PNMT45V2 SOT-23 (Pb-Free) 3 / Tape & Reel Rev

6 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 29, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev