PNMT20V3 N-Channel MOSFET

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1 PNMTV3 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A).3@ V GS =.5V 3 G(1) Electrical characteristics per line@5 ( unless otherwise specified) S() Parameter Symbol Conditions Min. Typ. Max. Units OFF/ON CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS I D =5μA,V GS =V - V Zero Gate Voltage Drain Current I DSS V DS =V,V GS =V μa Gate-Body Leakage Current I GSS V DS =V,V GS =±8V - - ±1 na Gate Threshold Voltage V GS(th) V DS =V GS, I D =5μA.6-1. V Static Drain-Source On-Resistance R DS(ON) V GS =.5V, I D =.8A Ω V GS =.5V, I D =.A Ω DYNAMIC PARAMETERS Input Capacitance C ISS - 5 pf Output Capacitance C OSS V GS =V, V DS =1V, f=1mhz - 7 pf Reverse Transfer Capacitance C RSS - 3 pf SWITCHING PARAMETERS Turn-On Delay Time t d(on) ns Turn-Off Delay Time Turn-On Rise Time t d(off) Tr V DS =1V, V GS =.5V, R G =6Ω, I D =1A ns ns Turn-On Fall Time Tf - 5 ns Total Gate Charge Qg(1) 5. 1 nc Gate-Source Charge Qgs V DS =1V, V GS =.5V,.65 nc Gate-Drain Charge Qgd 1.5 nc Drain-Source Diode Forward Voltage V SD V GS =V,I S =1.A V Maximum Continuous rain-source Diode Forward Current I S 1.6 A Rev

2 PNMTV3 Absolute maximum Parameter Symbol Value Units Drain-Source Voltage V DS V Gate-Source Voltage V GS ±8 V Drain Current Continuous I D 3 A Pulsed I D 9 A Total Power Dissipation P D 1.5 W Operating Junction Temperature Range T J -55 to 15 Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 1s θ JA - 1 /W Typical Characteristics V GS =.5V~5V 8 ID Drain Current (A) 6.5V V 1.5V ID Drain Current (A) 6 T C =15 C 5 C 1 3 V DS Drain-to-Source Voltage (V) 5-55 C V GS Gate-to-Source Voltage (V) Fig 1. Output Characteristics Fig. Transfer Characteristics Rev.6.1

3 PNMTV rds(on) On-Resistance (Ω) V GS =.5V V GS =.5V C Capacitance (pf) C iss C Oss I D Drain Current (A) Fig 3. On-Resistance vs. Drain Current C Rss V DS Drain-to-Source Voltage (V) Fig. Capacitance Characteristics VGS,Gate-to-Source Voltage (V) V GS =.5V RDS(ON),On-Resistance (Normalized) V GS =.5V Qg,Total Gate Charge (nc) Fig 5. Gate Charge Characteristics T J,Junction Temperature ( ) Fig 6. On-Resistance vs. Junction Temperature Rev

4 PNMTV3 1. IS,Source Current(A) 1.1 T C =15 C T C =5 C rds(on),on-resistance(ω) V SD Source-to-Drain Current (V) Fig 7. Source-Drain Diode Forward Voltage V GS Drain-to-Source Voltage (V) Fig 8. On-Resistance vs. Gate-to-Source Voltage.3 1 VGS(TH),Normalized Gate Threshold Voltage(V)..1 I D =5μA T J,Temperature ( ) Fig 9. Normalized Gate Threshold Voltage vs. Temperature Power(W) 8 6 T C =5 Single Pulse Time (sec) Fig 1. Single Pulse Power Rev.6.1

5 PNMTV3 Product dimension(sot-3) A (3) θ C B (1) () D F E H G K J L Dim Millimeters Inches MIN MAX MIN MAX A B C D E F G H J K L θ 1 1 Rev

6 PNMTV3 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi),Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: For additional information, please contact your local Sales Representative. Copyright 9, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev

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