2.5V Drive Pch+Pch MOSFET

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1 2.5V Drive Pch+Pch MOSFET Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TUMT6 Features ) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Drive circuits can be simple. bbreviated symbol : J02 0.2Max. pplications Switching Inner circuit (6) (5) (4) Packaging specifications Type Package Code Basic ordering unit (pieces) Taping TR 3000 bsolute maximum ratings () <It is the same ratings for Tr and Tr2> 2 () (2) ESD PROTECTION DIODE 2 BODY DIODE (3) 2 () Tr Source (2) Tr Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr Drain Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Pw µs, Duty cycle 50% 2 Mounted on a ceramic board Continuous Continuous Symbol S S P IS ISP PD 2 Tch Tstg Limits 20 ±2 ± ± to +50 Unit V V W / TOTL W / ELEMENT C C Thermal resistance Channel to ambient Mounted on a ceramic board Symbol Limits Unit 25 C/W / TOTL Rth(ch-a) 79 C/W / ELEMENT Rev.B /4

2 Electrical characteristics () <It is the same characteristics for Tr and Tr2 MOSFET> Symbol Min. Typ. Max. Unit Conditions Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge IGSS V(BR) DSS SS (th) RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) Qg Qgs Qgd ± µ =±2V, =0V 20 V = m, =0V.0 µ = 20V, =0V V = V, = m mω =, = 4.5V mω =, = 4V mω = 0.5, = 2.5V 0.7 S = V, = pf = V 20 pf =0V 20 pf f=mhz 9 ns = ns 5V = 4.5V 25 ns RL=30Ω ns RG=Ω 2. nc 5V RL=5Ω 0.5 nc = 4.5V RG=Ω 0.5 nc = <Body diode (Source-drain)> Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD.2 V IS= 0.4, =0V Rev.B 2/4

3 Electrical characteristic curves CPCITNCE : C (pf) f=mhz =0V Ciss Crss Coss SWITCHING TIME : t (ns) 0 td (off) td (on) tr = 5V = 4.5 RG=Ω GTE-SOURCE VOLTGE : (V) = 5V = RG=Ω DRIN-SOURCE VOLTGE : (V) TOTL GTE CHRGE : Qg (nc) Fig. Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics Ta=25 C = V GTE-SOURCE VOLTGE : (V) Fig.4 Typical Transfer Characteristics ON-STTE RESISTNCE : RDS (on) (mω) = = GTE-SOURCE VOLTGE : (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage SOURCE CURRENT : IS () 0. =0V SOURCE-DRIN VOLTGE : VSD (V) Fig.6 Source Current vs. Source-Drain Voltage ON-STTE RESISTNCE : RDS (on) (mω) 0 Ta=25 C = 4.5V Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) ON-STTE RESISTNCE : RDS (on) (mω) 0 Ta=25 C = 4V Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) ON-STTE RESISTNCE : RDS (on) (mω) 0 Ta=25 C = 2.5V Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Rev.B 3/4

4 Measurement circuits Pulse Width RL % 50% 90% 50% RG D.U.T. td(on) % % 90% 90% tr td(off) ton toff Fig. Switching Time Measurement Circuit Fig. Switching Waveforms VG Qg IG(Const.) RG D.U.T. RL Qgs Qgd Charge Fig.2 Gate Charge Measurement Circuit Fig.3 Gate Charge Waveform Rev.B 4/4

5 ppendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. pplication circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. ny data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. bout Export Control Order in Japan Products described herein are the objects of controlled goods in nnex (Item 6) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. ppendix-rev.

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