4V Drive Nch+SBD MOSFET
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- Bernice Bradley
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1 4 Drive Nch+SBD MOSFET Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions ( : mm) TUMT5 2. Features ) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) 4 drive. 4) Built-in Low F schottky barrier diode..3 bbreviated symbol : U2.2Max. pplications Switching Packaging specifications Inner circuit Type Package Code Basic ordering unit (pieces) Taping TR 3 (5) 2 (4) () (2) ESD protection diode 2 Body diode (3) ()Gate (2)Source (3)node (4)Cathode (5)Drain bsolute maximum ratings () <MOSFET> Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Continuous DSS GSS ID IDP IS ISP Limits 3 2 ±.4 ± Power dissipation PD 2.7 Channel temperature Tch 5 Pw µs, Duty cycle % 2 Mounted on a ceramic board W / ELEMENT C Rev.B /4
2 <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature 6Hz cycle 2 Mounted on ceramic board Limits RM 3 R 2 IF.5 IFSM 2. PD 2.5 W / ELEMENT Tj 5 C <MOSFET and Di> Total power dissipation Range of storage temperature Mounted on a ceramic board PD Tstg Limits. 55 to +5 W / TOTL C Electrical characteristics () <MOSFET> Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge IGSS (BR) DSS IDSS GS (th) RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min. Typ. Max. µ Conditions GS=2, DS= 3 ID= m, GS= µ DS= 3, GS=. 2.5 DS=, ID= m 7 24 mω ID=.4, GS= mω ID=.4, GS= mω ID=.4, GS= 4. S DS=, ID=.4 7 pf DS= 5 pf GS= 2 pf f=mhz 6 ns DD 5 6 ns ID=.7 GS= 3 ns RL= 2Ω 8 ns RG=Ω.4 2. nc DD 5, GS= 5.6 nc ID=.4.3 nc RL= Ω, RG= Ω <Body diode characteristics (source-drain)> Min. Typ. Max. Conditions Forward voltage SD.2 IS=.6, GS= <Di> Min. Typ. Max. Conditions Forward voltage Reverse current F.36 IF=..47 IF.5 IR µ R= 2 Rev.B 2/4
3 Electrical characteristics curves CPCITNCE : C (pf). f=mhz GS= Ciss Coss Crss. DRIN-SOURCE OLTGE : DS () Fig. Typical Capacitance vs. Drain-Source oltage SWITCHING TIME : t (ns). td(off) td(on) tr tf DD=5 GS= RG=Ω. Fig.2 Switching Characteristics GTE-SOURCE OLTGE : GS () DD=5 ID=.4 RG=Ω 2 3 TOTL GTE CHRGE : Qg (nc) Fig.3 Dynamic Input Characteristics.. DS= GTE-SOURCE OLTGE : GS () Fig.4 Typical Transfer Characteristics STTIC DRIN-SOURCE ON-STTE RESISTNCE : RDS (mω) ID=.7 ID= GTE-SOURCE OLTGE : GS () Fig.5 Static Drain-Source vs. Gate-source oltage SOURCE CURRENT : IS ()... GS=.5..5 SOURCE-DRIN OLTGE : SD () Fig.6 Source Current vs. Source-Drain oltage STTIC DRIN-SOURCE ON-STTE RESISTNCE : RDS (on) (mω) GS=.. Fig.7 Static Drain-Source vs. Drain Current ( Ι ) STTIC DRIN-SOURCE ON-STTE RESISTNCE : RDS (on) (mω).. GS=4.5 Fig.8 Static Drain-Source vs. Drain Current ( ΙΙ ) STTIC DRIN-SOURCE ON-STTE RESISTNCE : RDS (on) (mω).. GS=4 Fig.9 Static Drain-Source vs. Drain Current ( ΙΙΙ ) Rev.B 3/4
4 STTIC DRIN-SOURCE ON-STTE RESISTNCE : RDS (on) (mω). GS=4 GS=4.5 GS= Fig. Static Drain-Source vs. Drain Current ( Ι ) Rev.B 4/4
5 ppendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. pplication circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. ny data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. bout Export Control Order in Japan Products described herein are the objects of controlled goods in nnex (Item 6) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. ppendix-rev.
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