2SK2141 MOS FIELD EFFECT TRANSISTOR DATA SHEET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS FEATURES
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1 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2141 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2141 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES Low On-state Resistance RDS(on) = 1.1 Ω MAX. (VGS = 1 V, ID = 3. A) 1. ±.3 φ3.2 ± ± ±.2 LOW Ciss Ciss = 115 pf TYP. High Avalanche Capability Ratings Isolated TO-22 (MP-45F) Package 15. ± ± ±.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage VDSS 6 V Gate to Source Voltage VGSS ±3 V Drain Current (DC) ID (DC) ±6. A Drain Current (pulse) ID (pulse)* ±24 A Total Power Dissipation (TC = 25 C) PT1 35 W Total Power Dissipation (Ta = 25 C) PT2 2. W Storage Temperature Tstg 55 to +15 C Channel Temperature Tch 15 C Single Avalanche Current IAS** 6. A Single Avalanche Energy EAS** 12 mj *PW 1 µs, Duty Cycle 1% **Starting Tch = 25 C, RG = 25 Ω, VGS = 2 V.7 ± TYP ± MIN. 1.3 ± ± TYP..65 ±.1 1. Gate 2. Drain 3. Source ISOLATED TO-22 (MP-45F) Drain (D) 2.5 ±.1 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate (G) Source (S) Body diode Document No. TC-2514 (O.D. No. TC 873) Date Published January 1995 P Printed in Japan 1995
2 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain to Source On-state Resistance RDS(on) Ω VGS = 1 V, ID = 3. A Gate to Source Cutoff Voltage VGS(off) V VDS = 1 V, ID = 1 ma Forward Transfer Admittance yfs 2. S VDS = 1 V, ID = 3. A Drain Leakage Current IDSS 1 µa VDS = 6V, VGS = Gate to Source Leakage Current IGSS ±1 na VGS = ±3 V, VDS = Input Capacitance Ciss 115 pf VDS = 1 V Output Capacitance Coss 26 pf VGS = Reverse Transfer Capacitance Crss 6 pf f = 1 MHz Turn-On Delay Time td(on) 15 ns VGS = 1 V Rise Time tr 15 ns VDD = 15 V Turn-Off Delay Time td(off) 75 ns ID = 3. A, RG = 1 Ω Fall Time tf 13 ns RL = 37.5 Ω Total Gate Charge QG 4 nc VGS = 1 V Gate to Source Charge QGS 6. nc ID = 6. A Gate to Drain Charge QGD 2 nc VDD = 48 V Diode Forward Voltage VF(S-D) 1. V IF = 6. A, VGS = Reverse Recovery Time trr 37 ns IF = 6. A Reverse Recovery Charge Qrr 1.5 µc di/dt = 5 A/µs Test Circuit 1: Avalanche Capability Test Circuit 2: Switching Time D.U.T. RG = 25 Ω PG. 5 Ω VGS = 2 V L VDD PG. RG D.U.T. RG = 1 Ω RL VDD VGS Wave Form VGS ID 1 % 9 % VGS (on) 9 % 9 % ID IAS BVDSS VDS VGS τ ID Wave Form ID 1 % 1 % td(on) tr td (off) tf VDD Starting Tch τ = 1 µ s Duty Cycle 1% ton toff Test Circuit 3: Gate Charge PG. D.U.T. IG = 2 ma 5 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2
3 TYPICAL CHARACTERISTICS (TA = 25 C) 1 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 8 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dt - Percentage of Rated Power - % PT - Total Power Dissipation - W TC - Case Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA ID (DC) RDS (on) Limited (at VGS = 2 V) ID (pulse) 1 ms 1 ms Power Dissipation Limited 2 ms PW = 1 s µ µ 1 s TC = 25 C Single Pulse DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1 V 12 V 8 V VGS = 6 V VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V 1 DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE Tch = 125 C 75 C 25 C 25 C 1. VDS = 1 V 5 1 VGS - Gate to Source Voltage - V 3
4 rth (t) - Transient Thermal Resistance - C/W1 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH.1 1 µ 1 µ 1 m 1 m 1 m PW - Pulse Width - s Rth (ch-a) = 62.5 C/W Rth (ch-c) = 3.57 C/W TC = 25 C Single Pulse yfs - Forward Transfer Admittance - S 1 1. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Tch = 25 C 25 C 75 C 125 C VDS = 1 V RDS (on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID = 6. A 3. A 1.2 A VGS - Gate to Source Voltage - V RDS (on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 1 V 2 V VGS (off) - Gate to Source Cutoff Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 1. VDS = 1 V ID = 1 ma Tch - Channel Temperature - C 4
5 RDS (on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 3. VGS = 1 V ID = 6 A 3 A Tch - Channel Temperature - C ISD - Diode Forward Current - A VGS = 1 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE.5 VGS = V 1. VSD - Source to Drain Voltage - V 1.5 Ciss, Coss, Crss - Capacitance - pf TC = 25 C Single Pulse 1 1. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Crss Ciss Coss VDS - Drain to Source Voltage - V td (on), tr, td (off), tf - Switching Time - ns SWITCHING CHARACTERISTICS td (on) VDD = 15 V VGS = 1 V RG = 1 Ω tr tf td (off) VDS - Drain to Source Voltage - V DYNAMIC INPUT CHARACTERISTICS VDD = 45 V 3 V 12 V VDS VGS ID = ID (DC) VGS - Gate to Source Voltage - V trr - Reverse Recovery Time - ns REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT di/dt = 5 A/ µ s VGS = 1 V Qg - Gate Charge - nc Diode Forward Current - A 5
6 IAS - Single Avalanche Current - A 5 1 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD IAS = 6. A RG = 25 Ω 1. VDD = 15 V VGS = 2 V Starting Tch.5 1 µ 1 µ EAS = 12 mj 1 m 1 m EAS - Single Avalanche Energy - mj SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE ID (peak = ID (DC) VDD = 15 V L - Inductance - H Starting Tch-Starting Channel Temperature - C 6
7 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-122 IEI-129 IEI-127 IEI-1213 MEI-122 MF-1134 TEA-134 TEA-135 TEA-137 7
8 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard:Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M
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FMH9N9E Super FAP-E 3 series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller
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Ordering number : ENA1C BBS P-Channel Power MOSFET 6V, 1A,.8mΩ, TO-6-L/TO-6 http://onsemi.com Features ON-resistance RDS(on)1=4.4mΩ (typ.) Input capacitance Ciss=1pF (typ.) 4V drive TO-6 Specifications
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N-channel 800 V, 1.50 Ω typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID STP5N80K5 800 V 1.75 Ω 4 A Industry s lowest RDS(on) x area
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