AOT418L/AOB418L 100V N-Channel MOSFET SDMOS TM
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- Edmund Joseph
- 5 years ago
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1 V NChannel MOFET MO TM eneral escription The AOT48L/AOB48L is fabricated with MO TM trench technology that combines excellent R (ON) with low gate charge and low Q rr.the result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product ummary V I (at V =V) R (ON) (at V =V) R (ON) (at V = 7V) V A < mω < mω % UI Tested % R g Tested Top View TO Bottom View Top View TO63 PAK Bottom View Absolute Maximum Ratings T A = C unless otherwise noted Parameter rainource Voltage ateource Voltage ymbol V V Maximum ± Units V V Continuous rain T C = C Current I T C = C 8 A Pulsed rain Current C I M 8 Continuous rain T A = C 9. I M Current T A =7 C 7. A Avalanche Current C Avalanche energy L=.mH C I A, I AR E A, E AR 6 8 A mj T C = C 333 Power issipation B P T C = C 67 W T A = C. Power issipation A P M T A =7 C.3 W Junction and torage Temperature Range T J, T T to 7 C Thermal Characteristics Parameter ymbol Typ Max Maximum JunctiontoAmbient A t s R θja Maximum JunctiontoAmbient A teadytate 47 6 Maximum JunctiontoCase teadytate.36.4 R θjc Units C/W C/W C/W Rev: May Page of 7
2 Electrical Characteristics (T J = C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rainource Breakdown Voltage I =µa, V =V V I Zero ate Voltage rain Current V =V, V =V T J = C µa I atebody leakage current V =V, V = ±V na V (th) ate Threshold Voltage V =V I =µa V I (ON) On state drain current V =V, V =V 8 A V =V, I =A 8. TO T J = C 8 mω R (ON) tatic rainource OnResistance V =7V, I =A TO V =V, I =A TO63 9. mω mω V =7V, I =A TO mω g F Forward Transconductance V =V, I =A V iode Forward Voltage I =A,V =V.67 V I Maximum Bodyiode Continuous Current A YNAMIC PARAMETER C iss Input Capacitance pf C oss Output Capacitance V =V, V =V, f=mhz 6 38 pf C rss Reverse Transfer Capacitance pf R g ate resistance V =V, V =V, f=mhz..4.7 Ω WITCHIN PARAMETER Q g (V) Total ate Charge nc Q gs ate ource Charge V =V, V =V, I =A 6 4 nc Q gd ate rain Charge 3 3 nc t (on) TurnOn elaytime ns t r TurnOn Rise Time V =V, V =V, R L =.Ω, ns t (off) TurnOff elaytime R EN =3Ω 38 ns t f TurnOff Fall Time ns t rr Body iode Reverse Recovery Time I F =A, di/dt=a/µs ns Q rr Body iode Reverse Recovery Charge I F =A, di/dt=a/µs nc A. The value of R θja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A = C. The Power dissipation P M is based on R θja and the maximum allowed junction temperature of C. The value in any given application depends on the user's specific board design, and the maximum temperature of 7 C may be used if the PCB allows it. B. The power dissipation P is based on T J(MAX) =7 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =7 C. Ratings are based on low frequency and duty cycles to keep initial T J = C.. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3µs pulses, duty cycle.% max. F. These curves are based on the junctiontocase thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =7 C. The OA curve provides a single pulse rating.. The maximum current rating is package limited. H. These tests are performed with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A = C. THI PROUCT HA BEEN EINE AN QUALIFIE FOR THE CONUMER MARKET. APPLICATION OR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM ARE NOT AUTHORIZE. AO OE NOT AUME ANY LIABILITY ARIIN OUT OF UCH APPLICATION OR UE OF IT PROUCT. AO REERVE THE RIHT TO IMPROVE PROUCT EIN, FUNCTION AN RELIABILITY WITHOUT NOTICE. Rev: May Page of 7
3 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 8 V 6V 8 V =V 6 7V.V 6 I (A) 4 I (A) V V =4.V V (Volts) Fig : OnRegion Characteristics (Note E) C C V (Volts) Figure : Transfer Characteristics (Note E).4 R (ON) (mω) 8 6 V =7V V =V Normalized OnResistance V =V I =A V =7V I =A I (A) Figure 3: OnResistance vs. rain Current and ate Voltage (Note E) Temperature ( C) Figure 4: OnResistance vs. Junction 8 Temperature (Note E).E R (ON) (mω) C C I =A I (A).E 4.E.E.E.E3.E4 C C V (Volts) Figure : OnResistance vs. ateource Voltage (Note E).E V (Volts) Figure 6: Bodyiode Characteristics (Note E) Rev: May Page 3 of 7
4 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 7 V (Volts) V =V I =A Capacitance (pf) C oss C iss Crss Q g (nc) Figure 7: atecharge Characteristics V (Volts) Figure 8: Capacitance Characteristics. I (Amps).... R (ON) limited T J(Max) =7 C T C = C C µs µs µs ms ms Power (W) 4 3 T J(Max) =7 C T C = C 7... V (Volts) Figure 9: Maximum Forward Biased afe Operating Area (Note F) E.... Pulse Width (s) Figure : ingle Pulse Power Rating Junctionto 8 Case (Note F) Z θjc Normalized Transient Thermal Resistance.. =T on /T T J,PK =T C P M.Z θjc.r θjc R θjc =.4 C/W ingle Pulse In descending order =.,.3,.,.,.,., single pulse 4 T Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P T on Rev: May Page 4 of 7
5 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 3 I AR (A) Peak Avalanche Current T A = C T A = C T A = C T A = C Power issipation (W) 3 Time in avalanche, t A (µs) Figure : ingle Pulse Avalanche capability (Note C) 7 7 T CAE ( C) Figure 3: Power erating (Note F) T A = C Current rating I (A) Power (W) T CAE ( C) Figure 4: Current erating (Note F). Pulse Width (s) 8 Figure : ingle Pulse Power Rating Junctionto Ambient (Note H) Z θja Normalized Transient Thermal Resistance.. =T on /T T J,PK =T A P M.Z θja.r θja R θja =6 C/W In descending order =.,.3,.,.,.,., single pulse 4 ingle Pulse T... Pulse Width (s) Figure 6: Normalized Maximum Transient Thermal Impedance (Note H) P T on Rev: May Page of 7
6 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 4 di/dt=8a/µs ºC di/dt=8a/µs ºC 3. Q rr (nc) Q rr I rm ºC ºC ºC 3 I (A) Figure 7: iode Reverse Recovery Charge and Peak Current vs. Conduction Current 3 I rm (A) t rr (ns) t rr ºC ºC ºC 3 I (A) Figure 8: iode Reverse Recovery Time and oftness Factor vs. Conduction Current.. Q rr (nc) I s =A Q rr I rm º º ºC ºC di/dt (A/µs) Figure 9: iode Reverse Recovery Charge and Peak Current vs. di/dt I rm (A) t rr (ns) ºC ºC ºC I s =A. ºC di/dt (A/µs) Figure : iode Reverse Recovery Time and oftness Factor vs. di/dt t rr.. Rev: May Page 6 of 7
7 ate Charge Test Circuit & Waveform Qg VC UT VC V Qgs Qgd Ig RL Resistive witching Test Circuit & Waveforms Charge Rg UT VC 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive witching (UI) Test Circuit & Waveforms L E = / LI AR AR BV Rg Id VC Id I AR UT iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L VC Isd I F di/dt I RM t rr Rev: May Page 7 of 7
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