AO4407 P-Channel Enhancement Mode Field Effect Transistor

Transcription

1 June 22 AO447 P-Channel Enhancement Mode Field Effect Transistor General escription The AO447 uses advanced trench technology to provide excellent R (ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features V (V) = -3V I = -12 A R (ON) < 13mΩ (V G = -2V) R (ON) < 14mΩ (V G = -V) OIC-8 Top View G G Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter ymbol Maximum rain-ource Voltage -3 Gate-ource Voltage Continuous rain T A =25 C Current A T A =7 C Pulsed rain Current B Power issipation A T A =25 C T A =7 C Junction and torage Temperature Range V V G I M T J, T TG ±25-12 I - -6 P to 15 Units V V A W C Thermal Characteristics Parameter ymbol Typ Max Units Maximum Junction-to-Ambient A t s 28 4 C/W R θja Maximum Junction-to-Ambient A teady-tate C/W Maximum Junction-to-Lead C teady-tate R θjl 21 3 C/W Alpha & Omega emiconductor, Ltd.

2 AO447 Electrical Characteristics (T J =25 C unless otherwise noted) ymbol Parameter Conditions Min Typ Max Units TATIC PARAMETER BV rain-ource Breakdown Voltage I =-25µA, V G =V -3 V I Zero Gate Voltage rain Current V =-24V, V G =V -1 T J =55 C -5 µa I G Gate-Body leakage current V =V, V G =±25V ± na V G(th) Gate Threshold Voltage V =V G I =-25µA V I (ON) On state drain current V G =-V, V =-5V 6 A V G =-V, I =-A mω T J =125 C R (ON) tatic rain-ource On-Resistance V G =-2V, I =-A 13 mω V G =-4.5V, I =-A 24 mω g F Forward Transconductance V =-5V, I =-A 26 V iode Forward Voltage I =-1A,V G =V V I Maximum Body-iode Continuous Current -4.2 A YNAMIC PARAMETER C iss Input Capacitance 276 pf C oss Output Capacitance V G =V, V =-15V, f=1mhz 53 pf C rss Reverse Transfer Capacitance 32 pf R g Gate resistance V G =V, V =V, f=1mhz 2 Ω WITCHING PARAMETER Q g Total Gate Charge 37.2 nc Q gs Gate ource Charge V G =-V, V =-15V, I =-12A 7 nc Q gd Gate rain Charge.4 nc t (on) Turn-On elaytime 12.4 ns t r Turn-On Rise Time V G =-V, V =-15V, R L =1.25Ω, 8.2 ns t (off) Turn-Off elaytime R GEN =3Ω 25.6 ns t f Turn-Off Fall Time 12 ns t rr Body iode Reverse Recovery Time I F =-12A, di/dt=a/µs 33 ns Q rr Body iode Reverse Recovery Charge I F =-12A, di/dt=a/µs 23 nc A: The value of R θja is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient.. The static characteristics in Figures 1 to 6,12,14 are obtained using 8 µs pulses, duty cycle.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The OA curve provides a single pulse rating. Alpha & Omega emiconductor, Ltd.

3 AO447 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 5 4 -V -8V -6V -5.5V 25 2 V =-5V -I (A) 3 2-5V -4.5V -I (A) C V G =-4V 5 25 C V (Volts) Fig 1: On-Region Characteristics V G (Volts) Figure 2: Transfer Characteristics R (ON) (mω) V G =-6V V G =-V Normalized On-Resistance I =-A V G =-V V G =-4.5V I (A) Figure 3: On-Resistance vs. rain Current and Gate Voltage Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 6 1.E+1 5 I =-A 1.E+ R (ON) (mω) C 125 C -I (A) 1.E-1 1.E-2 1.E-3 1.E-4 1.E C 25 C V G (Volts) Figure 5: On-Resistance vs. Gate-ource Voltage 1.E V (Volts) Figure 6: Body-iode Characteristics Alpha and Omega emiconductor, Ltd.

4 AO447 TYPICAL ELECTRICAL AN THERMAL CHARACTERITIC 8 V =-15V I =-12A 3 25 C iss -V G (Volts) Capacitance (pf) C oss C rss Q g (nc) Figure 7: Gate-Charge Characteristics V (Volts) Figure 8: Capacitance Characteristics -I (Amps).. 1. T J(Max) =15 C T A =25 C R (ON) limited 1s s µs 1ms ms.1s µs Power (W) T J(Max) =15 C T A =25 C.1 C.1 1 -V (Volts) Figure 9: Maximum Forward Biased afe Operating Area (Note E) Pulse Width (s) Figure : ingle Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance 1.1 =T on /(T on +T off ) T J,PK =T A +P M.Z θja.r θja R θja =4 C/W In descending order =.5,.3,.1,.5,.2,.1, single pulse ingle Pulse Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance P T on T off Alpha & Omega emiconductor, Ltd.

5 ALPHA & OMEGA EMICONUCTOR, INC. O-8 Package ata YMBOL A A1 A2 b c E1 e E h L aaa θ IMENION IN MILLIMETER MAX IMENION IN INCHE MIN NOM MIN NOM MAX BC.5 BC θ NOTE: 1. LEA FINIH: 15 MICROINCHE ( 3.8 um) MIN. THICKNE OF Tin/Lead (OLER) PLATE ON LEA 2. TOLERANCE ±. mm (4 mil) UNLE OTHERWIE PECIFIE 3. COPLANARITY :. mm 4. IMENION L I MEAURE IN GAGE PLANE PACKAGE MARKING ECRIPTION RECOMMENE LAN PATTERN NOTE: LG - AO LOGO PARTN - PART NUMBER COE. F - FAB LOCATION A - AEMBLY LOCATION Y - YEAR COE W - WEEK COE. L N - AEMBLY LOT COE O-8 PART NO. COE PART NO. AO44 AO441 COE PART NO. COE 44 AO AO PART NO. AO47 AO471 COE UNIT: mm

6 ALPHA & OMEGA EMICONUCTOR, INC. O-8 Tape and Reel ata O-8 Carrier Tape O-8 Reel O-8 Tape Leader / Trailer & Orientation